TW471060B - An insitu post etch process to remove remaining photoresist and residual sidewall passivation - Google Patents
An insitu post etch process to remove remaining photoresist and residual sidewall passivation Download PDFInfo
- Publication number
- TW471060B TW471060B TW089127266A TW89127266A TW471060B TW 471060 B TW471060 B TW 471060B TW 089127266 A TW089127266 A TW 089127266A TW 89127266 A TW89127266 A TW 89127266A TW 471060 B TW471060 B TW 471060B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- substrate
- tank
- metal
- gas
- Prior art date
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229920002120 photoresistant polymer Polymers 0.000 title description 11
- 239000007789 gas Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims description 183
- 239000000758 substrate Substances 0.000 claims description 51
- 238000005260 corrosion Methods 0.000 claims description 21
- 230000007797 corrosion Effects 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 13
- 229910052770 Uranium Inorganic materials 0.000 claims description 10
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000011068 loading method Methods 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052786 argon Inorganic materials 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 45
- 239000000126 substance Substances 0.000 description 30
- 238000007654 immersion Methods 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 101100165186 Caenorhabditis elegans bath-34 gene Proteins 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010071232 Protuberant ear Diseases 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Removal Of Specific Substances (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/472,757 US6852636B1 (en) | 1999-12-27 | 1999-12-27 | Insitu post etch process to remove remaining photoresist and residual sidewall passivation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW471060B true TW471060B (en) | 2002-01-01 |
Family
ID=23876824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089127266A TW471060B (en) | 1999-12-27 | 2000-12-19 | An insitu post etch process to remove remaining photoresist and residual sidewall passivation |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6852636B1 (enExample) |
| EP (1) | EP1243023B1 (enExample) |
| JP (2) | JP2003518768A (enExample) |
| KR (1) | KR100794538B1 (enExample) |
| CN (1) | CN1210773C (enExample) |
| AT (1) | ATE431964T1 (enExample) |
| AU (1) | AU2737301A (enExample) |
| DE (1) | DE60042246D1 (enExample) |
| TW (1) | TW471060B (enExample) |
| WO (1) | WO2001048808A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60119350T2 (de) * | 2001-12-17 | 2007-03-15 | Ami Semiconductor Belgium Bvba | Methode zur Herstellung von Leiterbahnstrukturen |
| US6943039B2 (en) * | 2003-02-11 | 2005-09-13 | Applied Materials Inc. | Method of etching ferroelectric layers |
| CN100444025C (zh) * | 2004-07-12 | 2008-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 光刻胶修整方法 |
| US7597816B2 (en) * | 2004-09-03 | 2009-10-06 | Lam Research Corporation | Wafer bevel polymer removal |
| US7413993B2 (en) * | 2004-11-22 | 2008-08-19 | Infineon Technologies Ag | Process for removing a residue from a metal structure on a semiconductor substrate |
| JP4518986B2 (ja) * | 2005-03-17 | 2010-08-04 | 東京エレクトロン株式会社 | 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体 |
| US20060246720A1 (en) * | 2005-04-28 | 2006-11-02 | Chii-Ming Wu | Method to improve thermal stability of silicides with additives |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| US7479457B2 (en) * | 2005-09-08 | 2009-01-20 | Lam Research Corporation | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof |
| US20070227555A1 (en) * | 2006-04-04 | 2007-10-04 | Johnson Michael R | Method to manipulate post metal etch/side wall residue |
| JP2014212310A (ja) * | 2013-04-02 | 2014-11-13 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法及び製造装置 |
| JP6844083B2 (ja) * | 2015-05-27 | 2021-03-17 | サムコ株式会社 | アフターコロージョン抑制処理方法 |
| CN107464750B (zh) * | 2017-08-23 | 2019-12-13 | 成都海威华芯科技有限公司 | 一种去除光刻胶底膜的工艺方法 |
| US11749532B2 (en) | 2021-05-04 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| KR20240086974A (ko) * | 2022-12-12 | 2024-06-19 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US20250118532A1 (en) * | 2023-10-09 | 2025-04-10 | Tokyo Electron Limited | System and method for plasma processing |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4804431A (en) | 1987-11-03 | 1989-02-14 | Aaron Ribner | Microwave plasma etching machine and method of etching |
| JP2831646B2 (ja) * | 1988-03-25 | 1998-12-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US4985113A (en) | 1989-03-10 | 1991-01-15 | Hitachi, Ltd. | Sample treating method and apparatus |
| US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
| JPH0341728A (ja) * | 1989-07-07 | 1991-02-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE69033663T2 (de) | 1989-08-28 | 2001-06-21 | Hitachi, Ltd. | Verfahren zur Behandlung eines Aluminium enthaltenden Musters |
| US5198634A (en) | 1990-05-21 | 1993-03-30 | Mattson Brad S | Plasma contamination removal process |
| JP2998173B2 (ja) * | 1990-06-01 | 2000-01-11 | 松下電器産業株式会社 | Ａｌエッチング方法 |
| WO1992000601A1 (fr) | 1990-06-27 | 1992-01-09 | Fujitsu Limited | Procede de fabrication d'un circuit integre a semi-conducteurs et appareil de fabrication correspondant |
| US5174856A (en) | 1991-08-26 | 1992-12-29 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch |
| JPH05275325A (ja) * | 1992-03-26 | 1993-10-22 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5462892A (en) | 1992-06-22 | 1995-10-31 | Vlsi Technology, Inc. | Semiconductor processing method for preventing corrosion of metal film connections |
| US5931721A (en) | 1994-11-07 | 1999-08-03 | Sumitomo Heavy Industries, Ltd. | Aerosol surface processing |
| JPH08213366A (ja) * | 1995-02-07 | 1996-08-20 | Hitachi Ltd | パターン形成方法およびパターン形成装置、ならびに半導体集積回路装置の製造方法および半導体製造装置 |
| US5705443A (en) | 1995-05-30 | 1998-01-06 | Advanced Technology Materials, Inc. | Etching method for refractory materials |
| WO1997011482A2 (en) | 1995-09-05 | 1997-03-27 | Lsi Logic Corporation | Removal of halogens and photoresist from wafers |
| US5573961A (en) | 1995-11-09 | 1996-11-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of making a body contact for a MOSFET device fabricated in an SOI layer |
| US5780359A (en) * | 1995-12-11 | 1998-07-14 | Applied Materials, Inc. | Polymer removal from top surfaces and sidewalls of a semiconductor wafer |
| US5824604A (en) | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
| US5712207A (en) | 1996-02-29 | 1998-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Profile improvement of a metal interconnect structure on a tungsten plug |
| DE69708787T2 (de) | 1996-03-06 | 2002-06-20 | Clariant Finance (Bvi) Ltd., Road Town | Verfahren zur herstellung von filmmustern unter anwendung der abhebetechnologie |
| WO1997033300A1 (en) | 1996-03-06 | 1997-09-12 | Mattson Technology, Inc. | Icp reactor having a conically-shaped plasma-generating section |
| US5908319A (en) | 1996-04-24 | 1999-06-01 | Ulvac Technologies, Inc. | Cleaning and stripping of photoresist from surfaces of semiconductor wafers |
| US5882489A (en) | 1996-04-26 | 1999-03-16 | Ulvac Technologies, Inc. | Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
| US5776832A (en) | 1996-07-17 | 1998-07-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Anti-corrosion etch process for etching metal interconnections extending over and within contact openings |
| US5779929A (en) | 1996-10-07 | 1998-07-14 | Lucent Technologies Inc. | Thin film metallization for barium nanotitanate substrates |
| US5795831A (en) | 1996-10-16 | 1998-08-18 | Ulvac Technologies, Inc. | Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers |
| US5744395A (en) | 1996-10-16 | 1998-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure |
| US5899716A (en) | 1997-05-19 | 1999-05-04 | Vanguard International Semiconductor Corporation | Oxygen ion implantation procedure to increase the surface area of an STC structure |
| JPH10335313A (ja) * | 1997-06-03 | 1998-12-18 | Hitachi Ltd | プラズマエッチング方法 |
| JPH113881A (ja) * | 1997-06-11 | 1999-01-06 | Fujitsu Ltd | アッシング方法及び装置 |
| US5846884A (en) | 1997-06-20 | 1998-12-08 | Siemens Aktiengesellschaft | Methods for metal etching with reduced sidewall build up during integrated circuit manufacturing |
| US5946589A (en) | 1997-10-09 | 1999-08-31 | Chartered Semiconductor Manufacturing, Ltd. | Elimination of void formation in aluminum based interconnect structures |
| US5849639A (en) | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
-
1999
- 1999-12-27 US US09/472,757 patent/US6852636B1/en not_active Expired - Fee Related
-
2000
- 2000-12-19 TW TW089127266A patent/TW471060B/zh not_active IP Right Cessation
- 2000-12-21 AT AT00990333T patent/ATE431964T1/de not_active IP Right Cessation
- 2000-12-21 CN CNB008191689A patent/CN1210773C/zh not_active Expired - Fee Related
- 2000-12-21 AU AU27373/01A patent/AU2737301A/en not_active Abandoned
- 2000-12-21 JP JP2001548428A patent/JP2003518768A/ja not_active Withdrawn
- 2000-12-21 DE DE60042246T patent/DE60042246D1/de not_active Expired - Lifetime
- 2000-12-21 WO PCT/US2000/035165 patent/WO2001048808A1/en not_active Ceased
- 2000-12-21 KR KR1020027008271A patent/KR100794538B1/ko not_active Expired - Fee Related
- 2000-12-21 EP EP00990333A patent/EP1243023B1/en not_active Expired - Lifetime
-
2011
- 2011-09-08 JP JP2011196141A patent/JP2012023385A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012023385A (ja) | 2012-02-02 |
| AU2737301A (en) | 2001-07-09 |
| DE60042246D1 (de) | 2009-07-02 |
| CN1434978A (zh) | 2003-08-06 |
| JP2003518768A (ja) | 2003-06-10 |
| EP1243023A1 (en) | 2002-09-25 |
| EP1243023B1 (en) | 2009-05-20 |
| US6852636B1 (en) | 2005-02-08 |
| ATE431964T1 (de) | 2009-06-15 |
| WO2001048808A1 (en) | 2001-07-05 |
| KR100794538B1 (ko) | 2008-01-17 |
| KR20020081234A (ko) | 2002-10-26 |
| CN1210773C (zh) | 2005-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW471060B (en) | An insitu post etch process to remove remaining photoresist and residual sidewall passivation | |
| JP5165560B2 (ja) | エッチング層に形状を形成するための方法 | |
| JP2541851B2 (ja) | 有機物の剥離方法 | |
| CN101715603B (zh) | 活动硬掩模的等离子体刻蚀过程中的原地光刻胶剥离 | |
| EP2916344B1 (en) | Method of cleaning a plasma processing apparatus | |
| KR20110065469A (ko) | 측벽 형성 공정 | |
| CN101715604A (zh) | 深硅刻蚀上掩膜底切的最小化 | |
| KR102496968B1 (ko) | 에칭 방법 | |
| JP2005109492A (ja) | 処理室の清掃方法 | |
| TW474983B (en) | Solutions and processes for removal of sidewall residue after dry etching | |
| JPH03120383A (ja) | 不要な物質をプラズマで除去する方法 | |
| US6921493B2 (en) | Method of processing substrates | |
| TWI850243B (zh) | 電漿處理方法及電漿處理裝置 | |
| WO2004102277B1 (en) | Method providing an improved bi-layer photoresist pattern | |
| JP2010263244A (ja) | プラズマ処理方法 | |
| TW200539289A (en) | Waferless automatic cleaning after barrier removal | |
| CN102037544A (zh) | 用氦气去除浮渣 | |
| KR20080100187A (ko) | 실리콘 웨이퍼의 표면층의 제거방법 | |
| US5840203A (en) | In-situ bake step in plasma ash process to prevent corrosion | |
| TWI489549B (zh) | 可減少損壞之低介電常數介電層蝕刻方法 | |
| JPWO2000033370A1 (ja) | ドライエッチング方法 | |
| JPH08279487A (ja) | プラズマ処理方法 | |
| JP2016009837A (ja) | 被処理体を処理する方法 | |
| CN101427354A (zh) | 用于含金属层的增强成核的半导体表面的等离子体处理 | |
| TW541358B (en) | Method for dry cleaning metal etching chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |