TWI232518B - Substrate processing device - Google Patents

Substrate processing device Download PDF

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Publication number
TWI232518B
TWI232518B TW092127905A TW92127905A TWI232518B TW I232518 B TWI232518 B TW I232518B TW 092127905 A TW092127905 A TW 092127905A TW 92127905 A TW92127905 A TW 92127905A TW I232518 B TWI232518 B TW I232518B
Authority
TW
Taiwan
Prior art keywords
gas
substrate
supplied
reaction chamber
supply
Prior art date
Application number
TW092127905A
Other languages
English (en)
Chinese (zh)
Other versions
TW200423253A (en
Inventor
Masanori Sakai
Toru Kagaya
Nobuhito Shima
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW200423253A publication Critical patent/TW200423253A/zh
Application granted granted Critical
Publication of TWI232518B publication Critical patent/TWI232518B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW092127905A 2002-10-08 2003-10-08 Substrate processing device TWI232518B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002295323A JP4204840B2 (ja) 2002-10-08 2002-10-08 基板処埋装置

Publications (2)

Publication Number Publication Date
TW200423253A TW200423253A (en) 2004-11-01
TWI232518B true TWI232518B (en) 2005-05-11

Family

ID=32089209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092127905A TWI232518B (en) 2002-10-08 2003-10-08 Substrate processing device

Country Status (4)

Country Link
US (2) US20060150905A1 (enExample)
JP (1) JP4204840B2 (enExample)
TW (1) TWI232518B (enExample)
WO (1) WO2004034454A1 (enExample)

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JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
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JP5235293B2 (ja) * 2006-10-02 2013-07-10 東京エレクトロン株式会社 処理ガス供給機構および処理ガス供給方法ならびにガス処理装置
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JP5383332B2 (ja) * 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP2010084156A (ja) * 2008-09-29 2010-04-15 Tokyo Electron Ltd 処理ガス供給系及び成膜装置
JP5233562B2 (ja) * 2008-10-04 2013-07-10 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5325759B2 (ja) * 2009-12-21 2013-10-23 ラムバス・インコーポレーテッド 半導体装置の製造方法
JP5742185B2 (ja) 2010-03-19 2015-07-01 東京エレクトロン株式会社 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体
JP5872141B2 (ja) * 2010-05-20 2016-03-01 東京エレクトロン株式会社 基板処理装置、その制御装置およびその制御方法
JP2010206218A (ja) * 2010-06-07 2010-09-16 Hitachi Kokusai Electric Inc シリコン酸化膜の形成方法
JP5920242B2 (ja) 2012-06-02 2016-05-18 東京エレクトロン株式会社 成膜方法及び成膜装置
JP6222833B2 (ja) * 2013-01-30 2017-11-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
DE102013020662A1 (de) 2013-12-06 2015-06-11 Kienle + Spiess Gmbh Verfahren zur Herstellung von Lamellen für ein Lamellenpaket, insbesondere für elektrische Maschinen und Generatoren,Vorrichtung mit wenigstens einer Stanzpresse sowie nach dem Verfahren hergestellte Lamelle und Lamellenpaket.
JP5859586B2 (ja) * 2013-12-27 2016-02-10 株式会社日立国際電気 基板処理システム、半導体装置の製造方法および記録媒体
WO2015041376A1 (ja) * 2014-09-30 2015-03-26 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および反応管
KR102264257B1 (ko) * 2014-12-30 2021-06-14 삼성전자주식회사 막 형성 방법 및 이를 이용한 반도체 장치 제조 방법
WO2017138087A1 (ja) * 2016-02-09 2017-08-17 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP6773880B2 (ja) 2017-02-23 2020-10-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、コンピュータプログラムおよび処理容器
CN115513101B (zh) * 2022-11-15 2023-01-24 深圳仕上电子科技有限公司 一种等离子蚀刻清洗工艺

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Also Published As

Publication number Publication date
TW200423253A (en) 2004-11-01
US7713582B2 (en) 2010-05-11
JP4204840B2 (ja) 2009-01-07
WO2004034454A1 (ja) 2004-04-22
US20080160214A1 (en) 2008-07-03
JP2004134466A (ja) 2004-04-30
US20060150905A1 (en) 2006-07-13

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