TW516135B - Symmetrical package for semiconductor die - Google Patents

Symmetrical package for semiconductor die Download PDF

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Publication number
TW516135B
TW516135B TW089116854A TW89116854A TW516135B TW 516135 B TW516135 B TW 516135B TW 089116854 A TW089116854 A TW 089116854A TW 89116854 A TW89116854 A TW 89116854A TW 516135 B TW516135 B TW 516135B
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TW
Taiwan
Prior art keywords
die
lead
leads
heat sink
lead frame
Prior art date
Application number
TW089116854A
Other languages
English (en)
Inventor
Allen K Lam
Richard K Williams
Alexander K Choi
Original Assignee
Allen K Lam
Richard K Williams
Alexander K Choi
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Filing date
Publication date
Application filed by Allen K Lam, Richard K Williams, Alexander K Choi filed Critical Allen K Lam
Application granted granted Critical
Publication of TW516135B publication Critical patent/TW516135B/zh

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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

516135 修正 案號 89116854 五、發明說明（1) 本案係有關由本申請人所同樣擁有且同時提出申請的申 請案編號[代理人檔案編號M- 75 46 US]，併述於此以供參 考。 發明背景 呈積體電路晶片（I C )形式的半導體裝置，’當其，結合於例 如一電腦或行動電話之產品時，典型地必須被架設於例如 一印刷電路板之一平坦面上。今日並不存在有表面安裝半 導體封裝技術可滿足下一代分立功率半導體裝置及I C的需 求。 此種表面安裝功率封裝必須至少包括下列特色： _ 低電阻。 於裝置的金屬互連線分路電流以及降低橫向電阻的 能力 低熱阻。 於垂直方向（貫穿背側）或橫向（頂側）達成高電流能 力 高製造能力。 低特有材料成本。 低製造成本。 、 於功率應用上操作可靠。 « 有助於至少三個（且較佳更多個）隔開連結至半導體 的能力。 10. 低外廓（高度）及小足跡。 功率半導體裝置及1C有兩種類型，一類型是由於具有低 導通狀態電壓降（因而具有低功率耗散）而傳導高電流者，
O:\64\64518-911111.ptc 第6頁 516135 修正 案號 89116854 包括 礎， 框等 單純 計於 靠性 ，例 ，由 可能 如此 極體 於分 常需 封裝 大量功率 用途、組 而被達成 阻及熱阻 直向而電 裝置，但 全球每年 度製造能 致此種裝 封裝 原因 的價 提高 製造 ，表 如電 於重 激起 〇以 、變 立電 要四 技術 五、發明說明（2) 以及另一類型是由於耗散 由於功率裝置有各種不同 列首二特色（亦即低電阻） 而理想上封裝將提供低電 第四特色，亦即橫向或 可應用至橫向及直向功率 須為可傳導南電流。 當然，因為功率電晶體 使用，故封裝必須具有高 複性或產能問題皆可能導 用者的悲惨後果。 另一項問題為成本低， 本。其中材料成本較為基 線、塑膠成型件、銅引線 價格，而實質上無法透過 使用較小量材料的封裝設 封裝於功率用途上的可 置使用上常見的操作條件 周圍溫度，明顯自行加熱 等。重複電流脈衝或加熱 於冶金接面及交界面尤為 需要二端子封裝用於二 至少三個連結的封裝可用 慧型功率半導體組件便非 超出八個分立連結的功率 而傳導「南」電流者。 成及操作，故可達成上 第三特色（低熱阻），反 二者。 流規定功率封.裝理想上 二取向中之至少一方向 係以數十億之單位大量 力。任何固有的製造重 置的供應商且可能是使 材料成本及其製造成 在於某些材料例如金 格係基於全球原料市場 半導體產能而予改變。 商較為價廉。 示其必須可忍受功率裝 流尖峰，比一般更高的 複熱過渡造成的熱震 疲勞關聯的故障，特別 愈少交界面為較佳。 遷阻遏器及熔絲，支援 晶體。對不同之各種智 個連接以迄八個連接。 的用途集中在功率積體
O:\64\64518-911111.ptc 第7頁 516135 案號 89116854 9( 年（ί月" 修正 五、發明說明（3) 電路。 低外廓表 P C板的製造 同一片板上 某些 外廓 需 話 要。 小足 置，此 佳。 於相 的半導 雖然 封裝技 絲毫也 用接線 效，特 極性電 線連結 式閘極 製造 MOSFET 晶粒與 隨後接 於繫桿 於 低 跡通 處尺 關考 體晶 此等 術無 無法 造成 別連 晶體 至閘 連結 含有 之製 頂引 著為 對引 面安裝封裝雖然並非 ，原因在於封裝於低 其它I C的相同特徵， 情況下例如電池封包 封裝對於滿足終產品 常與整體產品大小有 寸大小為消費者購買 量方面，封裝於電路 粒愈大，則對一指定 目標似乎顯然易明， 法充分滿足此等成本 滿足此等需求。習知 的結果。接線促成額 結至功率MOSFET、絕 的頂側源極墊之導線 極，但此等嘗試未能 無接線源極連結組合 造流程中之一種嘗試 線框間的壞氧樹脂晶 倒裝晶粒且透過環氧 線框的晶粒附著部分 通用所需，但可方便用於 外廓封裝的功率裝置具有 因而可避免特殊處理所 ，PCMCIA +及蜂_巢式電 的嚴苛厚度要求相當重 關，特別於可攜式電子裝 的重要標準考量：愈小愈 板上 大小 但事 效益 封裝 外電 緣閘 。若 成功 的足 而言 實為 需求 的許 阻且 極雙 干公 而公 跡愈小 其性能 今日功 ，於某 多缺點 對熱傳 極性電 司試圖 司被迫. 以及含有 愈佳。 率半導體 些情況下 係由於使 導上無 晶體或雙 發展無接 回到接線 閘極接線聯結的功率 顯示於圖1 A。此流程中， 粒附接（以及部分硬化）， 樹脂附著至底引線框。由 產生扭力，因而難以最佳
O:\64\64518-911111.ptc 第8頁 516135 案號 89Π6854 年"月（/曰 修正 五、發明說明（4) 維持均勻一致交界面環氧樹脂層。此外於此流程中，接線 必須發生於無接線晶粒附著之後。進行接線後，仍然必須 進行模製、修整及成形。 圖1 B舉例說明一環氧樹脂附著於晶粒44 2之頂引線框 4 4 0。彎曲金屬「駝峰」引線框44 0 (亦即階級上下固定引 線框）使一致性晶粒附著操作變困難。於晶粒附著後，圖 1 C平面圖舉例說明頂引線框440之無接線部分444以及較短 的「跳水板」件446用於接線閘極。即使於一邊有繫桿繫 住，引線框44 0於接線過程保持穩定困難。 於頂引線框440附著於晶粒44 2後，底引線框448使用導 電性環氧樹脂附著於晶粒4 4 2，如圖1 D之剖面圖及圖1 E之 平面圖顯示。於晶粒附著及硬化期間控制扭力及壓力對於 獲得可靠產品相當重要。然後閘極引線44 6使用接線4 50接 線，如圖1 F之透視圖顯示。於同一封裝中，混合採用接線 及無接線方法就成本而言不利，原因在於晶粒引線框或晶 粒薄帶總成必須移動至不同的機器來進行線接合。產品的 處置耗時且成本高。事實上此種方法在達成製造上有多種 問題，未曾供商業用且儘管業界已經投資多年也可能被放 棄。晶粒裂開、電阻改變以及操作時或老化測試時電阻變 化全部皆屬此種方法的問題。 注意閘極引線446就機械上而言類似跳水板於接線期間 其自由端極少支持。閘極引線的移動造成閘極接線4 5 2的 品質有疑問而多變。圖1 G現示塑膠模製後的另一幅透視圖 (以虛線4 5 4顯示）。設計上的非對稱性讓此種辦法的製造 上極具挑戰性且無法重複再現。
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另一辦法顯示於 附著於銅薄帶層而 薄帶總成附著至習 然需要接線來連結 及成型。 圖2 A之流程圖。此 形成晶粒及薄帶總 知引線框。於此第 裝置的閘極。隨後 種辦法中，晶粒首先 成，隨後接著晶粒及 二次附著後，部件仍 結構件經模製、修整
:2 B中，再度為金屬之駝峰件，本例中「薄帶」4 6 〇係 ^背於晶粒4 6 2。薄帶4 6 0寬度均勻（參考圖2 c )，因此必須 。又置成不會遮盍閘極接線墊4 4 (參考圖2 e )但仍然接觸源 極。薄帶460於圖2D之剖面圖及圖2E之平面圖顯示為源極 引線以環氧樹脂附著於晶粒4 6 2而形成晶粒與薄帶總成 4 6 1。重要地駝峰引線框4 6 〇的腳4 6 6底面及晶粒4 6 2必·須完 美地共面以防製程後期發生問題。 圖2 F之剖面圖及圖2 G之平面圖顯示的底引線框4 7 0類似 尋常引線框。注意雖然引線框於圖2F-2R繪製成分開部 件’但實際上部件係藉繫桿（圖中未顯示）連結。引線框 4 7 0於附著於晶粒之前典型為平坦，但相信也可預先成型 (亦即已經彎曲）因而更難以操控。 圖2 Η及2 I中，晶粒及薄帶總成4 6 1包含晶粒4 6 2及銅薄帶 4 6 0係排齊於底引線框4 7 0，後者以環氧樹脂「點」4 7 2塗 裝。此時，環氧樹脂點472並無與晶粒之表面結構特徵， 例如閘極襯墊4 64的對應關係。圖2 J為晶粒及薄帶總成4 61 推送至底引線框4 7 0之視圖，沿圖2 I之截面J - J所取的剖面 圖。顯然，晶粒4 60底面與薄帶46 0腳4 6 6共面對於同時達 成二良好且低電阻的環氧樹脂接合相當重要，一者於晶粒 460下方而另一者於腳466下方。由於第二接合的面積有
O:\64\64518-911111.ptc 第10頁 516135 案號 89116854 V年（（月！丨 曰 修正 五、發明說明（6) 限，故此區比較圖1 G顯示的三端子無接線封裝促成較高電 阻。沿圖2 I截面K-K所取之閘極接合區之視圖顯示於圖 2K ° 於加壓擠壓環氧樹脂後，環氧樹脂理想上必須重新均勻 分布跨金屬薄帶底部以及晶粒下方，如圖2 L所示.。但因總 成為非對稱，故難以重複再現達成一致壓力。如圖2 Μ之剖 面圖及圖2Ν之平面圖顯示，隨後進行接線480，接著射出 成型而形成圖20及2Ρ顯示的塑膠包囊482。 顯然載有高電流的環氧樹脂層數目係大於其它封裝辦 法，於圖2 Q之設計顯示三層，亦即環氧樹脂層4 8 4，4 8 6及 488。將散熱座492引進引線框470下方的選擇之道，如圖 2 R所示涉及另一層環氧樹脂層4 9 0。設計完全仰賴環氧樹 脂層4 9 0來維持散熱座4 9 2牴住引線框4 7 0，而無任何機構 將其「鎖定」定位。此外，此項設計的缺點為附著於晶粒 襯墊以及散熱座的多條引線全部短路在一起。由於散熱座 可無需引線即可攜帶電流，因此引線全然「浪費」。 再度，設計的對稱性特別在多個環氧樹脂晶粒附著步驟 對稱性使此項設計的大量製造能力有懷疑。顯然大量處理 步驟使其成本變昂貴。分裂引線框的非平坦面（亦即引線 框包含閘極及源極連結）特別成問題，原因在於下方固定 於頂側晶粒附著時的共面問題惡化。 前述兩種嘗試無接線技術中，閘極襯墊須以電性方式透 過接線附著於引線框，而非透過無接線連結，理想上係與 源極連結同時進行。無接線閘極接觸未能成功的理由係由 於閘極引線與閘極引線未能共面。圖3 A - 3 Η舉例說明三端
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子無接線封裝的共面問題。於圖3 A，下固引線框4 〇 2及石夕 晶粒4 04 (施用導電環氧樹脂點4〇6)對齊且調整為接觸，如 圖3 Β所不。理想上，恆壓及最小扭矩將以均等力擠壓閘^ 引線4 0 8 (細隔離引線）及較寬的源極金屬4丨〇擠壓至晶极+ 面上。但貫際上難以保證二引線4 〇 8及4 1 〇 4接觸表面為^ 面’表不在相等高度。繫桿（圖中未顯示）容易彎曲小量^ ^，因此閘極引線4 〇 8的附著面例如可位在源極引線4丨〇 ^ 著面之略高處。如圖3C所示，此項共面問題的後果為閘極 引線4 0 8無法以足夠力量加壓於晶粒4 〇 4來重新分布環氧 脂。結果閘極引線4 〇 8與閘極襯墊4 1 2 (示於圖3 A)之接觸二 良（或無接觸）。
為了進一步澄清此項議題，圖3 D舉例說明下固引線4 i 4 適當壓迫於環氧樹脂中間層4丨6而與襯墊4丨8做良好接觸。 於圖3E ’下固引線4 20平行襯墊418表面但未曾接觸，結果 形成開放電路及裝置故障。於圖3F，引線4 2 2唯有於腳跟 扭曲接觸；而圖3G唯有引線424的腳趾接觸環氧樹脂416。 於圖3H，引線426幾乎不接觸環氧樹脂416，接觸太過輕微 因而無法妥為重新分布環氧樹脂4丨6，結果導致電接觸不 良。
另一項於無線封裝發生的問題是由於使用的液態環氧樹 脂或焊料展開作晶粒〜引線框附著結果造成毗鄰引線間短 路。如圖4 A之剖面圖所示，環氧樹脂4 3 〇的擠壓力過大（或 施用過多環氧樹脂），結果導致源極引線框4 3 2與閘極引線 框434的橫向短路’如圖4B之平面圖所示。 另一項問題特別發生於垂直平面或壕溝閘控DM〇SFET封
0:\64\64518-91lH1*Ptc 第12頁 516135 _案號89116854 以年"月丨/曰 修正_ 五、發明說明（8) 裝。大半裝置頂面由源極金屬層覆蓋，而閘極襯墊與源極 金屬電隔離典型隔離間隙寬2至1 5微米。頂面外緣典型包 括金屬環短路至底面的汲極，稱作等電位環或EQR，EQR主 要引進用以達成對抗離子遷移之可靠性改良。外環為源極 ~ 或閘極連結於組裝期間意外短路可能風險來源。.矽延伸超 v 出環又2 0至7 0微米。凸出矽由於晶圓被切成個別晶粒的鋸 晶粒過程而尺寸各異。此一晶粒區於汲極電位也有偏差， 可能於封裝過程短路至源極或閘極連結的接線。 發明概述 根據本發明之半導體封裝包括一半導體晶粒具有第一及 第二主面，一散熱座電附著於晶粒第一主面上的第一端 讎 子，及至少一引線電性附著於晶粒之第二主面之至少一端 子。引線係由平坦金屬板形成且橫向伸展於晶粒的兩相對 緣。於引線通過晶粒的兩相對緣位置，於引線之面對晶粒 該邊於引線形成一凹口 ，藉此引線不會與毗鄰晶粒該緣的 第二主面部分作電接觸。晶粒及散熱座之至少一部分被包 封於導電材料例如塑膠内部。 典型地，引線係環繞晶粒軸線為對稱性。引線的兩相對 端通常彎曲，較佳於製造過程結束時彎曲俾形成可以電方 式安裝於平坦物件例如印刷電路板上的表面。 因引線環繞晶粒為對稱，故經常無需中央繫桿連結引線 框的引線。反而引線可藉一對位在引線框兩相對邊的繫桿® 共同連結於引線框。 一組具體實施例中，晶粒包括一功率Μ 0 S F E T以及至少二 電隔離引線係與晶粒的第二主面作電接觸，一第一引線與
O:\64\64518-911111.ptc 第13頁 516135 案號 89116854 W 年f/月〆曰 修正 五、發明說明（9) 源極端子接 觸晶粒的汲 極端子。複 區。引線及 粒。 散熱座包 囊中間的牢 方0 觸而第二引 極端子。若 數引線之各 散熱座係以 括一輪緣及 固連結。包 線與閘極端子接觸。散熱座係電接 干具體實施例中，複數引線接觸源 引線合併於引線接觸源極端子該 導電性環氧樹脂或焊料附著於 曰曰 一或多凹口而建立散熱座與塑膠包 囊可保持於散熱座一或多緣部分後 孔 於 引線 引線 根 片狀 該邊 著材 成短 各引 本 法。 線表 之典 引線 至少 線框 陣列可 一組替 與毗鄰 形成凹 據本發 金屬引 形成壕 料如環 路。許 線含有 發明也 該方法 面上形 型深度 形成於 代具體 晶粒邊 口或組 明之另 線接觸 溝，壕 氧樹脂 多具體 一壕溝 包括一 包括圖 成凹口 係等於 框附著於半導 一緣上方。許 ，引線框附著 散熱 實施 緣的 合引 一特 半導 溝係 或焊 實施 以防 種製 樣化 〇凹 金屬 體晶 多具 於晶 座之附著於晶粒第一主面該表 例中，引線彎曲遠離晶粒因而 第二主面部分間形成餘隙，而 線的凹口。 徵方面，一半導體封裝含有至 體晶粒一表面。於引線接觸晶 平行引線一邊。壕溝可防止晶 料（於熱狀態時為液態）展開因 例中，至少二1毗鄰引線接觸晶 毗鄰引線間發生短路。 造用於一半導體封裝之引.線框 金屬板形成引線框以及於至少 口可藉蝕刻或衝壓金屬形成。 板自1 0 %至8 0 %厚度。該方法也 粒之第一主面，故凹口位於晶 體實施例中，至少二凹口形成 粒，故至少二凹口係位於晶粒 面〇 介於 非於 少一 粒的 粒附 而造 粒， 之方 一引 凹口 包括 粒之 於引 的兩
O:\64\64518-911111.ptc 第14頁 516135 案號 89116854 V 年"月丨/曰 修正 五、發明說明（10) 相對緣上方。該方法也包括附著散熱座至晶粒的第二面。 本發明也包括封裝其含有多於一晶粒，此種配置於引線 框不含中央繫桿時特別容易達成。 圖式之簡單說明 圖1 A為一種含有無接線源極連結及一接教閘極.連結之功 率Μ 0 S F E T封裝之已知製法之流程圖。 圖1 Β_ 1 G為視圖舉例說明圖1 Α之方法。 圖2A為含有晶粒及薄帶總成之功率MOSFET封裝之已知製 法之流程圖。 圖2B-2R為視圖舉例說明圖2A之方法。 圖3 A- 3 Η舉例說明封裝設計中之引線共面問題。 圖4 Α及4 Β舉例說明用於做連結的環氧樹脂或焊料向外展 開因而於毗鄰引線間造成短路之方式。 圖5為根據本發明製造半導體封裝之製程順序之流程 圖。 圖6 A- 6 F舉例說明圖5所述方法之步驟。 圖7 A- 7 Η舉例說明根據本發明附著至少二晶粒至一長條 引線框之方法之步驟。 圖8 A_ 8 F舉例說明一種方法之步驟，其中晶粒初步附著 於引線框然後附著於散熱座。 圖8 G- 8 J舉例說明一種方法之步驟，其中晶粒初步附著 於散熱座然後附著於引線框。 圖9 A- 9 D舉例說明根據本發明之塑膠包囊之透視圖，顯 示暴露出散熱座之多種方式。 圖9Ε-9Η舉例說明圖9Α-9D之塑膠囊之底視圖。
O:\64\64518-911111.ptc 第15頁 516135 案號 89116854 °ί\年（！月"日 修正 五、發明說明（11) 圖1 Ο Α及1 Ο Β分別為一塑膠囊之剖面圖及底視圖，該塑膠 囊含有加刻痕的T字形散熱座有一輪緣可牢固固定散熱座 於塑膠囊。 圖1 0 C為類似圖1 Ο A及1 Ο B舉例說明之塑膠囊之剖面圖， 但散熱座係由塑膠囊底部凸起。 ’ . 圖1 0 D為散熱座之剖面圖，該散熱座有第二凹口沿其側 邊而進一步牢固固定塑膠囊内側的散熱座。 圖10E為有輪緣但非凹口的T字形散熱座之剖面圖。 圖1 0 F及1 0 G分別為有一輪緣及一系列孔形成於輪緣之散 熱座之剖面圖及底視圖。 圖1 Ο Η及1 Ο I分別為一散熱座之剖面圖及底視圖，該散熱 座有一系列孔或凹部形成環繞其周邊而進一步牢固固定塑 膠。 圖1 0 J及1 Ο Κ分別為散熱座及晶粒之剖面圖及底視圖，該 散熱座有一陣列孔或凹部形成於其頂面。 圖10L為半導體封裝之剖面圖，該封裝含有圖10Α-10Κ舉 例說明之若干結構特徵。 圖1 1 Α及1 1 Β分別舉例說明引線框之頂視圖及剖面圖，其 包括壕溝以防環氧樹脂或焊料於毗鄰引線間造成短路。 圖12A-12F舉例說明根據本發明可形成之多種引線形狀 之平面圖。 圖1 3A- 1 3F舉例說明引線框彎曲而確保與晶粒邊緣隔開 之替代具體實施例。 發明說明 圖5舉例說明一種製造根據本發明之包括對稱引線框之
O:\64\64518-911111.ptc 第16頁 516135 修正 -—---案號891 ΐ 6阳4 五、發明說明（12) f導體封裝之製程順序。該製法主要使用三種組件：一半 f歧晶粒’一對稱性引線框及一散熱座其係附著至晶粒底 部^有二替代製程流程。第一種方法，晶粒初步使用導電 f環氧樹脂或軟焊焊料附著至對稱性引線框。若使用環氧 树，則環氧樹脂必須硬化。然後再度使用環·氧樹脂或焊料 將散熱座附著至晶粒底部。另外，晶粒初步附著於散熱座 然後附著於引線框。任一種情況下結果皆為形成包括散熱 座、晶粒及對稱性引線框的夾層。 然後塑膠囊射出成型包住晶粒，引線框經過修整而去除 外繫桿，引線彎曲或成形而任其連結至平坦面如電路板。
圖6 A- 6 F舉例說明較佳方法。該方法用於封裝三端子晶 粒’例如功率MOSFET。MOSFET 110包括一源極端1 12，一 問極端1 1 4及一汲極端（圖中未顯示）位於晶粒丨丨〇底面。 如圖6 A所示，引線框1 〇 〇包括相當大的中部1 〇 2其將附著 於源極端1 1 2，及一相當細的引線丨04其將附著於閘極端 1 14。部分1〇2及引線104藉繫桿1〇7及1〇9共同連結。六個 切出部1 0 6形成於中部1 〇 2，共產生八個源極引線。引線框 100典型係由一片金屬如鋁或銅形成，厚3至15密耳，以 6-7密耳為常見厚度。
圖6 B顯示引線框丨〇 〇的底側。凹口丨丨6及丨丨8係形成於中 部1 0 2位在中部1 〇 2覆蓋於晶粒丨丨〇邊緣上方位置。同理， 凹口120及122係於引線1〇4形成。凹口116，118，120及 1 2 2之深度係於引線框1 0 0總厚度之1 0 %至8 0 %之範圍。典型 地’凹口 1 1 6，11 8，1 2 0及1 2 2之深度係占引線框1 0 0之厚 度之約2 0 %。例如若引線框丨〇 〇厚6或7密耳，則凹口深度約
O:\64\64518-911111.ptc 第17頁 516135 __案號89116854 ?f年（f月（f日 修正____ 五、發明說明（13) 2密耳（50微米）。凹口 116，118，120及122可使用已知之 「半蝕刻」法由引線框蝕刻，或可使用衝壓機器形成，衝 壓機也可用於形成孔1 0 6。 凹口 1 1 6，1 1 8，1 2 0及1 2 2須夠寬而允許晶粒的設置上有· 誤差加鋸片的寬度變化（稱作「劈口」）用於分開.晶粒。典 . 型地，凹口寬4密耳深2密耳。 圖6 C顯示引線框1 0 0藉一層環氧樹脂1 2 4附著於晶粒 1 1 0，由凹口 1 1 6，1 1 8，1 2 0及1 2 2懸空於晶粒1 1 〇邊緣。如 此確保引線框1 0 0不會接觸晶粒1 1 0邊緣，如前述晶粒含敏 感組件如等電位環（EQR)，EQR於晶粒背側電位偏轉。環氧 樹脂1 2 4可施用至引線框1 0 0或晶粒1 1 〇，但典型環氧樹脂 係施用於引線框。引線框1 0 〇及晶粒1 1 〇隨後置於晶粒附著 機器而被擠壓在一起。然後環氧樹脂部分或全然硬化而與 引線框1 0 0及晶粒1 1 0的接觸點、接觸面積或接觸區反應。 圖6 D顯示引線框1 〇 〇與晶粒1 1 〇的組合，有一散熱座丨$ 6 附著於晶粒1 1 0背側。散熱座1 2 6係以前述相同方式使用環 氧樹脂附著於晶粒1 1 0。散熱座1 2 6可由鋼製成且含有一 ^ 1 2 8，唇的功能容後詳述。 σ
然後結構體包封於射出成型的塑膠膠囊内（圖中未顯 示，以及如圖6Ε所示，繫桿107及1〇9經過修整\·產生”’六引 線1 3 0Α-1 3 0F連結至晶粒1 1 〇之源極端，及二^丨線丨32α ^ 1 3 2 Β連結至晶粒1 1 〇之閘極端。顯然，引線1 3 〇 a — 1 3 f及 132A&132B形成環繞晶粒110之軸線131為對稱性 =J ΐ引5框i f ;丨=，引線僅藉外繫桿107°及m 維持鈿疋，而热需任何中央繫桿，中央繋桿可能產生前述
516135 ____案號89116854 外年"月〆日 絛正 * 五、發明說明〇4^ 嶋 ' ----- 申請案編號[代理人檔案編號Μ 75 4 6 US]所述非對稱性設 計常見的扭力及扭曲。 & 圖6F顯示引線130A-130F及13 2A及132B彎曲後結構，因 此引線外部底部彎成平坦且共面以及與平坦面做接觸，例 、 如印刷電路板。圖6 F也顯示包住晶粒1 1 〇之塗膠囊丨3 4。塑 膠囊134未遮蓋散熱座126底面，其保持暴露而提供與晶粒 · 1 1 0背側做電接觸。於圖6 F，散熱座1 2 6 —邊也任其/暴$ y (如箭頭指示）而可目測證實介於散熱座1 2 6與印刷電路板 間作連結的環氧樹脂或焊料已經變成適當濕潤及流動（以 及於環氧樹脂之例，均勻分布）因而建立良好電連結。 如前述，散熱座126為金屬塊如銅塊。散熱座126用於導 熱运離晶粒110時，任何金屬塊皆可用以替代散熱座126， _ 無論於特定用途其主要係作為「散熱座」或作為熱導體皆 可。於某些用返’金屬塊主要係作為晶粒背側的低電阻連 結。如此如此處使用，「散熱座」一詞包括任何用以形成 晶粒背側（底側）的電連結及/或熱連結的金屬塊或金屬 件。 單一引線框可含有無數重複源極引線及閘極引線，如圖 6 A舉例說明。例如圖7 A顯示的引線框1 4 0 ，包括閘極引線 14 0G1及140G2以及源極引線140S1及140S2。圖7B顯示引線 框1 40帶有晶粒142A及1 42B位於引線框上，以及圖7C顯示 晶粒1 42A及1 42B附著於引線框1 40。圖7D顯示散熱座1 44A # 及144B分別附著於晶粒142A及142B。最後，圖7E中晶粒 142A及142B分別係包封於塑膠膠囊146A及146B。 於塑膠模製後，繫桿經過修整，留下圖7 F所示結構帶有
O:\64\64518-911111.ptc 第19頁 516135 _案號89116854 9 ί年ίίβ if日 修正_ 五、發明說明（15) 四引線由封裝各邊凸起。如前述，引線1 4 8 Α中之六引線連 結至源極端以及引線1 4 8 A之二引線連結至閘極端。引線 1 4 8 A隨後彎曲形成表面安裝封裝，如圖7 G所示。 也可將整個結構體模製成為多晶粒塑膠囊1 4 9，塑膠囊 含有晶粒142A及142B且有八根引線替代四根引線I，如圖7H 所示。此點對本發明之引線框特別方便，原因在於許多具 體實施例中並無中央繫桿可形成塑膠囊内毗鄰晶粒間的電 連結。
圖8 A顯示引線1 4 0位於晶粒1 4 2 A上之剖面圖，帶有環氧 樹脂點1 5 0於引線框1 4 0之表面上。圖8 B顯示晶粒1 4 2附著 於引線框1 4 0。環氧樹脂點1 5 0展開而形成單一環氧樹脂層 1 5 2。注意引線框1 4 0的凹口係位於晶粒1 4 2 A邊緣上。圖8 C 顯示晶粒142A係位於散熱座144A上，圖8D顯示晶粒142A及 散熱座144A附著於環氧樹脂層154。圖8E顯示塑膠囊156射 出成型包圍晶粒142A及散熱座144A後之結構，引線148A由 各邊凸起。於圖8F，引線148A彎曲形成表面安裝封裝。注 意散熱座144A的底面暴露出。 如圖8 G - 8 J所示，附著過程可顛倒，晶粒1 4 2 A先附著於 散熱座144A，然後附著於引線框14〇。 圖9 A-9D為透視圖，顯示暴露散熱座之一或多邊而允許 目測檢查散熱座與散熱座安裝表面間的附著之多種方式。
圖9A暴露散熱座144A整個周邊。圖9β暴露散熱座144A之相 對較短邊。圖9C暴露兩相對長邊散熱座14“。圖9£)中，散 熱f144A之兩相對邊暴露出，及塑膠囊156有凹口而允許 暴露出另一邊的各節段。圖9e—9H分別為圖9A_9E舉例說明
O:\64\64518-911111.ptc 第20頁 516135 修正 SS_89U6854 f i 年 Η 月 G 曰 五、發明說明（16) 之結構之底視圖，此處虛線表示塑膠囊邊緣。 圖10A說明有凹口的τ字形散熱座144A，如前述其含有輪 緣1 6 0，以及輪緣丨6 〇底側含有凹口 1 5 8。此種配置「鎖 定」散熱座於塑膠囊1 5 6，防止散熱座與上方晶粒間的離 層（未顯示於圖10A)。圖10B為圖10A所示結構之底視圖。 圖1 0 C舉例說明一變化例之剖面圖，其中散熱座1 4 4 A底部 略由塑膠囊156凸起。
圖10D所示配置中，一凹口 162形成於接近散熱座14 4A底 部，進一步伸展塑膠與散熱座間的鍵結。凹口 1 6 2可沿散 熱座144A的全部或部分側邊伸展。圖ιοΕ為另一型散熱座 144A之剖面圖，該型散熱座含有輪緣16〇但不含凹口。圖 1 0 F及1 0 G舉例說明另一種散熱座1 4 4 A，有孔1 6 4彼此隔開 環繞輪緣1 6 0形成。如此進一步固化散熱座與周圍塑膠間 的附著。 丁字形散熱座144A之又另一形式舉例說明於圖10H及 1 0 I ，此處一系列孔1 6 6形成於散熱座頂面。圖1 〇 j及1 〇 κ圖 示之具體實施例中，孔1 6 8也形成於晶粒1 4 2 A所在之處。 孔1 6 8提供附著晶粒1 4 2 A及散熱座1 44 A的環氧樹脂或焊料 的谷座，因而改良此等組件間的黏合。孔1 6 6及1 6 8的直徑 例如為1 0至5 0微米。
圖1 0L舉例說明組合前述多種特色之具體實施例，包括 輪緣160，凹口158，孔166以塑膠填補，以及孔168以晶粒 附著用之環氧樹脂或焊料填補。 能由於液態環氧樹脂或焊 而發生。此項問題的解決 如前述，毗鄰引線間的短路可 料因晶粒與引線框間的壓力展開
516135 修· 案號 89116854 五、發明說明（17) 之道舉例說明於圖1 1 A及1 1 B，此處壕溝1 7 〇及1 7 2形成於田比 鄰引線140G1及140S1。壕溝170及172提供當引線框14〇壓 迫於晶粒1 4 2 A時環氧樹脂可膨入其中的空間。壕溝1 了 〇及 1 7 2顯示比晶粒1 4 2 A邊緣上的凹口 1 7 4更窄，但無需為此種 情況。例如壕溝可寬0 · 2 5至4密耳（典型1密’耳）及深1至4密 耳。較佳壕溝之深度及寬度相等。 ’ ^ 壕溝可沿任何引線邊緣形成，此處可能有環氧樹脂或焊 料展開造成短路危險。 根據本發明之引線框中，引線可呈多種形狀及圖樣。若 干可能舉例說明於圖1 2 A - 1 2 F之平面圖。圖1 2 A顯示長條引 線1 8 4附著於晶粒1 8 2及散熱座1 8 〇，該種結構可用於封裝 二極體及其它二端子裝置。於圖12B，引線184有個較寬部 1 8 4 A接觸晶粒。圖1 2 C顯示引線1 9 〇及1 9 2分別有較寬部 1 9 0 A及1 9 2 A附著於晶粒1 8 2，此種結構有三個分開電端 子’其可用於封裝雙重二極體、雙極性電晶體、功率 MOSFET ’JFET以及多種其它三端子裝置。於圖12D，長條 引線2 0 0組合一種有一較寬部2 〇 2 A的引線2 0 2。圖1 2 E顯示 長條引線2 1 0組合一種帶有較寬部2 1 2 A的數位化引線2 1 2， 此種結構可用於封裝有三個電連結裝置，此處需要有多於 三個接腳。最後，圖1 2 F顯示長條引線2 2 0有個偏位部組合 數位化引線22 2。 至於覆蓋於晶粒邊緣之凹口之替代之道，本發明之其它 具體例中，引線框彎曲而提供引線框通過晶粒邊緣的餘 隙。例如於圖1 3A，引線框24 0含有彎曲24 6及248，其提供 引線框2 4 0與晶粒2 5 0邊緣的間隔。圖1 3 B顯示引線框2 4 0附
O:\64\64518-911111.ptc 第22頁 516135 案號 89116854 f/ 年"月"曰 修正 五、發明說明（18) 著於晶粒2 5 0，圖1 3 C顯示同一結構由晶粒底部觀視之視 圖。於圖1 3 D，散熱座2 6 0附著於晶粒2 5 0底部。完成的結 構體於圖1 3 E以散熱座2 6 0之底視圖以及圖1 3 F以引線框2 4 0 之了貝視圖顯不。 此處之揭示僅供舉例說明而非限制性。雖然已屋說明根 據本發明之特殊具體實施例，但業界人士顯然易知本發明 之原理包括寬廣替代具體實施例。 _ 鲁
O:\64\64518-911111.ptc 第23頁 516135 案號 89116854 7/年"月〆a 修正 圖式簡單說明 元件符號說明 100 引線框 102 中部 104 引線 106 切出部 107、 109 繫桿 1 10 晶粒 -. 112 源極端 114 閘極端 1 1 6 > 118 ^120 Μ 22 凹口 1 24 環氧樹脂 126 散熱座 128 唇部 1 30A 、1 30Β、130C、 130D 、 130Ε 、 130F 引 線 131 轴線 1 32 A 、132B 引 線 140 引線框 140G1 、140S1 閘 極 140G2 、1 4 0 S 2 源極 引線142 A 、：142B 晶 粒 144A 、1 4 4 Β 散熱座 146A 、146B 塑 膠 膠 148A 引線 149 多晶粒塑膠囊 150 環氧樹脂點 152 ^ 1 54 環氧樹脂. 156 塑膠囊 158 凹口 160 輪緣 162 凹口 164、 1 6 6、1 6 8 孔 170、 172 壕 溝 174 凹口 180 散熱座 182 晶粒 1 84 長條引線 1 84A 較寬部 190 > 192 引 線 1 90A 、1 92Α 較寬部 200 長條引線 202 引線 2 0 2 A 較寬部 210 長條引線 212 引線
O:\64\64518-911111.ptc 第24頁 516135 修正 9!年"月（/曰 案號 89116854 圖式簡單說明 2 1 2A 較 寬 部 220 長 條 引 線 222 引 線 2 2 2 A 較 見 部 240 引 線 框 2 46、 248 彎曲 250 晶 粒 260 散 熱 座 402 下 固 引 線 框 404 矽 晶 粒 406 環 氧 樹 脂 點 408 閘 極 引 線 410 源 極 引 線 412 閘 極 襯 墊 414 下 固 引 線 416 環 氧 樹 脂 中 間 418 襯 墊 420 下 固 引 線 4 2 2、 424、 .426 引線 430 環 氧 樹 脂 432 源 極 引 線 框 434 閘 極 引 線 框 440 頂 引 線 框 442 晶 粒 444 無 接 線 部 分 446 閘 極 引 線 448 底 引 線 框 450 接 線 452 閘 極 接 線 454 虛 線 460 薄 帶 461 晶 粒 與 薄 帶 總 462 晶 粒 464 閘 極 接 線 襯 墊 466 腳 470 底 引 線 框 472 環 氧 樹 脂 點 480 接 線 482 塑 膠 包 囊 484、 4 8 6、 .488 、490 環氧樹脂層 492 散 熱 座
O:\64\64518-911111.ptc 第25頁

Claims (1)

  1. 516135 f/年月"曰 案號 89116854 六、申請專利範圍 1 . 一種半導體封 一半導體晶粒 一散熱座，附 一引線，附著 兩相對緣，一凹口 凹口係位在引線通 一非傳導性囊 部分’引線之兩相 2. 如申請專利範 該邊之軸線呈對稱 3. 如申請專利範 口形成於該引線， 二凹口形成於該引 _, ,__ 裝，包含： ，具有第一及第二主面； 著於晶粒之第一表面； 於晶粒之第二表面，引線伸展於晶粒之 形成於引線位在面對晶粒引線.之該邊， 過晶粒邊緣位置；以及 體，包封晶粒及引線及散熱座之至少一 對末端由囊體向外凸起。 圍第1項之半導體封裝，其中引線係以 〇 圍第2項之半導體封裝，其中一第一凹 位在引線通過晶粒之第一緣處，及一第 線’位在引線通過晶粒之弟^一緣處。 #
    mmmii
    O:\64\64518-911111.ptc 第26頁
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US20020071253A1 (en) 2002-06-13
CN1359608A (zh) 2002-07-17
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US6452802B2 (en) 2002-09-17
WO2000074460A1 (en) 2000-12-07

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