KR100286011B1 - 반도체소자의캐퍼시터및그제조방법 - Google Patents

반도체소자의캐퍼시터및그제조방법 Download PDF

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Publication number
KR100286011B1
KR100286011B1 KR1019980031766A KR19980031766A KR100286011B1 KR 100286011 B1 KR100286011 B1 KR 100286011B1 KR 1019980031766 A KR1019980031766 A KR 1019980031766A KR 19980031766 A KR19980031766 A KR 19980031766A KR 100286011 B1 KR100286011 B1 KR 100286011B1
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KR
South Korea
Prior art keywords
tantalum
oxide film
capacitor
gas
nitride oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980031766A
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English (en)
Korean (ko)
Other versions
KR20000013090A (ko
Inventor
황철주
김기범
Original Assignee
황철주
주성엔지니어링주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 황철주, 주성엔지니어링주식회사 filed Critical 황철주
Priority to KR1019980031766A priority Critical patent/KR100286011B1/ko
Priority to JP11220171A priority patent/JP2000058878A/ja
Priority to US09/368,210 priority patent/US6338995B1/en
Priority to TW088113791A priority patent/TW552666B/zh
Publication of KR20000013090A publication Critical patent/KR20000013090A/ko
Application granted granted Critical
Publication of KR100286011B1 publication Critical patent/KR100286011B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
KR1019980031766A 1998-08-04 1998-08-04 반도체소자의캐퍼시터및그제조방법 Expired - Fee Related KR100286011B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019980031766A KR100286011B1 (ko) 1998-08-04 1998-08-04 반도체소자의캐퍼시터및그제조방법
JP11220171A JP2000058878A (ja) 1998-08-04 1999-08-03 半導体素子のキャパシタ及びその製造方法
US09/368,210 US6338995B1 (en) 1998-08-04 1999-08-04 High-permittivity dielectric capacitor for a semiconductor device and method for fabricating the same
TW088113791A TW552666B (en) 1998-08-04 1999-08-12 Method for fabricating a high-permittivity dielectric capacitor for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980031766A KR100286011B1 (ko) 1998-08-04 1998-08-04 반도체소자의캐퍼시터및그제조방법

Publications (2)

Publication Number Publication Date
KR20000013090A KR20000013090A (ko) 2000-03-06
KR100286011B1 true KR100286011B1 (ko) 2001-04-16

Family

ID=19546418

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980031766A Expired - Fee Related KR100286011B1 (ko) 1998-08-04 1998-08-04 반도체소자의캐퍼시터및그제조방법

Country Status (4)

Country Link
US (1) US6338995B1 (enExample)
JP (1) JP2000058878A (enExample)
KR (1) KR100286011B1 (enExample)
TW (1) TW552666B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100328454B1 (ko) 1999-06-29 2002-03-16 박종섭 반도체 소자의 캐패시터 제조 방법
KR100331270B1 (ko) * 1999-07-01 2002-04-06 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR100386447B1 (ko) * 1999-12-23 2003-06-02 주식회사 하이닉스반도체 반도체장치의 커패시터 제조방법
KR100313091B1 (ko) * 1999-12-29 2001-11-07 박종섭 반도체장치의 ＴａＯＮ 게이트절연막 형성방법
KR100321178B1 (ko) * 1999-12-30 2002-03-18 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR20010066386A (ko) * 1999-12-31 2001-07-11 박종섭 플래시 메모리의 게이트전극 제조방법
KR100367404B1 (ko) * 1999-12-31 2003-01-10 주식회사 하이닉스반도체 다층 ＴａＯＮ박막을 갖는 커패시터 제조방법
KR100618683B1 (ko) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100587047B1 (ko) * 2000-06-01 2006-06-07 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100618682B1 (ko) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100639200B1 (ko) * 2000-06-30 2006-10-31 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 제조방법
KR100599440B1 (ko) * 2000-06-30 2006-07-12 주식회사 하이닉스반도체 캐패시터의 제조 방법
US6934262B1 (en) 2000-08-26 2005-08-23 Cisco Technology, Inc. Method and apparatus for restricting the assignment of VLANs
KR100386450B1 (ko) * 2000-12-29 2003-06-02 주식회사 하이닉스반도체 반도체 소자의 커패시터 형성방법
KR100401503B1 (ko) * 2001-04-30 2003-10-17 주식회사 하이닉스반도체 반도체소자의 캐패시터 및 그 제조방법
KR100910220B1 (ko) * 2002-07-12 2009-07-31 주식회사 하이닉스반도체 반도체소자의 유전체박막 제조방법
KR20060072680A (ko) * 2004-12-23 2006-06-28 주식회사 하이닉스반도체 반도체 장치의 커패시터 및 그 제조방법
US20100302707A1 (en) * 2009-05-26 2010-12-02 General Electric Company Composite structures for high energy-density capacitors and other devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263431A (ja) * 1994-03-17 1995-10-13 Sony Corp タンタルを含む高誘電体膜の形成方法
JPH07263442A (ja) * 1994-03-17 1995-10-13 Sony Corp タンタル系高誘電体材料及び高誘電体膜の形成方法並びに半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134013A (ja) * 1984-12-04 1986-06-21 Sanyo Electric Co Ltd 化合物半導体結晶成長法
JP2776826B2 (ja) * 1988-04-15 1998-07-16 株式会社日立製作所 半導体装置およびその製造方法
US5569619A (en) 1992-06-24 1996-10-29 Lg Semicon Co., Ltd. Method for forming a capacitor of a semiconductor memory cell
JP3444013B2 (ja) * 1994-08-10 2003-09-08 日新電機株式会社 強誘電体膜形成方法及び装置
KR0155879B1 (ko) 1995-09-13 1998-12-01 김광호 오산화 이탄탈륨 유전막 커패시터 제조방법
US5876503A (en) * 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
US6075691A (en) * 1997-03-06 2000-06-13 Lucent Technologies Inc. Thin film capacitors and process for making them
US6107155A (en) * 1998-08-07 2000-08-22 Taiwan Semiconductor Manufacturing Company Method for making a more reliable storage capacitor for dynamic random access memory (DRAM)

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263431A (ja) * 1994-03-17 1995-10-13 Sony Corp タンタルを含む高誘電体膜の形成方法
JPH07263442A (ja) * 1994-03-17 1995-10-13 Sony Corp タンタル系高誘電体材料及び高誘電体膜の形成方法並びに半導体装置

Also Published As

Publication number Publication date
US6338995B1 (en) 2002-01-15
JP2000058878A (ja) 2000-02-25
TW552666B (en) 2003-09-11
KR20000013090A (ko) 2000-03-06

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