JP4346211B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

Info

Publication number
JP4346211B2
JP4346211B2 JP2000130835A JP2000130835A JP4346211B2 JP 4346211 B2 JP4346211 B2 JP 4346211B2 JP 2000130835 A JP2000130835 A JP 2000130835A JP 2000130835 A JP2000130835 A JP 2000130835A JP 4346211 B2 JP4346211 B2 JP 4346211B2
Authority
JP
Japan
Prior art keywords
normal
field effect
memory
nonvolatile semiconductor
lock bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000130835A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001312892A (ja
JP2001312892A5 (enExample
Inventor
泰弘 山本
知士 二ッ谷
好和 宮脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000130835A priority Critical patent/JP4346211B2/ja
Priority to US09/695,224 priority patent/US6388921B1/en
Priority to TW090101501A priority patent/TW492010B/zh
Publication of JP2001312892A publication Critical patent/JP2001312892A/ja
Publication of JP2001312892A5 publication Critical patent/JP2001312892A5/ja
Application granted granted Critical
Publication of JP4346211B2 publication Critical patent/JP4346211B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2000130835A 2000-04-28 2000-04-28 不揮発性半導体記憶装置 Expired - Fee Related JP4346211B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000130835A JP4346211B2 (ja) 2000-04-28 2000-04-28 不揮発性半導体記憶装置
US09/695,224 US6388921B1 (en) 2000-04-28 2000-10-25 Nonvolatile semiconductor memory device with improved reliability and operation speed
TW090101501A TW492010B (en) 2000-04-28 2001-01-20 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000130835A JP4346211B2 (ja) 2000-04-28 2000-04-28 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2001312892A JP2001312892A (ja) 2001-11-09
JP2001312892A5 JP2001312892A5 (enExample) 2007-04-26
JP4346211B2 true JP4346211B2 (ja) 2009-10-21

Family

ID=18639849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000130835A Expired - Fee Related JP4346211B2 (ja) 2000-04-28 2000-04-28 不揮発性半導体記憶装置

Country Status (3)

Country Link
US (1) US6388921B1 (enExample)
JP (1) JP4346211B2 (enExample)
TW (1) TW492010B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020089587A (ko) * 2001-05-23 2002-11-30 삼성전자 주식회사 공유벌크로 형성된 섹터구조를 갖는 불휘발성 반도체메모리 장치
ITUD20020175A1 (it) * 2002-08-06 2004-02-07 Misa Srl Dispositivo elettronico di supporto per la memorizzazione di dati
JP2004118923A (ja) * 2002-09-25 2004-04-15 Toshiba Corp 磁気ランダムアクセスメモリ
JP4007909B2 (ja) * 2002-12-26 2007-11-14 株式会社ルネサステクノロジ 不揮発性半導体記憶装置のデータ消去方法
EP1901308A1 (en) * 2006-09-15 2008-03-19 STMicroelectronics S.r.l. Improved nand flash memory with reduced programming disturbance
US20090198916A1 (en) * 2008-02-01 2009-08-06 Arimilli Lakshminarayana B Method and Apparatus for Supporting Low-Overhead Memory Locks Within a Multiprocessor System
US8099544B2 (en) * 2008-02-29 2012-01-17 Kabushiki Kaisha Toshiba Information processing apparatus and nonvolatile semiconductor memory drive
JP2009272026A (ja) * 2008-05-12 2009-11-19 Toshiba Corp 不揮発性半導体記憶装置
CN102640281B (zh) * 2010-01-29 2014-04-30 松下电器产业株式会社 半导体存储装置
KR102293136B1 (ko) * 2014-10-22 2021-08-26 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 저장 장치 및 그것의 동작 방법
KR102337044B1 (ko) * 2015-07-27 2021-12-09 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
KR102786592B1 (ko) 2019-07-01 2025-03-27 삼성전자주식회사 불휘발성 메모리 장치 및 이의 동작 방법
KR102789983B1 (ko) * 2019-08-01 2025-04-03 에스케이하이닉스 주식회사 페이지 버퍼를 구비하는 반도체 메모리 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2917722B2 (ja) * 1993-01-07 1999-07-12 日本電気株式会社 電気的書込消去可能な不揮発性半導体記憶装置
KR100206698B1 (ko) 1995-12-22 1999-07-01 윤종용 페이지 단위의 소거락
KR100225758B1 (ko) * 1996-09-13 1999-10-15 윤종용 라커블 셀들을 가지는 불휘발성 반도체 메모리 장치

Also Published As

Publication number Publication date
US6388921B1 (en) 2002-05-14
TW492010B (en) 2002-06-21
JP2001312892A (ja) 2001-11-09

Similar Documents

Publication Publication Date Title
JP3888808B2 (ja) Ｎａｎｄ型不揮発性メモリ
US6055188A (en) Nonvolatile semiconductor memory device having a data circuit for erasing and writing operations
KR100559716B1 (ko) 낸드 플래시 메모리 소자 및 이의 독출 방법
KR100332950B1 (ko) 단일비트동작모드와다중비트동작모드를갖는불휘발성반도체메모리장치및그것의기입/독출방법
KR970003095B1 (ko) 메모리 셀 트랜지스터를 과잉 소거 상태로 되게 하는 기능을 구비한 비휘발성 반도체 메모리 장치와 그 장치에서의 데이타 기록 방법
JP3833970B2 (ja) 不揮発性半導体メモリ
US8605512B2 (en) Nonvolatile semiconductor memory device and method of operating a nonvolatile memory device
EP1039388B1 (en) Block erasable semiconductor memory device with defective block replacement
KR100555506B1 (ko) 프로그램된 메모리 셀들과 프로그램 및 소거 가능한메모리 셀들을 포함하는 메모리 장치
JP4346211B2 (ja) 不揮発性半導体記憶装置
JP2004362729A (ja) 不揮発性半導体記憶装置
KR960005355B1 (ko) 불휘발성 반도체기억장치 및 이를 이용한 기억시스템
WO2010056504A2 (en) Erase voltage reduction in a non-volatile memory device
KR100827695B1 (ko) 연약 셀을 표식자로서 활용하는 불휘발성 반도체 메모리장치
JPH027295A (ja) 不揮発性半導体メモリ装置
JPH04243096A (ja) 不揮発性半導体記憶装置
KR20070003639A (ko) 임계치 전압의 상위를 이용하여 데이터를 기억하는 메모리셀을 포함한 반도체 기억 장치
KR20090026502A (ko) 플래시 메모리 소자의 동작 방법
TW200305880A (en) Systems and methods for refreshing a non-volatile memory using a token
JP4672673B2 (ja) 半導体装置および半導体装置の制御方法
KR20040012856A (ko) 불휘발성 반도체 기억 장치 및 그의 기록 방법
CN113345503A (zh) 半导体存储装置以及读出方法
KR100634456B1 (ko) 플래시 메모리 장치 및 그것의 독출 방법
JP3767588B2 (ja) 不揮発性半導体記憶装置及びその制御方法
JPWO2004109806A1 (ja) 不揮発性半導体メモリ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070312

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070312

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090630

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090707

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090714

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120724

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120724

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120724

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120724

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130724

Year of fee payment: 4

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees