TW495966B - Semiconductor integrated circuit device allowing accurate evaluation of access time of memory contained therein and access time evaluating method - Google Patents

Semiconductor integrated circuit device allowing accurate evaluation of access time of memory contained therein and access time evaluating method Download PDF

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Publication number
TW495966B
TW495966B TW090108826A TW90108826A TW495966B TW 495966 B TW495966 B TW 495966B TW 090108826 A TW090108826 A TW 090108826A TW 90108826 A TW90108826 A TW 90108826A TW 495966 B TW495966 B TW 495966B
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TW
Taiwan
Prior art keywords
signal
time
data
circuit
test
Prior art date
Application number
TW090108826A
Other languages
English (en)
Chinese (zh)
Inventor
Manabu Miura
Makoto Hatakenaka
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW495966B publication Critical patent/TW495966B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Dram (AREA)
TW090108826A 2000-06-20 2001-04-12 Semiconductor integrated circuit device allowing accurate evaluation of access time of memory contained therein and access time evaluating method TW495966B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000184445A JP2002008393A (ja) 2000-06-20 2000-06-20 半導体集積回路装置およびそのアクセスタイム評価方法

Publications (1)

Publication Number Publication Date
TW495966B true TW495966B (en) 2002-07-21

Family

ID=18684889

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090108826A TW495966B (en) 2000-06-20 2001-04-12 Semiconductor integrated circuit device allowing accurate evaluation of access time of memory contained therein and access time evaluating method

Country Status (4)

Country Link
US (2) US6512707B2 (enExample)
JP (1) JP2002008393A (enExample)
KR (1) KR100415793B1 (enExample)
TW (1) TW495966B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835536A (zh) * 2014-02-12 2015-08-12 联发科技股份有限公司 存储器测试装置与存储器测试方法
TWI725561B (zh) * 2018-10-26 2021-04-21 美商美光科技公司 記憶體裝置中之寫入訓練

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JP4480238B2 (ja) * 2000-07-18 2010-06-16 Ｏｋｉセミコンダクタ株式会社 半導体装置
US6889350B2 (en) * 2001-06-29 2005-05-03 Intel Corporation Method and apparatus for testing an I/O buffer
JP4741122B2 (ja) * 2001-09-07 2011-08-03 富士通セミコンダクター株式会社 半導体装置及びデータ転送方法
JP3847150B2 (ja) * 2001-11-28 2006-11-15 沖電気工業株式会社 半導体集積回路とそのジッタ測定方法
KR20030058820A (ko) * 2002-01-02 2003-07-07 주식회사 하이닉스반도체 디램의 스피드 테스트 회로 및 테스트방법
JP4229652B2 (ja) * 2002-07-19 2009-02-25 株式会社ルネサステクノロジ 半導体回路装置
US7080275B2 (en) * 2002-08-12 2006-07-18 Micron Technology, Inc. Method and apparatus using parasitic capacitance for synchronizing signals a device
US7134053B1 (en) * 2002-11-22 2006-11-07 Apple Computer, Inc. Method and apparatus for dynamic performance evaluation of data storage systems
US7213103B2 (en) 2004-04-22 2007-05-01 Apple Inc. Accessing data storage systems without waiting for read errors
US7383400B2 (en) * 2004-04-22 2008-06-03 Apple Inc. Method and apparatus for evaluating and improving disk access time in a RAID system
US20060218455A1 (en) * 2005-03-23 2006-09-28 Silicon Design Solution, Inc. Integrated circuit margin stress test system
JP5527918B2 (ja) 2006-03-28 2014-06-25 ピーエスフォー ルクスコ エスエイアールエル 半導体集積回路装置及びその試験方法
JP2009048769A (ja) * 2008-10-27 2009-03-05 Renesas Technology Corp 半導体回路装置
KR101566899B1 (ko) * 2009-02-26 2015-11-06 삼성전자주식회사 동작 특성들을 변경할 수 있는 반도체 장치와 그 방법, 및 상기 반도체 장치를 포함하는 반도체 시스템
JP2011003088A (ja) * 2009-06-19 2011-01-06 Panasonic Corp データラッチ調整装置およびそれを用いたメモリアクセスシステム
JP6072449B2 (ja) * 2012-07-09 2017-02-01 ルネサスエレクトロニクス株式会社 半導体記憶回路及びその動作方法
KR102032230B1 (ko) * 2013-08-01 2019-10-16 에스케이하이닉스 주식회사 반도체 장치
CN110047552B (zh) * 2018-01-15 2024-02-02 紫光同芯微电子有限公司 一种存储器读取速度测量电路
CN114913910B (zh) * 2022-04-07 2025-05-27 上海格易电子有限公司 Dram电路的测试方法及系统

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CA2055396C (en) * 1990-11-14 1998-08-18 Hidetoshi Toyofuku Delay distortion suppressing system for asynchronous transfer mode (atm) communication system
JPH1021700A (ja) 1996-07-04 1998-01-23 Nec Corp テスト回路を有する半導体集積回路装置
JP3310174B2 (ja) * 1996-08-19 2002-07-29 東芝マイクロエレクトロニクス株式会社 半導体集積回路
KR19980081795A (ko) * 1997-04-29 1998-11-25 윌리엄비.켐플러 집적 회로용 타이밍 검출 및 보상 회로
JP3262033B2 (ja) * 1997-07-31 2002-03-04 日本電気株式会社 半導体記憶装置
JP4263810B2 (ja) * 1998-06-24 2009-05-13 株式会社アドバンテスト 半導体メモリ試験装置及び試験方法
US6111807A (en) * 1998-07-17 2000-08-29 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device allowing easy and fast text
JP4282170B2 (ja) * 1999-07-29 2009-06-17 株式会社ルネサステクノロジ 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104835536A (zh) * 2014-02-12 2015-08-12 联发科技股份有限公司 存储器测试装置与存储器测试方法
CN104835536B (zh) * 2014-02-12 2018-03-23 联发科技股份有限公司 存储器测试装置与存储器测试方法
TWI725561B (zh) * 2018-10-26 2021-04-21 美商美光科技公司 記憶體裝置中之寫入訓練
US11079946B2 (en) 2018-10-26 2021-08-03 Micron Technology, Inc. Write training in memory devices
US11733887B2 (en) 2018-10-26 2023-08-22 Micron Technology, Inc. Write training in memory devices by adjusting delays based on data patterns

Also Published As

Publication number Publication date
JP2002008393A (ja) 2002-01-11
KR20010114141A (ko) 2001-12-29
US20030067815A1 (en) 2003-04-10
US6512707B2 (en) 2003-01-28
US20010055226A1 (en) 2001-12-27
KR100415793B1 (ko) 2004-01-24

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