TW469492B - Method and apparatus of producing thin film of metal or metal compound - Google Patents

Method and apparatus of producing thin film of metal or metal compound Download PDF

Info

Publication number
TW469492B
TW469492B TW089125438A TW89125438A TW469492B TW 469492 B TW469492 B TW 469492B TW 089125438 A TW089125438 A TW 089125438A TW 89125438 A TW89125438 A TW 89125438A TW 469492 B TW469492 B TW 469492B
Authority
TW
Taiwan
Prior art keywords
metal
substrate
metal compound
thin film
particle dispersion
Prior art date
Application number
TW089125438A
Other languages
English (en)
Chinese (zh)
Inventor
Kuniaki Horie
Akira Fukunaga
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of TW469492B publication Critical patent/TW469492B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/087—Coating with metal alloys or metal elements only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • C23C24/103—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/106—Coating with metal alloys or metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW089125438A 1999-12-01 2000-11-30 Method and apparatus of producing thin film of metal or metal compound TW469492B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34196299A JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法

Publications (1)

Publication Number Publication Date
TW469492B true TW469492B (en) 2001-12-21

Family

ID=18350121

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089125438A TW469492B (en) 1999-12-01 2000-11-30 Method and apparatus of producing thin film of metal or metal compound

Country Status (5)

Country Link
US (2) US6517642B2 (https=)
EP (1) EP1106712A1 (https=)
JP (1) JP2001158966A (https=)
KR (1) KR20010062031A (https=)
TW (1) TW469492B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418516B (zh) * 2010-05-04 2013-12-11 Nat Univ Tsing Hua 奈米粒子膜與其形成方法與應用
CN111479953A (zh) * 2017-12-12 2020-07-31 株式会社Jcu 氧化物膜形成用涂布剂、氧化物膜的制造方法及金属镀覆结构体的制造方法

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972256B2 (en) * 1999-11-30 2005-12-06 Ebara Corporation Method and apparatus for forming thin film of metal
JP3479833B2 (ja) * 2000-08-22 2003-12-15 日本電気株式会社 レーザ修正方法および装置
US7087100B2 (en) * 2001-01-31 2006-08-08 General Electric Company Preparation of nanosized copper and copper compounds
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003007579A (ja) * 2001-06-19 2003-01-10 Matsushita Electric Ind Co Ltd 有機薄膜形成方法
JP4825373B2 (ja) * 2001-08-14 2011-11-30 ローム株式会社 強誘電体薄膜の製造方法およびこれを用いた強誘電体メモリの製造方法
DE10225606A1 (de) * 2002-06-07 2004-01-08 Daimlerchrysler Ag Halbleiterbauelement und Verfahren zur Herstellung
GB0225202D0 (en) 2002-10-30 2002-12-11 Hewlett Packard Co Electronic components
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
JP2004298669A (ja) * 2003-03-28 2004-10-28 Seiko Epson Corp セラミックス材料の塗布方法およびセラミックス膜
US7255943B2 (en) * 2003-05-14 2007-08-14 Hoya Corporation Glass substrate for a magnetic disk, magnetic disk, and methods of producing the glass substrate and the magnetic disk
US7867565B2 (en) * 2003-06-30 2011-01-11 Imec Method for coating substrates
US7579044B2 (en) * 2004-11-08 2009-08-25 Brewer Science Inc. Process and device for coating the outer edge of a substrate during microelectronics manufacture
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
GB2432044A (en) * 2005-11-04 2007-05-09 Seiko Epson Corp Patterning of electronic devices by brush painting onto surface energy modified substrates
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7727901B2 (en) 2007-05-03 2010-06-01 Innovalight, Inc. Preparation of group IV semiconductor nanoparticle materials and dispersions thereof
US20100176369A2 (en) * 2008-04-15 2010-07-15 Mark Oliver Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes
US8552490B2 (en) * 2010-06-18 2013-10-08 United Microelectronics Corp. Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure
JP6255650B2 (ja) 2013-05-13 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5760060B2 (ja) * 2013-09-27 2015-08-05 株式会社茨城技研 金属皮膜形成方法並びに金属皮膜形成製品の製造方法及び製造装置
US20150118487A1 (en) * 2013-10-25 2015-04-30 Colin A. Wolden Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers
KR101503735B1 (ko) 2014-01-20 2015-03-19 연세대학교 산학협력단 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법
CN104498944B (zh) * 2015-01-13 2017-10-17 南昌航空大学 一种利用纳米核壳粒子粉末激光熔覆制备表面陶瓷涂层方法
CN105506619A (zh) * 2015-12-31 2016-04-20 四川腾达电梯制造有限公司 一种电梯导轨表面处理工艺
WO2021126697A1 (en) * 2019-12-20 2021-06-24 Applied Materials, Inc. Bake devices for handling and uniform baking of substrates
CN113957434B (zh) * 2021-10-22 2022-11-04 燕山大学 一种在低碳钢表面制备高硬度高耐磨熔覆层的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR359002A (fr) 1905-10-30 1906-03-14 Anilin Fabrikation Ag Procédé de production d'un colorant nouveau de la série du triphénylméthane
FR732279A (fr) * 1931-05-02 1932-09-15 Procédé d'application d'or, d'argent et de platine sur métaux, notamment sur fers et aciers inoxydables
FR1214354A (fr) * 1957-11-12 1960-04-08 Power Jets Res & Dev Ltd Perfectionnements apportés aux traitements de pièces métalliques pour les rendre résistantes à la corrosion
US3540863A (en) * 1968-01-22 1970-11-17 Sylvania Electric Prod Art of protectively metal coating columbium and columbium - alloy structures
FR2157728A1 (en) * 1971-10-29 1973-06-08 Armines Niobium and niobium alloys - coated with silicon chromium and cobalt or nickel-contg mixt
FR2314267A1 (fr) * 1975-06-12 1977-01-07 Anvar Procede pour le traitement superficiel des aciers et produits obtenus
JPS5853068B2 (ja) * 1978-01-28 1983-11-26 工業技術院長 耐食性被覆された鉄又は鉄合金及びその製法
US4395440A (en) * 1980-10-09 1983-07-26 Matsushita Electric Industrial Co., Ltd. Method of and apparatus for manufacturing ultrafine particle film
GB2149800B (en) * 1983-10-22 1987-04-08 Nippon Paint Co Ltd Steel coating for preventing hydrogen embrittlement
US4820591A (en) * 1987-05-11 1989-04-11 Exxon Research And Engineering Company Corrosion resistant article and method of manufacture
US4800064A (en) * 1988-01-14 1989-01-24 Gte Products Corporation Process for producing tungsten heavy alloy sheet using hydrometallurgically produced tungsten heavy alloy
DE3830848C1 (https=) * 1988-09-10 1989-12-21 Boehler Ag, 4005 Meerbusch, De
US5587111A (en) * 1990-03-29 1996-12-24 Vacuum Metallurgical Co., Ltd. Metal paste, process for producing same and method of making a metallic thin film using the metal paste
US5834374A (en) * 1994-09-30 1998-11-10 International Business Machines Corporation Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates
JPH09281329A (ja) * 1996-04-17 1997-10-31 Ricoh Co Ltd 偏光子とその製造方法
JP2967734B2 (ja) * 1996-10-18 1999-10-25 日本電気株式会社 薄膜の形成方法
JP3205793B2 (ja) 1996-12-19 2001-09-04 株式会社巴製作所 超微粒子及びその製造方法
JP3356968B2 (ja) * 1997-07-08 2002-12-16 住友大阪セメント株式会社 透明導電膜とその製造方法および表示装置
US6124215A (en) * 1997-10-06 2000-09-26 Chartered Semiconductor Manufacturing Ltd. Apparatus and method for planarization of spin-on materials
US6168694B1 (en) * 1999-02-04 2001-01-02 Chemat Technology, Inc. Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418516B (zh) * 2010-05-04 2013-12-11 Nat Univ Tsing Hua 奈米粒子膜與其形成方法與應用
CN111479953A (zh) * 2017-12-12 2020-07-31 株式会社Jcu 氧化物膜形成用涂布剂、氧化物膜的制造方法及金属镀覆结构体的制造方法
CN111479953B (zh) * 2017-12-12 2023-10-17 株式会社Jcu 氧化物膜形成用涂布剂、氧化物膜的制造方法及金属镀覆结构体的制造方法

Also Published As

Publication number Publication date
US20010010837A1 (en) 2001-08-02
US20030098531A1 (en) 2003-05-29
KR20010062031A (ko) 2001-07-07
US6780245B2 (en) 2004-08-24
JP2001158966A (ja) 2001-06-12
EP1106712A1 (en) 2001-06-13
US6517642B2 (en) 2003-02-11

Similar Documents

Publication Publication Date Title
TW469492B (en) Method and apparatus of producing thin film of metal or metal compound
US7179503B2 (en) Method of forming thin metal films on substrates
TW480561B (en) Method and apparatus for forming a thin metallic film, and semiconductor device having such thin metallic film
JP2002008995A (ja) 薄膜形成方法及び薄膜形成装置
TW201250890A (en) Method and apparatus for drying a semiconductor wafer
JP2004500711A (ja) 金属キレートインクを用いる薄膜導体の直接印刷
TW200406270A (en) Metallic nickel powder and process for production thereof
JP2014009368A (ja) 成膜方法
US20030108683A1 (en) Manufacturing method for nano-porous coatings and thin films
KR100741040B1 (ko) 배선형성방법 및 장치
JP2008289967A (ja) 薄膜形成方法及び薄膜形成装置
CN111565870B (zh) 铜微粒子
JPH0524988B2 (https=)
JP4841338B2 (ja) 成膜方法、および装置
JP2011122182A (ja) ジルコニア膜の成膜方法
JP3238663B2 (ja) 材料蒸着方法
CN114535601B (zh) 一种免刮平的激光选区熔化工艺打印热电材料的方法及热电粉体作为打印原料免刮平的方法
CN1195681C (zh) 生产锂基阴极的方法及设备
JP5435220B2 (ja) レーザーアブレーションによる成膜方法、その方法に用いるレーザーアブレーション用ターゲット及びそのレーザーアブレーション用ターゲットの製造方法
TW201251548A (en) Method of forming copper wiring, method of manufacturing wiring board, and wiring board
JP2000096242A (ja) 液体材料気化装置
JPH06206796A (ja) Ｃｖｄ用原料ガスの発生装置
JPH0360732A (ja) 微粉末の製造方法と装置ならびにその利用方法
JP5649028B2 (ja) ジルコニア膜の成膜方法
JP2004225123A (ja) 基材表面に酸化物膜を形成する方法及び該方法に使用する装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent