KR20010062031A - 금속 또는 금속화합물의 박막 제작방법 및 제작장치 - Google Patents

금속 또는 금속화합물의 박막 제작방법 및 제작장치 Download PDF

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Publication number
KR20010062031A
KR20010062031A KR1020000072227A KR20000072227A KR20010062031A KR 20010062031 A KR20010062031 A KR 20010062031A KR 1020000072227 A KR1020000072227 A KR 1020000072227A KR 20000072227 A KR20000072227 A KR 20000072227A KR 20010062031 A KR20010062031 A KR 20010062031A
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KR
South Korea
Prior art keywords
metal
substrate
particle dispersion
thin film
ultrafine particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020000072227A
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English (en)
Korean (ko)
Inventor
호리에구니아키
후쿠나가아키라
Original Assignee
마에다 시게루
가부시키 가이샤 에바라 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마에다 시게루, 가부시키 가이샤 에바라 세이사꾸쇼 filed Critical 마에다 시게루
Publication of KR20010062031A publication Critical patent/KR20010062031A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082—Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/087—Coating with metal alloys or metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • C23C24/103—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/106—Coating with metal alloys or metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
KR1020000072227A 1999-12-01 2000-12-01 금속 또는 금속화합물의 박막 제작방법 및 제작장치 Ceased KR20010062031A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11-341962 1999-12-01
JP34196299A JP2001158966A (ja) 1999-12-01 1999-12-01 金属ないし金属化合物薄膜の作製方法

Publications (1)

Publication Number Publication Date
KR20010062031A true KR20010062031A (ko) 2001-07-07

Family

ID=18350121

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000072227A Ceased KR20010062031A (ko) 1999-12-01 2000-12-01 금속 또는 금속화합물의 박막 제작방법 및 제작장치

Country Status (5)

Country Link
US (2) US6517642B2 (https=)
EP (1) EP1106712A1 (https=)
JP (1) JP2001158966A (https=)
KR (1) KR20010062031A (https=)
TW (1) TW469492B (https=)

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JP3479833B2 (ja) * 2000-08-22 2003-12-15 日本電気株式会社 レーザ修正方法および装置
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US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003007579A (ja) * 2001-06-19 2003-01-10 Matsushita Electric Ind Co Ltd 有機薄膜形成方法
JP4825373B2 (ja) * 2001-08-14 2011-11-30 ローム株式会社 強誘電体薄膜の製造方法およびこれを用いた強誘電体メモリの製造方法
DE10225606A1 (de) * 2002-06-07 2004-01-08 Daimlerchrysler Ag Halbleiterbauelement und Verfahren zur Herstellung
GB0225202D0 (en) 2002-10-30 2002-12-11 Hewlett Packard Co Electronic components
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
JP2004298669A (ja) * 2003-03-28 2004-10-28 Seiko Epson Corp セラミックス材料の塗布方法およびセラミックス膜
US7255943B2 (en) * 2003-05-14 2007-08-14 Hoya Corporation Glass substrate for a magnetic disk, magnetic disk, and methods of producing the glass substrate and the magnetic disk
US7867565B2 (en) * 2003-06-30 2011-01-11 Imec Method for coating substrates
US7579044B2 (en) * 2004-11-08 2009-08-25 Brewer Science Inc. Process and device for coating the outer edge of a substrate during microelectronics manufacture
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
GB2432044A (en) * 2005-11-04 2007-05-09 Seiko Epson Corp Patterning of electronic devices by brush painting onto surface energy modified substrates
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7727901B2 (en) 2007-05-03 2010-06-01 Innovalight, Inc. Preparation of group IV semiconductor nanoparticle materials and dispersions thereof
US20100176369A2 (en) * 2008-04-15 2010-07-15 Mark Oliver Metalized Silicon Substrate for Indium Gallium Nitride Light-Emitting Diodes
US8309185B2 (en) * 2010-05-04 2012-11-13 National Tsing Hua University Nanoparticle film and forming method and application thereof
US8552490B2 (en) * 2010-06-18 2013-10-08 United Microelectronics Corp. Nonvolatile memory device with a high-K charge storage layer having a U-shaped,cross-sectional structure
JP6255650B2 (ja) 2013-05-13 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5760060B2 (ja) * 2013-09-27 2015-08-05 株式会社茨城技研 金属皮膜形成方法並びに金属皮膜形成製品の製造方法及び製造装置
US20150118487A1 (en) * 2013-10-25 2015-04-30 Colin A. Wolden Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers
KR101503735B1 (ko) 2014-01-20 2015-03-19 연세대학교 산학협력단 원자층 증착법으로 증착된 금속 산화물을 이용한 금속 황화물 합성 방법
CN104498944B (zh) * 2015-01-13 2017-10-17 南昌航空大学 一种利用纳米核壳粒子粉末激光熔覆制备表面陶瓷涂层方法
CN105506619A (zh) * 2015-12-31 2016-04-20 四川腾达电梯制造有限公司 一种电梯导轨表面处理工艺
JP7120757B2 (ja) * 2017-12-12 2022-08-17 株式会社Jcu 酸化物膜形成用塗布剤、酸化物膜の製造方法及び金属めっき構造体の製造方法
WO2021126697A1 (en) * 2019-12-20 2021-06-24 Applied Materials, Inc. Bake devices for handling and uniform baking of substrates
CN113957434B (zh) * 2021-10-22 2022-11-04 燕山大学 一种在低碳钢表面制备高硬度高耐磨熔覆层的方法

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Also Published As

Publication number Publication date
US20010010837A1 (en) 2001-08-02
US20030098531A1 (en) 2003-05-29
US6780245B2 (en) 2004-08-24
JP2001158966A (ja) 2001-06-12
EP1106712A1 (en) 2001-06-13
TW469492B (en) 2001-12-21
US6517642B2 (en) 2003-02-11

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