JP5825931B2 - 固体撮像素子の製造方法 - Google Patents
固体撮像素子の製造方法 Download PDFInfo
- Publication number
- JP5825931B2 JP5825931B2 JP2011184119A JP2011184119A JP5825931B2 JP 5825931 B2 JP5825931 B2 JP 5825931B2 JP 2011184119 A JP2011184119 A JP 2011184119A JP 2011184119 A JP2011184119 A JP 2011184119A JP 5825931 B2 JP5825931 B2 JP 5825931B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- polishing
- bulk layer
- solid
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 97
- 239000010410 layer Substances 0.000 claims description 96
- 239000004065 semiconductor Substances 0.000 claims description 96
- 238000005498 polishing Methods 0.000 claims description 89
- 239000002344 surface layer Substances 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 description 30
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 239000010408 film Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 12
- 238000001514 detection method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000004744 fabric Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229940038504 oxygen 100 % Drugs 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
少なくとも素子部形成領域の表面が鏡面研磨された直径8インチ、厚さ725μmのシリコン基板を準備した。このシリコン基板を周知の縦型熱処理装置の反応管内に投入し、アルゴンガス雰囲気にて、1350℃の温度で1時間保持する第1の熱処理を行った。次に、第1の熱処理を行ったシリコン基板を周知の急速昇降温熱処理装置の反応管内に投入し、酸化性ガス雰囲気(酸素100%ガス)にて、1200℃の温度で60秒間保持する第2の熱処理を行った。その後、第2の熱処理を行ったシリコン基板を周知の縦型熱処理装置の反応管内に投入し、アルゴンガス雰囲気にて、1100℃の温度で30分間保持する第3の熱処理を行った。
℃×16時間)を施した後、前記シリコン基板を劈開して、その劈開面をSEM観察した。その結果、シリコン基板の表面から5μmまでの深さ領域(表層部3a)はBMDが殆ど認められず、表層部3aから更に1μmの深さ領域には高密度のBMDが形成され(第1のバルク層4a)、更に、第1のバルク層4aから更に裏面2b側方向の深さ領域には、前記第1のバルク層4aより低密度のBMDの形成が確認された(第2のバルク層5)。
Claims (2)
- 表面側の表層部と、この表層部より裏面側方向内部に形成され、BMD密度が1×10 10 /cm 3 以上1×10 12 /cm 3 以下の第1のバルク層と、この第1のバルク層より裏面側方向内部に形成され、前記第1のバルク層よりBMD密度が低く、その密度が1×10 9 /cm 3 以上1×10 10 /cm 3 以下の第2のバルク層とを備える半導体基板を用いて固体撮像素子を製造する方法であって、
前記半導体基板の表層部にフォトダイオードおよびトランジスタからなる半導体素子部を形成する工程と、
前記半導体素子部を含む前記表層部の表面に多層構造の配線部を形成する工程と、
前記半導体基板の配線部上に支持基板を貼り合わせる工程と、
前記半導体基板の裏面側からバック加工を行って、前記表層部と前記第1のバルク層の界面を終点として検出して、前記第1及び第2のバルク層が除去される厚さまで前記半導体基板を薄膜化する工程とを備えることを特徴とする固体撮像素子の製造方法。 - 前記バック加工における前記第1のバルク層の除去は、鏡面研磨であり、前記鏡面研磨中の研磨ヘッドの負荷電流値の変化により前記表層部と前記第1のバルク層の界面を研磨終点として検出することを特徴とする請求項1記載の固体撮像素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011184119A JP5825931B2 (ja) | 2011-08-25 | 2011-08-25 | 固体撮像素子の製造方法 |
TW101129192A TWI493701B (zh) | 2011-08-25 | 2012-08-13 | 固體攝像元件用半導體基板及使用它之固體攝像元件之製造方法 |
KR1020120090138A KR101392034B1 (ko) | 2011-08-25 | 2012-08-17 | 고체 촬상 소자용 반도체 기판 및 그것을 이용한 고체 촬상 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011184119A JP5825931B2 (ja) | 2011-08-25 | 2011-08-25 | 固体撮像素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013045978A JP2013045978A (ja) | 2013-03-04 |
JP5825931B2 true JP5825931B2 (ja) | 2015-12-02 |
Family
ID=48009629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011184119A Active JP5825931B2 (ja) | 2011-08-25 | 2011-08-25 | 固体撮像素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5825931B2 (ja) |
KR (1) | KR101392034B1 (ja) |
TW (1) | TWI493701B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI825178B (zh) | 2018-10-29 | 2023-12-11 | 日商索尼半導體解決方案公司 | 攝像裝置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503594B2 (en) * | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
KR100378184B1 (ko) * | 1999-11-13 | 2003-03-29 | 삼성전자주식회사 | 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러 |
JP2005353996A (ja) * | 2004-06-14 | 2005-12-22 | Sony Corp | 固体撮像素子とその製造方法、並びに半導体装置とその製造方法 |
JP4667030B2 (ja) * | 2004-12-10 | 2011-04-06 | キヤノン株式会社 | 固体撮像装置用の半導体基板とその製造方法 |
JP5568837B2 (ja) * | 2008-02-29 | 2014-08-13 | 株式会社Sumco | シリコン基板の製造方法 |
JP2010010615A (ja) * | 2008-06-30 | 2010-01-14 | Sumco Corp | 固体撮像素子用シリコン基板およびその製造方法 |
JP2011082443A (ja) * | 2009-10-09 | 2011-04-21 | Sumco Corp | エピタキシャルウェーハおよびその製造方法 |
-
2011
- 2011-08-25 JP JP2011184119A patent/JP5825931B2/ja active Active
-
2012
- 2012-08-13 TW TW101129192A patent/TWI493701B/zh active
- 2012-08-17 KR KR1020120090138A patent/KR101392034B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201314878A (zh) | 2013-04-01 |
KR101392034B1 (ko) | 2014-05-07 |
JP2013045978A (ja) | 2013-03-04 |
KR20130023090A (ko) | 2013-03-07 |
TWI493701B (zh) | 2015-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8524574B2 (en) | Method for manufacturing solid-state image pickup-device | |
JP2839801B2 (ja) | ウェーハの製造方法 | |
JP5487565B2 (ja) | エピタキシャルウェーハおよびその製造方法 | |
US20110089524A1 (en) | Semiconductor device and method of manufacturing the same | |
JP2009541990A (ja) | 背面照射型フォトダイオードを用いたイメージセンサ及びその製造方法 | |
US20110207246A1 (en) | Methods for reducing the width of the unbonded region in soi structures | |
TWI440169B (zh) | 固態攝影元件用半導體晶圓的薄膜化控制方法 | |
CN102130037B (zh) | 采用吸杂工艺制备带有绝缘埋层的半导体衬底的方法 | |
US20090252944A1 (en) | Silicon wafer and production method thereof | |
JP3085184B2 (ja) | Soi基板及びその製造方法 | |
JP5825931B2 (ja) | 固体撮像素子の製造方法 | |
JP2009099875A (ja) | 半導体装置の製造方法 | |
JP2007208074A (ja) | 半導体装置の製造方法 | |
JP2009283582A (ja) | 貼り合わせウェーハの製造方法及び貼り合わせウェーハ | |
JP2010153488A (ja) | Soiウエハの製造方法およびsoiウエハ | |
US20100144119A1 (en) | Method of producing bonded wafer | |
JPH04162630A (ja) | 半導体基板 | |
JP4440810B2 (ja) | 貼り合わせウエーハの製造方法 | |
JP2010153627A (ja) | 裏面照射型固体撮像素子の製造方法 | |
JP2012216750A (ja) | 半導体装置の製造方法及びそれに用いられる半導体基板 | |
JPH09167763A (ja) | 基板支持治具 | |
JP5470766B2 (ja) | 半導体デバイスの製造方法 | |
JPH11274162A (ja) | 半導体基板とその製造方法 | |
JP2004071939A (ja) | 半導体装置及びその製造方法 | |
JPH02299232A (ja) | 半導体ウェーハ及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20121206 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130228 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140623 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150319 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150331 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150515 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150915 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151013 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5825931 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |