JP2001158966A - 金属ないし金属化合物薄膜の作製方法 - Google Patents

金属ないし金属化合物薄膜の作製方法

Info

Publication number
JP2001158966A
JP2001158966A JP34196299A JP34196299A JP2001158966A JP 2001158966 A JP2001158966 A JP 2001158966A JP 34196299 A JP34196299 A JP 34196299A JP 34196299 A JP34196299 A JP 34196299A JP 2001158966 A JP2001158966 A JP 2001158966A
Authority
JP
Japan
Prior art keywords
metal
thin film
particle dispersion
ultrafine particle
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34196299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001158966A5 (https=
Inventor
Kuniaki Horie
邦明 堀江
Akira Fukunaga
明 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP34196299A priority Critical patent/JP2001158966A/ja
Priority to TW089125438A priority patent/TW469492B/zh
Priority to US09/726,552 priority patent/US6517642B2/en
Priority to KR1020000072227A priority patent/KR20010062031A/ko
Priority to EP00126292A priority patent/EP1106712A1/en
Publication of JP2001158966A publication Critical patent/JP2001158966A/ja
Priority to US10/315,170 priority patent/US6780245B2/en
Publication of JP2001158966A5 publication Critical patent/JP2001158966A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/087—Coating with metal alloys or metal elements only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • C23C24/103—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/106—Coating with metal alloys or metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP34196299A 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法 Pending JP2001158966A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP34196299A JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法
TW089125438A TW469492B (en) 1999-12-01 2000-11-30 Method and apparatus of producing thin film of metal or metal compound
US09/726,552 US6517642B2 (en) 1999-12-01 2000-12-01 Method and apparatus of producing thin film of metal or metal compound
KR1020000072227A KR20010062031A (ko) 1999-12-01 2000-12-01 금속 또는 금속화합물의 박막 제작방법 및 제작장치
EP00126292A EP1106712A1 (en) 1999-12-01 2000-12-01 Method and apparatus of producing thin film of metal or metal compound
US10/315,170 US6780245B2 (en) 1999-12-01 2002-12-10 Method and apparatus of producing thin film of metal or metal compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34196299A JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法

Publications (2)

Publication Number Publication Date
JP2001158966A true JP2001158966A (ja) 2001-06-12
JP2001158966A5 JP2001158966A5 (https=) 2005-04-07

Family

ID=18350121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34196299A Pending JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法

Country Status (5)

Country Link
US (2) US6517642B2 (https=)
EP (1) EP1106712A1 (https=)
JP (1) JP2001158966A (https=)
KR (1) KR20010062031A (https=)
TW (1) TW469492B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129227A (ja) * 2005-11-04 2007-05-24 Seiko Epson Corp 電子装置の製造方法、巻き取り製造工程、薄膜トランジスタ及び塗布装置
KR101503735B1 (ko) 2014-01-20 2015-03-19 연세대학교 산학협력단 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법
CN113957434A (zh) * 2021-10-22 2022-01-21 燕山大学 一种在低碳钢表面制备高硬度高耐磨熔覆层的方法

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US6972256B2 (en) * 1999-11-30 2005-12-06 Ebara Corporation Method and apparatus for forming thin film of metal
JP3479833B2 (ja) * 2000-08-22 2003-12-15 日本電気株式会社 レーザ修正方法および装置
US7087100B2 (en) * 2001-01-31 2006-08-08 General Electric Company Preparation of nanosized copper and copper compounds
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003007579A (ja) * 2001-06-19 2003-01-10 Matsushita Electric Ind Co Ltd 有機薄膜形成方法
JP4825373B2 (ja) * 2001-08-14 2011-11-30 ローム株式会社 強誘電体薄膜の製造方法およびこれを用いた強誘電体メモリの製造方法
DE10225606A1 (de) * 2002-06-07 2004-01-08 Daimlerchrysler Ag Halbleiterbauelement und Verfahren zur Herstellung
GB0225202D0 (en) 2002-10-30 2002-12-11 Hewlett Packard Co Electronic components
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
JP2004298669A (ja) * 2003-03-28 2004-10-28 Seiko Epson Corp セラミックス材料の塗布方法およびセラミックス膜
US7255943B2 (en) * 2003-05-14 2007-08-14 Hoya Corporation Glass substrate for a magnetic disk, magnetic disk, and methods of producing the glass substrate and the magnetic disk
US7867565B2 (en) * 2003-06-30 2011-01-11 Imec Method for coating substrates
US7579044B2 (en) * 2004-11-08 2009-08-25 Brewer Science Inc. Process and device for coating the outer edge of a substrate during microelectronics manufacture
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7727901B2 (en) 2007-05-03 2010-06-01 Innovalight, Inc. Preparation of group IV semiconductor nanoparticle materials and dispersions thereof
US20100176369A2 (en) * 2008-04-15 2010-07-15 Mark Oliver Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes
US8309185B2 (en) * 2010-05-04 2012-11-13 National Tsing Hua University Nanoparticle film and forming method and application thereof
US8552490B2 (en) * 2010-06-18 2013-10-08 United Microelectronics Corp. Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure
JP6255650B2 (ja) 2013-05-13 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5760060B2 (ja) * 2013-09-27 2015-08-05 株式会社茨城技研 金属皮膜形成方法並びに金属皮膜形成製品の製造方法及び製造装置
US20150118487A1 (en) * 2013-10-25 2015-04-30 Colin A. Wolden Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers
CN104498944B (zh) * 2015-01-13 2017-10-17 南昌航空大学 一种利用纳米核壳粒子粉末激光熔覆制备表面陶瓷涂层方法
CN105506619A (zh) * 2015-12-31 2016-04-20 四川腾达电梯制造有限公司 一种电梯导轨表面处理工艺
JP7120757B2 (ja) * 2017-12-12 2022-08-17 株式会社Jcu 酸化物膜形成用塗布剤、酸化物膜の製造方法及び金属めっき構造体の製造方法
WO2021126697A1 (en) * 2019-12-20 2021-06-24 Applied Materials, Inc. Bake devices for handling and uniform baking of substrates

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JPH09281329A (ja) * 1996-04-17 1997-10-31 Ricoh Co Ltd 偏光子とその製造方法
JP2967734B2 (ja) * 1996-10-18 1999-10-25 日本電気株式会社 薄膜の形成方法
JP3205793B2 (ja) 1996-12-19 2001-09-04 株式会社巴製作所 超微粒子及びその製造方法
JP3356968B2 (ja) * 1997-07-08 2002-12-16 住友大阪セメント株式会社 透明導電膜とその製造方法および表示装置
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007129227A (ja) * 2005-11-04 2007-05-24 Seiko Epson Corp 電子装置の製造方法、巻き取り製造工程、薄膜トランジスタ及び塗布装置
KR101503735B1 (ko) 2014-01-20 2015-03-19 연세대학교 산학협력단 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법
CN113957434A (zh) * 2021-10-22 2022-01-21 燕山大学 一种在低碳钢表面制备高硬度高耐磨熔覆层的方法

Also Published As

Publication number Publication date
US20010010837A1 (en) 2001-08-02
US20030098531A1 (en) 2003-05-29
KR20010062031A (ko) 2001-07-07
US6780245B2 (en) 2004-08-24
EP1106712A1 (en) 2001-06-13
TW469492B (en) 2001-12-21
US6517642B2 (en) 2003-02-11

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