TW504041U - Wafer processing apparatus - Google Patents

Wafer processing apparatus

Info

Publication number
TW504041U
TW504041U TW090218651U TW90218651U TW504041U TW 504041 U TW504041 U TW 504041U TW 090218651 U TW090218651 U TW 090218651U TW 90218651 U TW90218651 U TW 90218651U TW 504041 U TW504041 U TW 504041U
Authority
TW
Taiwan
Prior art keywords
processing apparatus
wafer processing
wafer
processing
Prior art date
Application number
TW090218651U
Other languages
English (en)
Inventor
Fumio Uehara
Kiyofumi Sakaguchi
Kazutaka Yanagita
Masakazu Harada
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03808097A external-priority patent/JP3831878B2/ja
Priority claimed from JP03807997A external-priority patent/JP3831877B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW504041U publication Critical patent/TW504041U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW090218651U 1997-02-21 1998-02-10 Wafer processing apparatus TW504041U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03808097A JP3831878B2 (ja) 1997-02-21 1997-02-21 ウェハ処理装置
JP03807997A JP3831877B2 (ja) 1997-02-21 1997-02-21 半導体基体の製造方法

Publications (1)

Publication Number Publication Date
TW504041U true TW504041U (en) 2002-09-21

Family

ID=26377262

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090218651U TW504041U (en) 1997-02-21 1998-02-10 Wafer processing apparatus

Country Status (8)

Country Link
US (1) US6199563B1 (zh)
EP (1) EP0860860A3 (zh)
KR (2) KR100306054B1 (zh)
CN (1) CN1111900C (zh)
AU (1) AU742258B2 (zh)
CA (1) CA2229975C (zh)
SG (1) SG63810A1 (zh)
TW (1) TW504041U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI744988B (zh) * 2020-07-17 2021-11-01 禾邑實業股份有限公司 清洗及蝕刻裝置

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CN102247928A (zh) * 2011-05-11 2011-11-23 江西旭阳雷迪高科技股份有限公司 一种过滤装置及其过滤工艺
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CN106925565B (zh) * 2017-02-09 2018-08-24 同济大学 一种lbo晶体的刻蚀清洗方法
CN106824884A (zh) * 2017-03-31 2017-06-13 贵州大学 一种硅片翻转冲洗装置
CN107946229B (zh) * 2017-11-21 2021-01-26 长江存储科技有限责任公司 用于晶圆刻蚀的升降装置
CN107968060B (zh) * 2017-11-21 2020-05-12 长江存储科技有限责任公司 用于晶圆刻蚀的反应槽
CN108480305A (zh) * 2018-04-12 2018-09-04 绍兴文理学院 一种光伏硅片清洗设备
CN109371456B (zh) * 2018-10-17 2021-01-08 山东博达光电有限公司 人造石英晶体籽晶片的腐蚀装置及腐蚀方法
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CN109604251B (zh) * 2018-12-29 2022-04-05 西安奕斯伟材料科技有限公司 一种清洗装置及清洗方法
CN109759937A (zh) * 2019-01-30 2019-05-17 西安奕斯伟硅片技术有限公司 一种硅片的处理方法和装置
CN110369390A (zh) * 2019-07-05 2019-10-25 上海提牛机电设备有限公司 一种陶瓷盘360度旋装置
CN110739247A (zh) * 2019-09-19 2020-01-31 上海提牛机电设备有限公司 一种晶圆蚀刻槽
CN110660662B (zh) * 2019-10-08 2021-02-02 江苏晟驰微电子有限公司 一种新型硅腐蚀工艺
CN110813888A (zh) * 2019-10-30 2020-02-21 苏州晶洲装备科技有限公司 一种掩模版清洗装置和掩模版清洗方法
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JP7381370B2 (ja) * 2020-03-05 2023-11-15 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
CN112371619B (zh) * 2020-10-22 2022-04-05 华帝股份有限公司 用于烹饪设备的清洁控制方法及应用其的烹饪设备
CN115156182B (zh) * 2022-07-01 2023-05-16 青岛凯瑞电子有限公司 一种镀镍用超声波清洗装置

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Publication number Priority date Publication date Assignee Title
TWI744988B (zh) * 2020-07-17 2021-11-01 禾邑實業股份有限公司 清洗及蝕刻裝置

Also Published As

Publication number Publication date
KR100306054B1 (ko) 2001-11-02
US6199563B1 (en) 2001-03-13
SG63810A1 (en) 1999-03-30
CA2229975A1 (en) 1998-08-21
CA2229975C (en) 2003-02-18
KR19980071560A (ko) 1998-10-26
AU742258B2 (en) 2001-12-20
EP0860860A2 (en) 1998-08-26
CN1191385A (zh) 1998-08-26
EP0860860A3 (en) 2001-11-28
CN1111900C (zh) 2003-06-18
AU5537098A (en) 1998-08-27
KR100347824B1 (ko) 2002-08-07

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004