JP4142228B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4142228B2
JP4142228B2 JP2000024465A JP2000024465A JP4142228B2 JP 4142228 B2 JP4142228 B2 JP 4142228B2 JP 2000024465 A JP2000024465 A JP 2000024465A JP 2000024465 A JP2000024465 A JP 2000024465A JP 4142228 B2 JP4142228 B2 JP 4142228B2
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JP
Japan
Prior art keywords
misfet
region
active region
substrate
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000024465A
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English (en)
Japanese (ja)
Other versions
JP2001217325A5 (enExample
JP2001217325A (ja
Inventor
彰男 西田
法之 薮押
安子 吉田
和宏 小森
壮介 辻
秀郎 三輪
光宏 樋口
宏一 今任
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000024465A priority Critical patent/JP4142228B2/ja
Priority to KR1020000070813A priority patent/KR100573609B1/ko
Priority to TW090100744A priority patent/TW488077B/zh
Priority to US09/774,717 priority patent/US6586807B2/en
Publication of JP2001217325A publication Critical patent/JP2001217325A/ja
Priority to US10/359,678 priority patent/US6897499B2/en
Publication of JP2001217325A5 publication Critical patent/JP2001217325A5/ja
Application granted granted Critical
Publication of JP4142228B2 publication Critical patent/JP4142228B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000024465A 2000-02-01 2000-02-01 半導体集積回路装置 Expired - Fee Related JP4142228B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000024465A JP4142228B2 (ja) 2000-02-01 2000-02-01 半導体集積回路装置
KR1020000070813A KR100573609B1 (ko) 2000-02-01 2000-11-27 반도체 집적회로장치 및 그 제조방법
TW090100744A TW488077B (en) 2000-02-01 2001-01-12 Semiconductor integrated circuit device and the manufacturing method thereof
US09/774,717 US6586807B2 (en) 2000-02-01 2001-02-01 Semiconductor integrated circuit device
US10/359,678 US6897499B2 (en) 2000-02-01 2003-02-07 Semiconductor integrated circuit device including MISFETs each with a gate electrode extended over a boundary region between an active region and an element isolation trench

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000024465A JP4142228B2 (ja) 2000-02-01 2000-02-01 半導体集積回路装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006037398A Division JP2006179949A (ja) 2006-02-15 2006-02-15 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2001217325A JP2001217325A (ja) 2001-08-10
JP2001217325A5 JP2001217325A5 (enExample) 2006-03-30
JP4142228B2 true JP4142228B2 (ja) 2008-09-03

Family

ID=18550446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000024465A Expired - Fee Related JP4142228B2 (ja) 2000-02-01 2000-02-01 半導体集積回路装置

Country Status (4)

Country Link
US (2) US6586807B2 (enExample)
JP (1) JP4142228B2 (enExample)
KR (1) KR100573609B1 (enExample)
TW (1) TW488077B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030036236A1 (en) * 2001-08-15 2003-02-20 Joseph Benedetto Method for radiation hardening N-channel MOS transistors
DE10300687A1 (de) * 2003-01-10 2004-07-22 Infineon Technologies Ag Integrierte Halbleiterschaltung insbesondere Halbleiterspeicherschaltung und Herstellungsverfahren dafür
KR100546334B1 (ko) * 2003-07-01 2006-01-26 삼성전자주식회사 반도체 웨이퍼의 각 영역별로 불순물 농도가 다른 집적회로 반도체 소자 및 그 제조방법
EP1501130A1 (en) * 2003-07-21 2005-01-26 STMicroelectronics S.r.l. Semiconductor MOS device and related manufacturing method
JP2005101494A (ja) 2003-09-01 2005-04-14 Seiko Epson Corp 半導体装置及びそれを用いた半導体記憶装置
JP2005259953A (ja) * 2004-03-11 2005-09-22 Toshiba Corp 半導体装置
KR100525111B1 (ko) * 2004-04-19 2005-11-01 주식회사 하이닉스반도체 반도체 소자
TWI392077B (zh) * 2004-11-08 2013-04-01 Intersil Inc 改良之靜電放電結構
US8044437B1 (en) * 2005-05-16 2011-10-25 Lsi Logic Corporation Integrated circuit cell architecture configurable for memory or logic elements
KR100695868B1 (ko) * 2005-06-23 2007-03-19 삼성전자주식회사 소자 분리막과 그 제조 방법, 이를 갖는 반도체 장치 및 그제조 방법
JP4959990B2 (ja) * 2006-03-01 2012-06-27 株式会社東芝 半導体装置
JP2008010830A (ja) * 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 半導体装置
JP2008016777A (ja) * 2006-07-10 2008-01-24 Toshiba Corp 半導体装置およびその製造方法
US7718496B2 (en) * 2007-10-30 2010-05-18 International Business Machines Corporation Techniques for enabling multiple Vt devices using high-K metal gate stacks
US7804143B2 (en) * 2008-08-13 2010-09-28 Intersil Americas, Inc. Radiation hardened device
US8912577B2 (en) * 2012-09-19 2014-12-16 The United States Of America As Represented By The Secretary Of The Army Distributed heating transistor devices providing reduced self-heating
US20140103440A1 (en) 2012-10-15 2014-04-17 Texas Instruments Incorporated I-shaped gate electrode for improved sub-threshold mosfet performance
JP6279332B2 (ja) * 2014-01-21 2018-02-14 ルネサスエレクトロニクス株式会社 半導体装置
KR102564786B1 (ko) * 2016-01-13 2023-08-09 삼성전자주식회사 반도체 소자 및 그 제조방법
KR102211638B1 (ko) * 2017-06-09 2021-02-04 삼성전자주식회사 반도체 장치
US11183576B2 (en) * 2019-02-13 2021-11-23 Micron Technology, Inc. Gate electrode layout with expanded portions over active and isolation regions

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218403A (ja) * 1992-01-31 1993-08-27 Hitachi Ltd 半導体装置
JPH07142608A (ja) * 1993-11-22 1995-06-02 Hitachi Ltd 半導体集積回路装置
US5567553A (en) 1994-07-12 1996-10-22 International Business Machines Corporation Method to suppress subthreshold leakage due to sharp isolation corners in submicron FET structures
JP3545470B2 (ja) * 1994-12-01 2004-07-21 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3532325B2 (ja) * 1995-07-21 2004-05-31 株式会社東芝 半導体記憶装置
US6346439B1 (en) * 1996-07-09 2002-02-12 Micron Technology, Inc. Semiconductor transistor devices and methods for forming semiconductor transistor devices
JP2976903B2 (ja) * 1996-10-08 1999-11-10 日本電気株式会社 半導体記憶装置
KR100243294B1 (ko) * 1997-06-09 2000-02-01 윤종용 반도체장치의 강유전체 메모리 셀 및 어레이
JPH113984A (ja) * 1997-06-13 1999-01-06 Hitachi Ltd 半導体集積回路装置
US6242788B1 (en) * 1997-08-01 2001-06-05 Nippon Steel Corporation Semiconductor device and a method of manufacturing the same
JPH11121716A (ja) * 1997-10-20 1999-04-30 Fujitsu Ltd 半導体装置及びその製造方法
US6018180A (en) * 1997-12-23 2000-01-25 Advanced Micro Devices, Inc. Transistor formation with LI overetch immunity
JP3686248B2 (ja) * 1998-01-26 2005-08-24 株式会社日立製作所 半導体集積回路装置およびその製造方法
JP2978467B2 (ja) * 1998-03-16 1999-11-15 株式会社日立製作所 半導体集積回路装置の製造方法
US6074903A (en) * 1998-06-16 2000-06-13 Siemens Aktiengesellschaft Method for forming electrical isolation for semiconductor devices
US6278165B1 (en) * 1998-06-29 2001-08-21 Kabushiki Kaisha Toshiba MIS transistor having a large driving current and method for producing the same
JP4030198B2 (ja) * 1998-08-11 2008-01-09 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2000077625A (ja) * 1998-08-31 2000-03-14 Hitachi Ltd 半導体集積回路装置の製造方法
US5998848A (en) * 1998-09-18 1999-12-07 International Business Machines Corporation Depleted poly-silicon edged MOSFET structure and method
US6166415A (en) * 1998-11-02 2000-12-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved noise resistivity
JP2001156268A (ja) * 1999-11-25 2001-06-08 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
KR100573609B1 (ko) 2006-04-24
US20030141558A1 (en) 2003-07-31
US6586807B2 (en) 2003-07-01
JP2001217325A (ja) 2001-08-10
US20010011753A1 (en) 2001-08-09
US6897499B2 (en) 2005-05-24
KR20010077932A (ko) 2001-08-20
TW488077B (en) 2002-05-21

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