TW488077B - Semiconductor integrated circuit device and the manufacturing method thereof - Google Patents

Semiconductor integrated circuit device and the manufacturing method thereof Download PDF

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Publication number
TW488077B
TW488077B TW090100744A TW90100744A TW488077B TW 488077 B TW488077 B TW 488077B TW 090100744 A TW090100744 A TW 090100744A TW 90100744 A TW90100744 A TW 90100744A TW 488077 B TW488077 B TW 488077B
Authority
TW
Taiwan
Prior art keywords
gate
misfet
active region
substrate
region
Prior art date
Application number
TW090100744A
Other languages
English (en)
Chinese (zh)
Inventor
Akio Nishida
Noriyuki Yabuoshi
Yasuko Yoshida
Kazuhiro Komori
Mitsuhiro Higuchi
Original Assignee
Hitachi Ltd
Hitachi Ulsi Sys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Ulsi Sys Co Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW488077B publication Critical patent/TW488077B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW090100744A 2000-02-01 2001-01-12 Semiconductor integrated circuit device and the manufacturing method thereof TW488077B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000024465A JP4142228B2 (ja) 2000-02-01 2000-02-01 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW488077B true TW488077B (en) 2002-05-21

Family

ID=18550446

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090100744A TW488077B (en) 2000-02-01 2001-01-12 Semiconductor integrated circuit device and the manufacturing method thereof

Country Status (4)

Country Link
US (2) US6586807B2 (enExample)
JP (1) JP4142228B2 (enExample)
KR (1) KR100573609B1 (enExample)
TW (1) TW488077B (enExample)

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US20030036236A1 (en) * 2001-08-15 2003-02-20 Joseph Benedetto Method for radiation hardening N-channel MOS transistors
DE10300687A1 (de) * 2003-01-10 2004-07-22 Infineon Technologies Ag Integrierte Halbleiterschaltung insbesondere Halbleiterspeicherschaltung und Herstellungsverfahren dafür
KR100546334B1 (ko) * 2003-07-01 2006-01-26 삼성전자주식회사 반도체 웨이퍼의 각 영역별로 불순물 농도가 다른 집적회로 반도체 소자 및 그 제조방법
EP1501130A1 (en) * 2003-07-21 2005-01-26 STMicroelectronics S.r.l. Semiconductor MOS device and related manufacturing method
JP2005101494A (ja) 2003-09-01 2005-04-14 Seiko Epson Corp 半導体装置及びそれを用いた半導体記憶装置
JP2005259953A (ja) * 2004-03-11 2005-09-22 Toshiba Corp 半導体装置
KR100525111B1 (ko) * 2004-04-19 2005-11-01 주식회사 하이닉스반도체 반도체 소자
TWI392077B (zh) * 2004-11-08 2013-04-01 Intersil Inc 改良之靜電放電結構
US8044437B1 (en) * 2005-05-16 2011-10-25 Lsi Logic Corporation Integrated circuit cell architecture configurable for memory or logic elements
KR100695868B1 (ko) * 2005-06-23 2007-03-19 삼성전자주식회사 소자 분리막과 그 제조 방법, 이를 갖는 반도체 장치 및 그제조 방법
JP4959990B2 (ja) * 2006-03-01 2012-06-27 株式会社東芝 半導体装置
JP2008010830A (ja) * 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 半導体装置
JP2008016777A (ja) * 2006-07-10 2008-01-24 Toshiba Corp 半導体装置およびその製造方法
US7718496B2 (en) * 2007-10-30 2010-05-18 International Business Machines Corporation Techniques for enabling multiple Vt devices using high-K metal gate stacks
US7804143B2 (en) * 2008-08-13 2010-09-28 Intersil Americas, Inc. Radiation hardened device
US8912577B2 (en) * 2012-09-19 2014-12-16 The United States Of America As Represented By The Secretary Of The Army Distributed heating transistor devices providing reduced self-heating
US20140103440A1 (en) 2012-10-15 2014-04-17 Texas Instruments Incorporated I-shaped gate electrode for improved sub-threshold mosfet performance
JP6279332B2 (ja) * 2014-01-21 2018-02-14 ルネサスエレクトロニクス株式会社 半導体装置
KR102564786B1 (ko) * 2016-01-13 2023-08-09 삼성전자주식회사 반도체 소자 및 그 제조방법
KR102211638B1 (ko) * 2017-06-09 2021-02-04 삼성전자주식회사 반도체 장치
US11183576B2 (en) * 2019-02-13 2021-11-23 Micron Technology, Inc. Gate electrode layout with expanded portions over active and isolation regions

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JPH05218403A (ja) * 1992-01-31 1993-08-27 Hitachi Ltd 半導体装置
JPH07142608A (ja) * 1993-11-22 1995-06-02 Hitachi Ltd 半導体集積回路装置
US5567553A (en) 1994-07-12 1996-10-22 International Business Machines Corporation Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures
JP3545470B2 (ja) * 1994-12-01 2004-07-21 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3532325B2 (ja) * 1995-07-21 2004-05-31 株式会社東芝 半導体記憶装置
US6346439B1 (en) * 1996-07-09 2002-02-12 Micron Technology, Inc. Semiconductor transistor devices and methods for forming semiconductor transistor devices
JP2976903B2 (ja) * 1996-10-08 1999-11-10 日本電気株式会社 半導体記憶装置
KR100243294B1 (ko) * 1997-06-09 2000-02-01 윤종용 반도체장치의 강유전체 메모리 셀 및 어레이
JPH113984A (ja) * 1997-06-13 1999-01-06 Hitachi Ltd 半導体集積回路装置
US6242788B1 (en) * 1997-08-01 2001-06-05 Nippon Steel Corporation Semiconductor device and a method of manufacturing the same
JPH11121716A (ja) * 1997-10-20 1999-04-30 Fujitsu Ltd 半導体装置及びその製造方法
US6018180A (en) * 1997-12-23 2000-01-25 Advanced Micro Devices, Inc. Transistor formation with LI overetch immunity
JP3686248B2 (ja) * 1998-01-26 2005-08-24 株式会社日立製作所 半導体集積回路装置およびその製造方法
JP2978467B2 (ja) * 1998-03-16 1999-11-15 株式会社日立製作所 半導体集積回路装置の製造方法
US6074903A (en) * 1998-06-16 2000-06-13 Siemens Aktiengesellschaft Method for forming electrical isolation for semiconductor devices
US6278165B1 (en) * 1998-06-29 2001-08-21 Kabushiki Kaisha Toshiba MIS transistor having a large driving current and method for producing the same
JP4030198B2 (ja) * 1998-08-11 2008-01-09 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000077625A (ja) * 1998-08-31 2000-03-14 Hitachi Ltd 半導体集積回路装置の製造方法
US5998848A (en) * 1998-09-18 1999-12-07 International Business Machines Corporation Depleted poly-silicon edged MOSFET structure and method
US6166415A (en) * 1998-11-02 2000-12-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved noise resistivity
JP2001156268A (ja) * 1999-11-25 2001-06-08 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
KR100573609B1 (ko) 2006-04-24
JP4142228B2 (ja) 2008-09-03
US20030141558A1 (en) 2003-07-31
US6586807B2 (en) 2003-07-01
JP2001217325A (ja) 2001-08-10
US20010011753A1 (en) 2001-08-09
US6897499B2 (en) 2005-05-24
KR20010077932A (ko) 2001-08-20

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