USD897974S1 - Semiconductor wafer - Google Patents

Semiconductor wafer Download PDF

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Publication number
USD897974S1
USD897974S1 US35/355,063 US35506381F USD897974S US D897974 S1 USD897974 S1 US D897974S1 US 35506381 F US35506381 F US 35506381F US D897974 S USD897974 S US D897974S
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US
United States
Prior art keywords
reproduction
view
enlarged
semiconductor wafer
sectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US35/355,063
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Inventor
Tomoya Taguchi
Takeshi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JPD2018-6855F external-priority patent/JP1618612S/ja
Priority claimed from JPD2018-6854F external-priority patent/JP1618342S/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Assigned to HAMAMATSU PHOTONICS K.K. reassignment HAMAMATSU PHOTONICS K.K. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAKAMOTO, TAKESHI, TAGUCHI, TOMOYA
Application granted granted Critical
Publication of USD897974S1 publication Critical patent/USD897974S1/en
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Anticipated expiration legal-status Critical

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Description

1.-2. Semiconductor wafer
1.1 : Front view
1.2 : Rear view
1.3 : Top plan view
1.4 : Bottom view
1.5 : Right side view
1.6 : Left side view
1.7 : Enlarged view showing a portion of Reproduction 1.2 defined by lines 1.7-1.7 and 1.7′-1.7′
1.8 : Enlarged view showing a portion of Reproduction 1.7 defined by lines 1.8-1.8 and 1.8′-1.8′
1.9 : Enlarged view showing a portion of Reproduction 1.7 defined by lines 1.9-1.9 and 1.9′-1.9′
1.10 : Enlarged view showing a portion of Reproduction 1.7 defined by lines 1.10-1.10 and 1.10′-1.10′
1.11 : Enlarged cross-sectional view along line 1.11 of Reproduction 1.8
1.12 : Enlarged cross-sectional view along line 1.12 of Reproduction 1.9
1.13 : Enlarged cross-sectional view along line 1.13 of Reproduction 1.10
2.1 : Front view
2.2 : Rear view
2.3 : Top plan view
2.4 : Bottom view
2.5 : Right side view
2.6 : Left side view
2.7 : Enlarged view showing a portion of Reproduction 2.2 defined by lines 2.7-2.7 and 2.7′-2.7′
2.8 : Enlarged view showing a portion of Reproduction 2.7 defined by lines 2.8-2.8 and 2.8′-2.8′
2.9 : Enlarged view showing a portion of Reproduction 2.7 defined by lines 2.9-2.9 and 2.9′-2.9′
2.10 : Enlarged view showing a portion of Reproduction 2.7 defined by lines 2.10-2.10 and 2.10′-2.10′
2.11: Enlarged cross-sectional view along line 2.11 of Reproduction 2.8
2.12 : Enlarged cross-sectional view along line 2.12 of Reproduction 2.9
2.13 : Enlarged cross-sectional view along line 2.13 of Reproduction 2.10
1.-2. Designs 1 and 2: each article is a wafer used in the production of photodetectors, or the like; the parts shown in solid lines are parts for which design registration is sought; design 1: reproduction 1.7 is an enlarged view of upper left part of reproduction 1.2; reproduction 1.8 is an enlarged view of upper left part of reproduction 1.7; reproduction 1.9 is an enlarged view of bottom left part of reproduction 1.7; reproduction 1.10 is an enlarged view of upper right part of reproduction 1.7; reproduction 1.11 is an enlarged cross-sectional view in the vertical direction of reproduction 1.8; reproduction 1.12 is an enlarged cross-sectional view in the vertical direction of reproduction 1.9; reproduction 1.13 is an enlarged cross-sectional view in the horizontal direction of reproduction 1.10; design 2: reproduction 2.7 is an enlarged view of upper left part of reproduction 2.2; reproduction of 2.8 is an enlarged view of upper left part of reproduction 2.7; reproduction 2.9 is an enlarged view of bottom left part of reproduction 2.7; reproduction 2.10 is an enlarged view of upper right part of reproduction 2.7; reproduction 2.11 is an enlarged cross-sectional view in the vertical direction of reproduction 2.8; reproduction 2.12 is an enlarged cross-sectional view in the vertical direction of reproduction 2.9; reproduction 2.13 is an enlarged cross-sectional view in the horizontal direction of reproduction 2.10. In the drawings, the dash-dot-dash broken lines are for the purpose of illustrating the boundaries of the claimed design and form no part of the claimed design. The evenly spaced broken lines are for the purpose of showing portions of the semiconductor wafer and form no part of the claimed design.

Claims (1)

    CLAIM
  1. The ornamental design for a semiconductor wafer, as shown and described.
US35/355,063 2018-03-29 2018-09-05 Semiconductor wafer Active USD897974S1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPD2018-6855F JP1618612S (en) 2018-03-29 2018-03-29
JP2018-006854 2018-03-29
JP2018-006855 2018-03-29
JPD2018-6854F JP1618342S (en) 2018-03-29 2018-03-29

Publications (1)

Publication Number Publication Date
USD897974S1 true USD897974S1 (en) 2020-10-06

Family

ID=72645116

Family Applications (1)

Application Number Title Priority Date Filing Date
US35/355,063 Active USD897974S1 (en) 2018-03-29 2018-09-05 Semiconductor wafer

Country Status (1)

Country Link
US (1) USD897974S1 (en)

Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD262962S (en) * 1978-11-03 1982-02-09 Strumpell Winton C Silicon wafer emitter electrode configuration
USD632246S1 (en) * 2008-11-22 2011-02-08 Rin-Soon Park Silicon wafer for solar battery
TWD146040S (en) 2011-02-14 2012-03-21 日本電子材料股份有限公司 Probe card for measuring semiconductor wafer
US8741777B2 (en) * 2010-07-26 2014-06-03 Hamamatsu Photonics K.K. Substrate processing method
US8828260B2 (en) * 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Substrate processing method
USD720313S1 (en) * 2014-06-16 2014-12-30 Emcore Solar Power, Inc. Semiconductor wafer with dicing positions for solar cell fabrication
TWD167113S (en) 2013-05-15 2015-04-11 荏原製作所股份有限公司 Elastic membrane for semiconductor wafer polishing apparatus
USD733913S1 (en) * 2013-12-30 2015-07-07 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD733912S1 (en) * 2013-07-05 2015-07-07 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD733911S1 (en) * 2013-12-30 2015-07-07 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD739954S1 (en) * 2013-07-05 2015-09-29 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD740439S1 (en) * 2013-07-05 2015-10-06 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD740440S1 (en) * 2013-07-05 2015-10-06 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
TWD171962S (en) 2014-11-13 2015-11-21 東京威力科創股份有限公司 Part of the simulated wafer (3)
TWD171960S (en) 2014-11-13 2015-11-21 東京威力科創股份有限公司 Part of the simulated wafer (1)
TWD171961S (en) 2014-11-13 2015-11-21 東京威力科創股份有限公司 Part of the simulated wafer (2)
USD789311S1 (en) * 2015-12-28 2017-06-13 Hitachi Kokusai Electric Inc. Pattern wafer
USD791091S1 (en) * 2015-12-28 2017-07-04 Hitachi Kokusai Electric Inc. Pattern wafer
USD835804S1 (en) * 2016-04-27 2018-12-11 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD836211S1 (en) * 2016-04-27 2018-12-18 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD843012S1 (en) * 2017-01-25 2019-03-12 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD843013S1 (en) * 2017-01-25 2019-03-12 Hamamatsu Photonics K.K. Substrates for spectroscopic analysis
USD843011S1 (en) * 2017-01-25 2019-03-12 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD843594S1 (en) * 2017-01-25 2019-03-19 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD855208S1 (en) * 2017-01-25 2019-07-30 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD855210S1 (en) * 2017-01-25 2019-07-30 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD855205S1 (en) * 2017-01-25 2019-07-30 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis

Patent Citations (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD262962S (en) * 1978-11-03 1982-02-09 Strumpell Winton C Silicon wafer emitter electrode configuration
USD632246S1 (en) * 2008-11-22 2011-02-08 Rin-Soon Park Silicon wafer for solar battery
US8741777B2 (en) * 2010-07-26 2014-06-03 Hamamatsu Photonics K.K. Substrate processing method
US8828260B2 (en) * 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Substrate processing method
TWD146040S (en) 2011-02-14 2012-03-21 日本電子材料股份有限公司 Probe card for measuring semiconductor wafer
TWD167113S (en) 2013-05-15 2015-04-11 荏原製作所股份有限公司 Elastic membrane for semiconductor wafer polishing apparatus
USD750800S1 (en) * 2013-07-05 2016-03-01 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD733912S1 (en) * 2013-07-05 2015-07-07 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD739954S1 (en) * 2013-07-05 2015-09-29 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD740439S1 (en) * 2013-07-05 2015-10-06 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD740440S1 (en) * 2013-07-05 2015-10-06 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD762874S1 (en) * 2013-07-05 2016-08-02 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD750799S1 (en) * 2013-07-05 2016-03-01 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD733911S1 (en) * 2013-12-30 2015-07-07 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD733913S1 (en) * 2013-12-30 2015-07-07 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD720313S1 (en) * 2014-06-16 2014-12-30 Emcore Solar Power, Inc. Semiconductor wafer with dicing positions for solar cell fabrication
USD784937S1 (en) * 2014-11-13 2017-04-25 Tokyo Electron Limited Dummy wafer
TWD171961S (en) 2014-11-13 2015-11-21 東京威力科創股份有限公司 Part of the simulated wafer (2)
TWD171960S (en) 2014-11-13 2015-11-21 東京威力科創股份有限公司 Part of the simulated wafer (1)
TWD171962S (en) 2014-11-13 2015-11-21 東京威力科創股份有限公司 Part of the simulated wafer (3)
USD785576S1 (en) * 2014-11-13 2017-05-02 Tokyo Electron Limited Dummy wafer
USD786810S1 (en) * 2014-11-13 2017-05-16 Tokyo Electron Limited Dummy wafer
USD789311S1 (en) * 2015-12-28 2017-06-13 Hitachi Kokusai Electric Inc. Pattern wafer
USD791091S1 (en) * 2015-12-28 2017-07-04 Hitachi Kokusai Electric Inc. Pattern wafer
USD836211S1 (en) * 2016-04-27 2018-12-18 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD835804S1 (en) * 2016-04-27 2018-12-11 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD843012S1 (en) * 2017-01-25 2019-03-12 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD843013S1 (en) * 2017-01-25 2019-03-12 Hamamatsu Photonics K.K. Substrates for spectroscopic analysis
USD843011S1 (en) * 2017-01-25 2019-03-12 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD843594S1 (en) * 2017-01-25 2019-03-19 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD855208S1 (en) * 2017-01-25 2019-07-30 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD855210S1 (en) * 2017-01-25 2019-07-30 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis
USD855205S1 (en) * 2017-01-25 2019-07-30 Hamamatsu Photonics K.K. Substrate for spectroscopic analysis

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