TW302508B - - Google Patents

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Publication number
TW302508B
TW302508B TW084112784A TW84112784A TW302508B TW 302508 B TW302508 B TW 302508B TW 084112784 A TW084112784 A TW 084112784A TW 84112784 A TW84112784 A TW 84112784A TW 302508 B TW302508 B TW 302508B
Authority
TW
Taiwan
Prior art keywords
plasma
electrode
etching
power
frequency
Prior art date
Application number
TW084112784A
Other languages
English (en)
Chinese (zh)
Original Assignee
Tokyo Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33023994A external-priority patent/JP3150044B2/ja
Priority claimed from JP06330240A external-priority patent/JP3113786B2/ja
Priority claimed from JP33128394A external-priority patent/JPH08162444A/ja
Application filed by Tokyo Electron Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW302508B publication Critical patent/TW302508B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW084112784A 1994-12-05 1995-11-30 TW302508B (https=)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33023994A JP3150044B2 (ja) 1994-12-05 1994-12-05 プラズマ処理装置及びその制御方法
JP06330240A JP3113786B2 (ja) 1994-12-05 1994-12-05 プラズマ処理装置及びその制御方法
JP33128394A JPH08162444A (ja) 1994-12-08 1994-12-08 プラズマ処理装置及びその制御方法

Publications (1)

Publication Number Publication Date
TW302508B true TW302508B (https=) 1997-04-11

Family

ID=27340401

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112784A TW302508B (https=) 1994-12-05 1995-11-30

Country Status (3)

Country Link
US (1) US5716534A (https=)
KR (1) KR100193373B1 (https=)
TW (1) TW302508B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422288B (zh) * 2009-09-11 2014-01-01 Univ Nat Formosa High dissociation rate plasma generation method and application device thereof

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JP4578651B2 (ja) 1999-09-13 2010-11-10 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置、プラズマエッチング方法
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JP4717295B2 (ja) * 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
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JP3665265B2 (ja) * 2000-12-28 2005-06-29 株式会社日立製作所 プラズマ処理装置
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US20020139477A1 (en) 2001-03-30 2002-10-03 Lam Research Corporation Plasma processing method and apparatus with control of plasma excitation power
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US6761796B2 (en) * 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
JP2003045874A (ja) * 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
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US8562750B2 (en) * 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge
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JP6556046B2 (ja) * 2015-12-17 2019-08-07 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP6643950B2 (ja) * 2016-05-23 2020-02-12 東京エレクトロン株式会社 プラズマ処理方法
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
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JP2023536154A (ja) * 2020-07-31 2023-08-23 ラム リサーチ コーポレーション 低傾斜トレンチエッチングのための薄いシャドウリング
CN111968905B (zh) * 2020-08-03 2023-11-14 北京北方华创微电子装备有限公司 半导体设备的射频起辉控制方法及装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422288B (zh) * 2009-09-11 2014-01-01 Univ Nat Formosa High dissociation rate plasma generation method and application device thereof

Also Published As

Publication number Publication date
KR100193373B1 (ko) 1999-06-15
US5716534A (en) 1998-02-10
KR960026333A (ko) 1996-07-22

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MM4A Annulment or lapse of patent due to non-payment of fees