TW517374B - Packaged integrated circuit - Google Patents

Packaged integrated circuit Download PDF

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Publication number
TW517374B
TW517374B TW090105029A TW90105029A TW517374B TW 517374 B TW517374 B TW 517374B TW 090105029 A TW090105029 A TW 090105029A TW 90105029 A TW90105029 A TW 90105029A TW 517374 B TW517374 B TW 517374B
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integrated circuit
package
radio frequency
scope
patent application
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TW090105029A
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T Eynde Frank Nico Lieven Op
Willy Gerard Joseph Yo Dehaeck
Ilse Wuyts
Steven Gerd Alexander Terryn
Frank Olyslager
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Cit Alcatel
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/3011—Impedance
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Waveguide Aerials (AREA)
  • Details Of Aerials (AREA)

Description

517374 Α7 __ Β7 _ 五、發明說明（1 ) 本發明係關於一種如申請專利範圍第1項之導言中所 說明之封裝積體電路β 在該項技藝，例如在1999年1 1月8日’自 ATMEL宣告，、ATMEL宣告藍牙解決辦法〃，連 同ΑΤΜΕ L藍牙解決辦法背景資料 > 不再有電纜藍.牙無 線標準及ATMEL Corporation之即刻推出藍牙解決辦法〃， 巳知此種封裝積體電路，該二文件均發表於ΑΤΜΕ L網 址。在該二文件中，說明一種藍牙收發機係由一多晶片模 組所構成，其包括在一球狀格栅陣列封裝之無線電，基帶 及快閃記憶體。此模組予以組裝在一印刷電路板，連同性 質不同之外部個別組件，諸如一濾波器及一天線。因爲此 種收發機使用在不同種類之小型手提式裝置，此種收發機 裝置應該必要爲很小。另外計及預期大量之此等收發機應 用在藍牙支援裝置，此種收發機之生產成本及安裝成本應 該低。 本發明之一項目的，爲提供一種以上巳知類型之封裝 積體電路，但其相對於巳知者爲較小，並有減低之成本。 根據本發明，此目的係藉在申.請專利範圍第1項說明 之封裝積體電路所達成。 L· (請先Μ讀背面之注意事項再填寫本頁) 實在，此目的係藉在一在封裝積體電路實施之積體電 路晶粒提供至少一射頻組件，同時射頻天線也予以整合在 相同封裝所達成。在一包括一天線之部份之整個封裝，可 予以整合在一種無線電應用，諸如一種藍牙應用，代替將 一射頻模組及一單獨之天線合倂在一印刷電路板，供在此 本紙张尺度適用中國國家標準（CNS)A4規格（2]0 X 297公釐） 517374 A7 五、發明說明（2 (請先閱讀背面之注意事項再填寫本頁) 種無線電應用’諸如藍牙之應用。以此方式，便節省在印 刷電路板及在無線電應用外殼之空間，並同時減低實施無 線電應用之成本，因爲僅需要一動作，代替一動作供安裝 無線電模組，及一動作供安裝天線在印刷電路板，以及隨 後處理二元件之互相連接。 在申請專利範圍第2項中，說明本發明之另一特徵說 明實施例。 射頻天線係以至少一金屬物體在一容納封裝積體電路 之元件之積體電路封裝內所構成。使用一在積體電路封裝 內之現有或另外金屬物體，在積體電路之封裝內便構成天 線。 隨後分別在申請專利範圍第3及4項中說明本發明之 特徵說明實施例。 線· 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 在該二替代性實施例，使用一在封裝內之金屬物體， 供實施射頻天線。首先，在申請專利範圍第3項，藉金屬 線接合將例如積體電路晶粒之輸出耦合至一輸出終端，而 構成整合射頻天線。如果一金屬線接合之長度爲目標爲將 行予以接收或傳輸之無線電信號波長之1 / 2 λ或1 / 4 λ ’此便爲可行。第二，在申請專利範圍第4項，作爲 一種替代，使用一在積體電路封裝內之金屬引線框架，作 爲射頻天線。 在申請專利範圍第5項中說明本發明之一另外特徵說 明實施例。 作爲另一替代性射頻天線’可使用至少一平面金屬圖 本紙張尺度適用中國國家標準（CNS〉A4規格（2]〇χ 297公釐） -5- 517374 A7 B7 經濟部智慧財產局員工消費合作社印奴 五、發明說明（3 ) 案作爲天線。將金屬圖案模製在封裝材料，或將圖案完成 在封裝之表面，藉以可將此種至少一金屬圖案包括在積體 電路封裝。 另外，天線係由一接地金屬平面所構成。圖案及接地 平面在積體電路封裝內被一絕緣層所分開。 在申請專利範圍第6項中，說明本發明之又一特徵說 明實施例。 射頻天線係由一平面縫隙圖案置於一接地基板上所構 成。此基板予以完成在一積體電路封裝之表面。使用一種 具有高電介質常數之陶瓷材料，藉以可甚至更使在陶瓷基 板上之射頻天線尺寸最小。 在申請專利範圍第7項中，也說明本發明之另一特徵 說明實施例。 在接地基板上之射頻天線之縫隙圖案，係由一第一 S -形縫隙所構成，此第一 S -形縫隙之長度確定將行予以 接收或傳輸之射頻信號之諧振頻率。切開部之S -形導致 一非線性變化極化輻射圖案。應用此整形天線之技術，僅 只對天線之形狀或尺寸略作修改，便方便使射頻天線適合 另一諧振頻率。以此方式，天線便爲頻率可調諧。 在申請專利範圍第8項中，說明本發明之一隨後特徵 說明實施例。 除第一 S -形縫隙外，另有一相對於第一 s —形縫隙 旋轉9 0度之第二S -形縫隙。此第二s -形縫隙在射頻 信號之操作頻率之諧波頻率抑制較高階諧振，並從而減少 (請先W讀背面之注意事項再填寫本頁) ,# 訂· · •線 本紙张尺度適用中國國家標準（CNS)A4規格（2]0><297公釐） -6- 517374 A7 五、發明說明（4 (請先閱讀背面之注意事項再填寫本頁) 射頻彳s號之帶寬。切開部之s -形導致一非線性極化幅射 圖案，並且二S -形縫隙之組合不僅界定諧振頻率及帶寬 ，而且除了所需要之射頻信號外，並抑制所有其他諧波頻 率’藉以也構成某些濾波器特徵。應用此整形天線之技術 ’僅只對天線之形狀或尺寸略作修改，便方便使射頻天線 適合另一諧振頻率，並且也抑制其他諧波頻率。以此方式 ’天線便也爲帶寬可調諧。應用第二S -形天線本身，提 供一種濾波器特徵，藉以減低應用一另外濾波元件之需要 〇 在後附申請專利範圍第9 ，1 0及1 1項中，述及本 發明之另外特徵說明實施例。 將此種射頻模組整合在一標準積體電路封裝，諸如一 球狀格柵陣列封裝，方形扁平包裝封裝或一小輪廓封裝， 或任何其他標準封裝，封裝藉以可藉標準設備，諸如一焊 料流動機或測試設備予以處理，產生成本上之減低。使用 此等標準封裝，藉以也減少總體無線電設備之大小及成本 另外，本發明也係關於一種射頻模組，包括至少一如 以上所說明之封裝積體電路。 參照一實施例之下列說明，配合附圖，將會更明白本 發明之以上及其他諸多目的及特色，並將會最佳瞭解本發 明本身，在附圖中： 圖1表示一在其中實施一射頻模組’連同一射頻天線 之球狀格柵陣列封裝；圖2表示在圖1之射頻模組中所使 本紙张尺度適用中國國家標準（CNS)A4規格（2]〇χ 297公釐） 517374 A7 B7 五、發明說明（5 ) 用縫隙天線之圖案 主要元件對照表 A 點A B 點B G N D PL 平面金屬 層 G N D P L 1 接地平面 I C D 積體電路 晶 粒 I C P 平面金屬 層 I c P A 球狀格栅 陣 列 封裝 M E T 第一金屬 化 層 P C B 印刷電路 板 R F A 天線 S 1 第一S - 形 縫 隙 s 2 第二S - 形 縫 隙 V 1 通道孔 V 2 通道 k V 3 通道孔 ΐ V 4 通道 1 丨才 V 5 通道 ί h V 6 通道孔 ----------ίιιΛ^ —— (請先閱讀背面之注意事項再填寫本頁) •線 在下列諸段，請參照附圖，將說明一根據本發日月& $ 法之實施。在此說明之第一部份，說明如在圖1中所提出 本紙张尺度適用中國國家標準（CNS)A4規格（2]0 X 297公釐） 517374 % A7 ________ B7 五、發明說明（6 ) ，在其中實施本發明之封裝積體電路之球狀格柵陣列封裝 I C P A之主要元件。此部份後繼爲在每一前所述元件間 (請先閱讀背面之注意事項再填寫本頁) 之所有互相連接之說明。隨後說明本發明實施之實際執行 〇 本發明之球狀格栅陣列（Ball Grid Array，簡稱 BGA)封裝I CPA爲一種可安裝在印刷電路板（ 經濟部智慧財產局員工消費合作社印製
Printed CircuitBoard，簡稱P C B )之腔向下封裝。此 BGA封裝基本上由平面金屬層GNDPL，I CP，藉 絕緣層分開所構成。絕緣層係以一種陶瓷材料所完成。在 球狀格柵陣列封裝I C P A之頂部，完成一第一金屬化層 MET。天線RFA使用熟知縫隙技術，在金屬化層 Μ E T予以蝕刻。在射頻天線下面有一陶瓷絕緣層及平面 金屬層GND P L，用作接地平面。另外在接地平面 GNDPL下面有另一絕緣層及金屬層I CP，用作一互 相連接平面。在此層I CP，在一積體電路晶粒I CD之 所有接腳與所有輸出連接器或內部元件間之互相連接予以 蝕刻。B G A封裝之輸出終端，爲可焊接在印刷電路板 P C B之焊球。 積體電路晶粒I C D內含電子射頻組件，諸如電晶體 ，電容器，電感器，及電阻器。 在所有元件之間使用通道孔，進行垂直互相連接，其 爲在絕緣層塡滿金屬之孔。利用焊球完成至印刷電路板 P C B之連接。 射頻天線R F A之終端藉通道孔諸如V 1 ，及藉在層 本紙张尺度適用中國國家標準（CNS)A4規格（2]〇χ 297公发） -9- 517374 A7 B7 五、發明說明（7 ) (請先閱讀背面之注意事項再填寫本頁) I CP之金屬互相連接，耦合至積體電路晶粒I CD。使 用在印刷電路板P C B耦合至一接地平面GND P L 1之 通道孔V3及V6 ，接地平面GNDPL連接至電接地。 積體電路晶粒I C D也藉通道V 2親合至接地平面 GND P L。通道V 4及V 5用以將積體電路晶粒信號輸 出耦合至安裝在印刷電路板P C B之其他隨後元件。積體 電路晶粒I C D之接腳經由金屬線接合W B耦合至互相連 接平面I C P。 .線 在圖2中，示如在B GA封裝之頂部，在第一金屬化 層所構成之射頻天線R F A之更多細節。天線R F A使用 熟知縫隙技術予以蝕刻，此處”縫隙”意爲一在金屬圖案 之開口。天線R F A係由一第一 S —形縫隙S 1及一相對 於第一 S -形縫隙旋轉9 0度之第二S -形縫隙S 2所構 成。天線被一在天線邊緣之通道孔V Η之正方形陣列所包 圍。 在下段，解釋先前所述元件之關聯性及定位。 經濟部智慧財產局員工消費合作社印製 首先，使用腔向下封裝，將晶粒置於在二接地平面 GNDPL及GNDPL I之間，藉以方便將積體電路晶 粒I C D自輻射屏蔽。在另一方面，應用接地平面 G N D P L，藉以也將射頻天線R F Α自積體電路晶粒 I CD屏蔽。此結構使能將一積體電路晶粒I CD及一天 線R F A合倂在一封裝內，而無相互影響及/或性能干擾 〇 天線R F A係由一縫隙圖案置於一陶瓷絕緣層所構成 -1〇- 本紙張尺度適用中國國家標準（CNS)A4規格（2】〇χ 297公釐） 517374 A7 B7 五、發明說明（8 ) (請先M讀背面之注意事項再填寫本頁) 。因爲陶瓷材料之高電介質常數ε r ，及準確控制層之尺 寸，諸如厚度及圖案布局之能力，而可使天線尺寸最小， 並可準確複製天線尺寸。縫隙圖案本身係由二S 一形縫隙 SI ’ S2旋轉9 0度所構成。第一 S —形縫隙S1之長 度確定天線諧振頻率。第二S -形縫隙S 2在操作頻率之 諧波頻率抑制較高階諧振並減少帶寬。切開部之S 一形導 致一非線性極化輻射圖案，並且二S -形縫隙之組合不僅 界定諧振頻率及帶寬，而且除了所需要之射頻信號外，也 抑制所有其他諧波頻率，藉以界定有些濾波器特徵。 切開部之S -形~導致一非線性極化輻射圖案。應用此 整形天線之技術。僅只對天線之形狀或尺寸略作修改，便 方便使射頻天線適合另一諧振頻率，並且也抑.制其他諧波 頻率。以此方式，天線爲頻率可調諧。 痤齊^pitp曰慧讨轰导員!.肖費合咋fi-屮泣 而且，應用此整形天線之技術。僅只對天線之形狀或 尺寸略作修改，便方便使射頻天線適合另一諧振頻率，並 且也抑制其他諧波頻率。以此方式，天線也爲帶寬可調諧 。應用第二S -形天線本身具有濾波器特徵，便免除需要 應用一另外濾波元件。 天線被一正方形陣列之通道孔所包圍，其使在天線邊 緣之金屬化接地，俾避免邊緣效應。 天線在圖2之點A及B予以差分激勵，利用在此二點 之通道孔作成連接至晶粒。而且，自點A及點B所見之阻 抗，由於天線之對稱而爲確切相同。 供使天線之大小最小，天‘線-濾波器以及在矽及天線 本紙張尺度適用中國國家標準（CNS)A4規格（2]〇χ_297公发） -11 - 517374 A7 ___B7 _ 五、發明說明（9 ) 之間屏蔽所使用之技術，使得可將所有無線電功能整合至 一供藍牙應用之很小晶片封裝解決辦法。 要述及的是，在積體電路封裝使用金屬物體，諸如金 屬線接合及金屬引線框架之實施例，也適合在封裝積體電 路內實施一射頻天線。 另外要述及的是，代替使用一種B GA封裝，也可使 用一種小輪廓封裝，一種方形扁平包裝封裝，或任何其他 標準封裝，以提供與B G A封裝所提供之相同優點。本發 明也可應用於內含在陶瓷材料以外之其他材料所完成絕緣 層之封裝。 雖然以上業經配合特定裝置說明本發明之原理，但請 •予淸楚瞭解，此說明僅意在作爲實例，而不作爲對於如在 後附申請專利範圍所界定本發明之範圍之限制。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印ίκ 本紙張尺度適用中國國家標準（CNS)A4規格（2]ϋ X 297公发） -12-

Claims (1)

  1. 517374 A8 B8 C8 ___D8 六、申請專利範圍 附件一：第901 05029號專利申請案 中文申請專利範圍修正本 (請先閱讀背面之注意事項再填寫本頁) 民國91年11月15日修正 1 . 一種封裝積體電路（P I C)，包含至少一射頻 組件，包括在一與一射頻·天線（R F A )關連之積體電路 晶粒（I C D )中，該積體電路晶粒（I c D )以包括在 δ亥封裝積體電路（P I C )中，該射頻天線也包括在該封 裝積體電路封裝（P I C )中，並排除在該積體電路晶粒 (I c D )外，其特徵在於一屏蔽安插介於該積體電路晶 粒和該射頻天線間，其中該積體電路藉由路由過該屏蔽之 金屬線而直接連接至該射頻天線。 2 ·如申請專利範圍第1項之封裝積體電路（Ρ I c )，其特徵爲，該封裝積體電路（P I C )包括一積體電 路封裝（I C P A )，其容納該至少一射頻組件及該射頻 天線（R F A )，其由至少一爲該積體電路封裝之一部份 之金屬物體所構成。 經濟部智慧財產局員工消費合作社印製 3 ·如申請專利範圍第2項之封裝積體電路（Ρ I C )，其中，該射頻天線（R F A )予以施加在該積體電路 封裝（I C Ρ A )之一金屬引線，框架。 4 .如申請專利範圍第1項之封裝積體電路（ρ I C )，其中，該射頻天線（R F A )係由至少一平面金屬圖 案’藉一絕緣層與該屏蔽分開所構成。 · 5 .如申請專利範圍第4項之封裝積體電路（Ρ I C 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） < 517374 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 )，其中，該平面金屬圖案爲一金屬縫隙圖案，及該絕緣 層爲陶瓷層。 6 ·如申請專利範圍第5項之封裝積體電路（P I c )，其中，該縫隙圖案係由一第一 S -形縫隙所構成。 7 ·如申請專利範圍第6項之封裝積體電路（P I C )，其中，該射頻天線（P F A )包含一相對於該第一 S 一形縫隙旋轉9 0度之第二S -形縫隙。 8 ·如申請專利範圍第1項之封裝積體電路（p I C )，其中，該積體電路封裝（I C P A )爲一球狀格柵陣 列封裝。 9 ·如申請專利範圍第1項之封裝積體電路（p I C )，其中，該積體電路封裝（1〇?六）爲~種方形扁平 包裝封裝。 1〇.如申請專利範圍第1項之封裝積體電路（ p I c )，其中，該積體電路封裝爲一種小輪廓封裝。 1 1 · 一種射頻模組，其特徵在於包括至少—如串請 專利範圍第1至1 0項之任何一項之封裝積體電路（ P I C )。 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） ^ 訂------ (請先閱讀背面之注意事項再填寫本頁) -2-
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7602050B2 (en) 2005-07-18 2009-10-13 Qualcomm Incorporated Integrated circuit packaging
TWI406447B (zh) * 2006-01-26 2013-08-21 Ibm 與由封裝的引線形成之天線一起封裝之積體電路晶片之裝置及方法

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60022096T2 (de) 2000-01-19 2006-06-01 Fractus, S.A. Raumfüllende miniaturantenne
US7369090B1 (en) * 2001-05-17 2008-05-06 Cypress Semiconductor Corp. Ball Grid Array package having integrated antenna pad
US6551134B1 (en) * 2001-06-11 2003-04-22 Picolight Incorporated Mounted transceivers
US6914568B2 (en) * 2001-09-28 2005-07-05 Centurion Wireless Technologies, Inc. Integral antenna and radio system
JP3916068B2 (ja) 2002-11-06 2007-05-16 ソニー・エリクソン・モバイルコミュニケーションズ株式会社 無線装置
WO2004042868A1 (en) 2002-11-07 2004-05-21 Fractus, S.A. Integrated circuit package including miniature antenna
JP3666749B2 (ja) 2003-01-07 2005-06-29 沖電気工業株式会社 半導体装置
SG165149A1 (en) * 2003-10-22 2010-10-28 Zhang Yue Ping Integrating an antenna and a filter in the housing of a device package
US6998709B2 (en) * 2003-11-05 2006-02-14 Broadcom Corp. RFIC die-package configuration
US7444734B2 (en) 2003-12-09 2008-11-04 International Business Machines Corporation Apparatus and methods for constructing antennas using vias as radiating elements formed in a substrate
EP1745418A1 (en) * 2004-05-06 2007-01-24 Fractus, S.A. Radio-frequency system in package including antenna
US7042398B2 (en) 2004-06-23 2006-05-09 Industrial Technology Research Institute Apparatus of antenna with heat slug and its fabricating process
CN100395918C (zh) * 2004-07-08 2008-06-18 财团法人工业技术研究院 天线暨散热金属片的装置与制造方法
WO2006008180A1 (en) 2004-07-23 2006-01-26 Fractus S.A. Antenna in package with reduced electromagnetic interaction with on chip elements
WO2006034940A1 (en) 2004-09-27 2006-04-06 Fractus, S.A. Tunable antenna
JP4718192B2 (ja) * 2005-01-17 2011-07-06 新光電気工業株式会社 リーダ／ライタ
KR101162557B1 (ko) * 2005-03-15 2012-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 갖는 전자 장치
US8679674B2 (en) 2005-03-25 2014-03-25 Front Edge Technology, Inc. Battery with protective packaging
US7846579B2 (en) 2005-03-25 2010-12-07 Victor Krasnov Thin film battery with protective packaging
US20060276157A1 (en) * 2005-06-03 2006-12-07 Chen Zhi N Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications
KR100714310B1 (ko) * 2006-02-23 2007-05-02 삼성전자주식회사 변압기 또는 안테나를 구비하는 반도체 패키지들
IL173941A0 (en) * 2006-02-26 2007-03-08 Haim Goldberger Monolithic modules for high frequecney applications
US8373429B2 (en) * 2006-03-07 2013-02-12 Steven Slupsky Method and apparatus for interrogating an electronic component
US7692295B2 (en) 2006-03-31 2010-04-06 Intel Corporation Single package wireless communication device
WO2007147629A1 (en) 2006-06-23 2007-12-27 Fractus, S.A. Chip module, sim card, wireless device and wireless communication method
US8738103B2 (en) 2006-07-18 2014-05-27 Fractus, S.A. Multiple-body-configuration multimedia and smartphone multifunction wireless devices
JP4996193B2 (ja) * 2006-10-06 2012-08-08 ルネサスエレクトロニクス株式会社 配線基板、半導体パッケージ
JP4996345B2 (ja) * 2007-05-30 2012-08-08 株式会社東芝 アンテナ装置及び情報端末装置
KR100835061B1 (ko) * 2007-06-11 2008-06-03 삼성전기주식회사 반도체 칩 패키지
CN101505176B (zh) * 2007-12-21 2012-09-05 北京登合科技有限公司 移动终端的蓝牙模组
US7692590B2 (en) * 2008-02-20 2010-04-06 International Business Machines Corporation Radio frequency (RF) integrated circuit (IC) packages with integrated aperture-coupled patch antenna(s)
GB2458656A (en) * 2008-03-26 2009-09-30 Jonathan Gregory Leckey Compact integrated circuit antenna
JP2009239675A (ja) * 2008-03-27 2009-10-15 Toshiba Corp 通信モジュールおよび電子機器
TWI370530B (en) 2008-05-21 2012-08-11 Advanced Semiconductor Eng Semiconductor package having an antenna
CN101286505B (zh) * 2008-05-26 2012-06-13 日月光半导体制造股份有限公司 具有天线的半导体封装结构
JP5970186B2 (ja) * 2008-06-26 2016-08-17 トムソン ライセンシングＴｈｏｍｓｏｎ Ｌｉｃｅｎｓｉｎｇ 集積アンテナを有するフロントエンド・ブロック
GB0815306D0 (en) 2008-08-21 2008-09-24 Sarantel Ltd An antenna and a method of manufacturing an antenna
US8889548B2 (en) 2008-09-30 2014-11-18 Infineon Technologies Ag On-chip RF shields with backside redistribution lines
US7948064B2 (en) 2008-09-30 2011-05-24 Infineon Technologies Ag System on a chip with on-chip RF shield
US8063469B2 (en) * 2008-09-30 2011-11-22 Infineon Technologies Ag On-chip radio frequency shield with interconnect metallization
US8178953B2 (en) 2008-09-30 2012-05-15 Infineon Technologies Ag On-chip RF shields with front side redistribution lines
US8169059B2 (en) * 2008-09-30 2012-05-01 Infineon Technologies Ag On-chip RF shields with through substrate conductors
FR2937796A1 (fr) 2008-10-29 2010-04-30 St Microelectronics Grenoble Dispositif semi-conducteur a ecran de protection
WO2010058337A1 (en) * 2008-11-19 2010-05-27 Nxp B.V. Millimetre-wave radio antenna module
US8467737B2 (en) * 2008-12-31 2013-06-18 Intel Corporation Integrated array transmit/receive module
DE102009009442A1 (de) * 2009-02-18 2010-09-09 Polylc Gmbh & Co. Kg Organische Elektronikschaltung
US8502735B1 (en) * 2009-11-18 2013-08-06 Ball Aerospace & Technologies Corp. Antenna system with integrated circuit package integrated radiators
US20120142398A1 (en) * 2010-03-03 2012-06-07 Furukawa Electric Co., Ltd. Wireless communication module and gsm multiband wireless communication module
CN102299142B (zh) * 2010-06-23 2013-06-12 环旭电子股份有限公司 具有天线的封装结构及其制作方法
US9386688B2 (en) * 2010-11-12 2016-07-05 Freescale Semiconductor, Inc. Integrated antenna package
US9077077B2 (en) * 2011-07-13 2015-07-07 Mediatek Singapore Pte. Ltd. Mobile communication device and antenna device
JP5729186B2 (ja) 2011-07-14 2015-06-03 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8928139B2 (en) * 2011-09-30 2015-01-06 Broadcom Corporation Device having wirelessly enabled functional blocks
US8865340B2 (en) 2011-10-20 2014-10-21 Front Edge Technology Inc. Thin film battery packaging formed by localized heating
US9887429B2 (en) 2011-12-21 2018-02-06 Front Edge Technology Inc. Laminated lithium battery
US8864954B2 (en) 2011-12-23 2014-10-21 Front Edge Technology Inc. Sputtering lithium-containing material with multiple targets
US9257695B2 (en) 2012-03-29 2016-02-09 Front Edge Technology, Inc. Localized heat treatment of battery component films
US9077000B2 (en) 2012-03-29 2015-07-07 Front Edge Technology, Inc. Thin film battery and localized heat treatment
CN102694565A (zh) * 2012-05-18 2012-09-26 西安电子科技大学 一种集成蛇形天线的3d-mcm射频系统
JP5710558B2 (ja) * 2012-08-24 2015-04-30 株式会社東芝 無線装置、それを備えた情報処理装置及び記憶装置
US9325056B2 (en) * 2012-09-11 2016-04-26 Alcatel Lucent Radiation efficient integrated antenna
US9159964B2 (en) 2012-09-25 2015-10-13 Front Edge Technology, Inc. Solid state battery having mismatched battery cells
US8753724B2 (en) 2012-09-26 2014-06-17 Front Edge Technology Inc. Plasma deposition on a partially formed battery through a mesh screen
US9356320B2 (en) 2012-10-15 2016-05-31 Front Edge Technology Inc. Lithium battery having low leakage anode
CN103066370A (zh) * 2012-12-28 2013-04-24 中兴通讯股份有限公司 一种栅格阵列封装模块及设备
US9843106B2 (en) 2014-10-09 2017-12-12 Taiwan Semicondcutor Manufacturing Company, Ltd. Integrated fan out antenna and method of forming the same
US10008739B2 (en) 2015-02-23 2018-06-26 Front Edge Technology, Inc. Solid-state lithium battery with electrolyte
CN107369653A (zh) * 2016-05-13 2017-11-21 北京中电网信息技术有限公司 一种高干扰组件的系统级封装方法、结构及分离阵列结构
US10186779B2 (en) 2016-11-10 2019-01-22 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US10957886B2 (en) 2018-03-14 2021-03-23 Front Edge Technology, Inc. Battery having multilayer protective casing
CN109728447B (zh) * 2018-12-28 2023-01-13 维沃移动通信有限公司 天线结构及高频多频段无线通信终端
US20220336942A1 (en) * 2019-09-04 2022-10-20 Agency For Science, Technology And Research Antenna system, and method of forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63181505A (ja) * 1987-01-23 1988-07-26 Nippon Telegr & Teleph Corp <Ntt> 小形スロツトアンテナ
JPH0685530A (ja) * 1992-08-31 1994-03-25 Sony Corp マイクロストリップアンテナ及び携帯無線機
JPH06196924A (ja) * 1992-10-29 1994-07-15 Sanyo Electric Co Ltd マイクロ波アンテナ
US5528222A (en) * 1994-09-09 1996-06-18 International Business Machines Corporation Radio frequency circuit and memory in thin flexible package
JPH08250913A (ja) * 1995-03-15 1996-09-27 Honda Motor Co Ltd Ｍｍｉｃパッケージ組立
JP3266491B2 (ja) * 1996-02-29 2002-03-18 京セラ株式会社 高周波用パッケージ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7602050B2 (en) 2005-07-18 2009-10-13 Qualcomm Incorporated Integrated circuit packaging
TWI406447B (zh) * 2006-01-26 2013-08-21 Ibm 與由封裝的引線形成之天線一起封裝之積體電路晶片之裝置及方法

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US20010052645A1 (en) 2001-12-20
SG94765A1 (en) 2003-03-18
KR20010082044A (ko) 2001-08-29

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