TW492010B - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device Download PDF

Info

Publication number
TW492010B
TW492010B TW090101501A TW90101501A TW492010B TW 492010 B TW492010 B TW 492010B TW 090101501 A TW090101501 A TW 090101501A TW 90101501 A TW90101501 A TW 90101501A TW 492010 B TW492010 B TW 492010B
Authority
TW
Taiwan
Prior art keywords
bit
memory
mentioned
lines
volatile semiconductor
Prior art date
Application number
TW090101501A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiro Yamamoto
Tomoshi Futatsuya
Yoshikazu Miyawaki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW492010B publication Critical patent/TW492010B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW090101501A 2000-04-28 2001-01-20 Nonvolatile semiconductor memory device TW492010B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000130835A JP4346211B2 (ja) 2000-04-28 2000-04-28 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
TW492010B true TW492010B (en) 2002-06-21

Family

ID=18639849

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090101501A TW492010B (en) 2000-04-28 2001-01-20 Nonvolatile semiconductor memory device

Country Status (3)

Country Link
US (1) US6388921B1 (enExample)
JP (1) JP4346211B2 (enExample)
TW (1) TW492010B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020089587A (ko) * 2001-05-23 2002-11-30 삼성전자 주식회사 공유벌크로 형성된 섹터구조를 갖는 불휘발성 반도체메모리 장치
ITUD20020175A1 (it) * 2002-08-06 2004-02-07 Misa Srl Dispositivo elettronico di supporto per la memorizzazione di dati
JP2004118923A (ja) * 2002-09-25 2004-04-15 Toshiba Corp 磁気ランダムアクセスメモリ
JP4007909B2 (ja) * 2002-12-26 2007-11-14 株式会社ルネサステクノロジ 不揮発性半導体記憶装置のデータ消去方法
EP1901308A1 (en) * 2006-09-15 2008-03-19 STMicroelectronics S.r.l. Improved nand flash memory with reduced programming disturbance
US20090198916A1 (en) * 2008-02-01 2009-08-06 Arimilli Lakshminarayana B Method and Apparatus for Supporting Low-Overhead Memory Locks Within a Multiprocessor System
US8099544B2 (en) * 2008-02-29 2012-01-17 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor memory drive
JP2009272026A (ja) * 2008-05-12 2009-11-19 Toshiba Corp 不揮発性半導体記憶装置
JP5462889B2 (ja) * 2010-01-29 2014-04-02 パナソニック株式会社 半導体記憶装置
KR102293136B1 (ko) * 2014-10-22 2021-08-26 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 저장 장치 및 그것의 동작 방법
KR102337044B1 (ko) * 2015-07-27 2021-12-09 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
KR102786592B1 (ko) 2019-07-01 2025-03-27 삼성전자주식회사 불휘발성 메모리 장치 및 이의 동작 방법
KR102789983B1 (ko) * 2019-08-01 2025-04-03 에스케이하이닉스 주식회사 페이지 버퍼를 구비하는 반도체 메모리 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2917722B2 (ja) * 1993-01-07 1999-07-12 日本電気株式会社 電気的書込消去可能な不揮発性半導体記憶装置
KR100206698B1 (ko) 1995-12-22 1999-07-01 윤종용 페이지 단위의 소거락
KR100225758B1 (ko) * 1996-09-13 1999-10-15 윤종용 라커블 셀들을 가지는 불휘발성 반도체 메모리 장치

Also Published As

Publication number Publication date
US6388921B1 (en) 2002-05-14
JP4346211B2 (ja) 2009-10-21
JP2001312892A (ja) 2001-11-09

Similar Documents

Publication Publication Date Title
TW589643B (en) Nonvolatile semiconductor memory device
TWI721824B (zh) 非揮發性記憶體及其相關記憶體區塊
JP5235422B2 (ja) 不揮発性半導体記憶装置
US6646924B1 (en) Non-volatile memory and operating method thereof
TWI228256B (en) Flash memory device with stable source line regardless of bit line coupling and loading effect
TW492010B (en) Nonvolatile semiconductor memory device
JPH10255487A (ja) 半導体メモリ装置
JP2019160382A (ja) 不揮発性半導体メモリ
CN100426416C (zh) 非易失性半导体存储装置及其控制方法
CN105390154A (zh) 页或字可擦除复合非易失性存储器
JPH05159589A (ja) 過消去保護を有する単トランジスタセルフラッシュメモリアレイ
JP3895855B2 (ja) 不揮発性半導体記憶装置
JP2002237191A (ja) 相補型不揮発性記憶回路
US5347486A (en) Nonvolatile memory device having self-refresh function
JPS6034198B2 (ja) 不揮発性メモリ
KR950008674B1 (ko) 불휘발성 반도체 기억장치 및 그의 데이타소거방법
JPH027295A (ja) 不揮発性半導体メモリ装置
KR20070003639A (ko) 임계치 전압의 상위를 이용하여 데이터를 기억하는 메모리셀을 포함한 반도체 기억 장치
TWI724778B (zh) 隨機位元單元及隨機位元系統
JP3214395B2 (ja) 不揮発性半導体記憶装置
CN111933193B (zh) 非易失性存储器及其相关存储器区块
JP2732070B2 (ja) 不揮発性半導体記憶装置の書込み方法
US20060291288A1 (en) Flash memory device and read method
JP3263636B2 (ja) 不揮発性半導体メモリ装置
JPH0567758A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees