TW501177B - Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon - Google Patents

Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon Download PDF

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Publication number
TW501177B
TW501177B TW090112579A TW90112579A TW501177B TW 501177 B TW501177 B TW 501177B TW 090112579 A TW090112579 A TW 090112579A TW 90112579 A TW90112579 A TW 90112579A TW 501177 B TW501177 B TW 501177B
Authority
TW
Taiwan
Prior art keywords
silicon wafer
patent application
wafer
item
crystal
Prior art date
Application number
TW090112579A
Other languages
English (en)
Chinese (zh)
Inventor
Jae-Gun Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW501177B publication Critical patent/TW501177B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW090112579A 1999-11-13 2001-05-25 Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon TW501177B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19990050467 1999-11-13
KR10-2000-0057344A KR100378184B1 (ko) 1999-11-13 2000-09-29 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러

Publications (1)

Publication Number Publication Date
TW501177B true TW501177B (en) 2002-09-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW090112579A TW501177B (en) 1999-11-13 2001-05-25 Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon

Country Status (4)

Country Link
JP (6) JP4685231B2 (de)
KR (1) KR100378184B1 (de)
DE (2) DE10055648B4 (de)
TW (1) TW501177B (de)

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JP4055343B2 (ja) * 2000-09-26 2008-03-05 株式会社Ｓｕｍｃｏ シリコン半導体基板の熱処理方法
JP2002110685A (ja) * 2000-09-27 2002-04-12 Shin Etsu Handotai Co Ltd シリコンウェーハの熱処理方法
JP4567251B2 (ja) * 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
JP4549589B2 (ja) * 2001-09-14 2010-09-22 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
KR100445190B1 (ko) * 2001-11-13 2004-08-21 주식회사 실트론 단결정 실리콘 잉곳 제조 방법
DE10205084B4 (de) 2002-02-07 2008-10-16 Siltronic Ag Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe
JP2003257984A (ja) * 2002-03-05 2003-09-12 Sumitomo Mitsubishi Silicon Corp シリコンウェーハ及びその製造方法
KR20040007025A (ko) * 2002-07-16 2004-01-24 주식회사 하이닉스반도체 반도체 웨이퍼 제조 방법
JP2004107132A (ja) * 2002-09-18 2004-04-08 Sumitomo Mitsubishi Silicon Corp シリコン単結晶引上げ装置の熱遮蔽部材
JP4853027B2 (ja) * 2006-01-17 2012-01-11 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP5239155B2 (ja) 2006-06-20 2013-07-17 信越半導体株式会社 シリコンウエーハの製造方法
DE102007009281B4 (de) * 2007-02-26 2013-03-14 Infineon Technologies Austria Ag Verfahren zum Erzeugen von Materialausscheidungen und Halbleitermaterialscheibe sowie Halbleiterbauelemente
JP5167654B2 (ja) 2007-02-26 2013-03-21 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JPWO2009151077A1 (ja) * 2008-06-10 2011-11-17 株式会社Sumco シリコン単結晶ウェーハの製造方法およびシリコン単結晶ウェーハ
JP5590644B2 (ja) * 2009-03-09 2014-09-17 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
JP5578172B2 (ja) 2009-04-13 2014-08-27 信越半導体株式会社 アニールウエーハの製造方法およびデバイスの製造方法
JP5439305B2 (ja) 2010-07-14 2014-03-12 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板
DE102010041639A1 (de) * 2010-09-29 2012-03-29 Wacker Chemie Ag Verfahren zur Reinigung von Polysilicium-Bruchstücken
JP5572569B2 (ja) 2011-02-24 2014-08-13 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板
JP5825931B2 (ja) * 2011-08-25 2015-12-02 グローバルウェーハズ・ジャパン株式会社 固体撮像素子の製造方法
JP5621791B2 (ja) 2012-01-11 2014-11-12 信越半導体株式会社 シリコン単結晶ウェーハの製造方法及び電子デバイス
JP6044660B2 (ja) 2015-02-19 2016-12-14 信越半導体株式会社 シリコンウェーハの製造方法
KR101759876B1 (ko) 2015-07-01 2017-07-31 주식회사 엘지실트론 웨이퍼 및 웨이퍼 결함 분석 방법
JP6704781B2 (ja) 2016-04-27 2020-06-03 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ
JP6716344B2 (ja) 2016-06-01 2020-07-01 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
JP7078496B2 (ja) * 2018-08-30 2022-05-31 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法

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Also Published As

Publication number Publication date
JP2009016864A (ja) 2009-01-22
JP4975703B2 (ja) 2012-07-11
JP4685231B2 (ja) 2011-05-18
DE10055648B4 (de) 2014-10-23
DE10066207B4 (de) 2013-08-01
JP2006287247A (ja) 2006-10-19
DE10055648A1 (de) 2001-08-16
KR100378184B1 (ko) 2003-03-29
KR20010078701A (ko) 2001-08-21
JP2009021623A (ja) 2009-01-29
JP2006287246A (ja) 2006-10-19
JP2001203210A (ja) 2001-07-27
JP4975704B2 (ja) 2012-07-11
JP2009040681A (ja) 2009-02-26

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