TW589789B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TW589789B
TW589789B TW092108424A TW92108424A TW589789B TW 589789 B TW589789 B TW 589789B TW 092108424 A TW092108424 A TW 092108424A TW 92108424 A TW92108424 A TW 92108424A TW 589789 B TW589789 B TW 589789B
Authority
TW
Taiwan
Prior art keywords
circuit
voltage
signal
power supply
starter
Prior art date
Application number
TW092108424A
Other languages
English (en)
Chinese (zh)
Other versions
TW200403925A (en
Inventor
Tomohiro Kawakubo
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200403925A publication Critical patent/TW200403925A/zh
Application granted granted Critical
Publication of TW589789B publication Critical patent/TW589789B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
TW092108424A 2002-08-28 2003-04-11 Semiconductor device TW589789B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002249437A JP4021283B2 (ja) 2002-08-28 2002-08-28 半導体装置

Publications (2)

Publication Number Publication Date
TW200403925A TW200403925A (en) 2004-03-01
TW589789B true TW589789B (en) 2004-06-01

Family

ID=31972578

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092108424A TW589789B (en) 2002-08-28 2003-04-11 Semiconductor device

Country Status (5)

Country Link
US (1) US6809565B2 (enExample)
JP (1) JP4021283B2 (enExample)
KR (1) KR100891909B1 (enExample)
CN (1) CN1212705C (enExample)
TW (1) TW589789B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100597635B1 (ko) * 2004-05-20 2006-07-05 삼성전자주식회사 반도체 메모리에서의 내부 초기화 신호 발생기
KR100614645B1 (ko) * 2004-06-03 2006-08-22 삼성전자주식회사 파워-온 리셋회로
US7378886B2 (en) * 2004-10-14 2008-05-27 Fairchild Semiconductor Voltage detection circuit with hysteresis for low power, portable products
US7142024B2 (en) * 2004-11-01 2006-11-28 Stmicroelectronics, Inc. Power on reset circuit
US20070001721A1 (en) * 2005-07-01 2007-01-04 Chi-Yang Chen Power-on reset circuit
US7602222B2 (en) * 2005-09-30 2009-10-13 Mosaid Technologies Incorporated Power up circuit with low power sleep mode operation
FR2895115A1 (fr) * 2005-12-20 2007-06-22 St Microelectronics Sa Detecteur de pics parasites dans l'alimentation d'un circuit integre
JP4253720B2 (ja) * 2006-11-20 2009-04-15 Ｏｋｉセミコンダクタ株式会社 パワーオンリセット回路
KR100854462B1 (ko) * 2007-04-02 2008-08-27 주식회사 하이닉스반도체 초기화 신호 발생 회로
US7962681B2 (en) * 2008-01-09 2011-06-14 Qualcomm Incorporated System and method of conditional control of latch circuit devices
US7786770B1 (en) * 2008-09-30 2010-08-31 Altera Corporation Reducing power consumption by disabling power-on reset circuits after power up
JP5283078B2 (ja) * 2009-01-13 2013-09-04 セイコーインスツル株式会社 検出回路及びセンサ装置
KR101003151B1 (ko) * 2009-05-14 2010-12-21 주식회사 하이닉스반도체 반도체 메모리 장치의 파워 업 신호 생성 회로
DE102009042388B4 (de) * 2009-09-21 2011-06-01 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung zur Einschaltrücksetzung
JP5694850B2 (ja) * 2011-05-26 2015-04-01 株式会社メガチップス スタートアップ回路
JP6166123B2 (ja) * 2013-08-14 2017-07-19 ラピスセミコンダクタ株式会社 半導体装置、および、電源制御方法
CN103746681B (zh) * 2013-12-24 2017-06-30 北京时代民芯科技有限公司 一种cmos器件电源上下电输出三态控制电路
CN104242896A (zh) * 2014-08-20 2014-12-24 络达科技股份有限公司 电子式接触侦测电路及其应用的可携式电子系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641083B1 (enExample) * 1988-12-22 1991-05-10 Sgs Thomson Microelectronics
JPH03290895A (ja) * 1990-04-06 1991-12-20 Sony Corp 半導体集積回路装置
JP2563215B2 (ja) * 1990-06-20 1996-12-11 セイコー電子工業株式会社 半導体集積回路装置
US5494854A (en) * 1994-08-17 1996-02-27 Texas Instruments Incorporated Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films
JP3319559B2 (ja) * 1996-01-16 2002-09-03 株式会社東芝 オートクリア回路
US6055515A (en) * 1996-07-30 2000-04-25 International Business Machines Corporation Enhanced tree control system for navigating lattices data structures and displaying configurable lattice-node labels
US5683922A (en) * 1996-10-04 1997-11-04 United Microelectronics Corporation Method of fabricating a self-aligned contact
KR100240423B1 (ko) * 1997-02-05 2000-01-15 윤종용 반도체 장치의 레벨 검출 회로
US6025277A (en) * 1997-05-07 2000-02-15 United Microelectronics Corp. Method and structure for preventing bonding pad peel back
JPH118295A (ja) * 1997-06-16 1999-01-12 Nec Corp 半導体装置及びその製造方法
JP3703706B2 (ja) 2000-10-18 2005-10-05 富士通株式会社 リセット回路およびリセット回路を有する半導体装置
FR2822956B1 (fr) * 2001-04-02 2003-06-06 St Microelectronics Sa Dispositif de detection d'alimentation

Also Published As

Publication number Publication date
KR20040019861A (ko) 2004-03-06
CN1212705C (zh) 2005-07-27
JP2004088639A (ja) 2004-03-18
CN1479448A (zh) 2004-03-03
US20040041602A1 (en) 2004-03-04
KR100891909B1 (ko) 2009-04-06
JP4021283B2 (ja) 2007-12-12
US6809565B2 (en) 2004-10-26
TW200403925A (en) 2004-03-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees