TW552666B - Method for fabricating a high-permittivity dielectric capacitor for a semiconductor device - Google Patents

Method for fabricating a high-permittivity dielectric capacitor for a semiconductor device Download PDF

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Publication number
TW552666B
TW552666B TW088113791A TW88113791A TW552666B TW 552666 B TW552666 B TW 552666B TW 088113791 A TW088113791 A TW 088113791A TW 88113791 A TW88113791 A TW 88113791A TW 552666 B TW552666 B TW 552666B
Authority
TW
Taiwan
Prior art keywords
layer
reaction chamber
button
tantalum
electrode
Prior art date
Application number
TW088113791A
Other languages
English (en)
Chinese (zh)
Inventor
Chul-Ju Hwang
Original Assignee
Chul-Ju Hwang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chul-Ju Hwang filed Critical Chul-Ju Hwang
Application granted granted Critical
Publication of TW552666B publication Critical patent/TW552666B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
TW088113791A 1998-08-04 1999-08-12 Method for fabricating a high-permittivity dielectric capacitor for a semiconductor device TW552666B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980031766A KR100286011B1 (ko) 1998-08-04 1998-08-04 반도체소자의캐퍼시터및그제조방법

Publications (1)

Publication Number Publication Date
TW552666B true TW552666B (en) 2003-09-11

Family

ID=19546418

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088113791A TW552666B (en) 1998-08-04 1999-08-12 Method for fabricating a high-permittivity dielectric capacitor for a semiconductor device

Country Status (4)

Country Link
US (1) US6338995B1 (enExample)
JP (1) JP2000058878A (enExample)
KR (1) KR100286011B1 (enExample)
TW (1) TW552666B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100328454B1 (ko) 1999-06-29 2002-03-16 박종섭 반도체 소자의 캐패시터 제조 방법
KR100331270B1 (ko) * 1999-07-01 2002-04-06 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR100386447B1 (ko) * 1999-12-23 2003-06-02 주식회사 하이닉스반도체 반도체장치의 커패시터 제조방법
KR100313091B1 (ko) * 1999-12-29 2001-11-07 박종섭 반도체장치의 ＴａＯＮ 게이트절연막 형성방법
KR100321178B1 (ko) * 1999-12-30 2002-03-18 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR20010066386A (ko) * 1999-12-31 2001-07-11 박종섭 플래시 메모리의 게이트전극 제조방법
KR100367404B1 (ko) * 1999-12-31 2003-01-10 주식회사 하이닉스반도체 다층 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR100618683B1 (ko) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100587047B1 (ko) * 2000-06-01 2006-06-07 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100618682B1 (ko) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100639200B1 (ko) * 2000-06-30 2006-10-31 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100599440B1 (ko) * 2000-06-30 2006-07-12 주식회사 하이닉스반도체 캐패시터의 제조 방법
US6934262B1 (en) 2000-08-26 2005-08-23 Cisco Technology, Inc. Method and apparatus for restricting the assignment of VLANs
KR100386450B1 (ko) * 2000-12-29 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 커패시터 형성방법
KR100401503B1 (ko) * 2001-04-30 2003-10-17 주식회사 하이닉스반도체 반도체소자의 캐패시터 및 그 제조방법
KR100910220B1 (ko) * 2002-07-12 2009-07-31 주식회사 하이닉스반도체 반도체소자의 유전체박막 제조방법
KR20060072680A (ko) * 2004-12-23 2006-06-28 주식회사 하이닉스반도체 반도체 장치의 커패시터 및 그 제조방법
US20100302707A1 (en) * 2009-05-26 2010-12-02 General Electric Company Composite structures for high energy-density capacitors and other devices

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JPS61134013A (ja) * 1984-12-04 1986-06-21 Sanyo Electric Co Ltd 化合物半導体結晶成長法
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
US5569619A (en) 1992-06-24 1996-10-29 Lg Semicon Co., Ltd. Method for forming a capacitor of a semiconductor memory cell
JP3334323B2 (ja) * 1994-03-17 2002-10-15 ソニー株式会社 高誘電体膜の形成方法
JP3319138B2 (ja) * 1994-03-17 2002-08-26 ソニー株式会社 タンタルを含む高誘電体膜の形成方法
JP3444013B2 (ja) * 1994-08-10 2003-09-08 日新電機株式会社 強誘電体膜形成方法及び装置
KR0155879B1 (ko) 1995-09-13 1998-12-01 김광호 오산화 이탄탈륨 유전막 커패시터 제조방법
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US6075691A (en) * 1997-03-06 2000-06-13 Lucent Technologies Inc. Thin film capacitors and process for making them
US6107155A (en) * 1998-08-07 2000-08-22 Taiwan Semiconductor Manufacturing Company Method for making a more reliable storage capacitor for dynamic random access memory (DRAM)

Also Published As

Publication number Publication date
US6338995B1 (en) 2002-01-15
JP2000058878A (ja) 2000-02-25
KR100286011B1 (ko) 2001-04-16
KR20000013090A (ko) 2000-03-06

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