JP4021283B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4021283B2
JP4021283B2 JP2002249437A JP2002249437A JP4021283B2 JP 4021283 B2 JP4021283 B2 JP 4021283B2 JP 2002249437 A JP2002249437 A JP 2002249437A JP 2002249437 A JP2002249437 A JP 2002249437A JP 4021283 B2 JP4021283 B2 JP 4021283B2
Authority
JP
Japan
Prior art keywords
circuit
power supply
voltage
signal
starter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002249437A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004088639A (ja
JP2004088639A5 (enExample
Inventor
智広 川久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2002249437A priority Critical patent/JP4021283B2/ja
Priority to US10/393,995 priority patent/US6809565B2/en
Priority to KR1020030022503A priority patent/KR100891909B1/ko
Priority to CNB031107079A priority patent/CN1212705C/zh
Priority to TW092108424A priority patent/TW589789B/zh
Publication of JP2004088639A publication Critical patent/JP2004088639A/ja
Publication of JP2004088639A5 publication Critical patent/JP2004088639A5/ja
Application granted granted Critical
Publication of JP4021283B2 publication Critical patent/JP4021283B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2002249437A 2002-08-28 2002-08-28 半導体装置 Expired - Fee Related JP4021283B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002249437A JP4021283B2 (ja) 2002-08-28 2002-08-28 半導体装置
US10/393,995 US6809565B2 (en) 2002-08-28 2003-03-24 Semiconductor device
KR1020030022503A KR100891909B1 (ko) 2002-08-28 2003-04-10 반도체 장치
CNB031107079A CN1212705C (zh) 2002-08-28 2003-04-11 半导体器件
TW092108424A TW589789B (en) 2002-08-28 2003-04-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002249437A JP4021283B2 (ja) 2002-08-28 2002-08-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2004088639A JP2004088639A (ja) 2004-03-18
JP2004088639A5 JP2004088639A5 (enExample) 2005-11-04
JP4021283B2 true JP4021283B2 (ja) 2007-12-12

Family

ID=31972578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002249437A Expired - Fee Related JP4021283B2 (ja) 2002-08-28 2002-08-28 半導体装置

Country Status (5)

Country Link
US (1) US6809565B2 (enExample)
JP (1) JP4021283B2 (enExample)
KR (1) KR100891909B1 (enExample)
CN (1) CN1212705C (enExample)
TW (1) TW589789B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100597635B1 (ko) * 2004-05-20 2006-07-05 삼성전자주식회사 반도체 메모리에서의 내부 초기화 신호 발생기
KR100614645B1 (ko) * 2004-06-03 2006-08-22 삼성전자주식회사 파워-온 리셋회로
US7378886B2 (en) * 2004-10-14 2008-05-27 Fairchild Semiconductor Voltage detection circuit with hysteresis for low power, portable products
US7142024B2 (en) * 2004-11-01 2006-11-28 Stmicroelectronics, Inc. Power on reset circuit
US20070001721A1 (en) * 2005-07-01 2007-01-04 Chi-Yang Chen Power-on reset circuit
US7602222B2 (en) * 2005-09-30 2009-10-13 Mosaid Technologies Incorporated Power up circuit with low power sleep mode operation
FR2895115A1 (fr) * 2005-12-20 2007-06-22 St Microelectronics Sa Detecteur de pics parasites dans l'alimentation d'un circuit integre
JP4253720B2 (ja) * 2006-11-20 2009-04-15 Ｏｋｉセミコンダクタ株式会社 パワーオンリセット回路
KR100854462B1 (ko) * 2007-04-02 2008-08-27 주식회사 하이닉스반도체 초기화 신호 발생 회로
US7962681B2 (en) * 2008-01-09 2011-06-14 Qualcomm Incorporated System and method of conditional control of latch circuit devices
US7786770B1 (en) * 2008-09-30 2010-08-31 Altera Corporation Reducing power consumption by disabling power-on reset circuits after power up
JP5283078B2 (ja) * 2009-01-13 2013-09-04 セイコーインスツル株式会社 検出回路及びセンサ装置
KR101003151B1 (ko) * 2009-05-14 2010-12-21 주식회사 하이닉스반도체 반도체 메모리 장치의 파워 업 신호 생성 회로
DE102009042388B4 (de) * 2009-09-21 2011-06-01 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung zur Einschaltrücksetzung
JP5694850B2 (ja) * 2011-05-26 2015-04-01 株式会社メガチップス スタートアップ回路
JP6166123B2 (ja) * 2013-08-14 2017-07-19 ラピスセミコンダクタ株式会社 半導体装置、および、電源制御方法
CN103746681B (zh) * 2013-12-24 2017-06-30 北京时代民芯科技有限公司 一种cmos器件电源上下电输出三态控制电路
CN104242896A (zh) * 2014-08-20 2014-12-24 络达科技股份有限公司 电子式接触侦测电路及其应用的可携式电子系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641083B1 (enExample) * 1988-12-22 1991-05-10 Sgs Thomson Microelectronics
JPH03290895A (ja) * 1990-04-06 1991-12-20 Sony Corp 半導体集積回路装置
JP2563215B2 (ja) * 1990-06-20 1996-12-11 セイコー電子工業株式会社 半導体集積回路装置
US5494854A (en) * 1994-08-17 1996-02-27 Texas Instruments Incorporated Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films
JP3319559B2 (ja) * 1996-01-16 2002-09-03 株式会社東芝 オートクリア回路
US6055515A (en) * 1996-07-30 2000-04-25 International Business Machines Corporation Enhanced tree control system for navigating lattices data structures and displaying configurable lattice-node labels
US5683922A (en) * 1996-10-04 1997-11-04 United Microelectronics Corporation Method of fabricating a self-aligned contact
KR100240423B1 (ko) * 1997-02-05 2000-01-15 윤종용 반도체 장치의 레벨 검출 회로
US6025277A (en) * 1997-05-07 2000-02-15 United Microelectronics Corp. Method and structure for preventing bonding pad peel back
JPH118295A (ja) * 1997-06-16 1999-01-12 Nec Corp 半導体装置及びその製造方法
JP3703706B2 (ja) 2000-10-18 2005-10-05 富士通株式会社 リセット回路およびリセット回路を有する半導体装置
FR2822956B1 (fr) * 2001-04-02 2003-06-06 St Microelectronics Sa Dispositif de detection d'alimentation

Also Published As

Publication number Publication date
TW200403925A (en) 2004-03-01
US20040041602A1 (en) 2004-03-04
CN1479448A (zh) 2004-03-03
JP2004088639A (ja) 2004-03-18
KR100891909B1 (ko) 2009-04-06
KR20040019861A (ko) 2004-03-06
CN1212705C (zh) 2005-07-27
TW589789B (en) 2004-06-01
US6809565B2 (en) 2004-10-26

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