TW527701B - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing method Download PDFInfo
- Publication number
- TW527701B TW527701B TW090127727A TW90127727A TW527701B TW 527701 B TW527701 B TW 527701B TW 090127727 A TW090127727 A TW 090127727A TW 90127727 A TW90127727 A TW 90127727A TW 527701 B TW527701 B TW 527701B
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- insulating film
- semiconductor layer
- buried
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 238000009792 diffusion process Methods 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000012535 impurity Substances 0.000 claims abstract description 57
- 238000009413 insulation Methods 0.000 claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 53
- 238000002955 isolation Methods 0.000 claims description 50
- 238000003860 storage Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 20
- 238000009825 accumulation Methods 0.000 claims description 19
- 230000002079 cooperative effect Effects 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000015654 memory Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 193
- 239000010410 layer Substances 0.000 description 140
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 64
- 229910052710 silicon Inorganic materials 0.000 description 64
- 239000010703 silicon Substances 0.000 description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 46
- 229910052814 silicon oxide Inorganic materials 0.000 description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 34
- 230000008569 process Effects 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 230000000875 corresponding effect Effects 0.000 description 11
- 239000004576 sand Substances 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 230000033228 biological regulation Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 235000012054 meals Nutrition 0.000 description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000371106A JP3808700B2 (ja) | 2000-12-06 | 2000-12-06 | 半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW527701B true TW527701B (en) | 2003-04-11 |
Family
ID=18840883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090127727A TW527701B (en) | 2000-12-06 | 2001-11-08 | Semiconductor device and its manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US6906372B2 (ko) |
EP (1) | EP1213761B1 (ko) |
JP (1) | JP3808700B2 (ko) |
KR (1) | KR100497918B1 (ko) |
CN (1) | CN1174493C (ko) |
DE (1) | DE60122656T2 (ko) |
TW (1) | TW527701B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI495088B (zh) * | 2010-03-31 | 2015-08-01 | Nanya Technology Corp | 半導體記憶元件 |
TWI793695B (zh) * | 2020-08-20 | 2023-02-21 | 南亞科技股份有限公司 | 半導體結構及其製造方法 |
Families Citing this family (89)
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TWI230392B (en) * | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
EP1357603A3 (en) * | 2002-04-18 | 2004-01-14 | Innovative Silicon SA | Semiconductor device |
EP1355316B1 (en) * | 2002-04-18 | 2007-02-21 | Innovative Silicon SA | Data storage device and refreshing method for use with such device |
US6635525B1 (en) * | 2002-06-03 | 2003-10-21 | International Business Machines Corporation | Method of making backside buried strap for SOI DRAM trench capacitor |
KR20040009383A (ko) * | 2002-07-23 | 2004-01-31 | 삼성전자주식회사 | 스택형 커패시터 및 트랜치형 커패시터를 포함하는 반도체메모리 소자 및 그 제조 방법 |
EP1588418A1 (de) * | 2003-01-30 | 2005-10-26 | X-FAB Semiconductor Foundries AG | Soi struktur mit substratkontakten beidseits der box und herstellungs-verfahren für eine solche struktur |
US7085153B2 (en) * | 2003-05-13 | 2006-08-01 | Innovative Silicon S.A. | Semiconductor memory cell, array, architecture and device, and method of operating same |
US6912150B2 (en) * | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
US20040228168A1 (en) * | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
US6787838B1 (en) | 2003-06-18 | 2004-09-07 | International Business Machines Corporation | Trench capacitor DRAM cell using buried oxide as array top oxide |
US7335934B2 (en) * | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
US20050088895A1 (en) * | 2003-07-25 | 2005-04-28 | Infineon Technologies Ag | DRAM cell array having vertical memory cells and methods for fabricating a DRAM cell array and a DRAM |
DE102004026000A1 (de) * | 2003-07-25 | 2005-02-24 | Infineon Technologies Ag | DRAM-Zellenfeld und Halbleiterspeichereinrichtung mit vertikalen Speicherzellen und Verfahren zur Herstellung eines DRAM-Zellenfeldes und eines DRAMs |
US7184298B2 (en) * | 2003-09-24 | 2007-02-27 | Innovative Silicon S.A. | Low power programming technique for a floating body memory transistor, memory cell, and memory array |
DE10351605B3 (de) * | 2003-11-05 | 2005-05-04 | Infineon Technologies Ag | Integrierter Halbleiterspeicher |
US7291541B1 (en) * | 2004-03-18 | 2007-11-06 | National Semiconductor Corporation | System and method for providing improved trench isolation of semiconductor devices |
US7009237B2 (en) * | 2004-05-06 | 2006-03-07 | International Business Machines Corporation | Out of the box vertical transistor for eDRAM on SOI |
JP2006054430A (ja) * | 2004-07-12 | 2006-02-23 | Renesas Technology Corp | 半導体装置 |
US7476939B2 (en) * | 2004-11-04 | 2009-01-13 | Innovative Silicon Isi Sa | Memory cell having an electrically floating body transistor and programming technique therefor |
US7251164B2 (en) * | 2004-11-10 | 2007-07-31 | Innovative Silicon S.A. | Circuitry for and method of improving statistical distribution of integrated circuits |
US7301838B2 (en) * | 2004-12-13 | 2007-11-27 | Innovative Silicon S.A. | Sense amplifier circuitry and architecture to write data into and/or read from memory cells |
US7301803B2 (en) * | 2004-12-22 | 2007-11-27 | Innovative Silicon S.A. | Bipolar reading technique for a memory cell having an electrically floating body transistor |
JP2006229140A (ja) * | 2005-02-21 | 2006-08-31 | Toshiba Corp | 半導体装置 |
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US20070023833A1 (en) * | 2005-07-28 | 2007-02-01 | Serguei Okhonin | Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same |
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US7355916B2 (en) * | 2005-09-19 | 2008-04-08 | Innovative Silicon S.A. | Method and circuitry to generate a reference current for reading a memory cell, and device implementing same |
US20070085140A1 (en) * | 2005-10-19 | 2007-04-19 | Cedric Bassin | One transistor memory cell having strained electrically floating body region, and method of operating same |
US7683430B2 (en) | 2005-12-19 | 2010-03-23 | Innovative Silicon Isi Sa | Electrically floating body memory cell and array, and method of operating or controlling same |
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JPH04328860A (ja) * | 1991-04-30 | 1992-11-17 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
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2000
- 2000-12-06 JP JP2000371106A patent/JP3808700B2/ja not_active Expired - Fee Related
-
2001
- 2001-11-08 TW TW090127727A patent/TW527701B/zh not_active IP Right Cessation
- 2001-11-21 EP EP01127355A patent/EP1213761B1/en not_active Expired - Lifetime
- 2001-11-21 DE DE60122656T patent/DE60122656T2/de not_active Expired - Lifetime
- 2001-11-27 US US09/993,967 patent/US6906372B2/en not_active Expired - Fee Related
- 2001-12-05 KR KR10-2001-0076476A patent/KR100497918B1/ko not_active IP Right Cessation
- 2001-12-06 CN CNB011429704A patent/CN1174493C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI495088B (zh) * | 2010-03-31 | 2015-08-01 | Nanya Technology Corp | 半導體記憶元件 |
TWI793695B (zh) * | 2020-08-20 | 2023-02-21 | 南亞科技股份有限公司 | 半導體結構及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1213761A1 (en) | 2002-06-12 |
DE60122656T2 (de) | 2007-08-30 |
US20020076880A1 (en) | 2002-06-20 |
KR100497918B1 (ko) | 2005-06-29 |
KR20020045540A (ko) | 2002-06-19 |
CN1174493C (zh) | 2004-11-03 |
US6906372B2 (en) | 2005-06-14 |
DE60122656D1 (de) | 2006-10-12 |
JP3808700B2 (ja) | 2006-08-16 |
CN1357924A (zh) | 2002-07-10 |
EP1213761B1 (en) | 2006-08-30 |
JP2002176154A (ja) | 2002-06-21 |
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