KR100891909B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100891909B1
KR100891909B1 KR1020030022503A KR20030022503A KR100891909B1 KR 100891909 B1 KR100891909 B1 KR 100891909B1 KR 1020030022503 A KR1020030022503 A KR 1020030022503A KR 20030022503 A KR20030022503 A KR 20030022503A KR 100891909 B1 KR100891909 B1 KR 100891909B1
Authority
KR
South Korea
Prior art keywords
circuit
power supply
voltage
starter
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030022503A
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English (en)
Korean (ko)
Other versions
KR20040019861A (ko
Inventor
가와쿠보도모히로
Original Assignee
후지쯔 마이크로일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쯔 마이크로일렉트로닉스 가부시키가이샤 filed Critical 후지쯔 마이크로일렉트로닉스 가부시키가이샤
Publication of KR20040019861A publication Critical patent/KR20040019861A/ko
Application granted granted Critical
Publication of KR100891909B1 publication Critical patent/KR100891909B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
KR1020030022503A 2002-08-28 2003-04-10 반도체 장치 Expired - Fee Related KR100891909B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002249437A JP4021283B2 (ja) 2002-08-28 2002-08-28 半導体装置
JPJP-P-2002-00249437 2002-08-28

Publications (2)

Publication Number Publication Date
KR20040019861A KR20040019861A (ko) 2004-03-06
KR100891909B1 true KR100891909B1 (ko) 2009-04-06

Family

ID=31972578

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030022503A Expired - Fee Related KR100891909B1 (ko) 2002-08-28 2003-04-10 반도체 장치

Country Status (5)

Country Link
US (1) US6809565B2 (enExample)
JP (1) JP4021283B2 (enExample)
KR (1) KR100891909B1 (enExample)
CN (1) CN1212705C (enExample)
TW (1) TW589789B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100597635B1 (ko) * 2004-05-20 2006-07-05 삼성전자주식회사 반도체 메모리에서의 내부 초기화 신호 발생기
KR100614645B1 (ko) * 2004-06-03 2006-08-22 삼성전자주식회사 파워-온 리셋회로
US7378886B2 (en) * 2004-10-14 2008-05-27 Fairchild Semiconductor Voltage detection circuit with hysteresis for low power, portable products
US7142024B2 (en) * 2004-11-01 2006-11-28 Stmicroelectronics, Inc. Power on reset circuit
US20070001721A1 (en) * 2005-07-01 2007-01-04 Chi-Yang Chen Power-on reset circuit
US7602222B2 (en) * 2005-09-30 2009-10-13 Mosaid Technologies Incorporated Power up circuit with low power sleep mode operation
FR2895115A1 (fr) * 2005-12-20 2007-06-22 St Microelectronics Sa Detecteur de pics parasites dans l'alimentation d'un circuit integre
JP4253720B2 (ja) * 2006-11-20 2009-04-15 Ｏｋｉセミコンダクタ株式会社 パワーオンリセット回路
KR100854462B1 (ko) * 2007-04-02 2008-08-27 주식회사 하이닉스반도체 초기화 신호 발생 회로
US7962681B2 (en) * 2008-01-09 2011-06-14 Qualcomm Incorporated System and method of conditional control of latch circuit devices
US7786770B1 (en) * 2008-09-30 2010-08-31 Altera Corporation Reducing power consumption by disabling power-on reset circuits after power up
JP5283078B2 (ja) * 2009-01-13 2013-09-04 セイコーインスツル株式会社 検出回路及びセンサ装置
KR101003151B1 (ko) * 2009-05-14 2010-12-21 주식회사 하이닉스반도체 반도체 메모리 장치의 파워 업 신호 생성 회로
DE102009042388B4 (de) * 2009-09-21 2011-06-01 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung zur Einschaltrücksetzung
JP5694850B2 (ja) * 2011-05-26 2015-04-01 株式会社メガチップス スタートアップ回路
JP6166123B2 (ja) * 2013-08-14 2017-07-19 ラピスセミコンダクタ株式会社 半導体装置、および、電源制御方法
CN103746681B (zh) * 2013-12-24 2017-06-30 北京时代民芯科技有限公司 一种cmos器件电源上下电输出三态控制电路
CN104242896A (zh) * 2014-08-20 2014-12-24 络达科技股份有限公司 电子式接触侦测电路及其应用的可携式电子系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910019048A (ko) * 1990-04-06 1991-11-30 오오가 노리오 반도체 집적 회로 장치
KR19980067523A (ko) * 1997-02-05 1998-10-15 김광호 반도체 장치의 레벨 검출 회로

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2641083B1 (enExample) * 1988-12-22 1991-05-10 Sgs Thomson Microelectronics
JP2563215B2 (ja) * 1990-06-20 1996-12-11 セイコー電子工業株式会社 半導体集積回路装置
US5494854A (en) * 1994-08-17 1996-02-27 Texas Instruments Incorporated Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films
JP3319559B2 (ja) * 1996-01-16 2002-09-03 株式会社東芝 オートクリア回路
US6055515A (en) * 1996-07-30 2000-04-25 International Business Machines Corporation Enhanced tree control system for navigating lattices data structures and displaying configurable lattice-node labels
US5683922A (en) * 1996-10-04 1997-11-04 United Microelectronics Corporation Method of fabricating a self-aligned contact
US6025277A (en) * 1997-05-07 2000-02-15 United Microelectronics Corp. Method and structure for preventing bonding pad peel back
JPH118295A (ja) * 1997-06-16 1999-01-12 Nec Corp 半導体装置及びその製造方法
JP3703706B2 (ja) 2000-10-18 2005-10-05 富士通株式会社 リセット回路およびリセット回路を有する半導体装置
FR2822956B1 (fr) * 2001-04-02 2003-06-06 St Microelectronics Sa Dispositif de detection d'alimentation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910019048A (ko) * 1990-04-06 1991-11-30 오오가 노리오 반도체 집적 회로 장치
KR19980067523A (ko) * 1997-02-05 1998-10-15 김광호 반도체 장치의 레벨 검출 회로

Also Published As

Publication number Publication date
TW200403925A (en) 2004-03-01
JP4021283B2 (ja) 2007-12-12
US20040041602A1 (en) 2004-03-04
CN1479448A (zh) 2004-03-03
JP2004088639A (ja) 2004-03-18
KR20040019861A (ko) 2004-03-06
CN1212705C (zh) 2005-07-27
TW589789B (en) 2004-06-01
US6809565B2 (en) 2004-10-26

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