CN102747326A - 镀膜件的制备方法及由该方法制得的镀膜件 - Google Patents

镀膜件的制备方法及由该方法制得的镀膜件 Download PDF

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CN102747326A
CN102747326A CN2011101007428A CN201110100742A CN102747326A CN 102747326 A CN102747326 A CN 102747326A CN 2011101007428 A CN2011101007428 A CN 2011101007428A CN 201110100742 A CN201110100742 A CN 201110100742A CN 102747326 A CN102747326 A CN 102747326A
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copper
cobalt
preparation
plated film
powder
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张新倍
陈文荣
蒋焕梧
陈正士
林顺茂
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract

本发明提供一种镀膜件的制备方法，其包括如下步骤：提供基材；采用粉末冶金法，以金属铜粉和钴粉为原料制备铜钴复合靶；采用磁控溅射法，以铜钴复合靶为靶材在基材表面溅射形成铜钴合金层。本发明所述铜钴合金层的制备利用铜和钴原子同时溅射并沉积于基材表面以及较低的沉积温度，制备出超饱和的铜钴合金。所述镀膜件的制备方法工艺稳定、可靠且环保。本发明还提供一种由上述方法制得的镀膜件。

Description

镀膜件的制备方法及由该方法制得的镀膜件
技术领域
本发明涉及一种镀膜件的制备方法及由该方法制得的镀膜件。
背景技术
为在基材表面获得合金涂层，常采用热浸镀或热喷涂的方法。金属铜(Cu)和钴(Co)价格低廉，性能优良，在工业上有着广泛的应用。然而由于铜和钴的混合热为正值，合金熔炼的过程中铜钴合金易发生亚稳相分解(Spinodal分解)，分解成富铜相和富钴相；高温急冷时，铜和钴也会发生相分离。由于热浸镀或热喷涂均需要对合金原料进行熔炼，因此采用热浸镀或热喷涂的方法在基材表面较难形成稳定的铜钴合金层。
发明内容
有鉴于此，有必要提供一种可形成稳定的铜钴合金层的镀膜件的制备方法。
另外，还有必要提供一种由上述方法所制得的披覆有铜钴合金层的镀膜件。
一种镀膜件的制备方法，其包括如下步骤：
提供基材；
采用粉末冶金法，以金属铜粉和钴粉为原料制备铜钴复合靶；
采用磁控溅射法，以上述步骤制备的铜钴复合靶为靶材，在基材表面溅射形成铜钴合金层。
一种镀膜件包括基材及形成于基材上的铜钴合金层，该铜钴合金层采用溅射法形成。
本发明镀膜件的制备方法在形成铜钴合金层时，采用PVD镀膜技术，通过制备铜钴复合靶和对溅射温度的控制，从而于基材表面形成超饱和的铜钴合金层。所述镀膜件的制备方法工艺稳定、可靠且环保。
附图说明
图1是本发明一较佳实施例镀膜件的剖视图。
图2为本发明一较佳实施例真空镀膜机的俯视示意图。
主要元件符号说明
镀膜件 10
基材 11
铜钴合金层 13
真空镀膜机 20
镀膜室 21
铜钴复合靶 23
轨迹 25
真空泵 30
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
本发明一较佳实施方式的镀膜件10(如图1所示)的制备方法包括如下步骤：
提供基材11，该基材11的材质可为不锈钢或铜合金。
对基材11进行预处理。该预处理包括常规的除油、除蜡、酸洗、中和、去离子水清洗、烘干等步骤。
请参阅图2，提供一真空镀膜机20，该真空镀膜机20包括一镀膜室21及连接于镀膜室21的一真空泵30，真空泵30用以对镀膜室21抽真空。该镀膜室21内设有转架(未图示)和相对设置的二铜钴复合靶23。转架带动基材11沿圆形的轨迹25公转，且基材11在沿轨迹25公转时亦自转。
所述铜钴复合靶23中铜和钴的质量比介于1:4和4:1之间。该铜钴复合靶23的制备采用常规的粉末冶金的方法，使用的原料为金属铜粉和金属钴粉，其中金属铜粉的纯度＞99.9%，金属铜粉的粒径为10～100μm；金属钴粉的纯度＞99.9%，金属钴粉的粒径为10～80μm；按上述配比将金属铜粉及金属钴粉放入一球磨机(未图示)中进行球磨120～200min，使它们混合均匀，然后取一定量的球磨后的混合物进行热等静压制成一坯体，经1150～1200℃烧结1～1.5h，再自然冷却即可。
采用磁控溅射法在预处理后的基材11的表面沉积一铜钴合金层13。溅镀该铜钴合金层13在所述真空镀膜机20中进行。溅镀时，加热镀膜室21至基材11的温度为120～180℃，向镀膜室21内通入工作气体氩气，氩气流量为100～300sccm，开启铜钴复合靶23，设置铜钴复合靶23的功率为6～13kw，对基材11施加-100～-200V的偏压，镀膜时间为30～50min。该铜钴合金层13的厚度为120～200nm。溅射时铜和钴原子同时溅射并沉积于基材11上，由于基材11的温度较低，铜和钴难以发生相分离，从而可制备出超饱和的铜钴合金层13。
请再一次参阅图1，由上述方法所制得的镀膜件10包括基材11及形成于基材11上的铜钴合金层13。
该基材11的材质可为不锈钢或铜合金。
该铜钴合金层13中铜和钴的质量比介于1：4和4：1之间。该铜钴合金层13具有优异的力学和电学性能，该镀膜件10可作为有接地导电性需求的外观件使用。
下面通过实施例来对本发明进行具体说明。
实施例1
本实施例所使用的真空镀膜机20为中频磁控溅射镀膜机。
本实施例所使用的基材11的材质为不锈钢。
制备铜钴复合靶23：将质量比为4:1的金属铜粉(粒径为30～60μm)和金属钴粉(粒径为30～60μm)放入一星式球磨机中进行球磨，球磨时间为200min，热等静压制成一坯体，经1180℃烧结1h。
溅镀铜钴合金层13：铜钴复合靶23的功率为8kw，氩气流量为300sccm，对基材11施加-180V的偏压，镀膜温度为150℃，镀膜时间为30min，该铜钴合金层的厚度为130nm。
实施例2
本实施例所使用的真空镀膜机20与实施例1中使用的相同。
本实施例所使用的基材11的材质为铜合金。
制备铜钴复合靶23：将质量比为1:4金属铜粉(粒径为30～60μm)和金属钴粉(粒径为30～60μm)放入一星式球磨机中进行球磨，球磨时间为120min，热等静压制成一坯体，经1200℃烧结1.5h。
溅镀铜钴合金层13：铜钴复合靶23的功率为13kw，氩气流量为300sccm，对基材11施加-100V的偏压，镀膜温度为180℃，镀膜时间为50min，该铜钴合金层的厚度为200nm。
本发明镀膜件10的制备方法在形成铜钴合金层13时，采用PVD镀膜技术，通过制备铜钴复合靶23和对溅射温度的控制，从而于基材11表面形成超饱和的铜钴合金层13。所述镀膜件10的制备方法工艺稳定、可靠且环保。

Claims (9)

1.一种镀膜件的制备方法，其包括如下步骤：
提供基材；
采用粉末冶金法，以金属铜粉和钴粉为原料制备铜钴复合靶；
采用磁控溅射法，以上述步骤制备的铜钴复合靶为靶材，在基材表面溅射形成铜钴合金层。
2.如权利要求1所述的镀膜件的制备方法，其特征在于：所述基材的材质为不锈钢或铜合金。
3.如权利要求1所述的镀膜件的制备方法，其特征在于：所述铜钴复合靶中铜和钴的质量比介于1:4和4:1之间。
4.如权利要求3所述的镀膜件的制备方法，其特征在于：所述制备铜钴复合靶的步骤的工艺参数为：金属铜粉的纯度大于99.9%，金属铜粉的粒径为10～100μm；金属钴粉的纯度大于99.9%，金属钴粉的粒径为10～80μm；金属铜粉与金属钴粉的质量比在1:4至4:1之间，该金属铜粉与金属钴粉的混合物被球磨120～200min，热等静压制成一坯体，经1150～1200℃烧结1～1.5h，再自然冷却。
5.如权利要求1所述的镀膜件的制备方法，其特征在于：所述溅射形成铜钴合金层的步骤的工艺参数为：铜钴复合靶的功率为6～13kw，以氩气为工作气体，氩气流量为100～300sccm，对基材施加-100～-200V的偏压，溅射温度为120～180℃，镀膜时间为30～50min。
6.如权利要求1所述的镀膜件的制备方法，其特征在于：该铜钴合金层的厚度为120～200nm。
7.如权利要求1所述的镀膜件的制备方法，其特征在于：该镀膜件的制备方法还包括在溅镀铜钴合金层前对基材进行预处理的步骤。
8.如权利要求7所述的镀膜件的制备方法，其特征在于：所述预处理的步骤包括除油、除蜡、酸洗、中和、去离子水清洗及烘干步骤。
9.一种由权利要求1-8中的任一项所述的方法制得的镀膜件。
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