TW535200B - X-ray reflection mask, method for protecting the mask, x-ray exposure system and method for manufacturing semiconductor device - Google Patents

X-ray reflection mask, method for protecting the mask, x-ray exposure system and method for manufacturing semiconductor device Download PDF

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Publication number
TW535200B
TW535200B TW091103371A TW91103371A TW535200B TW 535200 B TW535200 B TW 535200B TW 091103371 A TW091103371 A TW 091103371A TW 91103371 A TW91103371 A TW 91103371A TW 535200 B TW535200 B TW 535200B
Authority
TW
Taiwan
Prior art keywords
mask
ray
pattern
ray reflection
substrate
Prior art date
Application number
TW091103371A
Other languages
English (en)
Chinese (zh)
Inventor
Katsumi Sugisaki
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of TW535200B publication Critical patent/TW535200B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW091103371A 2001-02-26 2002-02-26 X-ray reflection mask, method for protecting the mask, x-ray exposure system and method for manufacturing semiconductor device TW535200B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001049619A JP2002252162A (ja) 2001-02-26 2001-02-26 Ｘ線反射マスク、その保護方法、ｘ線露光装置及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
TW535200B true TW535200B (en) 2003-06-01

Family

ID=18910696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091103371A TW535200B (en) 2001-02-26 2002-02-26 X-ray reflection mask, method for protecting the mask, x-ray exposure system and method for manufacturing semiconductor device

Country Status (3)

Country Link
JP (1) JP2002252162A (ja)
TW (1) TW535200B (ja)
WO (1) WO2002069379A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417649B (zh) * 2005-12-28 2013-12-01 尼康股份有限公司 十字標記運送裝置、曝光裝置、十字標記運送方法以及十字標記的處理方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004030423A1 (ja) * 2002-09-24 2004-04-08 Nikon Corporation Ｘ線発生装置及び露光装置
JP2005031489A (ja) * 2003-07-08 2005-02-03 Hoya Corp マスクブランクス等の収納容器及びマスクブランクスの収納方法並びにマスクブランクス収納体
KR20050006085A (ko) 2003-07-08 2005-01-15 호야 가부시키가이샤 마스크 블랭크 수납용 컨테이너, 마스크 블랭크 수납방법, 및 마스크 블랭크 패키지
US7145987B2 (en) 2003-07-24 2006-12-05 Nikon Corporation X-ray-generating devices and exposure apparatus comprising same
JP2006093318A (ja) * 2004-09-22 2006-04-06 Tohoku Univ Ｅｕｖ露光装置、ｅｕｖ露光方法及び反射型マスク
JP4667140B2 (ja) 2005-06-30 2011-04-06 キヤノン株式会社 露光装置およびデバイス製造方法
JP5263274B2 (ja) * 2010-11-30 2013-08-14 株式会社ニコン 露光装置及び方法
US10670959B2 (en) 2017-05-10 2020-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle and method of using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05150445A (ja) * 1991-11-29 1993-06-18 Hitachi Ltd 露光用マスク
JPH09320935A (ja) * 1996-05-28 1997-12-12 Canon Inc Ｘ線マスク、該ｘ線マスクを用いたｘ線露光装置、前記ｘ線マスクを用いた半導体デバイスの製造方法、及び前記ｘ線マスクを用いて製造した半導体デバイス
JP3741178B2 (ja) * 1997-07-18 2006-02-01 株式会社ニコン Ｘ線縮小露光装置及びｘ線投影露光方法
JPH1165094A (ja) * 1997-08-22 1999-03-05 Nikon Corp 収納ケース、露光装置及びデバイス製造装置
JP4011687B2 (ja) * 1997-10-01 2007-11-21 キヤノン株式会社 マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417649B (zh) * 2005-12-28 2013-12-01 尼康股份有限公司 十字標記運送裝置、曝光裝置、十字標記運送方法以及十字標記的處理方法

Also Published As

Publication number Publication date
JP2002252162A (ja) 2002-09-06
WO2002069379A1 (fr) 2002-09-06

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