535200 A7535200 A7
五、發明說明（[) [技術嶺域] 本發明，係有關X射線顯微鏡、X射線分析裝置、χ 射線曝光裝置等的X射線光學系統中所使用之X射線反射 光罩及其保護方法。特別是，關於採用χ射線曝光裝置所 使用之X射線反射光罩及其保護方法的X射線曝光裝置、 及元件製造方法。 [習知技術]’ 近年來’隨著半導體積體電路之微細化，爲了提升因 爲光的繞射界限而受限制之光學系統的解像力，開發出一 種取代習知之紫外線，而使用波長較短之X射線的投影微 影技術。該技術所使用之X射線投影曝光裝置，主要係由 χ射線源、照明光學系統、光罩、成像光學系統'晶圓載 台等所構成。 作爲X射線源，係使用以同步加速器(synchrotron)來 加速電子以產生放射光的放射光光源、或雷射等離子(laser plasma)X射線源、Dense Plasm Focous X射線源等。照明 光學系統係由斜入射反射鏡，多層膜反射鏡，以及僅反射 或通過既定波長之X射線的濾波器(filter)等構成，以期望 波長之X射線照射於光罩上。 作爲光罩之形式，一般係有穿透型光罩及反射型光罩 ° X射線用的穿透型光罩，係在由能良好通過χ射線之物 質構成的膜片(membrane、自立膜)上，將吸收X射線之物 質設置成既定形狀而形成圖案者。但，製作實用性的大小 3 本纸張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 535200 A7 __B7 _______ 五、發明說明（Y ) 尺寸之膜片極爲困難。 另一方面，反射型光罩係例如在反射x射線的多層膜 上，形成由反射率較低的部分所構成之圖案者。目前，此 種反射型光罩被認爲較實用。 自形成在反射型光罩上之圖案所反射x射線，係通過 由複數的多層膜反射鏡所構成之投影光學系統’而成像在 塗佈有光阻的晶圓上，並轉印圖案至光阻。又’由於X射 線會大氣吸收而衰減，故該光程係配置在維持於既定真空 度之真空室內。 X射線之波長域，由於不存在透明物質’且物質表面 之反射率亦極低，故通常使用於曝光裝置之透鏡或反射鏡 等之光學元件，無法使用於X射線曝光裝置。因此，X射 線用之光學系統，係由利用完全反射而使由傾斜方向射入 至反射面的X射線進行反射之斜入射反射鏡、或使界面的 反射光之相位一致且依據干涉效應而獲得局反射率的多層 膜之覆膜加工之X射線反射鏡等所構成。 上述之斜入射反射鏡，由於像差較大故在寬廣之視野 中，無法獲得接近繞射界限之解像力。另一方面，多層膜. 反射鏡可使X射線作垂直反射，且能構成具有接近於繞射 界限的解像力之X射線光學系統。因此，軟X射線投影曝 光裝置之投影光學系統（成像光學系統），係完全由多層膜 反射鏡所構成。 作爲如此之多層膜，係於使用由Mo或Si等所構成之 多層膜於X射線反射鏡時，可在Si之L吸收端（12.3nm)的 度適用中國國家標準（CNS)A4規格（210 X 297公釐） 535200 A7 ----------------------------------B7 _ 五、發明說明（〉） -------------；— (請先閱讀背面之注意事項再填寫本頁) 長波長側獲得最高的反射率。但，波長13〜15nm的話， 則無論入射角爲何其反射率均爲70%左右。另一方面，相 較方< Si的l吸收端爲短之波長側，以垂直射入而獲得3〇 以上之反射率的多層膜，則幾乎尙未開發。又，多層膜反 射鏡之基板材料，係使用形狀精度較高，表面粗糙度較小 ’且容易加工之石英、或低熱膨脹玻璃等之玻璃材料。 使用此種波長10〜15nm之X射線的X射線成像光學 系統’係使用在於晶圓上具有7〇〜30nm大小的微細構造 之圖案的製作上。半導體元件之製造，隨著構造的微細化 ’因爲麈埃等造成之缺陷的影響亦變大，而過去不成爲問 題之麈埃大小，亦會成爲問題。例如，將光罩圖案縮小爲 1/4以轉印於晶圓上時，在光罩上大小爲i〇〇nm以下之塵 士矢亦將成爲問題。 -線 作爲光罩上之塵埃對策，亦有使用薄膜(pellicle)之保 護方法。薄膜係指習知使用紫外線之曝光裝置中，用以保 護光罩之薄膜。亦即，自光罩之圖案面相隔既定間隔，以 薄膜來保護圖案面。藉由該薄膜，即使塵埃自光罩周圍侵 入時亦能保護光罩之圖案面，不致於被塵埃污染。又’附 著在薄膜上之塵埃，由於投影光學系統之焦點不合，故不 致轉印至晶圓上。 [發明欲解決之問題] 上述薄膜的光罩保護方法，無法適用於X射線曝光裝 置。此係因爲薄膜幾乎不影響紫外線之透過，而x射線則 5 t、紙張尺度適用由國國家標準（CNS)A4規格（210 X 297公釐） 535200 A7 ^____B7____ 五、發明說明（* ) 被吸收之故。因此，亦提出了一種至x射線曝光之前一刻 ，將薄膜裝著於光罩上，而在曝光中卸下薄膜之可移動薄 膜的保護方法。 但是，因爲X射線曝光裝置係維持在真空中，故由大 氣中移動光罩至真空中時，亦即，在載放(load lock)室（預 備排氣室）中，因爲進行真空排氣與大氣洩放時之壓力差將 會導致薄膜破裂。當薄膜破裂時’碎屑即附著在光罩上， 而對光罩產生不良影響。因此，X射線曝光裝置，並不適 合使用薄膜於光罩的保護。 本發明有鑑於上述問題點’其目的在於提供一能確實 保護X射線反射光罩不受塵埃污染之方法。特別是以提供 具備採用該保護方法的X射線反射光罩之X射線曝光裝置 ，以及使用該X射線曝光裝置、且生產率高之半導體元件 製造方法爲目的。 [解決問題之手段] 爲解決上述問題，本發明之X射線反射光罩，其特徵 在於，具備：形成於基板上的光罩圖案，配置成至少能覆 蓋光罩圖案、保護該光罩圖案不受污染之拆卸自如的護罩 ，以及保持真空或潔淨之置換氣體於護罩與光罩圖案之間 的氣密保持機構。 如前所述，X射線曝光裝置，並不適合使用薄膜來保 護X射線反射光罩不受塵埃污染。使用護罩來保護X射線 反射光罩之圖案面，並藉由將真空或潔淨之置換氣體充塡 6 (請先閱讀背面之注意事項再填寫本頁) 訂. -線 木纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 535200 A7 ^____B7__ 五、發明說明（< ) 於該護罩與基板之間的空間，即能防止在載放室中，因真 空排氣及大氣洩放時的壓力差而導致護罩之破損。 本發明中，前述氣密保持機構，以藉由0形環來將前 述護罩與前述基板保持成氣密之狀態爲佳。此外，前述氣 密保持機構亦可藉由0形環來將載置前述基板的載台及前 述護罩保持成氣密之狀態。俾能確實地將護罩與基板或載 置基板的載台保持成氣密之狀態。 本發明之X射線反射光罩保護方法，係保護X射線反 射光罩的光罩圖案不受污染，其特徵在於：準備具備有形 成於基板上的光罩圖案，及配置成至少能覆蓋光罩圖案、 保護該光罩圖案不受污染之拆卸自如的護罩，以及保持真 空或潔淨之置換氣體於該護罩與光罩圖案之間的氣密保持 機構的X射線反射光罩；在搬送、保管該X射線反射光罩 之步驟，係以覆蓋光罩圖案之方式安裝護罩，將該護罩與 光罩圖案之間以真空或潔淨之置換氣體保持成潔淨之狀態 ;在X射線之曝光步驟，係將卸下前述護罩的X射線反射 光罩設置於曝光裝置來曝光。 如前所述’由於在裝著護罩的狀態下無法進行X射線 之曝光，因此在曝光時卸下護罩。由於曝光係在真空環境 氣氛中進行，因此即使卸下護罩，塵埃附著在光罩上之可 能性亦極低。又，曝光以外之搬送或保管之際，藉由護罩 之裝著，能防止在大氣中塵埃附著之情形。因此，元件製 造步驟之所有步驟中，皆能保護圖案面不受污染。 本發明之X射線曝光裝置，具有產生X射線的X射線 ________ 7 本紙張尺度適用中國國家標準（CNS)A4規格297公ϋ (請先閱讀背面之注意事項再填寫本頁) —Aw 訂- 丨線 535200 A7 ______ B7__ 五、發明說明（^ ) 光源；將來自該X射線光源之X射線導引至X射線反射光 罩的照明光學系統，以及將來自該X射線反射光罩之X射 線導引至感光性基板的投影光學系統，據以將前述X射線 反射光罩之圖案轉印至感光性基板，其特徵在於：具備將 X射線反射光罩設置於裝置時，用以自該X射線光罩卸下 護罩的機構；該X射線反射光罩，具有基板上的光罩圖_ ，以及配置成至少能覆蓋光罩圖案、保護該光罩圖案不_ 污染之拆卸自如的護罩。 藉由在X射線曝光裝置中設置曝光時拆卸護罩的機牛轉 ，即能使用保持在潔淨狀態下的光罩來進行X射線曝光。 本發明之半導體元件製造方法，其特徵在於，包含： 準備X射線反射光罩的步驟，該X射線反射光罩具有形_ 於基板上的光罩圖案，配置成至少能覆蓋光罩圖案、保_ 該光罩圖案不受污染的護罩，以及保持真空或潔淨之置換 氣體於該護罩與光罩圖案之間的氣密保持機構；自前述x 射線反射光罩卸下護罩，將X射線反射光罩設置於X射敏 曝光裝置的步驟；以及藉由使用該X射線曝光裝置，將χ 射線反射光罩之光罩圖案轉印於塗佈在晶圓上之光阻的歩 驟。 」 元件製造步驟之全步驟中，皆能防止塵埃附著至圖_ 面上。又’在真空中卸下護罩之際，由於護罩與光罩之_ 的空間係真空或充塡有潔淨之置換氣體，因此不致因氣顧 差而使護罩有破損之虞。以此方式，即能提供一種藉確^ 防止塵埃附著於光罩，不致降低生產率的半導體元件製遊 8 本玳張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱1 " 一 (請先閱讀背面之注意事項再填寫本頁) --------訂---------%1* 535200 A7 _B7___ 五、發明說明（q ) 方法。 [圖式之簡單說明] 圖1，係顯示本發明實施形態之X射線反射光罩之構 造的截面圖。 圖2，係顯示搭載圖1之X射線反射光罩之X射線曝 光裝置之全體構成的圖。 圖3，‘係顯示本發明其他實施形態之X射線反射光罩 之構造的截面圖。 圖4，係顯示半導體元件之一製造方法例的流程圖。 圖5，係應以說明微影步驟的流程圖。 [元件符號說明] 1 X射線曝光裝置 3 光源監視用感測器 5 成像透鏡 7 等離子焦點光源 9, 15 處理室 11 旋轉拋物面反射鏡 13 X射線穿透濾波器 17 照明光學系統 19 X射線反射鏡 21 光程折射反射鏡 23 反射型光罩 9 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂------- ——線」 535200 A7 _B7 五、發明說明（〖） 25 光罩載台 27 投影光學系統 29 晶圓 31 晶圓載台 33 ~ 曝光處理室 35 閘閥 37 預備排氣室(載放室) 39 真空泵 41，65 基板 43, 73 護罩 45, 75 0型環 47, 67 反射膜 49 邊緣 51 空間 53 支持部 71 台座 (請先閱讀背面之注意事項再填寫本頁) · —線 [發明之實施形態] 以下，參閱圖式進行說明。 圖1係顯示本發明實施形態之X射線反射光罩之構造 的截面圖。 圖2係線示搭截圖1之X射線反射光罩之X射線曝光 裝置之全體構成的圖。 首先，參閱圖2說明X射線曝光裝置之槪要。 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公 535200 A7 ___B7 _ 五、發明說明（1 ) fe X射線曝光裝置，係使用波長13mn附近的軟X射 線領域之光(以下，稱EUV光）來作爲曝光用之照明用光， 以步進掃描（Step and scan)方式進行曝光動作的投影曝光裝 置。 等離子焦點光源7，能以良好的效率產生波長13nm附 近之X射線。圖中之符號3，係光源監視用感測器，符號 7係成像透鏡。 由於EUV光對大氣之穿透率較低，因此其光程係被處 理室（真空室)9包覆以遮斷外氣。又，由於會自等離子焦點 光源7產生碎屑（debris)，故處理室9必須與其他處理室分 別配置。 在等離子焦點光源7之上部，配置有覆蓋Mo/Si多 層膜之旋轉拋物面反射鏡11。自等離子焦點光源7輻射之 X射線，射入拋物面反射鏡11 ’僅有波長13nm附近之X 射線朝向曝光裝置1的下方平行反射。 在旋轉拋物面反射鏡11下方，配置有由厚度O.^nm 之Zr(锆)所構成之可視光遮斷X射線穿透濾波器13。被抛 物面反射鏡Η反射之X射線內，僅有期望之的X 射線能通過穿透濾波器13 °穿透濾波器13附近’被處理 室15包覆，以遮斷外氣。 在穿透濾波器13之下方，設有曝光處理室33。在曝 光處理室33內之穿透濾波器13的下方，配置有照明光學 系統17。照明光學系統17 ’係由聚光系統之反射鏡、複眼 光學系統之反射鏡等所構成’且將由穿透濾波器13輸入之 11 •木纸張尺度適用中國國家標準（CN⑴八^現格（210 x 297公釐）— 〜 (請先閱讀背面之注咅？事項再填寫本頁) .0--------訂---------線」 535200 A7 ____B7__________ 五、發明說明（1 ° ) X射線予以整形成圓弧狀，朝圖式左方進行照射。 在照明光學系統π之圖式左方，配置有X射線反射 鏡19。X射線反射鏡19，係圖式右側反射面19a爲凹型之 圓形旋轉拋物圓鏡，藉保持構件保持成垂直。X射線反射 鏡19，係由反射面19a爲高精密加工之石英基板所構成。 於反射面19a，形成有波長13nm之X射線的反射率高的 M0與Si之多層膜。又，在使用波長10〜15nm之X射線 時，亦可組合Ra(釕）、Rh(鍺)等物質與Si、Be(鈹）、B4C(4 氟化碳)等物質之多層膜。 X射線反射鏡19之圖式右方，傾斜地配置有光程折射 反射鏡21。光程折射反射鏡21之上方，反射型光罩23係 以反射面在下配置成水平。自照明光學系統17射出之X 射線，在藉由X射線反射鏡19予以反射聚光後，透過光 程折射反射鏡21到達反射型光罩23的反射面。 反射型光罩23之反射面，亦形成有由多層膜所構成之 反射膜。於該反射膜，形成有對應轉印至晶圓29之圖案的 光罩圖案。反射型光罩23，係固定在圖示於其上部之光罩 載台25。光罩載台25，至少可移動於γ方向，使光程折 射反射鏡21所反射之X射線依次照射在光罩23上。反射 型光罩23之詳細構造，係如後述。 反射型光罩23之下部，依序配置有投影光學系統27 、晶圓29。投影光學系統27，係由複數的反射鏡等構成， 將反射型光罩23所反射之X射線縮小成既定之縮小倍率( 例如1/4)，並成像於晶圓29上。晶圓29係藉由吸附等 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ·· 訂---------線丨▲ 535200 A7 ______B7_ 五、發明說明（U ) 方式；固定在可朝XYZ方向移動之晶圓載台31上。 (請先閱讀背面之注意事項再填寫本頁) 曝光處理室33中，介由閘閥35設有預備排氣室37( 載放室）。預備排氣室37，連接有真空泵39，並藉由真空 泵39之運轉，將預備排氣室37排氣成真空。 進行曝光動作之際，係藉由照明光學系統17而照射 EUV光至反射型光罩23之反射面。此時，對於投影光學 系統27而以依照投影光學系統的縮小倍率所定之既定速度 比相對地同步掃描反射型光罩23及晶圓29。據此，即能 以步進掃描方式，將所有反射型光罩23的電路圖案轉印至 晶圓29上之複數個曝光照射領域。又，晶圓29之晶片， 係例如25 X 25mm之方形，能在光阻上曝光0.07pmL/S 之1C圖案。 其次，參閱圖1說明本發明之實施形態的反射型光罩 之構造。 反射型光罩23，係由基板41、護罩43、以及〇形環 45所構成。 基板41，例如係由石英玻璃製造，其上面形成有由 Mo/Si多層膜所構成之反射膜47，以反射波長爲13nm的 X射線。反射膜47上，由W所構成之吸收體，係被圖案 化成對應轉印至晶圓29之圖案的光罩圖案。 護罩43，例如係以具有透明且均一特性的玻璃所製作 。沿護罩43之外圍，形成有既定高度之邊緣49。該邊緣 49下面，形成有溝槽49a，Ο形環45即係嵌入該溝槽49a 。護罩43與基板41係藉由〇形環45保持成氣密。邊緣 -瓠·. 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 13 __ 535200 A7 ___ B7_ 五、發明說明（丨V) 49之端面(密接面），係位於基板41上反射膜47(圖案面)外 側之空白部分。又，護罩43之厚度，係基板41與護罩43 之間的空間51排氣成真空狀態時，具有護罩43不致破損 程度之強度的厚度。此外，護罩43之內面與基板41上之 圖案面的間隔，例如1 mm程度。 又，沿護罩43之外圍，設有延伸至外側方向之支持部 53。該支持部53，係如後述般使用於拆卸護罩43時。 將空間51保持於真空時，首先，係將圖案化之基板 41與嵌入Ο形環45之護罩43置於真空處理室內，進行真 空處理室之真空排氣動作。接著，將安裝有0形環45之 護罩43覆蓋於基板41上，當兩者密接後，空間51即成真 空狀態。在此狀態下，洩放真空處理室以回復至大氣壓。 基板41與護罩43之接觸面，由於係以〇形環45作氣密 性地密接，故藉由空間51與外界之氣壓差而使空間51保 持在真空狀態。 充塡置換氣體至空間51時，係將圖案化之基板41與 嵌入0形環45之護罩43置於真空處理室內，進行真空處 理室之真空排氣動作。之後，導入潔淨的置換氣體(稀有氣 體、仏等)至真空處理室。接著，將嵌入〇形環45之護罩 43覆蓋於基板41上，使兩者密接。此時，使真空處理室 內之置換氣體的壓力略小於大氣壓。接著，洩放真空處理 室內之氣體後，藉與外界之壓力差而使空間51保持在充塡 著置換氣體之狀態。 如前所述，由於空間51係被保持於真空狀態或充塡置 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂· —線 535200 A7 B7 五、發明說明（Ο 換氣體之狀態，因此在該狀態下進行反射型光罩23之搬送 或保管之際，塵埃等不致侵入、或附著於基板41上。又， 若以可視光或紫外線的雷射掃描或顯微鏡觀察進行缺陷檢 查時，護罩43以透明的形態較爲理想。如此，上述光線較 易穿透護罩43 ’不致對檢查產生不理想之情形。通常，缺 陷檢查係於每至交換光罩時進行。 接著’說明使用該反射型光罩23的X射線曝光裝置 ，進行曝光之步驟。 反射型光罩23之圖案面保持在真空狀態時，係在安裝 護罩43的狀態下將該反射型光罩23搬送至X射線曝光裝 置1的預備排氣室37內。此時，閘閥35係關閉，預備排 氣室37與曝光處理室33呈隔離狀態。運轉真空泵39並於 預備排氣室37排氣成真空之後，自預備排氣室37移動反 射光罩23至曝光處理室33，搭載於光罩載台25上。接著 ’在進行曝光時，係遠距操作未圖示之機器手臂以使用支 持部53卸下護罩43。此外，亦可將護罩43置於下方來進 行排氣，於卸下護罩43後，僅將反射光罩23搭載於光罩 載台25上。 如此’在進行搬送時，藉護罩43來保護基板41上之 反射膜47面（圖案面），於曝光時，即使卸下護罩43，亦由 於爲曝光裝置1內呈真空狀態，故不致產生圖案面附著塵 埃等之情形。又，由於曝光動作係卸下護罩43後進行，故 X射線不致被護罩43吸收，能以良好的效率進行圖案轉印 (請先閱讀背面之注意事項再填寫本頁) ·· 訂---------線—爲5. Description of the invention ([) [Technical Range] The present invention relates to an X-ray reflection mask used in an X-ray optical system such as an X-ray microscope, an X-ray analysis device, an X-ray exposure device, and a method for protecting the same. In particular, the present invention relates to an X-ray exposure apparatus using an X-ray reflection mask used in an X-ray exposure apparatus and a protection method thereof, and a method for manufacturing an element. [Known Technology] In recent years, with the miniaturization of semiconductor integrated circuits, in order to improve the resolution of optical systems that are restricted by the diffraction limit of light, a new type of ultraviolet light has been developed that replaces the conventional ultraviolet light and uses a shorter wavelength. X-ray projection lithography. The X-ray projection exposure device used in this technology is mainly composed of a X-ray source, an illumination optical system, a photomask, an imaging optical system, a wafer stage, and the like. As the X-ray source, a radiation light source that accelerates electrons with a synchrotron to generate radiant light, a laser plasma X-ray source, a Dense Plasm Focous X-ray source, and the like are used. The illumination optical system consists of an oblique incidence mirror, a multilayer film mirror, and a filter that reflects or passes only X-rays of a predetermined wavelength, and irradiates the mask with X-rays of a desired wavelength. As the form of the photomask, a transmissive photomask and a reflective photomask are generally used. The transmissive photomask for X-rays is a film (membrane, self-supporting film) made of a substance that can pass X-rays. On the other hand, an X-ray absorbing substance is set in a predetermined shape to form a pattern. However, it is extremely difficult to make a practical size 3 paper size that conforms to the Chinese National Standard (CNS) A4 specification (210 χ 297 mm) 535200 A7 __B7 _______ 5. Description of the invention (Y) size diaphragm. On the other hand, a reflective mask is a pattern in which, for example, an X-ray-reflecting multilayer film is formed with a portion having a low reflectance. Currently, such a reflective mask is considered to be more practical. The x-rays reflected from the pattern formed on the reflective mask are imaged on a wafer coated with photoresist through a projection optical system composed of a plurality of multilayer film mirrors, and the pattern is transferred to light Resistance. Since X-rays are absorbed by the atmosphere and attenuated, the optical path is arranged in a vacuum chamber maintained at a predetermined vacuum degree. The wavelength range of X-rays, because there is no transparent substance 'and the reflectance of the surface of the substance is extremely low. Therefore, optical elements such as lenses or mirrors used in exposure devices cannot be used in X-ray exposure devices. Therefore, the optical system for X-rays is obtained by obliquely-incident mirrors that reflect X-rays that are incident on the reflecting surface from an oblique direction by using full reflection, or the phase of the reflected light at the interface is consistent and obtained by interference It is composed of an X-ray mirror and the like that are processed by a multilayer film with a local reflectance. The above-mentioned oblique incidence mirror cannot obtain a resolution close to the diffraction limit in a wide field of view due to the large aberration. On the other hand, multilayer films. Mirrors allow X-rays to reflect vertically and form an X-ray optical system with a resolution close to the diffraction limit. Therefore, the projection optical system (imaging optical system) of the soft X-ray projection exposure device is entirely composed of a multilayer film reflector. As such a multilayer film, when a multilayer film composed of Mo or Si is used in an X-ray mirror, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 535200 A7 ---------------------------------- B7 _ 5. Description of the invention (>) -------------;-(Please read the precautions on the back before filling this page) The longest wavelength side obtains the highest reflectance. However, at a wavelength of 13 to 15 nm, the reflectance is about 70% regardless of the incident angle. On the other hand, compared with the multi-layered film of which the absorption end of < Si has a short wavelength side and obtains a reflectance of 30 or more by perpendicular incidence, it is almost undeveloped. In addition, as the substrate material of the multilayer film reflector, a glass material such as quartz or low thermal expansion glass, which has high shape accuracy, small surface roughness, and is easy to process, is used. An X-ray imaging optical system using such X-rays having a wavelength of 10 to 15 nm is used for producing a pattern having a fine structure having a size of 70 to 30 nm on a wafer. With the miniaturization of the structure of semiconductor devices, the effect of defects caused by angstroms and the like also becomes larger, and the size of angstroms that have not been a problem in the past also becomes a problem. For example, when the mask pattern is reduced to 1/4 to be transferred onto a wafer, dust particles with a size of 100 nm or less on the mask will also become a problem. -Line As a countermeasure against dust on the mask, there is also a protection method using a pellicle. The film refers to a film for protecting a photomask in an exposure apparatus which is conventionally used with ultraviolet rays. That is, the pattern surfaces of the photomask are separated from each other by a predetermined interval, and the pattern surfaces are protected by a film. With this film, even if dust invades from around the mask, the pattern surface of the mask can be protected from being contaminated by dust. Also, the dust attached to the film is not transferred to the wafer because the focal point of the projection optical system is not the same. [Problems to be Solved by the Invention] The above-mentioned method for protecting a photomask cannot be applied to an X-ray exposure apparatus. This is because the film hardly affects the transmission of ultraviolet rays, and the x-ray is 5 t, and the paper size is applicable by the national standard (CNS) A4 specification (210 X 297 mm) 535200 A7 ^ ____ B7____ 5. Description of the invention (*) is absorbed The reason. Therefore, a method of protecting a movable film by attaching the film to a photomask before the x-ray exposure and removing the film during the exposure is also proposed. However, because the X-ray exposure apparatus is maintained in a vacuum, when the photomask is moved from the atmosphere to the vacuum, that is, in the load lock chamber (preliminary exhaust chamber), the vacuum exhaust and the The pressure difference when the atmosphere is vented will cause the film to rupture. When the film breaks, the debris is attached to the photomask, which adversely affects the photomask. Therefore, the X-ray exposure device is not suitable for the protection of a mask using a film. The present invention has been made in view of the above problems, and its object is to provide a method capable of reliably protecting the X-ray reflection mask from dust. In particular, it is an object to provide an X-ray exposure apparatus provided with an X-ray reflection mask employing the protection method, and a method of manufacturing a semiconductor device using the X-ray exposure apparatus with high productivity. [Means for Solving the Problems] In order to solve the above-mentioned problems, the X-ray reflection mask of the present invention includes a mask pattern formed on a substrate, and is arranged to cover at least the mask pattern and protect the mask pattern Contaminated shields that can be easily disassembled, and an airtight holding mechanism that maintains a vacuum or clean displacement gas between the shield and the mask pattern. As mentioned earlier, the X-ray exposure device is not suitable for using a film to protect the X-ray reflection mask from dust. Use a shield to protect the pattern surface of the X-ray reflection mask, and fill it with a vacuum or a clean replacement gas. 6 (Please read the precautions on the back before filling this page). National Standard (CNS) A4 specification (210 X 297 mm) 535200 A7 ^ ____ B7__ 5. Description of the invention (<) The space between the shield and the substrate can be prevented from being exhausted by vacuum in the loading chamber And the pressure difference when the atmosphere is released causes the shield to be damaged. In the present invention, it is preferable that the airtight holding mechanism maintains the cover and the substrate in an airtight state by an O-ring. In addition, the airtight holding mechanism may maintain the stage on which the substrate is placed and the shroud in an airtight state by a 0-ring.俾 The cover and the substrate or the stage on which the substrate is placed can be reliably kept airtight. The X-ray reflection mask protection method of the present invention is to protect the mask pattern of the X-ray reflection mask from contamination. It is characterized by preparing a mask pattern formed on a substrate and arranging the mask pattern to cover at least the mask. X-ray reflection mask of the airtight holding mechanism between the mask and the mask pattern, which can be disassembled freely to protect the mask pattern from contamination, and to maintain a vacuum or clean replacement gas between the mask and the pattern The step of storing the X-ray reflection mask is to install a shield in a manner to cover the mask pattern, and maintain a clean state between the mask and the mask pattern with a vacuum or a clean replacement gas; in the X-ray exposure In the step, the X-ray reflection mask with the aforementioned shield removed is set in an exposure device for exposure. As described above, since the X-ray exposure cannot be performed with the shield attached, the shield is removed during the exposure. Since the exposure is performed in a vacuum atmosphere, the possibility of dust attaching to the mask is extremely low even if the shield is removed. In addition, during transportation or storage other than exposure, the cover can prevent the dust from adhering to the atmosphere. Therefore, the pattern surface can be protected from contamination in all steps of the component manufacturing step. The X-ray exposure device of the present invention has X-rays that generate X-rays. ________ 7 This paper size is applicable to the Chinese National Standard (CNS) A4 specification 297 g. (Please read the precautions on the back before filling this page) —Aw order-丨 Line 535200 A7 ______ B7__ 5. Description of the invention (^) Light source; illumination optical system that guides X-rays from the X-ray light source to the X-ray reflection mask, and guides X-rays from the X-ray reflection mask The projection optical system introduced to the photosensitive substrate is used to transfer the pattern of the X-ray reflection mask to the photosensitive substrate, and is characterized in that when the X-ray reflection mask is installed on the device, Mechanism for removing mask from photomask; The X-ray reflection photomask has a photomask on the substrate, and a freely removable cover configured to cover at least the photomask pattern and protect the photomask pattern from pollution. The X-ray exposure can be performed by using a photomask that is kept in a clean state by setting up a robot to remove the cover during exposure in the X-ray exposure device. The method for manufacturing a semiconductor device according to the present invention includes: a step of preparing an X-ray reflection mask, the X-ray reflection mask having a mask pattern formed on a substrate, and configured to cover at least the mask pattern, _ The mask with the mask pattern uncontaminated, and an airtight holding mechanism that maintains a vacuum or clean replacement gas between the mask and the mask pattern; remove the mask from the aforementioned x-ray reflection mask, and place the X A step of setting the X-ray reflection mask on the X-ray-sensitive exposure device; and using the X-ray exposure device to transfer the mask pattern of the X-ray reflection mask to a photoresist coated on the wafer. ”During all steps of the component manufacturing process, dust can be prevented from adhering to the surface. Also, when the shield is removed in a vacuum, the space between the shield and the mask is vacuum or filled with clean replacement gas, so the shield may not be damaged due to poor air quality. In this way, it is possible to provide a semiconductor device manufacturing process that prevents dust from adhering to the photomask and does not reduce productivity. 8 This sheet size applies the Chinese National Standard (CNS) A4 specification (210 X 297 Public Love 1 " (Please read the notes on the back before filling this page) -------- Order ---------% 1 * 535200 A7 _B7___ V. Method of Invention (q). [图 之 之Brief Description] Fig. 1 is a cross-sectional view showing the structure of an X-ray reflection mask according to an embodiment of the present invention. Fig. 2 is a diagram showing the overall configuration of an X-ray exposure apparatus equipped with the X-ray reflection mask of Fig. 1. 3 'is a cross-sectional view showing the structure of an X-ray reflection mask according to another embodiment of the present invention. FIG. 4 is a flowchart showing an example of a method for manufacturing a semiconductor device. FIG. 5 is a flowchart illustrating a lithography step. [Description of component symbols] 1 X-ray exposure device 3 Light source monitoring sensor 5 Imaging lens 7 Plasma focus light source 9, 15 Processing chamber 11 Rotating parabolic mirror 13 X-ray transmission filter 17 Illumination optical system 19 X-ray Reflector 21 optical path refracted reflection 23 Reflective Photomask 9 This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Order ------- ---- Line ”535200 A7 _B7 V. Explanation of the invention (〖) 25 Mask stage 27 Projection optical system 29 Wafer 31 Wafer stage 33 ~ Exposure processing chamber 35 Gate valve 37 Pre-exhaust chamber (loading chamber) 39 Vacuum pump 41, 65 Substrate 43, 73 Shroud 45, 75 0-ring 47, 67 Reflective film 49 Edge 51 Space 53 Support section 71 Stand (please read the precautions on the back before filling out this page) ·-Line [Inventive Embodiment] Below, refer to The drawings are for explanation. Fig. 1 is a cross-sectional view showing the structure of an X-ray reflection mask according to an embodiment of the present invention. Fig. 2 is a diagram showing the overall configuration of an X-ray exposure apparatus using the X-ray reflection mask of Screenshot 1. First, the main points of the X-ray exposure device will be explained with reference to Fig. 2. 10 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male 535200 A7 ___B7 _ V. Description of the invention (1) fe X-ray exposure device, system Use wavelength near 13mn The light in the X-ray field (hereinafter referred to as EUV light) is used as illumination light for exposure, and is a projection exposure device that performs an exposure operation in a step and scan method. The plasma focus light source 7 can be generated with good efficiency. X-rays with a wavelength of around 13nm. Reference numeral 3 in the figure is a light source monitoring sensor, and reference numeral 7 is an imaging lens. Because EUV light has a low permeability to the atmosphere, its optical path is covered by a processing chamber (vacuum chamber) 9 to block outside air. In addition, since debris is generated from the plasma focus light source 7, the processing chamber 9 must be disposed separately from other processing chambers. Above the plasma focus light source 7, a rotating parabolic mirror 11 covering a Mo / Si multilayer film is arranged. X-rays radiated from the plasma focus light source 7 are incident on the parabolic mirror 11 ', and only X-rays having a wavelength of around 13 nm are reflected in parallel toward the lower side of the exposure device 1. Below the rotating parabolic mirror 11, a visible light blocking X-ray transmission filter 13 made of Zr (zirconium) having a thickness of 0.1 nm is arranged. Of the X-rays reflected by the parabolic mirror 仅有, only the desired X-rays can pass through the transmission filter 13 ° near the transmission filter 13 'and be covered by the processing chamber 15 to block the outside air. Below the transmission filter 13, an exposure processing chamber 33 is provided. Below the transmission filter 13 in the exposure processing chamber 33, an illumination optical system 17 is arranged. Illumination optical system 17 'It is composed of the reflector of the condenser system and the reflector of the compound-eye optical system' and it will be input 11 by the transmission filter 13 • The paper size of the wood applies to Chinese national standards (CN⑴ 八 ^ 格格 ( 210 x 297 mm) — ~ (Please read the note on the back? Matters before filling out this page) .0 -------- Order --------- line "535200 A7 ____B7__________ V. Description of the invention (1 °) X-rays are formed into a circular arc shape and irradiated to the left of the figure. On the left of the figure of the illumination optical system π, an X-ray mirror 19 is arranged. The X-ray mirror 19 is a drawing The right-side reflecting surface 19a is a concave circular parabolic circular mirror, which is held vertically by a holding member. The X-ray reflecting mirror 19 is composed of a reflecting substrate 19a made of a high-precision quartz substrate. The reflecting surface 19a is formed with Multilayer film of M0 and Si with high reflectance of X-rays with a wavelength of 13nm. When using X-rays with a wavelength of 10 to 15nm, it is possible to combine substances such as Ra (ruthenium) and Rh (germanium) with Si and Be (beryllium ), B4C (4 Fluorocarbon) and other multilayer films. The X-ray reflector 19 is arranged on the right side of the diagram, and it is arranged obliquely There is an optical path refraction mirror 21. Above the optical path refraction mirror 21, a reflective mask 23 is arranged horizontally with a reflecting surface below. The X-rays emitted from the illumination optical system 17 are provided by an X-ray mirror 19 After reflecting and condensing, the light path refracting mirror 21 reaches the reflection surface of the reflection mask 23. The reflection surface of the reflection mask 23 is also formed with a reflection film composed of a multilayer film. On the reflection film, there is formed A mask pattern corresponding to the pattern transferred to the wafer 29. The reflective mask 23 is fixed to the mask stage 25 shown in the upper portion thereof. The mask stage 25 can be moved at least in the γ direction to make light The X-rays reflected by the distance refracting mirror 21 are sequentially irradiated on the photomask 23. The detailed structure of the reflective photomask 23 is described later. The lower part of the reflective photomask 23 is sequentially provided with a projection optical system 27 and a wafer. 29. The projection optical system 27 is composed of a plurality of mirrors and the like, and reduces the X-rays reflected by the reflective mask 23 to a predetermined reduction magnification (for example, 1/4) and images the wafer 29. The wafer 29 series by adsorption, etc. 12 paper sizes are applicable to China Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling in this page) ·· Order --------- line 丨 ▲ 535200 A7 ______B7_ V. Description of the invention (U ) Method; fixed on the wafer stage 31 that can be moved in the XYZ direction. (Please read the precautions on the back before filling out this page) In the exposure processing chamber 33, a pre-exhaust chamber 37 (loading) is provided through the gate valve 35 Chamber). The pre-exhaust chamber 37 is connected to a vacuum pump 39, and the pre-exhaust chamber 37 is evacuated to a vacuum by the operation of the vacuum pump 39. When the exposure operation is performed, the illumination optical system 17 is used to irradiate the EUV light onto the reflection surface of the reflection mask 23. At this time, the reflection optical mask 23 and the wafer 29 are relatively scanned synchronously with the projection optical system 27 at a predetermined speed ratio determined in accordance with the reduction ratio of the projection optical system. Accordingly, the circuit patterns of all the reflective masks 23 can be transferred to a plurality of exposure irradiation areas on the wafer 29 in a step-and-scan manner. In addition, the wafer of wafer 29 is, for example, a 25 × 25mm square, and can expose a 1C pattern of 0.07 pmL / S on a photoresist. Next, the structure of a reflective mask according to an embodiment of the present invention will be described with reference to FIG. The reflective mask 23 is composed of a substrate 41, a shield 43, and an O-ring 45. The substrate 41 is made of, for example, quartz glass, and a reflective film 47 made of a Mo / Si multilayer film is formed on the substrate 41 to reflect X-rays having a wavelength of 13 nm. On the reflective film 47, an absorber made of W is patterned into a mask pattern corresponding to the pattern transferred to the wafer 29. The shield 43 is made of, for example, glass having transparent and uniform characteristics. A rim 49 having a predetermined height is formed along the periphery of the shield 43. Below the edge 49, a groove 49a is formed, and the O-ring 45 is embedded in the groove 49a. The shield 43 and the substrate 41 are kept airtight by an O-ring 45. Edge- 瓠 ·. This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 13 __535200 A7 ___ B7_ V. Description of the invention (丨 V) 49 The end surface (close surface) is located on the substrate 41 A blank portion outside the upper reflection film 47 (pattern surface). The thickness of the shroud 43 is such that the space 51 between the substrate 41 and the shroud 43 has a strength such that the shroud 43 is not damaged when the space 51 is evacuated to a vacuum state. The distance between the inner surface of the shield 43 and the pattern surface on the substrate 41 is, for example, about 1 mm. A support portion 53 is provided along the periphery of the shroud 43 and extends outward. This support part 53 is used when removing the cover 43 as mentioned later. When the space 51 is kept under vacuum, first, the patterned substrate 41 and the shield 43 embedded with the O-ring 45 are placed in a vacuum processing chamber to perform a vacuum exhaust operation of the vacuum processing chamber. Next, the cover 43 on which the O-ring 45 is mounted is covered on the substrate 41. When the two are tightly connected, the space 51 becomes a vacuum state. In this state, the vacuum processing chamber is vented to return to atmospheric pressure. The contact surface between the substrate 41 and the shield 43 is hermetically sealed by the o-ring 45, so the space 51 is kept in a vacuum state by the air pressure difference between the space 51 and the outside. When the replacement gas is filled into the space 51, the patterned substrate 41 and the shield 43 embedded in the O-ring 45 are placed in a vacuum processing chamber to perform a vacuum exhaust operation of the vacuum processing chamber. After that, a clean replacement gas (rare gas, krypton, etc.) is introduced into the vacuum processing chamber. Next, a cover 43 fitted with the O-ring 45 is covered on the substrate 41 so that the two are in close contact. At this time, the pressure of the replacement gas in the vacuum processing chamber is made slightly smaller than the atmospheric pressure. Then, after the gas in the vacuum processing chamber is vented, the space 51 is maintained in a state filled with the replacement gas by a pressure difference from the outside. As mentioned above, because the space 51 is kept in a vacuum or filled with 14 paper sizes, the Chinese National Standard (CNS) A4 (210 X 297 mm) is applicable. (Please read the precautions on the back before filling this page ) Order · —line 535200 A7 B7 V. Description of the invention (0) The state of gas exchange, so when the reflective mask 23 is transported or stored in this state, dust and the like will not enter or attach to the substrate 41. If the defect inspection is performed by visible light or ultraviolet laser scanning or microscope observation, the shield 43 is preferably in a transparent form. In this way, the light is more likely to penetrate the shield 43 'so as not to cause an undesirable situation in the inspection. In general, the defect inspection is performed every time the mask is exchanged. Next, the procedure of performing exposure using the X-ray exposure device using the reflective mask 23 will be described. When the pattern surface of the reflective mask 23 is kept in a vacuum state, The reflective mask 23 is transferred to the preliminary exhaust chamber 37 of the X-ray exposure apparatus 1 with the shield 43 installed. At this time, the gate valve 35 is closed, and the preliminary exhaust chamber 37 and the exposure processing chamber 33 are closed. Isolated state. After the vacuum pump 39 is operated and the pre-exhaust chamber 37 is exhausted to a vacuum, the reflective mask 23 is moved from the pre-exhaust chamber 37 to the exposure processing chamber 33 and mounted on the mask stage 25. Then, 'exposure is being performed' At this time, the robot arm (not shown) is operated remotely to remove the shield 43 using the support portion 53. In addition, the shield 43 can also be placed below to exhaust the air. After removing the shield 43, only the reflection The photomask 23 is mounted on the photomask stage 25. In this way, the surface of the reflective film 47 (pattern surface) on the substrate 41 is protected by the photomask 43 during transportation, and even when the photomask 43 is removed during exposure, Due to the vacuum state in the exposure device 1, there is no possibility that dust and the like adhere to the pattern surface. The exposure operation is performed after the cover 43 is removed, so that X-rays are not absorbed by the cover 43 and can be used with good efficiency. Transfer the pattern (please read the precautions on the back before filling this page)
535200 A7 _____ B7___ 五、發明說明（以） 以置換氣體充塡空間51時，係將反射光罩23搬送至 預備排氣室37內。此時，閘閥35係關閉，預備排氣室37 與曝光處理室33呈隔離狀態。接著’在運轉真空泵39之 後，暫時使預備排氣室37內的壓力與空間51內的置換氣 體之壓力爲相同程度，卸下護罩43。之後，進一步運轉真 空泵39，將預備排氣室37排氣成真空，進行上述之操作 〇 曝光結束後，自曝光裝置取出反射光罩23時’係以機 器手臂等將護罩43覆蓋於光罩載台25上之反射光罩23的 基板41上，並使兩者成密接狀態。在該狀態下，將反射光 罩23自曝光處理室33移動至預備排氣37。之後，關閉閘 閥35，隔離預備排氣室37與曝光處理室33，且洩放預備 排氣室37自曝光裝置1取出反射光罩23。此時，空間51 仍保持在真空狀態。 又，以置換氣體充塡空間51時，首先，係將反射光罩 23的基板41、護罩43及Ο形環45移動至預備排氣空37 。接著，關閉閘閥35，隔離預備排氣室37與曝光處理室 33 ’再以置換氣體充塡預備排氣室37。然後，將嵌有〇形 環45之護罩43覆蓋於基板41上，使兩者呈密接狀態。此 時’基板與護罩間之空間，係充塡置換氣體。接著，洩放 預備排氣室37內之氣體並取出反射光罩23。取出之反射 光罩23 ’係以該狀態加以保管。 ® 3，係顯示本發明其他形態之反射光罩構造的截面 圖。 16 本紙張尺度適用中國國家標準（CNS)A4規格（2丨〇 χ 297公釐） (請先閱讀背面之注意事項再填寫本頁)535200 A7 _____ B7___ 5. Description of the invention (to) When the space 51 is filled with a replacement gas, the reflective mask 23 is transferred to the preliminary exhaust chamber 37. At this time, the gate valve 35 is closed, and the preliminary exhaust chamber 37 and the exposure processing chamber 33 are isolated from each other. Next, after the vacuum pump 39 is operated, the pressure in the preliminary exhaust chamber 37 is temporarily made equal to the pressure of the replacement gas in the space 51, and the shield 43 is removed. After that, the vacuum pump 39 is further operated to exhaust the pre-exhaust chamber 37 to a vacuum, and the above operations are performed. After the exposure is completed, when the reflection mask 23 is taken out from the exposure device, the shield 43 is covered with a robot arm or the like. The substrate 41 of the reflective mask 23 on the stage 25 is brought into close contact with each other. In this state, the reflection mask 23 is moved from the exposure processing chamber 33 to the preliminary exhaust gas 37. After that, the gate valve 35 is closed to isolate the preliminary exhaust chamber 37 from the exposure processing chamber 33, and the preliminary exhaust chamber 37 is discharged to take out the reflection mask 23 from the exposure apparatus 1. At this time, the space 51 remains in a vacuum state. When filling the space 51 with a replacement gas, first, the substrate 41, the shield 43, and the O-ring 45 of the reflection mask 23 are moved to the preliminary exhaust space 37. Next, the gate valve 35 is closed to isolate the preliminary exhaust chamber 37 from the exposure processing chamber 33 ', and the preliminary exhaust chamber 37 is filled with a replacement gas. Then, the cover 43 with the o-ring 45 embedded thereon is covered on the substrate 41 so that the two are brought into close contact. At this time, the space between the substrate and the shield is filled with replacement gas. Then, the gas in the preliminary exhaust chamber 37 is vented and the reflection mask 23 is taken out. The removed reflection mask 23 'is stored in this state. ® 3 is a cross-sectional view showing the structure of a reflective mask according to another aspect of the present invention. 16 This paper size is in accordance with China National Standard (CNS) A4 (2 丨 〇 χ 297 mm) (Please read the precautions on the back before filling this page)
535200 A7 _ __ B7___ 五、發明說明（、.< ) 此例之反射型光罩63，係形成有反射膜67基板65載 置於座台71上。該座台71與護罩73，係藉由〇形環75 來保持成氣密狀態。座台71的材料並不須特別使用玻璃， 亦可使用金屬、陶瓷寺目旨保持氣岔之材料。 該反射型光覃63，特別是使用於光罩的空白部分較少 而無法確保以0形環加以密封部份時、或不想使〇形環等 氣密構件接觸空白部份的情形時。 接著，1 兌明利用上述x射線曝光裝置之元件製造方法 的實施例。 圖4，係顯表示半導體元件之製造方法例的流程圖。 此例之製造步驟，主要係由製造或準備晶圓的步驟 (S1)、製造或準備曝光所使用之光罩的步驟(S2)、對晶圓進 行必要加工處理的晶圓處理步驟（S3)、將晶圓上所形成之 晶片一個個切割出’並裝配成可動動作的晶片組裝步驟 (S4)、以及檢查裝配後之晶片的晶片檢查步驟(S5)所構成。 又，各步驟亦進一步包含有幾個副步驟。 S3之晶圓處理步驟，係對半導體元件的性能影響最大 的步驟。該步驟係依次積層設計好之電路圖案在晶圓上， 來形成多數作爲記憶體或MPU而作動之晶片。該晶圓處理 步驟包含有以下之步驟。 (1) 用以形成作爲絕緣層之電介體薄膜或配線部、或形 成電極部之金屬薄膜等的薄膜形成步驟(使用CVD或濺鍍 法等）。 (2) 將所形成之薄膜層或晶圓基板加以氧化的氧化步驟 _ 17 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)535200 A7 _ __ B7___ 5. Description of the invention (, <) The reflective mask 63 of this example is formed with a reflective film 67 and a substrate 65 placed on a base 71. The base 71 and the shroud 73 are maintained in an airtight state by an O-ring 75. The material of the seat 71 does not need to use glass in particular, and it is also possible to use a metal or ceramic material for holding air forks. This reflective light beam 63 is particularly used when the blank portion of the photomask is small and it is not possible to secure the sealed portion with an O-ring, or when it is not desired to contact an air-tight member such as an O-ring with the blank portion. Next, an example of a method for manufacturing a device using the above-mentioned x-ray exposure apparatus will be described. FIG. 4 is a flowchart showing an example of a method for manufacturing a semiconductor device. The manufacturing steps in this example are mainly the steps of manufacturing or preparing a wafer (S1), the steps of manufacturing or preparing a photomask used for exposure (S2), and the wafer processing step of performing necessary processing on the wafer (S3) A wafer assembly step (S4) of cutting wafers formed on the wafer one by one and assembling them to move, and a wafer inspection step (S5) of inspecting the assembled wafers. Each step further includes several sub-steps. The wafer processing step of S3 is the step that has the greatest influence on the performance of the semiconductor device. This step is to sequentially stack the designed circuit patterns on the wafer to form a majority of the wafers that operate as a memory or an MPU. The wafer processing step includes the following steps. (1) A thin film forming step (using a CVD method, a sputtering method, or the like) for forming a dielectric film or a wiring portion as an insulating layer, or a metal thin film for forming an electrode portion. (2) Oxidation step of oxidizing the formed thin film layer or wafer substrate_ 17 This paper size is applicable to China National Standard (CNS) A4 (21 × X297 mm) (Please read the precautions on the back before filling (This page)
-m H *-1 ϋ> ϋ n n · n n n ϋ n n n I 535200 B7 五、發明說明（A ) 〇 (3) 爲選擇性地進行薄膜層或晶圓基板等之加工，使用 光罩(標線片）來形成光阻圖案的微影步驟。 (4) 根據光阻圖案，進行薄膜層或晶圓基板之加工的倉虫 刻(例如乾式蝕刻)步驟。 (5) 離子•雜質的植入擴散步驟° (6) 光阻剝離步驟。 (7) 檢查已加工晶圓的檢查步驟° 又，晶圓處理步驟，係僅進行所需之層數’來製造依 設計作動之半導體元件。 上述(3)之微影步驟，尤其是晶圓處理步驟之主要部分 〇 圖5，係用以說明微影步驟的流程圖。 微影步驟，包含有以下之步驟。 (531) 在前段步驟中形成有電路圖案之晶圓上，塗佈 光阻之光阻塗佈步驟。 (532) 使光阻曝光之曝光步驟。 (533) 對曝光後之光阻進行顯像，以獲得光阻圖案之 顯像步驟。-m H * -1 ϋ > ϋ nn · nnn ϋ nnn I 535200 B7 V. Description of the invention (A) 〇 (3) In order to selectively process thin film layers or wafer substrates, etc., a photomask (reticle) is used. ) To form a lithography step of a photoresist pattern. (4) Carry out a step of embossing (for example, dry etching) a thin film layer or a wafer substrate according to the photoresist pattern. (5) Ion-impurity implant diffusion step ° (6) Photoresist peeling step. (7) Inspection step for inspecting processed wafers. In addition, the wafer processing step is performed only by the required number of layers' to manufacture a semiconductor device that operates according to design. The lithography step (3) above, especially the main part of the wafer processing step. Figure 5 is a flowchart illustrating the lithography step. The lithography step includes the following steps. (531) A photoresist coating step of coating a photoresist on the wafer having the circuit pattern formed in the previous step. (532) an exposure step for exposing the photoresist. (533) developing the photoresist after exposure to obtain a photoresist pattern developing step.
(534) 用以使顯像之光阻圖案安定化之退火步驟。 於在該微影步驟之曝光步驟(S32)中，係使用上述之X 射線曝光裝置1。亦即，使用上述反射型光罩保護方法來 保護S2(光罩製作步驟）中所製作之反射型光罩，以缺陷檢 查選擇良品，若有需要則加以保管。接著，搬送至X射線 18 ^紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐)_ (請先閱讀背面之注意事項再填寫本頁) --------訂-------- *5^ 1▲ 535200 A7 _B7__ 五、發明說明（J ) 曝光裝置1，以該X射線曝光裝置1進行曝光。據此，而 能在各過程中，減低因塵埃侵入而對反射型光罩之圖案面 上產生之不良影響，且在不降低生產率之情形下，製造半 導體元件。 以上”說明了關於本發明之實施形態的反射型光罩， 但，本發明並不限於此，能進行各種的變更。 [發明效果]‘ 由以上說明可知，依據本發明，能在X射線曝光裝置 中，確實地防止塵埃侵入至反射型光罩的圖案面上，獲得 能減少因塵埃造成之缺陷的曝光轉印圖案。因此，能提供 不降低生產率之曝光裝置，亦能以良好的良率製造半導體 元件。 (請先閱讀背面之注意事項再填寫本頁) I · ·ϋ ϋ n n n n n 一 f n n n m n in I n ▲ 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）(534) An annealing step for stabilizing the developed photoresist pattern. In the exposure step (S32) of this lithography step, the X-ray exposure apparatus 1 described above is used. That is, the above-mentioned reflective mask protection method is used to protect the reflective mask made in S2 (mask making step), and a good product is selected for defect inspection, and it is stored if necessary. Next, carry it to X-ray 18 ^ paper size applies Chinese National Standard (CNS) A4 specification (21〇X 297 mm) _ (Please read the precautions on the back before filling this page) -------- Order -------- * 5 ^ 1 ▲ 535200 A7 _B7__ 5. Description of the invention (J) The exposure device 1 is exposed by the X-ray exposure device 1. This makes it possible to reduce the adverse effect on the pattern surface of the reflective mask due to the invasion of dust in each process, and to manufacture a semiconductor element without reducing the productivity. The "above" explained the reflective mask according to the embodiment of the present invention. However, the present invention is not limited to this, and various changes can be made. [Effects of the Invention] As can be seen from the above description, according to the present invention, X-ray exposure can be performed according to the present invention. In the device, it is possible to reliably prevent dust from entering the pattern surface of the reflective mask, and to obtain an exposure transfer pattern that can reduce defects caused by dust. Therefore, it is possible to provide an exposure device that does not reduce productivity and also provide good yields. Manufacture semiconductor components (Please read the precautions on the back before filling out this page) I · · ϋ ϋ nnnnn-fnnnmn in I n ▲ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)