TW480592B - Vacuum processing apparatus for semiconductor process - Google Patents
Vacuum processing apparatus for semiconductor process Download PDFInfo
- Publication number
- TW480592B TW480592B TW089127545A TW89127545A TW480592B TW 480592 B TW480592 B TW 480592B TW 089127545 A TW089127545 A TW 089127545A TW 89127545 A TW89127545 A TW 89127545A TW 480592 B TW480592 B TW 480592B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- processing chamber
- scope
- container body
- patent application
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title abstract description 10
- 230000008569 process Effects 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims description 57
- 230000007246 mechanism Effects 0.000 claims description 46
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 19
- 238000012423 maintenance Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 230000006837 decompression Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP36501199A JP3527450B2 (ja) | 1999-12-22 | 1999-12-22 | 処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW480592B true TW480592B (en) | 2002-03-21 |
Family
ID=18483216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089127545A TW480592B (en) | 1999-12-22 | 2000-12-21 | Vacuum processing apparatus for semiconductor process |
Country Status (4)
Country | Link |
---|---|
US (1) | US6565662B2 (ja) |
JP (1) | JP3527450B2 (ja) |
KR (1) | KR100497880B1 (ja) |
TW (1) | TW480592B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102270565A (zh) * | 2010-06-07 | 2011-12-07 | 东京毅力科创株式会社 | 基板处理装置 |
TWI400753B (zh) * | 2005-08-31 | 2013-07-01 | Tokyo Electron Ltd | A substrate processing apparatus and a substrate processing system |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3527450B2 (ja) * | 1999-12-22 | 2004-05-17 | 東京エレクトロン株式会社 | 処理装置 |
US6776848B2 (en) * | 2002-01-17 | 2004-08-17 | Applied Materials, Inc. | Motorized chamber lid |
JP4219702B2 (ja) | 2003-02-06 | 2009-02-04 | 東京エレクトロン株式会社 | 減圧処理装置 |
KR100490049B1 (ko) * | 2003-04-14 | 2005-05-17 | 삼성전자주식회사 | 일체형 디퓨저 프레임을 가지는 cvd 장치 |
US20050063798A1 (en) * | 2003-06-06 | 2005-03-24 | Davis Jeffry Alan | Interchangeable workpiece handling apparatus and associated tool for processing microfeature workpieces |
US20050050767A1 (en) * | 2003-06-06 | 2005-03-10 | Hanson Kyle M. | Wet chemical processing chambers for processing microfeature workpieces |
US7393439B2 (en) * | 2003-06-06 | 2008-07-01 | Semitool, Inc. | Integrated microfeature workpiece processing tools with registration systems for paddle reactors |
US20050034977A1 (en) * | 2003-06-06 | 2005-02-17 | Hanson Kyle M. | Electrochemical deposition chambers for depositing materials onto microfeature workpieces |
US20070214620A1 (en) * | 2003-06-11 | 2007-09-20 | Mitsuru Miyazaki | Substrate processing apparatus and substrate processing method |
US20070144912A1 (en) * | 2003-07-01 | 2007-06-28 | Woodruff Daniel J | Linearly translating agitators for processing microfeature workpieces, and associated methods |
US7335277B2 (en) * | 2003-09-08 | 2008-02-26 | Hitachi High-Technologies Corporation | Vacuum processing apparatus |
CN1898997A (zh) * | 2003-11-03 | 2007-01-17 | 美国芯源系统股份有限公司 | 具有用于驱动器控制的集成光敏元件的光源驱动器 |
KR100856679B1 (ko) * | 2004-12-08 | 2008-09-04 | 주식회사 에이디피엔지니어링 | 평판표시소자 제조장치 |
US20060071384A1 (en) * | 2004-10-06 | 2006-04-06 | Advanced Display Process Engineering Co. Ltd. | Apparatus for manufacturing flat-panel display |
KR100648403B1 (ko) * | 2004-10-20 | 2006-11-24 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
JP4432728B2 (ja) * | 2004-10-29 | 2010-03-17 | 株式会社島津製作所 | 真空処理装置 |
KR100661752B1 (ko) * | 2005-02-04 | 2006-12-27 | 주식회사 에이디피엔지니어링 | 운반용 호이스트 지그 |
TWI304241B (en) | 2005-02-04 | 2008-12-11 | Advanced Display Proc Eng Co | Vacuum processing apparatus |
KR100667598B1 (ko) * | 2005-02-25 | 2007-01-12 | 주식회사 아이피에스 | 반도체 처리 장치 |
US20060218680A1 (en) * | 2005-03-28 | 2006-09-28 | Bailey Andrew D Iii | Apparatus for servicing a plasma processing system with a robot |
JP4837953B2 (ja) * | 2005-07-26 | 2011-12-14 | コスミック工業株式会社 | 蓋体開閉装置 |
US20070125303A1 (en) * | 2005-12-02 | 2007-06-07 | Ward Ruby | High-throughput deposition system for oxide thin film growth by reactive coevaportation |
US7883579B2 (en) * | 2005-12-14 | 2011-02-08 | Tokyo Electron Limited | Substrate processing apparatus and lid supporting apparatus for the substrate processing apparatus |
WO2007083393A1 (ja) * | 2006-01-23 | 2007-07-26 | Youtec Co., Ltd. | 成膜装置及び蒸着装置 |
TWI279381B (en) * | 2006-01-26 | 2007-04-21 | Au Optronics Corp | Method for maintaining low pressure process apparatus and transmitting device thereof |
EP1994548A1 (en) * | 2006-03-08 | 2008-11-26 | Sez Ag | Device for fluid treating plate-like articles |
KR100790797B1 (ko) * | 2006-06-08 | 2008-01-02 | 주식회사 아이피에스 | 진공처리장치 |
JP4914139B2 (ja) * | 2006-07-24 | 2012-04-11 | 株式会社日立ハイテクノロジーズ | 半導体処理装置 |
US20080178460A1 (en) * | 2007-01-29 | 2008-07-31 | Woodruff Daniel J | Protected magnets and magnet shielding for processing microfeature workpieces, and associated systems and methods |
TWI405295B (zh) * | 2007-08-13 | 2013-08-11 | Advanced Display Proc Eng Co | 基板處理裝置及方法 |
US20090258162A1 (en) * | 2008-04-12 | 2009-10-15 | Applied Materials, Inc. | Plasma processing apparatus and method |
US20090255798A1 (en) * | 2008-04-12 | 2009-10-15 | Gaku Furuta | Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber |
JP5659146B2 (ja) * | 2008-04-12 | 2015-01-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマ処理装置及び方法 |
KR101000330B1 (ko) | 2008-04-22 | 2010-12-13 | 엘아이지에이디피 주식회사 | 기판처리장 |
KR101066033B1 (ko) * | 2009-07-28 | 2011-09-20 | 엘아이지에이디피 주식회사 | 화학기상 증착장치 및 기판 처리장치 |
JP2011040182A (ja) * | 2009-08-07 | 2011-02-24 | Mitsubishi Heavy Ind Ltd | 有機発光パネルの製造装置及び有機発光パネルの製造方法 |
JP5560909B2 (ja) * | 2010-05-31 | 2014-07-30 | 東京エレクトロン株式会社 | 蓋体保持治具 |
JP5585238B2 (ja) | 2010-06-24 | 2014-09-10 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5595202B2 (ja) * | 2010-09-28 | 2014-09-24 | 東京エレクトロン株式会社 | 処理装置およびそのメンテナンス方法 |
KR101136728B1 (ko) * | 2010-10-18 | 2012-04-20 | 주성엔지니어링(주) | 기판처리장치와 그의 분해 및 조립방법 |
JP5965680B2 (ja) * | 2012-03-08 | 2016-08-10 | 東京エレクトロン株式会社 | 処理室内部品の冷却方法、処理室内部品冷却プログラム、及び記憶媒体 |
CN103911598A (zh) * | 2012-12-31 | 2014-07-09 | 光达光电设备科技(嘉兴)有限公司 | 一种金属有机化学气相沉积设备 |
KR20140090445A (ko) * | 2013-01-09 | 2014-07-17 | 삼성디스플레이 주식회사 | 기판 처리 장치 |
KR20150015714A (ko) * | 2013-08-01 | 2015-02-11 | 삼성전자주식회사 | 서셉터 및 이를 포함하는 막 증착장치 |
JP6293499B2 (ja) * | 2014-01-27 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP5941943B2 (ja) * | 2014-05-08 | 2016-06-29 | ワイエイシイ株式会社 | 蓋体開閉装置およびマルチチャンバー処理システム |
JP5960758B2 (ja) * | 2014-07-24 | 2016-08-02 | 東京エレクトロン株式会社 | 基板処理システムおよび基板処理装置 |
JP6567886B2 (ja) * | 2015-06-15 | 2019-08-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN106898535B (zh) * | 2015-12-21 | 2018-11-20 | 中微半导体设备(上海)有限公司 | 半导体处理设备、系统与半导体处理设备的顶盖开启方法 |
US20210178473A1 (en) * | 2019-12-12 | 2021-06-17 | Arcam Ab | Additive manufacturing apparatuses with separable process chamber housing portions and methods of use |
US20220093426A1 (en) * | 2020-09-21 | 2022-03-24 | Applied Materials, Inc. | Movable semiconductor processing chamber for improved serviceability |
DE102022129723A1 (de) * | 2022-11-10 | 2024-05-16 | Aixtron Se | CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57105234A (en) * | 1980-12-22 | 1982-06-30 | Sigma Gijutsu Kogyo Kk | Vacuum type treatment apparatus |
JP2590402Y2 (ja) * | 1993-04-15 | 1999-02-17 | 千代田電機工業株式会社 | 上端が開口した容器の開閉蓋装置 |
JPH0745684A (ja) * | 1993-07-27 | 1995-02-14 | Kokusai Electric Co Ltd | 半導体製造装置の処理室 |
JPH07147241A (ja) * | 1993-11-24 | 1995-06-06 | Fuji Electric Co Ltd | 半導体ウエハ処理装置のメンテナンス機構 |
US5912555A (en) * | 1995-04-10 | 1999-06-15 | Tokyo Electron Limited | Probe apparatus |
JPH11140648A (ja) * | 1997-11-07 | 1999-05-25 | Tokyo Electron Ltd | プロセスチャンバ装置及び処理装置 |
JP3527450B2 (ja) * | 1999-12-22 | 2004-05-17 | 東京エレクトロン株式会社 | 処理装置 |
-
1999
- 1999-12-22 JP JP36501199A patent/JP3527450B2/ja not_active Expired - Lifetime
-
2000
- 2000-12-19 KR KR10-2000-0078484A patent/KR100497880B1/ko active IP Right Grant
- 2000-12-20 US US09/739,701 patent/US6565662B2/en not_active Expired - Lifetime
- 2000-12-21 TW TW089127545A patent/TW480592B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400753B (zh) * | 2005-08-31 | 2013-07-01 | Tokyo Electron Ltd | A substrate processing apparatus and a substrate processing system |
CN102270565A (zh) * | 2010-06-07 | 2011-12-07 | 东京毅力科创株式会社 | 基板处理装置 |
CN102270565B (zh) * | 2010-06-07 | 2014-03-12 | 东京毅力科创株式会社 | 基板处理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP3527450B2 (ja) | 2004-05-17 |
KR100497880B1 (ko) | 2005-06-29 |
KR20010067439A (ko) | 2001-07-12 |
JP2001185534A (ja) | 2001-07-06 |
US6565662B2 (en) | 2003-05-20 |
US20010006094A1 (en) | 2001-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |