KR100193373B1 - 플라스마 처리방법 및 플라스마 에칭방법 - Google Patents

플라스마 처리방법 및 플라스마 에칭방법 Download PDF

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Publication number
KR100193373B1
KR100193373B1 KR1019950046881A KR19950046881A KR100193373B1 KR 100193373 B1 KR100193373 B1 KR 100193373B1 KR 1019950046881 A KR1019950046881 A KR 1019950046881A KR 19950046881 A KR19950046881 A KR 19950046881A KR 100193373 B1 KR100193373 B1 KR 100193373B1
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KR
South Korea
Prior art keywords
etching
plasma
high frequency
ratio
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019950046881A
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English (en)
Korean (ko)
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KR960026333A (ko
Inventor
히로시 쓰치야
요시오 후카사와
슈지 모치즈키
유키오 나이도
고스케 이마후카
Original Assignee
히가시 데쓰로
동경 엘렉트론주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33023994A external-priority patent/JP3150044B2/ja
Priority claimed from JP06330240A external-priority patent/JP3113786B2/ja
Priority claimed from JP33128394A external-priority patent/JPH08162444A/ja
Application filed by 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 히가시 데쓰로
Publication of KR960026333A publication Critical patent/KR960026333A/ko
Application granted granted Critical
Publication of KR100193373B1 publication Critical patent/KR100193373B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1019950046881A 1994-12-05 1995-12-05 플라스마 처리방법 및 플라스마 에칭방법 Expired - Lifetime KR100193373B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP33023994A JP3150044B2 (ja) 1994-12-05 1994-12-05 プラズマ処理装置及びその制御方法
JP94-330240 1994-12-05
JP06330240A JP3113786B2 (ja) 1994-12-05 1994-12-05 プラズマ処理装置及びその制御方法
JP94-330239 1994-12-06
JP94-331283 1994-12-08
JP33128394A JPH08162444A (ja) 1994-12-08 1994-12-08 プラズマ処理装置及びその制御方法

Publications (2)

Publication Number Publication Date
KR960026333A KR960026333A (ko) 1996-07-22
KR100193373B1 true KR100193373B1 (ko) 1999-06-15

Family

ID=27340401

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950046881A Expired - Lifetime KR100193373B1 (ko) 1994-12-05 1995-12-05 플라스마 처리방법 및 플라스마 에칭방법

Country Status (3)

Country Link
US (1) US5716534A (https=)
KR (1) KR100193373B1 (https=)
TW (1) TW302508B (https=)

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JP4578651B2 (ja) 1999-09-13 2010-11-10 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置、プラズマエッチング方法
TWI224806B (en) * 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
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JP4717295B2 (ja) * 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
JP2002134472A (ja) * 2000-10-20 2002-05-10 Mitsubishi Electric Corp エッチング方法、エッチング装置および半導体装置の製造方法
WO2002052628A1 (en) * 2000-12-26 2002-07-04 Tokyo Electron Limited Plasma processing method and plasma processor
JP2002198355A (ja) * 2000-12-26 2002-07-12 Tokyo Electron Ltd プラズマ処理装置
JP3665265B2 (ja) * 2000-12-28 2005-06-29 株式会社日立製作所 プラズマ処理装置
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
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JP2003045874A (ja) * 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
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US20040040663A1 (en) * 2002-08-29 2004-03-04 Ryujiro Udo Plasma processing apparatus
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
JP4336124B2 (ja) * 2003-03-10 2009-09-30 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
JP4359521B2 (ja) * 2004-02-20 2009-11-04 東京エレクトロン株式会社 プラズマ処理装置及びその制御方法
JP4288229B2 (ja) * 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
US7692916B2 (en) * 2005-03-31 2010-04-06 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method
US7851368B2 (en) * 2005-06-28 2010-12-14 Lam Research Corporation Methods and apparatus for igniting a low pressure plasma
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US20080053817A1 (en) * 2006-09-04 2008-03-06 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
TWI422288B (zh) * 2009-09-11 2014-01-01 Univ Nat Formosa High dissociation rate plasma generation method and application device thereof
US8562750B2 (en) * 2009-12-17 2013-10-22 Lam Research Corporation Method and apparatus for processing bevel edge
US8801950B2 (en) * 2011-03-07 2014-08-12 Novellus Systems, Inc. Reduction of a process volume of a processing chamber using a nested dynamic inert volume
US8895452B2 (en) 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
JP6556046B2 (ja) * 2015-12-17 2019-08-07 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP6643950B2 (ja) * 2016-05-23 2020-02-12 東京エレクトロン株式会社 プラズマ処理方法
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
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JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
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JP2023536154A (ja) * 2020-07-31 2023-08-23 ラム リサーチ コーポレーション 低傾斜トレンチエッチングのための薄いシャドウリング
CN111968905B (zh) * 2020-08-03 2023-11-14 北京北方华创微电子装备有限公司 半导体设备的射频起辉控制方法及装置
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US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
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Publication number Publication date
US5716534A (en) 1998-02-10
KR960026333A (ko) 1996-07-22
TW302508B (https=) 1997-04-11

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