TWD187175S - 圖案化石英晶圓 - Google Patents
圖案化石英晶圓Info
- Publication number
- TWD187175S TWD187175S TW105303687F TW105303687F TWD187175S TW D187175 S TWD187175 S TW D187175S TW 105303687 F TW105303687 F TW 105303687F TW 105303687 F TW105303687 F TW 105303687F TW D187175 S TWD187175 S TW D187175S
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- article
- amount
- view
- symmetrical
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Abstract
【物品用途】;本設計的物品是圖案化石英晶圓,於半導體製造裝置中,載置在用來保持處理對象之半導體基板(晶圓)的基板保持具(晶圓保持具或晶舟)上,進行成膜處理時所使用的適配器。於本物品的表面施以凹凸形狀,以增加在本物品之表面所消耗的處理氣體的量,藉由使其與晶圓所消耗的處理氣體的量接近,以資提高形成在晶圓上的膜的均勻性。;【設計說明】;俯視圖與仰視圖相對稱,俯視圖省略。;左側視圖與右側視圖相對稱,左側視圖省略。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPD2015-29186F JP1563718S (zh) | 2015-12-28 | 2015-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWD187175S true TWD187175S (zh) | 2017-12-11 |
Family
ID=57321959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105303687F TWD187175S (zh) | 2015-12-28 | 2016-06-27 | 圖案化石英晶圓 |
Country Status (3)
Country | Link |
---|---|
US (1) | USD791091S1 (zh) |
JP (1) | JP1563718S (zh) |
TW (1) | TWD187175S (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWD174921S (zh) * | 2014-12-17 | 2016-04-11 | 日本碍子股份有限公司 | 複合基板之部分 |
USD897974S1 (en) * | 2018-03-29 | 2020-10-06 | Hamamatsu Photonics K.K. | Semiconductor wafer |
USD958094S1 (en) | 2019-07-29 | 2022-07-19 | Samsung Display Co., Ltd. | Display panel |
USD940131S1 (en) * | 2019-07-29 | 2022-01-04 | Samsung Display Co., Ltd. | Display panel |
USD966276S1 (en) | 2019-07-29 | 2022-10-11 | Samsung Display Co., Ltd. | Display module for wearable device |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1427772A1 (de) * | 1965-11-23 | 1968-12-12 | Telefunken Patent | Verfahren zum Zerlegen einer Halbleiterscheibe in einzelne Halbleiterplaettchen |
JPS6088535U (ja) * | 1983-11-24 | 1985-06-18 | 住友電気工業株式会社 | 半導体ウエハ |
US5182233A (en) * | 1989-08-02 | 1993-01-26 | Kabushiki Kaisha Toshiba | Compound semiconductor pellet, and method for dicing compound semiconductor wafer |
JPH04276645A (ja) * | 1991-03-04 | 1992-10-01 | Toshiba Corp | 化合物半導体ウエーハのダイシング方法 |
US20020121915A1 (en) * | 2001-03-05 | 2002-09-05 | Agere Systems Guardian Corp. | Automated pattern clustering detection for wafer probe maps |
KR20040094390A (ko) * | 2002-04-11 | 2004-11-09 | 세키스이가가쿠 고교가부시키가이샤 | 반도체 칩의 제조 방법 |
SG111069A1 (en) * | 2002-06-18 | 2005-05-30 | Micron Technology Inc | Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods |
JP2004207606A (ja) * | 2002-12-26 | 2004-07-22 | Disco Abrasive Syst Ltd | ウェーハサポートプレート |
DE102005004827B4 (de) * | 2004-02-03 | 2011-03-31 | Disco Corp. | Wafer-Unterteilungsverfahren |
US8084400B2 (en) * | 2005-10-11 | 2011-12-27 | Intermolecular, Inc. | Methods for discretized processing and process sequence integration of regions of a substrate |
SG126885A1 (en) * | 2005-04-27 | 2006-11-29 | Disco Corp | Semiconductor wafer and processing method for same |
USD552565S1 (en) * | 2005-09-08 | 2007-10-09 | Tokyo Ohka Kogyo Co., Ltd. | Supporting plate |
US7902063B2 (en) * | 2005-10-11 | 2011-03-08 | Intermolecular, Inc. | Methods for discretized formation of masking and capping layers on a substrate |
JP4913517B2 (ja) * | 2006-09-26 | 2012-04-11 | 株式会社ディスコ | ウエーハの研削加工方法 |
US8882917B1 (en) * | 2009-12-31 | 2014-11-11 | Intermolecular, Inc. | Substrate processing including correction for deposition location |
USD614593S1 (en) * | 2008-07-21 | 2010-04-27 | Asm Genitech Korea Ltd | Substrate support for a semiconductor deposition apparatus |
JP2011100922A (ja) * | 2009-11-09 | 2011-05-19 | Toshiba Corp | パターン形成方法、パターン形成システム及び半導体装置の製造方法 |
US8263876B2 (en) * | 2009-12-30 | 2012-09-11 | Harvatek Corporation | Conductive substrate structure with conductive channels formed by using a two-sided cut approach and a method for manufacturing the same |
CA138031S (en) * | 2010-08-17 | 2011-11-17 | Sumitomo Electric Industries | Semiconductor substrate |
JP1441120S (zh) * | 2010-08-17 | 2015-05-11 | ||
CA138030S (en) * | 2010-08-17 | 2011-11-17 | Sumitomo Electric Industries | Semiconductor substrate |
JP2013172082A (ja) * | 2012-02-22 | 2013-09-02 | Toshiba Corp | パターン形成方法、半導体装置の製造方法および塗布装置 |
USD716742S1 (en) * | 2013-09-13 | 2014-11-04 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
USD720313S1 (en) * | 2014-06-16 | 2014-12-30 | Emcore Solar Power, Inc. | Semiconductor wafer with dicing positions for solar cell fabrication |
-
2015
- 2015-12-28 JP JPD2015-29186F patent/JP1563718S/ja active Active
-
2016
- 2016-06-24 US US29/569,263 patent/USD791091S1/en active Active
- 2016-06-27 TW TW105303687F patent/TWD187175S/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP1563718S (zh) | 2016-11-21 |
USD791091S1 (en) | 2017-07-04 |
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