TW457602B - Flip chip metallization - Google Patents
Flip chip metallization Download PDFInfo
- Publication number
- TW457602B TW457602B TW088114052A TW88114052A TW457602B TW 457602 B TW457602 B TW 457602B TW 088114052 A TW088114052 A TW 088114052A TW 88114052 A TW88114052 A TW 88114052A TW 457602 B TW457602 B TW 457602B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- aluminum
- patent application
- copper
- scope
- Prior art date
Links
- 238000001465 metallisation Methods 0.000 title abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 44
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 38
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000010410 layer Substances 0.000 description 47
- 238000005516 engineering process Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- -1 copper metals Chemical class 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- LJEBXLIGJSSJOF-UHFFFAOYSA-M CO[Cr](=O)(=O)O Chemical compound CO[Cr](=O)(=O)O LJEBXLIGJSSJOF-UHFFFAOYSA-M 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002271 resection Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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Description
457 6 0 2 附件一:第88114052號專利申請案 中文說明書修正頁 民國90年8月呈
五、發明説明(1 ) 發明背景 I____ f請先閲讀背面之注意事項再填寫本頁} 用於電性接觸元件之封裝以及將其安裝在如印刷電路 板基底之焊接凸塊內接上的技術已廣泛的用於電子裝置的 製造產業》內接基底包括多種電子裝置的支持件,如矽及 陶瓷基底。爲了方便參考起見,在此將以通稱的印刷電路 板來表示此一支持件0 元件的封裝的形態既小且輕,並可利用焊接凸塊的精 細圖樣安裝在電路板上。一般而言,焊接凸塊或接觸墊以 鏡列的方式,形成在印刷電路板及元件封裝上,當適當的 放置元件.封裝時,印刷電路扳及元件封裝上的焊接凸塊或 焊墊相互的對齊。此技術用於倒裝片的技術中,其中元件 封裝之I c晶片的表面提供有接合的焊墊及凸塊,且I C 晶片係以倒置的方式安裝在印刷電路板上。 經濟部智葸財產局員工消費合作社印製 焊接凸塊於組裝前,形成在I / 0接觸墊的陣列上。 爲了利於局部的或者選擇性的將焊錫施加至接觸墊的陣列 上,接觸墊的表面需爲可沾附焊錫的*用於積體電路板或 卡的一般金屬內接線路系鋁製的材質》然而嘗試過直接焊 接至鋁金屬的技術後,一般均認爲鋁並非理想的焊接材料 。因此,在工業界的實務上,一般是施加一層金屬覆層至 鋁接觸墊上。此被覆一般稱之爲下凸塊金屬化技術(under bump metallization, UBM)。 用於U B M技術的金屬或合金必須相當完整的黏附在 鋁材上,且可沾附一般的焊錫等焊料,並具有很高的導電 性。一種符合此一需求的結構係鉻銅合金。首先,沈積鉻 -4 - 本紙浪尺度適用中.國國家揉準(CNS ) A4规格(210X 297公釐) 457602 Α7 Β7 五、發明說明(2 ) 金屬以黏附於鋁材上,接著將銅施加在鉻金屬上以提供 可沾附焊料的表面。鉻金屬可相當完好的黏附在多種金屬 以及有機及無機材料上。據此,其可完整的黏附至I C製 程中常見的 S i 02,SINCAPS,polymide, 附至銅或鋁的金屬上。因此 > 直接將銅薄 可溶至熔融的焊料內,且隨之焊料會從鉻 。爲了確保焊料及U B Μ間的界面整合性 材問使用鉻及銅的複合材料或合金層。 雖然此U Β Μ覆層的效果不錯,並成 界,然而此種多層被覆會增加I C封裝操 等介電材料或黏 層覆在鉻金屬上 杂屬層脫溼乾化 ,一般在銘及銅 功的使用於工業 作的複雜度及成 本。且此方式亦使系統增加一層新的金屬程序(鉻)。從 Β Μ被覆的材料 獲得更加的結果 相容性及及簡化程序的觀點,如果用於U 相同於被焊接的基材,亦即銅及鋁,則可 請ι 先 閲 讀 背 S} 之 注 意 事 項 % 1ί裝 本 . 頁 訂 ▲ 經濟部智慧財產局員工消費合作社印製 發明總結 本發明提供一種新而簡單的UBM,其僅使用鋁及銅 金屬。薄鋁層提供在I C的鋁接合位置上,並直接將一較 薄的銅金屬層黏附至鋁金屜層上•雖然就習知技術而言, 直接將銅接合至鋁金屬上並不易實施,但如果能適當的處 理鋁材的表面,則以濺鍍沈積製成便能輕易的實施該接合 〇接著,便可利用習知的方式將銅層焊接至下·-個內連接 層上。新的U Β Μ可用於任何包括表面安裝的內連接配置 中’並非常適合於倒裝片的組裝。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -5- 457602 Α7 Β7 五、發明說明(4 2 8 4 1 4 2 4 3 4 4 4 7 4 5 6 7 穿孔 導線 3 3及3 4接地內接 I C基底 氧化層 鋁接合位置 覆蓋層 下凸塊金屬化 基底 氧化層 覆層 鋁接合位置 下凸塊金屬化 銅金屬層 融刻光軍 焊接凸塊 先閱讀rvs-之注意事項"4寫本頁) 詳細描述 參考圖 印刷電路線 經濟部智慧財產局員工消費合作社印製 顯示一印刷電路板1 1的切開部位 > 其屮 將4 χ6焊接凸塊1 4與外側的I / 〇接觸 墊1 3陣列內接。圖中顯示一 ΰ金位置1 5 ,用以安裝倒 裝片的元件。依據組裝的尺寸及各種元件的大小,整個電 路板可包含許多倒裝片的安裝位置。在圖1的實施例中’ 倒裝片封裝1 5之外緣將近4 χ7 m m,而4 χ6的焊接凸塊 本紙張尺度適用令國國家標準(CNS) A4規格(21C X 297公釐〉 457602 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明p ) 1 4陣列則稍小一些。1 6標示一電容器。圖1的印刷電 路板係用於單內線記憶體模組(S I Μ Μ ),然而,此技 術及發明係涵括了焊錫安裝裝置的較廣領域,並應用於前 述的其他內接基底。
參考圖2,一凹槽式晶片(recessed-chip)模組包括 I C晶片2 1及中間的內接基底(I I S ) 22。I IS 可以是任何適當的材料|如環氧樹脂或陶瓷,但較佳的係 矽材料。晶片2 1以倒裝片的方式藉由內接2 3接合至 ί I S 1肉接2 3通常是焊錫,但亦可爲其他的導電金屬 如導電環氧樹脂等。用於倒裝片接合的技術並非本發明的 一部份,其接合可使用如焊接凸塊、球接合或導爾環氧樹 脂等。此I I S 22接著以焊料或導電環氧樹脂I/O 內接,倒裝地接合在印刷線路板(P W Β ) 2 4上。在凹 槽式的晶片M C Μ中,P W Β 2 4提供有凹部2 5 ,使 得晶片2 1可內凹於P W Β的下表面。如圖2所示’凹部 可延仲穿過P W Β的厚度方向,或僅部分的延仲。在所示 的配置中,P W Β爲單層板,並具有雙側的印刷電路11其 亦可爲多層P W Β。P W β可內接至系統印刷線路板上( 未示)。P W Β的切除部位說明了所示的P W Β僅爲整· _ P W Β的一小部位,且整個p w β可容納許多的I 1 S S
Q IIS 2 2可以爲主勤裝置,如方形的封裝1站具 漸4窗 有大的I / 〇接合位置陣列’以方形或矩形的规劃’ . ‘. 1}\\ 於基底的周圍。替代的1 1 s可以是被動的內接基底’ 本紙張尺度適用中國國家標準<CNS)A4規格(2〗0 * 297公楚)
---------I I I < * I I-----訂---------線 C靖先閱讚背面乏注意事項為填寫本頁) 457602
五、發明説明(6 ) 矽,且具有單側或雙側的印刷電路。在圖2的內接配置中 錫球2 6安置於.PWB 1 4上的接合墊上,且接合墊經 由導線2 7而內接,導線2 7通過穿孔2 8而延伸,並經 過PWB底部的導線2 9而通置另一個接觸位置(未示) 。如果PWB上焊有另一片電路板,或是在PWB製作有 線接合,則另一個接觸位置可以是另一個接合墊。替代的 ,例如,如果PWB爲插裝式電路板,接觸位置可以是插 槽式內接。爲了達到所述的目的,內接26、27、28 及29爲電源內接,且包括31 、32、33及34的類 似內接爲接地內接。其他未顯示的I /〇接線爲習知者。 圖3顯示更詳細的I C晶片接合位置圖。此圖亦可表 示其他的內接基底,其在接合位置上具有鋁金屬。圖3中 ,1C基底4 1具有氧化層4 2及形成在氧化層窗口內的 鋁接合位置4 3。覆蓋層4 4爲聚醯亞胺或SINC APS。熟悉 相關技術之人應可了解,此圖並未按比例繪製。接合位置 4 3可以是內層金屬內接或是一基底,如源極汲極窗,的 接觸部。下部的半導體結構並非本發明的重點’因此不加 以顯示。.本發明的目的’在於以U B Μ覆層覆蓋鋁接合位 置4 3的表面,接著安置錫球或凸塊。據此,選擇性地施 加UMB 47至接觸區43上。 ; 習知的U Β Μ常是利用添加程序來施加1如提離光罩 (lift-off mask)的程序。然而,由於去除程序較簡單’並 提供較小的外型,而具有較佳的尺寸控制。本發明之 U BM的優點在於可由去除程序選擇性的施加’亦即’覆 ^^^^1 ^^^^1 am ^^^^1 m^i I (請先閲讀背面'之注意事項再填寫本頁) 、?τ 丨線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中固國家橾準(CNS>A4说格(2丨0乂297公釐.) -9- 4 57 60 2 A7 B7 五、發明說明《) 蓋沈積、微影蝕刻等製成° 本發明之覆有υ Β Μ的結構係由循序的濺鍍鋁及銅金 屬層來獲得。以下參考圖4 - 6將對此程序作一描述。 圖4中,顯示部分的基底5 1 ,並顯示有氧化層5 2 '覆層5 3及鋁接合位置5 4。此爲組裝倒裝片之前’ I C晶片封裝的一般結構。在施加U Β Μ層後,鋁接 觸部的表面先進行輕微的飩刻,或是藉由後濺鍍’以確保 鋁沈積的黏附。接著從鋁靶漉鍍來實施鋁υ Β Μ層5 5的 沈積°此層的厚度1合併有1 c上的鋁接觸墊厚度’應爲 ◦ . 5 — 2 . 0微米。目前I c技術的的鋁內接層厚度一 般小於0.5微米。而沈積的鋁金屬層約爲0·1至2微 米°參考圖5,接著直接將U B Μ的銅金屬層5 6 鍍至 鋁金屬層上。在不切斷真空的其情況下1直接於相同的製 置內依序的實施上述的沈稹是最有效的方式·否則’如果 以分離的裝置進行沈積,或將真空切斷’鋁層須再以後m 鍍的程序來移除本身的氧化層。因此,在較佳的實施例中 ,金屬層在包含有鋁靶及銅靶的濺鍍裝置內濺鍍u較佳的 ,此程序可由包含有鋁沈積站及銅沈積站的群組式裝置來 實施。並外,只要在沈積銅金屬層之前,適當的保護及淸 洗鋁金屬層的表面,亦可使用其他的金屬沈積技術’如蒸 鍍。 銅金屬層5 6較佳的具有0 · 5 0 - 2微米的厚度。 銅金屬層可沾附一般焊接凸塊的焊錫材料°此外銅與丨旱料 的共熔點較低,且在焊接溫度下,銅金屬層的表面會m於 請- 先 閱 讀 背· ϊι 之 注 t 事 項 再- 填 寫 本 頁 裝 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用ΐ國國家標準(CNS)A4規格(210 X 297公釐) -10 - 457 602
f 經濟部智慧財產局員工消費合作社印製 焊料內,而形成物理及電性的接合。即使所有的銅均溶於 焊錫的錫層內,由於鋁層的表面不會氧化,因此焊錫仍會 乾化而接合到鋁金屬層上。 如圖6所示,施以蝕刻光罩5 7以罩住焊料凸塊區。 蝕刻光罩較佳的是習知的光阻,且係藉由將光阻旋轉被覆 (spinning )於表層並以適當的反應性輻射來製作出光阻的 圖案。圖6顯示顯影後的光阻。以可使用其他的光罩技術 ,如氧化物硬式光罩。此外,亦可使用其他的微影製程, 如e —光束或X —射線。 將光.罩置放後,以習知的蝕刻溶液蝕刻銅金屬層5 6 及沈積的鋁金屬層5 5。銅金屬可由如氯化鐵、硫酸及鉻 酸甲或硫酸及過氧化氫的混合物來蝕刻。鋁金屬則可由稀 釋的H F或P A E的蝕刻溶劑來加以蝕刻。圖’7顯示蝕刻 後的結果。參考圖8 ,光阻5 7被移除|並以習知的方式 將焊接凸塊或錫球5 8加至UBM上。 以下的例子用來說明本發明的功效。 例子 金屬層5 5及5 6的沈積係以濺鍍薄膜公司( Sputtered Film Inc)的 Endeavor cluster;設備所實施。在沈 積之前,將晶圓在1 0 5 °C下烘烤1小時,並將晶圓放入 裝置的匣具組件內。在群阻設備的蝕刻站中|以中度的乾 式蝕刻將晶圓預洗。蝕刻的條件爲3 5 0 W,1 2 0秒1 並通以6 s c cm的A r氣體。接著將晶圓移至鋁金屬的 本紙浪尺度逍用中困國家標準(CNS ) A4规格(210X 297公ϋΰ - Π - (請先Μ讀背面之注意事項再填寫本頁) -裝· -e .-線_ 457602 A7 B7 五、發明說明(10 ) 表丄 I II III Sn 5 63 95 Pb ^ 95 37 0 Sb _ 0 0 5 (請先閱讀背面之注意事項再填寫本頁) 利用此U B Μ焊接的I C元件可符合嚴格的測試及 ί C性能標準。 對於熟悉相關技術之人應可發現:如果IC製程提供 足夠厚度的鋁接合位置,則可去除鋁金屬層5 5的沈積。 因此,在本發明的實施中,由I C製程所產生之位於接合 位圄上的最後金屬層,或金屬墊可具有小於0 . 5 的 厚度'在此例中,僅需在沈積銅金屬前,將鋁金屬表面上 的氧化層移除。此程序可使用上述的乾式預洗。 經濟部智慧財產局員工消費合作社印製 鋁金屬層的預洗步驟是相當重要的程序,其中此鋁金 屬層在實施本發明的步驟前已暴露於外界空氣中較佳的 是將此層的表面進行乾式蝕刻,亦即,後濺鍍或R 1 E以 提供潔淨的鋁金屬表面來進一步的沈積銅金屬°至少從峩 而移除1 0 0 Angstroms,且較佳的是移除4 ◦ Q Angstroms ,而獲得期望的表面條件。爲了達成本發明的S的’此一 表面稱作初生表面。當在离空裝置中沈積鋁金屬層時’亦 提供-·-初生表面。 如上所述,上述程序的優點在於除去程序的使用1亦 即,可利用光罩及蝕刻來賞施U B Μ。其他已知的U B Μ 除去程序,如美國專利申請號第0 8 / 8_ 2 5 ’ 9 2 3 ’ 本紙張尺度適用中國國家標準(CNS>A4規格(210 X 297公釐) -13 - 457602 Α7 Β7 五、發明說喷〇1 ) 中請於〇 4 / 0 2 / 9 8。在此程序中,鉻金屬被用於 ϋ β μ中。用來將鉻金屬層圖案化的蝕刻劑侵蝕鋁金屬層 °因此,如果實施U Β Μ的表面含有暴露的鋁接合位置, 程序將會不理想。在一些封裝的應用中,此種情形更爲明 顯’如晶片-上-晶片的情形,其中,第二層晶片,亦即 ’支撐第一晶片的晶片,至少部分地線接合至下一層。此 晶片需耍U Β Μ接觸墊或鋁金屬墊。可先決定兩種內接形 式的鋁金屬墊,接者以上述的技術,簡單的將接收U Β Μ 的鋁金屬墊選擇性地以銅金屬被覆。在此情形下,線接合 位置之鋁金屬層的厚度至少須1 · 0微米爲佳,使得線接 合位置可承受U Β Μ的蝕刻程序。一般的鋁蝕刻步驟係可 加以控制,而能使其厚度達到上述的結果。 本發明之多種其他的改良將可由熟悉相關技術之人思 及。所有來自此說明書之具體技術的衍生係依據本發明的 原理及其等效物,藉此而開發出的技術將落在本發明及其 申請專利範圍內。 --------III — — --------訂·------1 ~ 線 I . 一. ^ (請先間讀背面-之注意事項再填寫本頁) 經濟部智慧財產局負工消費合作社印製 -14 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮)
Claims (1)
- 457802 附件二:第88114052號專利申請案 中文申請專利範圍修正本民國9〇年8月呈 六、申請專利範圍 1 . 一種將1C晶片接合至支持基底的製程,該1C 晶片具有鋁接合位置,包括步驟: (請先閱讀背面之注意事項再填窝本頁) a ·將1C晶片置放於真空室內, 中》(V. b .在該鋁接合的位置上提供一初生的鋁表面,· c ·在該初生的鋁表面上沈積一銅金屬層, d .將該銅金屬層焊接至該支持基底上。 2 .如申請專利範圍第1項的製程‘,其中銅金屬層係藉 由在I C晶片上沈積一覆蓋層來選擇性的施加至該初生的 鋁金屬表面,以光罩罩住部分該覆蓋層而留下部分暴露的 該覆蓋層.,並蝕刻該暴露的覆蓋層。 3 .如申請專利範圍第1項的製程,其中該初生的鋁金 屬表面係由乾式蝕刻該鋁接合位置的表面來提供。 4 _如申請專利範圍第3項的製程,其中乾式蝕刻該鋁 金屬層表面及沈積該銅金屬層的步驟係在不切斷真空的情 形下,於相..同的裝置中實施。 5 .如申請專利範圍第1項的製程,其中藉由在真空裝 經濟部智慧財產局員工消費合作杜印製 置中沈積該鋁金屬層,而提供初生的鋁金屬表面,且在不 切斷真空的情形下,於相同的裝置中將該銅金屬層沈積於 該鋁金屬層的表面。 胃 6 .如申請專利範圍第4項的製程λ.其中鋁金屬層具有 至少0 . 5 y m的厚度。 7 .如申請專利範圍第6項的製程,其中銅金屬層具有 至少0 . 5 y m的厚度。 8 .如申請專利範圍第5項的製程,其中鋁金屬層具有 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公梦) 457602 A8 BS C8 D8 六、申請專利靶圍 至少〇.5vm的厚度。 (請先聞讀背面-之注意事項再填寫本頁) 9 .如申請專利範圍第8項的製程,其中銅金屬層具有 至少〇.的厚度。 1 0 . —·種將I C晶片接合至支持基底的製程,該I c 晶片具有鋁接合位置,包括步驟: a .將I C晶片置放於真空室內, b .在該濺鍍裝置內建立一真空,i不切斷該真空: 1 在該鋁接合位置上沈積一鋁金屬層, 1 i .在該鋁金屬層上沈積一銅金屬層。 1 1 ,如申請專利範圍第1 0項的製程,其中藉由施加 光阻至該銅金屬層,而在該鋁金屬層及該銅金屬層上製作 圖案,在該光阻上製作圖案以暴露出該銅金屬層部分,並 將該銅金屬層部分及其下部的鋁金屬層蝕刻去除。 1 2 .如申請專利範圍第1 1項的製程,其中鋁金屬層 具有至少0 . 5 μιη的厚度,且銅金屬層具有至少〇 . 5 # m的厚度。 13. —種積體電路封裝,包括: 經濟部智慧財產局員工消費合作社印製 a .接附於一支持基底上的一積體電路晶片, b ·該I C晶片上的至少一鋁接合位ί, c .直接施加至該鋁接合位置上的_金屬層,及 d .自該銅金屬層至該支持基底的一焊料內接。 1 4 .如申請專利範圍第1 3項的積體電路封裝,其中 鋁金屬層具有至少0.5的厚度。 1 5 .如申請專利範圍第1 3項的積體電路封裝,其中 -2- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 457602 AS B8 C8 D8 、申請專利範圍 銅金屬層具有至少0.5的厚度》 (請先M讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
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US09/172,467 US6130141A (en) | 1998-10-14 | 1998-10-14 | Flip chip metallization |
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US (2) | US6130141A (zh) |
EP (1) | EP0994507B1 (zh) |
JP (1) | JP3554685B2 (zh) |
KR (1) | KR100654823B1 (zh) |
DE (1) | DE69918631T2 (zh) |
SG (1) | SG93844A1 (zh) |
TW (1) | TW457602B (zh) |
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1998
- 1998-10-14 US US09/172,467 patent/US6130141A/en not_active Expired - Lifetime
-
1999
- 1999-08-17 TW TW088114052A patent/TW457602B/zh not_active IP Right Cessation
- 1999-10-05 DE DE69918631T patent/DE69918631T2/de not_active Expired - Lifetime
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US6130141A (en) | 2000-10-10 |
EP0994507A2 (en) | 2000-04-19 |
DE69918631T2 (de) | 2005-08-11 |
EP0994507A3 (en) | 2000-08-16 |
DE69918631D1 (de) | 2004-08-19 |
JP3554685B2 (ja) | 2004-08-18 |
KR20000028968A (ko) | 2000-05-25 |
JP2000124265A (ja) | 2000-04-28 |
EP0994507B1 (en) | 2004-07-14 |
KR100654823B1 (ko) | 2006-12-08 |
SG93844A1 (en) | 2003-01-21 |
US6597069B1 (en) | 2003-07-22 |
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