KR20010102930A - 캐쏘드에서 접지형 축전기를 가지는 다중 주파수 플라즈마챔버 - Google Patents

캐쏘드에서 접지형 축전기를 가지는 다중 주파수 플라즈마챔버 Download PDF

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Publication number
KR20010102930A
KR20010102930A KR1020010024071A KR20010024071A KR20010102930A KR 20010102930 A KR20010102930 A KR 20010102930A KR 1020010024071 A KR1020010024071 A KR 1020010024071A KR 20010024071 A KR20010024071 A KR 20010024071A KR 20010102930 A KR20010102930 A KR 20010102930A
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KR
South Korea
Prior art keywords
electrode
plasma
capacitance
capacitors
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020010024071A
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English (en)
Korean (ko)
Inventor
셍 선
제프씨. 올슨
샌제이 야다브
콴유안 생
캄에스. 로
Original Assignee
조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20010102930A publication Critical patent/KR20010102930A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020010024071A 2000-05-03 2001-05-03 캐쏘드에서 접지형 축전기를 가지는 다중 주파수 플라즈마챔버 Ceased KR20010102930A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/563,963 US6857387B1 (en) 2000-05-03 2000-05-03 Multiple frequency plasma chamber with grounding capacitor at cathode
US09/563,963 2000-05-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020060113939A Division KR20060123696A (ko) 2000-05-03 2006-11-17 캐소드에서 접지용 커패시터를 가지는 다중 주파수플라즈마 챔버

Publications (1)

Publication Number Publication Date
KR20010102930A true KR20010102930A (ko) 2001-11-17

Family

ID=24252614

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1020010024071A Ceased KR20010102930A (ko) 2000-05-03 2001-05-03 캐쏘드에서 접지형 축전기를 가지는 다중 주파수 플라즈마챔버
KR1020060113939A Withdrawn KR20060123696A (ko) 2000-05-03 2006-11-17 캐소드에서 접지용 커패시터를 가지는 다중 주파수플라즈마 챔버
KR1020070123727A Ceased KR20070118998A (ko) 2000-05-03 2007-11-30 캐소드에서 접지용 커패시터를 가지는 다중 주파수플라즈마 챔버
KR1020090060654A Expired - Lifetime KR100971840B1 (ko) 2000-05-03 2009-07-03 캐소드에서 접지용 커패시터를 가지는 다중 주파수 플라즈마 챔버
KR1020100018516A Expired - Lifetime KR101012407B1 (ko) 2000-05-03 2010-03-02 캐소드에서 접지용 커패시터를 가지는 다중 주파수 플라즈마 챔버

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020060113939A Withdrawn KR20060123696A (ko) 2000-05-03 2006-11-17 캐소드에서 접지용 커패시터를 가지는 다중 주파수플라즈마 챔버
KR1020070123727A Ceased KR20070118998A (ko) 2000-05-03 2007-11-30 캐소드에서 접지용 커패시터를 가지는 다중 주파수플라즈마 챔버
KR1020090060654A Expired - Lifetime KR100971840B1 (ko) 2000-05-03 2009-07-03 캐소드에서 접지용 커패시터를 가지는 다중 주파수 플라즈마 챔버
KR1020100018516A Expired - Lifetime KR101012407B1 (ko) 2000-05-03 2010-03-02 캐소드에서 접지용 커패시터를 가지는 다중 주파수 플라즈마 챔버

Country Status (5)

Country Link
US (1) US6857387B1 (https=)
JP (2) JP4817528B2 (https=)
KR (5) KR20010102930A (https=)
SG (1) SG91920A1 (https=)
TW (1) TWI241649B (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100596329B1 (ko) * 2004-07-02 2006-07-06 주식회사 에이디피엔지니어링 플라즈마 처리장치의 접지수단
KR100646104B1 (ko) * 2004-07-02 2006-11-15 주식회사 에이디피엔지니어링 접지장치
KR100855597B1 (ko) * 2004-11-04 2008-09-03 어플라이드 머티어리얼스, 인코포레이티드 육불화황 원격 플라즈마 소스 세정
KR100965758B1 (ko) * 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
KR101011407B1 (ko) * 2007-05-03 2011-01-28 어플라이드 머티어리얼스, 인코포레이티드 직사각형 서셉터의 비대칭 접지
KR101490428B1 (ko) * 2008-02-15 2015-02-11 엘아이지에이디피 주식회사 플라즈마 처리장비용 접지장치

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* Cited by examiner, † Cited by third party
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US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
KR100490049B1 (ko) * 2003-04-14 2005-05-17 삼성전자주식회사 일체형 디퓨저 프레임을 가지는 ｃｖｄ 장치
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US7107125B2 (en) * 2003-10-29 2006-09-12 Applied Materials, Inc. Method and apparatus for monitoring the position of a semiconductor processing robot
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
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KR100714882B1 (ko) 2006-02-01 2007-05-04 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
KR101197020B1 (ko) * 2006-06-09 2012-11-06 주성엔지니어링(주) 균일한 플라즈마 방전을 위한 기판처리장치 및 이를이용하여 플라즈마 방전세기를 조절하는 방법
KR101346081B1 (ko) * 2006-06-20 2013-12-31 참엔지니어링(주) 플라스마 에칭 챔버
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JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
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JP5157741B2 (ja) * 2008-08-12 2013-03-06 コニカミノルタホールディングス株式会社 プラズマ放電処理装置
JP5156552B2 (ja) * 2008-09-08 2013-03-06 富士フイルム株式会社 ガスバリアフィルムの製造方法
JP5683469B2 (ja) * 2008-10-09 2015-03-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 大型プラズマ処理チャンバのｒｆ復路
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US6857387B1 (en) 2005-02-22
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