TWI241649B - Multiple frequency plasma chamber with grounding capacitor at cathode - Google Patents

Multiple frequency plasma chamber with grounding capacitor at cathode Download PDF

Info

Publication number
TWI241649B
TWI241649B TW090110556A TW90110556A TWI241649B TW I241649 B TWI241649 B TW I241649B TW 090110556 A TW090110556 A TW 090110556A TW 90110556 A TW90110556 A TW 90110556A TW I241649 B TWI241649 B TW I241649B
Authority
TW
Taiwan
Prior art keywords
electrode
frequency
capacitor
plasma
scope
Prior art date
Application number
TW090110556A
Other languages
English (en)
Chinese (zh)
Inventor
Sheng Sun
Jeff C Olsen
Sanjay Yadav
Quanyuan Shang
Kam S Law
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TWI241649B publication Critical patent/TWI241649B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW090110556A 2000-05-03 2001-05-02 Multiple frequency plasma chamber with grounding capacitor at cathode TWI241649B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/563,963 US6857387B1 (en) 2000-05-03 2000-05-03 Multiple frequency plasma chamber with grounding capacitor at cathode

Publications (1)

Publication Number Publication Date
TWI241649B true TWI241649B (en) 2005-10-11

Family

ID=24252614

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090110556A TWI241649B (en) 2000-05-03 2001-05-02 Multiple frequency plasma chamber with grounding capacitor at cathode

Country Status (5)

Country Link
US (1) US6857387B1 (https=)
JP (2) JP4817528B2 (https=)
KR (5) KR20010102930A (https=)
SG (1) SG91920A1 (https=)
TW (1) TWI241649B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480913B (zh) * 2008-02-08 2015-04-11 蘭姆研究公司 電漿處理室零件之防護塗布層及其使用方法
TWI488547B (zh) * 2007-12-25 2015-06-11 應用材料股份有限公司 電漿室裝置
TWI587749B (zh) * 2012-03-19 2017-06-11 蘭姆研究公司 用以校正電漿處理系統中之非均勻性的方法及設備
CN107452671A (zh) * 2016-05-05 2017-12-08 朗姆研究公司 使用电感耦合高密度等离子体进行介电膜的致密化

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
KR100490049B1 (ko) * 2003-04-14 2005-05-17 삼성전자주식회사 일체형 디퓨저 프레임을 가지는 ｃｖｄ 장치
KR100965758B1 (ko) * 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US7107125B2 (en) * 2003-10-29 2006-09-12 Applied Materials, Inc. Method and apparatus for monitoring the position of a semiconductor processing robot
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
CH706979B1 (en) * 2004-04-30 2014-03-31 Tel Solar Ag Method for producing a disc-shaped workpiece based on a dielectric substrate and vacuum treatment plant therefor.
KR100710923B1 (ko) * 2004-06-02 2007-04-23 동경 엘렉트론 주식회사 플라즈마 처리장치 및 임피던스 조정방법
KR100646104B1 (ko) * 2004-07-02 2006-11-15 주식회사 에이디피엔지니어링 접지장치
KR100596329B1 (ko) * 2004-07-02 2006-07-06 주식회사 에이디피엔지니어링 플라즈마 처리장치의 접지수단
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
KR100714882B1 (ko) 2006-02-01 2007-05-04 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
KR101197020B1 (ko) * 2006-06-09 2012-11-06 주성엔지니어링(주) 균일한 플라즈마 방전을 위한 기판처리장치 및 이를이용하여 플라즈마 방전세기를 조절하는 방법
KR101346081B1 (ko) * 2006-06-20 2013-12-31 참엔지니어링(주) 플라스마 에칭 챔버
US7416677B2 (en) * 2006-08-11 2008-08-26 Tokyo Electron Limited Exhaust assembly for plasma processing system and method
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
TW200823571A (en) * 2006-11-30 2008-06-01 Univ Nat Chiao Tung Plasma device for liquid crystal alignment
US20080142481A1 (en) * 2006-12-18 2008-06-19 White John M In-situ particle collector
KR100889703B1 (ko) * 2007-04-10 2009-03-24 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
JP4887202B2 (ja) * 2007-04-17 2012-02-29 東京エレクトロン株式会社 プラズマ処理装置及び高周波電流の短絡回路
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
KR20080105617A (ko) * 2007-05-31 2008-12-04 삼성모바일디스플레이주식회사 화학기상증착장치 및 플라즈마강화 화학기상증착장치
JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
US8269510B2 (en) * 2007-10-05 2012-09-18 Lam Research Corporation Apparatus for measuring dielectric properties of parts
US20090107955A1 (en) * 2007-10-26 2009-04-30 Tiner Robin L Offset liner for chamber evacuation
JP5069581B2 (ja) * 2008-02-01 2012-11-07 富士フイルム株式会社 ガスバリア膜の成膜方法、ガスバリアフィルムおよび有機ｅｌ素子
KR101490428B1 (ko) * 2008-02-15 2015-02-11 엘아이지에이디피 주식회사 플라즈마 처리장비용 접지장치
CN102017056B (zh) * 2008-05-02 2013-11-20 东电电子太阳能股份公司 用于衬底的等离子体处理的等离子体处理设备和方法
JP2011525719A (ja) * 2008-06-24 2011-09-22 アプライド マテリアルズ インコーポレイテッド 低温ｐｅｃｖｄ用途用のペデスタルヒータ
JP5157741B2 (ja) * 2008-08-12 2013-03-06 コニカミノルタホールディングス株式会社 プラズマ放電処理装置
JP5156552B2 (ja) * 2008-09-08 2013-03-06 富士フイルム株式会社 ガスバリアフィルムの製造方法
JP5683469B2 (ja) * 2008-10-09 2015-03-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 大型プラズマ処理チャンバのｒｆ復路
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
CN102308675B (zh) * 2009-02-04 2016-01-13 应用材料公司 用于等离子体工艺的接地回流路径
WO2010094002A2 (en) * 2009-02-13 2010-08-19 Applied Materials, Inc. Rf bus and rf return bus for plasma chamber electrode
US9039864B2 (en) * 2009-09-29 2015-05-26 Applied Materials, Inc. Off-center ground return for RF-powered showerhead
TWI432100B (zh) * 2009-11-25 2014-03-21 Ind Tech Res Inst 電漿產生裝置
JP5375763B2 (ja) * 2010-07-27 2013-12-25 三菱電機株式会社 プラズマ装置およびこれを用いた半導体薄膜の製造方法
JP5922352B2 (ja) * 2011-08-11 2016-05-24 Ｓｐｐテクノロジーズ株式会社 窒化膜の製造装置及びその製造方法、並びにその製造プログラム
KR101886740B1 (ko) * 2011-11-01 2018-09-11 삼성디스플레이 주식회사 기상 증착 장치 및 유기 발광 표시 장치 제조 방법
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
KR101493254B1 (ko) * 2012-07-09 2015-02-16 엘아이지에이디피 주식회사 원자층 박막 증착장비
KR101493250B1 (ko) * 2012-07-09 2015-02-16 엘아이지에이디피 주식회사 원자층 박막 증착장비
KR20150022163A (ko) * 2013-08-22 2015-03-04 삼성디스플레이 주식회사 플라즈마 처리 장치용 스트랩 및 이를 포함하는 플라즈마 처리 장치
CN104746047A (zh) * 2013-12-31 2015-07-01 丽佳达普株式会社 原子层沉积装置
CN104746048A (zh) * 2013-12-31 2015-07-01 丽佳达普株式会社 原子层沉积装置
KR200482926Y1 (ko) 2015-10-02 2017-03-16 (주)씨에스텍 뒤틀림 현상을 감소시킨 유기금속 화학증착프로세싱 챔버용 오메가형 히터
CN109196619B (zh) * 2016-06-03 2021-10-26 瑞士艾发科技 等离子体蚀刻室和等离子体蚀刻的方法
KR20190091926A (ko) 2018-01-30 2019-08-07 에이피시스템 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
CN114008755B (zh) * 2019-04-29 2024-12-20 应用材料公司 接地带组件
US11450546B2 (en) * 2020-04-09 2022-09-20 Applied Materials, Inc. Semiconductor substrate support with internal channels
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
US11499223B2 (en) * 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber
JP7705812B2 (ja) * 2021-07-07 2025-07-10 東京エレクトロン株式会社 プラズマ処理装置
KR102804139B1 (ko) * 2021-07-07 2025-05-09 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US5210466A (en) * 1989-10-03 1993-05-11 Applied Materials, Inc. VHF/UHF reactor system
US5170098A (en) * 1989-10-18 1992-12-08 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus for use in carrying out the same
JP2774367B2 (ja) * 1990-08-07 1998-07-09 忠弘 大見 プラズマプロセス用装置および方法
US5288971A (en) * 1991-08-09 1994-02-22 Advanced Energy Industries, Inc. System for igniting a plasma for thin film processing
US5688330A (en) * 1992-05-13 1997-11-18 Ohmi; Tadahiro Process apparatus
JP3157638B2 (ja) 1993-03-02 2001-04-16 アネルバ株式会社 プラズマ処理装置
US5487785A (en) * 1993-03-26 1996-01-30 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
JP3090562B2 (ja) * 1993-05-24 2000-09-25 東京エレクトロン株式会社 プラズマ処理装置
JPH078638A (ja) * 1993-06-21 1995-01-13 Toyomasa Okuyama 鉄道模型の制御装置
JP3173691B2 (ja) 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置
US5815047A (en) * 1993-10-29 1998-09-29 Applied Materials, Inc. Fast transition RF impedance matching network for plasma reactor ignition
JP3062393B2 (ja) * 1994-04-28 2000-07-10 東京エレクトロン株式会社 プラズマ処理装置
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP2956494B2 (ja) 1994-10-26 1999-10-04 住友金属工業株式会社 プラズマ処理装置
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JPH09106899A (ja) * 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
JP3950494B2 (ja) * 1996-05-31 2007-08-01 キヤノンアネルバ株式会社 窒化チタン薄膜の作製方法
JPH1079350A (ja) * 1996-09-04 1998-03-24 Kokusai Electric Co Ltd プラズマ処理装置
GB9620151D0 (en) * 1996-09-27 1996-11-13 Surface Tech Sys Ltd Plasma processing apparatus
TW403959B (en) 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
JPH10172792A (ja) * 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3710081B2 (ja) * 1997-11-30 2005-10-26 アルプス電気株式会社 プラズマ処理装置
US6041734A (en) 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
JP3565311B2 (ja) * 1997-12-17 2004-09-15 アルプス電気株式会社 プラズマ処理装置
US6112697A (en) 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
KR100292411B1 (ko) * 1998-09-25 2001-06-01 윤종용 반도체소자의 제조에 사용되는 플라즈마 장비

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488547B (zh) * 2007-12-25 2015-06-11 應用材料股份有限公司 電漿室裝置
TWI480913B (zh) * 2008-02-08 2015-04-11 蘭姆研究公司 電漿處理室零件之防護塗布層及其使用方法
TWI587749B (zh) * 2012-03-19 2017-06-11 蘭姆研究公司 用以校正電漿處理系統中之非均勻性的方法及設備
CN107452671A (zh) * 2016-05-05 2017-12-08 朗姆研究公司 使用电感耦合高密度等离子体进行介电膜的致密化

Also Published As

Publication number Publication date
SG91920A1 (en) 2002-10-15
KR100971840B1 (ko) 2010-07-22
JP2011253821A (ja) 2011-12-15
KR20060123696A (ko) 2006-12-04
KR20070118998A (ko) 2007-12-18
KR20090080494A (ko) 2009-07-24
JP2002151496A (ja) 2002-05-24
US6857387B1 (en) 2005-02-22
KR20100039833A (ko) 2010-04-16
JP5600644B2 (ja) 2014-10-01
KR101012407B1 (ko) 2011-02-09
JP4817528B2 (ja) 2011-11-16
KR20010102930A (ko) 2001-11-17

Similar Documents

Publication Publication Date Title
TWI241649B (en) Multiple frequency plasma chamber with grounding capacitor at cathode
TW554437B (en) Adjustable dual frequency voltage dividing plasma reactor
US7510667B2 (en) Plasma processing method and apparatus
US5571366A (en) Plasma processing apparatus
US6387208B2 (en) Inductive coupling plasma processing apparatus
TW302508B (https=)
JP4371576B2 (ja) 膜を堆積するための装置
TW421814B (en) High frequency discharging method, its apparatus, and high frequency processing apparatus
US8261691B2 (en) Plasma processing apparatus
US20090032190A1 (en) Plasma processing apparatus of batch type
US20070224364A1 (en) Plasma processing apparatus, plasma processing method, plasma film deposition apparatus, and plasma film deposition method
US20020139480A1 (en) Methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system
JPH10189293A (ja) プラズマ処理装置
WO2003030241A1 (en) Plasma processing apparatus
TW202107950A (zh) 電漿處理方法及電漿處理裝置
JP3086362B2 (ja) プラズマ処理装置
JP3396399B2 (ja) 電子デバイス製造装置
EP1269512A2 (en) Apparatus and methods for actively controlling rf peak-to-peak voltage in an inductively coupled plasma etching system
TW202201468A (zh) 等離子體處理裝置及其約束環元件、接地環與工作方法
JP4098975B2 (ja) プラズマ支援ウェハー処理装置の二重電極ウェハーホルダ
CN215008137U (zh) 一种等离子体处理装置
JP3485013B2 (ja) プラズマ処理方法及び装置
JP2001023972A (ja) プラズマ処理装置
TW200845829A (en) Plasma generating apparatus
CN115565840A (zh) 一种等离子体处理装置及处理方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees