TW565921B - Semiconductor device with co-packaged die - Google Patents

Semiconductor device with co-packaged die Download PDF

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Publication number
TW565921B
TW565921B TW091124046A TW91124046A TW565921B TW 565921 B TW565921 B TW 565921B TW 091124046 A TW091124046 A TW 091124046A TW 91124046 A TW91124046 A TW 91124046A TW 565921 B TW565921 B TW 565921B
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Taiwan
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semiconductor
item
patent application
clip
scope
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TW091124046A
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English (en)
Inventor
Martin Standing
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Int Rectifier Corp
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    • H—ELECTRICITY
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

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565921 五、發明說明（1) I技術領域】 置，關於半導體裝置，特別是關於一種半導體裝 /、 括至少兩個共同封裝裸晶的半導體。 【先如技術】 ，、同封裝的裝置，通常說成copaks，係眾所皆去 置包括兩個或更多相同或不同的半導 插垃老 裳在一個共同的外殼（housing)中。逵釗、士 種好處，伤益； 〜， 逐到14
姑、田B 精由一種排列，該排列於電路板上，鱼彻w B 裝稞晶的丰瀑辦# π 低丄興個別封 Λ Μ 導體就同一電路相同功能而言，相較 占據較少空間。銥少π + …奴之下， 的裳置且/y Λ 然允許建構更多緊密 多電子元件複雜的裝置’該裝置係於相同空間有更 許多共同封裝的裝置包括一個鑄 以鉛為材料的冰k从士 口待棋成^的外殼與一個 抗環Hi : I、？卜殼提供保護予半 其用以、查妓坐列濕瑕，而鉛為材料的外框， : 連接半導體裸晶到外部元件， ;。因此，習知的排列要求許多零件該= 電路 多裳其製程更加複雜。•言之，可要Λ ▼牛於八同封裝裝置内，而減少所需的零件數。4 【發明内容】 根據本發明的半導體裝置，其、 目似的半導體裸晶。兩個半導 ^ 、目同或不 子肢稞日日係共同封裝於一個共 第5頁 565921 五、發明說明（2) 同的外部金屬夾（common outer metal clip)，其當作至 少一個半導體裸晶的外部連接器。 根據本發明的第一層面，兩個相同或不相似的半導體 裸晶’係共同封裝於一個共同的外部金屬夾（c〇mm〇r] outer metal c 1 ip)，其當作裸晶的外殼，且當作電氣連 接為，以連接其中一個裸晶，到電子電路的外部元件。 特別地，根據本發明的共同封裝半導體裝置，包括一 個金屬容器’金屬容器具有一個平坦的金屬薄片部（web portion)，與複數個外牆（waiis)，以定義一個空間。一 個第一半導體裸晶，其可為一個金氧半場效電晶體 (M0SFET) ’係藉由一個傳導層或導電性的環氧樹脂層於其 汲極電極（drain electrode)電氣連接於薄片部（web portion)。此二昇起的部份，自外部金屬夾（c〇mm〇n outer metal cl ip)兩相對面向外牆（wal ls)的邊緣，延伸 到位於一個基板上的電極，該基板可為一塊電路板，因而 連接金氧半場效電晶體^“肫以的汲極電極（drain electrode)到位於一個電子電路的適當位置。 一個第二半導體裸晶係位於一個内部夾具（inner clip)中，該夾具係藉由一個絕緣層，而連接至與外部夾 二（〇 u t e r c 1 i p )絕緣的薄片部（w e七ρ 〇 Γ 士 i 〇 n)。一個第二 ，導體裸晶可為一個金氧半場效電晶體（M〇SFET)，其係與 第一半導體裸晶相同，或可為一個於半導體晶片上的. 電路’積體電路係控制第一半導體裸晶的運作。 根據本發明的第一層面，第一半導體裸晶的厚度，内 565921 五、發明說明（3) ----- 部晶片與第一半導體裸晶的總高度，皆 個別的頂端表面，係彼此共平面，且最好使侍他們 _本上土 i I好成與上昇部的接 觸表面共平面。為達成此一效果，第二 於基底而降低整體厚度。 牛導體裸晶可接觸 根據本發明的内部夾具（inner clip)，其勺 ί f°ireirt nS) t 只貝上延伸自底板（bottom plate)的邊餘 +曰,. 、 緣。至少一個内部 夾具（inner clip)的外牆（waiis)包括延伸部 portion)，延伸部係彎曲，以定義一個接^ ^Xtende(1 (co^act surface)，該接觸表面係最好能夠鱼面 的幵起部共平面。内部夾具（inner cHp)的接觸表。 一個基板的適當墊片（pad)相接觸，以便連接 道触、 裸晶至其位於一個電子電路的位置。最好的 一，β处ί 2:夹具d — Hp)的外部表面經化學處理，以 ，表面’或是由電絕緣高分子層絕緣，例如聚亞 、巴 (polywide)。内部夾具（inner cHp)的内 佈高導電性的金屬材料，例如銀。内部夾具面最好塗 的形成，可藉由銅f0(copper f〇il)邊緣 二1* 2 =) 根據本發明第二實施例，一個共同封裝的半導體 匕括一個外部夾具（outer clip)，外部夾具可為一 ^ ，該金屬係實質上類似於第一實施例所使 金A _ 本發明第二實施例，半導體裝置包括至少兩=或^
565921 五、發明說明（4) "" ' -- 似的半導體雜Θ 斗| ^ Βθ，該半導體裸晶每個具有至少一個主要電 ° /、糸藉由一層焊錫層（s〇Her J )或導電性環氧 脂（EPOXY)電性造垃$ 連接至外部夾具（outerclip)的薄片部 ion) 於本發明實施例，外部夾具（〇 u t e r
Cw/P '作一個半導體裸晶的外殼（housing)，與一個連接 ""八提供連接該裝置到位於同一電子電路的外部元件。 本發明的其它特點與優點，將於本發明的下列說明 隨圖式而揭露出來。 【實施方式】 圖1係根據本發明第一實施例的半導體裝置1 〇。半導 體裝置10包括一個外部導電性夾具（〇uter c〇nductive clip)12。外部導電性夾具（〇uter c〇nductive ^^)12係 二塊金屬容器，金屬容器包括薄片部（web p〇rti〇n)14& 複數個外牆（walls)16，外牆可從薄片部（web p〇rti〇n)i4 的邊緣延伸，以定義一個空間。外部導電性夾具（οΜπ conduct i ve c 1 i p) 1 2可從銅或更優良地，以銀為材料鍍膜 而製彳于。第一半導體裸晶18係置於外部導電性夾具（〇uter conductive clip)12的外牆（waHs)i6空間内。第一半導 體裸晶1 8可為一個垂直導電的金氧半場效電晶體 (M0SFET)、功率一極體（p0wer di〇de)、絕緣柵雙極晶體 管（IGBT)或其它類似元件。 於本發明第一實施例，第一半導體裝置丨8係一個垂直 導電的金氧半場效電晶體（M0SFET)，其具有源極電極
565921
五、發明說明（5) (source electrode)20、閘極電極（gate 61“1^〇(16)22與 汲極電極（gate electrode)24 (如圖2所示）。 請參考圖2 ’第一半導體裝置18的沒極電極（gate elect rode) 24，其藉由一層導電性材料26，該導電性材料 26可為焊錫（s〇lder)或導電性導電性環氧樹脂（ep〇xy)， 電性連接於外部導電性夾具（outer conductive clip)l2 的薄片部（web portioif)14。根據本發明第一實施例，半 導體裝置10同時包括一個内部夾具（inner clip)28，該内 部夾具（inner cl ip)28係置於外部導電性夾具（〇uter conductive Clip)l2 的外牆（walls)16 空間内。 參考圖3與圖4，内部夾具（inner clip)28最好能從_ 個例如一銅片之薄金屬導電板製得，且最好包括垂直延伸 的外騰3 0 ’外牆3 〇即為一個位於底板部位3 2的空間。内部 夾具（inner clip)28同時包括一個延伸部34，延伸部34延 伸自位於夾具（inner clip)28的外牆3〇其中一個邊緣，且 係彎^以提供一個接觸表面33。内部夾具（inner clip)28 的内部表面（interior surface)可鍍以高度導電性材料， 例如銀，於其外部表面，可經化學處理後，以製造阻隔材 料（11^1：1&1：^6)或塗佈絕緣性的膠合劑（^}1^1” fllm) 例如聚亞醯胺（polyimide)。内部夾具（inner ip)28最好月匕藉由提咼薄銅箔c〇pper foil)的外 部邊緣’而形成外牆（wa丨丨s ) 3 〇。 外私（wa 1 1 s )的其中一個係如此形成，應有延伸部 3 4，其係往外彎曲以曝露延伸部3 4的内部表面為接觸表面
第9頁 565921 五、發明說明（6) '—^ (contact surface ) 33。用來形成内部夾具（inner clip)28的銅箔，應比外部夾具（〇uter。丨4)12的深度來 得薄。於較佳實施例，比方說，約〇1〇〇釐米（mm)厚的 銅箔，係使用於深度約〇 · 3 9 6釐米（mm )的外部夾具 (outer c1 ip) 12 〇 現在請參考圖1與圖2，第二半導體裸晶36位於—内部 夾具（inner clip)28的外牆（wans)3〇空間内。於第_實 施例，第二半導體裸晶可以為一個金氧半場效電晶體、 (M0SFET)，金氧半場效電晶體（M〇SFET)具有一個汲極電極 (drain electrode)(未表示於圖），係藉由一個傳導層 (conductive layer ) 38而電性連接於内部夾具（innerB clip)28，傳導層（conductive layer)38可為焊錫或傳導 性的導電性環氧樹脂（epoxy)，例如一種載入銀的環氧樹 脂（epoxy)。内部夾具（inner cHp)28 的外牆（wans)3〇 當作阻隔體（dam)，以避免焊錫或導電性環氧 溢出或接觸外部夾具（outer clip)12的薄片部（web P〇rtl〇n)14，第二半導體裸晶36係藉由一個絕緣層4〇隔離 於外部夾具（outer clip)12，而絕緣層4〇係位於内部夹且 (inner clip)28的底部與外部夾具（〇uter以1?)12的薄片、 部（web p〇rti〇n)14。於較佳實施例，第一半 ' 的厚度約0.350，係藉由導電性材料26昇高到外部 (outer C11P)12深度的頂端。第二半導體裸晶36也將内 夹具（inner clip)28昇高，以便頂端的表面與一 導體裸晶18頂端的表面共平面。為得到這個結果，必須使
565921 五、發明說明（7) 用一個裸晶，該裸晶係較第一半導體裸晶丨8為薄。於較佳 貫施例’第一半導體裸晶36係0.200董米（mm)厚為達此 厚度’裸晶的背部可置於底部，使得其於放置於内部夾具 (inner clip)28前，能容納所要的厚度。
現在請參考圖7，根據本發明的一個層面，外部夾具 (outer clip)12包括至少兩個昇高部（raised portions)42 ’ 昇高部（raised portions)42 係昇起自外部 夾具（outer clip)12兩相對面向外牆（waiis)的邊緣。每 一個昇高部（raised p〇rti〇ns)42都有一個平坦接觸表 面，以供與位於基板45對應電性的墊片（pads)43為電性接 觸，該基板可為一塊電路板或一個絕緣金屬基板 (Insulated Metal Substrate)。透過昇高部（raised p〇rti〇ns)42，第一半導體裸晶18的汲極電極（drain electrode)24係電性連接於其位於同一電子電路的適當位 置。因此，外部夾具（outer ciip) 12當作第一半導體裸晶 1 8的外殼與電性連接器。
根據本發明第一實施例於半導體裝置丨〇，延伸部34的 接觸表面33，第一半導體裸晶is的源極電極（s〇urce electrode)20與第二半導體裸晶36的源極電極（s〇urce electrode)35係與外部夾具（outer clip)12昇高部 (raised portions)42的接觸表面33共平面。接觸表面連 接第二半導體裸晶36的汲極電極於一個適當的傳導塾 (conductive pad)47，傳導墊（conductive pad)47 係位於 一個基板45上，以便連接第二半導體裸晶36的汲極電極到
565921 五、發明說明（8) 其位於同一電子電路的適當位置。 圖5與圖6 ’其中相近似的數字編號表示相近似的特 徵，顯示根據本發明第二實施例半導體裝置44。根據本發 明第二實施例，半導體裝置44包括第一與第二半導體裝置 18、18’，該裝置可為金氧半場效電晶體（M〇SFETs)。然
而，功率二極體（power di〇des)、絕緣柵雙極晶體管 (I GBT)及其它類似元件’可被用於替代金氧半場效電晶體 (MOSFETs)。第一與第二半導體裝置18、18’的汲極電極 24、24’ ，係藉由導電層27、27,電性連接外部夾具（outer clip)12的薄片部（web p〇rtion)14。一個共同導電層可被 用以取代獨立的導電層27、27，，而導電層27、27，可為焊 錫層（solder layer)或導電性環氧樹脂（Ερ〇χγ)，例如一 種載入銀的J辰氧樹脂（epQXy)。第一與第二半導體穿置 18、18’的源極電極20、20’係彼此共平面，且最好能與外 部夾具（outer clip)12的昇高部（raised 平面。 於第二實施例’外部夾具（outer cl ip)l2當作一個外 设’也當作一個半導體裸晶汲極電極24、24，的共同連接 器（common connector)。如圖 8 所示，昇高部（raised P〇rt10ns)42係電性連接基板45上的墊片（pads)43，以便 連接至裸晶沒極電極24、24於其位於同一電子電路的適 當位置。裸晶源極電極20、20,同時也電性連接於基板^ 上的墊片（pads)49，而因此連接源極電極2〇、2〇，到其位 於如圖8所示電子電路的適當位置。
565921 五、發明說明（9) 熟習本技藝的人士將明白本發明，可實行於多種半導 體裸晶的組合，其使用於此揭露的發明概念，且由範例並 參照貫施例而為可實行。例如，於第一實施例，第二半導 體裸晶36可被簫特基二極體（sch〇ttky di〇de)，或一個控 制積=T St 2所取代，其用於控制第一半導體裸晶18。 而已，非為用=二ΐ式^及說明，僅為本發明之較佳實ί例 人士 1所依本挤日^疋本^發明之實施，大凡熟悉該項技蟄之 在以下太π Η發之精神，所作之變化或修飾，皆應涵蓋 在乂下本發明之中請專_胃1
565921 圖式簡單說明 【圖式簡單說明】 圖1係根據本發明第一實施例，一種半導體裝置的上方平 面圖。 圖2顯示本發明第一實施例，以圖1線卜1的方向觀察的剖 面圖。 圖3係根據本發明的一個層面，内部夾具（inner Clip)的 側面圖。 - 圖4係根據本發明的一個層面，圖3所示，内部夾具（inner clip)的上方平面圖。 圖5係根據本發明的第二實施例，一個層面，圖3所示，内 部夾具（inner clip)的上方平面圖。 圖6係根據本發明的第二實施例，於圖5線2 - 2的方向觀察 的剖面圖。 圖7係根據本發明的第一實施例，連接到一個基板的半導 體裝置。 圖8係根據本發明的第二實施例，連接到一個基板的半導 體裝置。 圖式編號說明】 1012141618 半導體裝置外部導電性夾具（outer conductive clip) 薄片部（web portion)外牆（w a 1 1 s) 第一半導體裝置（裸晶） 參
第14頁 565921 圖式簡單說明 18’ 20 2(T 22 24 24’ 26 27 27’ 28 30 32 33 34 35 36 38 40 42 43 44 45 47 49 半導體裝置（裸晶） 源極電極 源極電極 閘極電極（gate electrode) >及極電極 沒極電極 導電性材料 < 導電層 導電層 内部夾具（inner clip) 外牆 底板部位 接觸表面 延伸部 源極電極（source electrode) 第二半導體裸晶 傳導層（conduct i ve layer) 絕緣層 昇高部（raised portions) 墊片（pads) 半導體裝置 基板 傳導墊（conductive pad) 墊片（pads)
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Claims (1)

  1. 565921 六、申請專利範圍 1· 一種含共同封裝晶片的半導體裝置，包括： 、 外部導電性夾具，其具有一薄片部（web p〇rt i 〇n) 與複數個外牆（wal Is)，該外牆係延伸自薄片部（web portion)的邊緣以定義一空間； 第 半導體裸晶’其具有至少兩個主要電極，每一 電極位於該第一半導體裸晶的個別主要表面； 一導電層（conductive layer)，係電性連接該主要電 極的其中之一於該薄片部（web portion);
    一内部夾具（inner clip)，其具有複數個外牆 (walls) ’且放在該空間且於該薄片部（web ρ〇ΓΗ〇η)上； 一第二半導體裸晶，其至少部份是位於在該空間且内 4 導電性夾具（inner conductive clip)。 2·如申請專利範圍第1項所述之含共同封裝晶片的半導體 裝置其中該外部導電性夾具（outer conductive cl ip)，包括兩個昇起部（raised p〇rti〇ns)，其係延伸自 該幵起部本身兩個相對面向外牆（w a 1 1 s)的邊緣，每一昇 起部包括一接觸表面，該接觸表面用以提供電性接觸於位 在一基板上的一對應電性接觸墊片（electrical c〇ntac^ pad)。 3 ·如申請專利範圍第2項所述之含共同封裝晶片的半導體 裝置’其中該内部夾具（inner cl ip)包括一延伸自該部的 至少一外牆（wal 1)，該外牆係與該外部導電性夾具（〇uter
    第16頁 565921 六、申請專利範圍 conductive c1i 該接觸表面共平 4 ·如申請專利範 裝置，其中該内 於該薄片部（web 5 ·如申請專利範 裝置，其中該第 體（MOSFETs)。 6·如申請專利範 裝置，其中該第 (M0SFET)，而具 極電極連接至該 裸晶係一積體電 (M0SFET)。 7 ·如申請專利範 裝置’其中該内 成0 8 ·如申請專利範 裝置，其中該内
    P)之該兩個升同口P (raised portions)的 面。 圍第1項所述之含共同封裝晶片的半導體 部夾具（inner cl ip)係連接至，但卻隔離 Portion) 0 圍第1項所述之含共同封裝晶片的半導體 一與該第二半導體裸晶係金氧半場效電晶 圍第1項所述之含共同封裝晶片的半導體 —半導體裸晶係一金氧半場效電晶體 ，〜汲極電極（drain electrode)，該汲 薄片部（web portion)，且該第二半導體 路而用以控制該金氧半場效電晶體 ，第1項所述之含共同封裝晶片的半導體 部爽具（inner clip)係由銅（copper)製 ^第1項所述之含共同封裝晶片的半導體 4失具（inner cl i p)的外部表面係絕緣的 第17頁 565921 六、申請專利範圍 (insulated) ° 9. 如申請專利範圍第1項所述之含共同封裴晶片的半導體 裝置’其中該内部爽具（inner clip)的内部表面係以銀& 膜（coated with silver) 〇 10. 如申請專利範圍第1-項所述之含共同封裝晶片的 裝置，進-步地包括-絕緣層，該絕緣層連接該内部夹^ (inner clip)於該薄片部（web p〇rti〇n)。 ’、 11·如申請專利範圍第1項所述之含共同封裝晶片的 $置，其中該第二半導體裸晶係較該第_半導體裸晶為 薄。 12. 如申請專利範圍第丨項所述之含共同封裝晶片的 裝置，其中該第二半導體裰晶俦蕤道你Μ 卞守肢採日日係籍由導電性的環氧樹脂 (EPOXY)電性連接於該内部夾具（inner clip)。 13. 如申請專利範圍第i項至第12項任一項所述之含共同封 裝晶片的半導體裝置，其中該外部導電性夹具（〇uter conductive clip)係一金屬容器（mental can’、）。
    第18頁
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