TW420867B - Semiconductor device and the manufacturing method thereof - Google Patents
Semiconductor device and the manufacturing method thereof Download PDFInfo
- Publication number
- TW420867B TW420867B TW085105952A TW85105952A TW420867B TW 420867 B TW420867 B TW 420867B TW 085105952 A TW085105952 A TW 085105952A TW 85105952 A TW85105952 A TW 85105952A TW 420867 B TW420867 B TW 420867B
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- manufacturing
- semiconductor device
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
經濟部中央橾準局貝工消费合作社印裝 A7 B7五、發明説明(1 ) 〔技術之領域〕 本發明係與半導體裝置及其製造方法有關,尤與極薄 ,因彎曲應力破損之虞少,妥適於各種卡片之半導體裝置 及能穗定且低廉形成此種薄半導體裝置之半導體裝®之製 造方法有關。 〔先前之技術及問題〕 先前曾提出利用極薄之半導體裝置,形成I C卡等各 種卡片之技術,惟先前此種薄半導體裝置,因易變簿曲應 力損壤,故不易獲得實用上充分滿意之各種卡片。 薄半導體裝置之先前之組合技術,係記載於例如「 LSI— Handbook」(日本社團法人電子通信學會編株式 會社幾社,昭和59年(西元1984年)11月30發 行,第4 0 6頁〜4 1 6頁)等*該等先前之半導體裝置 之組合技術中,則使用既使進行直接手處理亦不會裂開之 具有略2 0 0 pm以上厚度之半導體製品。 如周知*減薄半導體製品之方法,應用硏磨法。但, 以硏磨法欲將半導體製品均勻,例如以5 %內加工精度加 工時,必須高精度且高再現性之半導體製品與硏磨裝置之 平行度,而此種極高之平行度,必需極高昂之裝置,故寅 用上有困難。 又,亦有模擬半導體製品硏磨之方法,惟以該方法硏 磨大面積領域時,所裔時間顯著拉長致生產性降低。 又,將半導體製品厚度,硏磨至例如〇.l#m之極 ------:---^---^----π------^ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度遑用中國國家標準(CNS ) Μ说格(2丨0Χ297公釐) 經濟部中央樣準局貝工消费合作社印裝 A7 _ B7 __五、發明説明(2 ) 薄程度時,有因硏磨產生之應力破壞形成於半導體製品表 面之電晶體等各種半導體設備遭破壞之問題。 更以上述先前之技術直接以手處理此種薄半導體晶片 時*有半導體晶片本身遭破壞之問題,難以在髙產率和低 成本下形成半導體裝置。 〔發明之目的〕 故本發明之目的在提供可解決先前技術具有之上述問 題,遭彎曲應力破壞小,可利用於各種卡片之半導體裝置 本發明之其他目的在提供可將半導體晶片厚度減薄至 0. 1〜11 Opm程度,且可將此種極薄之晶片,不致 發生開裂以手處理之半導髋之製造方法。 〔發明之方法及作用〕 爲達成上述目的,本發明之半導體裝置,係經含多數 導電性粒子於其中之有機接著劑層相對配置薄半導體晶片 與基板,更經上述導電性粒子,互以電連接設於上述半導 體晶片之上述基板側表面上之導電性膜而成之P a d,與 設於上述基板之上述半導體晶片側表面上之基板電極。 互相相對配置之薄半導體晶片與可撓性材料製基板, 因互以上述有機接著劑粘接,固定,故即使外加鸞曲應力 遭破壤之可能性彎小。 又,半導體晶片與基板間之電連接係由含於上述有機 接著劑層中之導電性粒子完成。該導電性粒子係受分別設 本紙張尺度逋用中國國家標準(CNS ) A4洗格(210X297公釐> —ς . ---------襄------1Τ------i (請先53讀背面之注意事項再填寫本頁) 經濟部中央橾隼局員工消费合作社印裝 ? 〇3b 7 ^ A7 B7五、發明説明(3 ) 於上述半導體晶片與基板互相對位置之P a d與電極問所 附加之應力變形,因以該變形之導電性粒子電接上述半導 體晶片與基板間,故可確實以電連接上述P a d與電極間 0 上述半導體晶片上,形成具有所定圖案之鈍化膜,上 述P a d設於未形成鈍化膜之部分。因P a d厚度比鈍化 膜厚度小,故有效抑制互相對之P a d與電極間存在之上 導《性粒子移至外部*因而上述P a d與電極間上述導電 性粒子確實以電連接。 又,達成本發明之其他目的之本發明之半導體之製造 方法,係將貼於帶上之半導體製品,在該製品之表面方向 內以高速旋轉或向橫方向往復運動,與蝕刻液接觸,將半 導體製品均勻蝕刻成極薄之膜厚後,分隔變薄之半導體製 品分割成複數晶片,將各該薄晶片,加熱及加壓依序固定 於基板。 因半導體製品,向該半導體製品之面內方向,急速旋 轉或往復運動,與蝕刻液接觸,故蝕刻極爲均勻,不發生 凹凸或變形,而可獲得極薄(0. 1〜llOem)之半 導體製品。 將此種極薄半導體製品分割形成小晶片之複數薄半導 體晶片,因依序自第1基板帶上分離,加熱壓接於第2基 板上,故不但可獲得極薄之半導體晶片,且不致開裂固定 於上述第2基板上。尤因使用軟質帶做爲上述第1基板, 僅所需晶片押於上方,僅選擇加熱該晶片*故極易將所需 (請先閣讀背面之注^項再填寫本页) 本紙張尺度適用中國國家榡準(CNS > A4规格(210X297公釐) 第85105952號專利申讅案 中文説明書修正頁410867 民固86年9月修正 Α7 Β7 經濟部中央標隼局員工消費合作社印製 五、發明説明(4 ) 晶片固定於上述第2基板*將上述製品分割成晶片,實用 上以切塊完成分離成各晶片之方法爲佳。 更以導電性接著劑固定上述第2基板與半導體晶片, 即無須以線連接,對工程簡化及成本之降低極爲有效。 〔實施例〕 實施例1 如第1圜所示,將薄半導體製品1 0 5配置於以框 1 0 1保持之帶子(日立化成株式會社製,Η A - 1506)107上。該半導體製品105,係以切塊溝 1 04完全切斷,分離成複數晶片1 〇5 >。 分離之各晶片105< ,以加熱頭106自帶子 1 0 7背面向上押,押緊於預先塗布接著劑1 〇 3之基板 102,加熱粘接於該基板102»因該接著劑103係 由有機物質與導電性粒子之複合材料而成之向異導電性接 著劑,故以加壓加熱經含於上述接著劑1 〇 3中之導電性 粒子互以電連接形成於基板1 〇 2之電極(未圖示)與薄 型晶片105具有之電極(Pad;未圖示)° 又,上述晶片105'爲〇 1〜ΙΙΟίίΐη程度之 極薄厚度,可彎曲*厚度小〇· 1 //τη時,將各種半導體 元件形成於該晶片1 05 —困難’而大於1 1 〇#m時’ 因有彎曲開裂之虞,故晶片105 <之厚度0· 1〜 1 1 0以m範圍_內爲宜。 又,因上述帶子1 0 7係軟質,故以加熱頭1 〇 6加 本紙張尺度適用中國國家標準^奶以4^。10^9^*)-?- " 1^—· *^ϋ I t n^i 1^1 i ^^^1 ^SJ (請先M讀背面之注意i項再填寫本頁) 42 086 7」· - 經濟部中央標車局員工消費合作社印製 五、發明説明(5 ) 熱並向上押帶子1 0 7時帶子1 0 7上之上述薄晶片 1 0 5 ^亦被押上,與置於上方之基板1 0 2均勻且穩定 粘接。 第3圖係表示第1圚之平面構造之圖,帶子1 0 7係 由環狀框1 0 1保持,製品1 0 5以切塊溝1 0 4互相分 離成複數晶片1 0 5 —。製品1 0 5之周圍3 0 4係位於 框1 0 1內側,平坦粘度於帶子1 0 7。框1 0 1係以不 銹鋼或塑膠材料形成。因製品1 0 5之厚度不但極薄至 0. 1至11 O^m,且以粘著劑牢固粘接於帶子107 ,故即使將製品1 0 5粘接於帶子1 0 7之狀態切塊,惟 薄晶片1 0 5 <不致自帶子1 0 7分散剝離。 第4圖表示將上述薄端I 0 5 >固定於基板1 0 2後 之狀態。第4圖(1 )係平面圖*第4圖(2 )係斷面IB 。將薄晶片1 0 5 >固定於基板1 0 2之所定位置。形成 於薄晶片1 0 5 —上之電極(Pad)與形成基板1 0 2 上之電極(基板電極)係互以面下連接予以連接。惟互以 線連接或導《性糊連接亦可。 因薄晶片之寅裝簡單且容易,故可促進半導體裝置之 薄型化,高機能化,及低廉化*而可將應用範用擴大至很 多新之領域。 又,第4圖(3)係擴大模式表示第4圇(1),( 2 )所示薄晶片1 〇 5 —與基板1 〇 2之連接部之斷面圖 ,第4圖(3 )所示,由導電性膜而成之Pa d (設於半 導體晶片之《極)4 0 5係設於薄晶片1 〇 5 **表面之鈍 (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標牟(CNS ) A4規格(2丨OX297公釐) 420867 經濟部中央標準局貝工消费合作社印製 A7 B7_五、發明説明(6 ) 化膜4 0 8去除之部分,以導竃性粒子4 0 6,連接於設 在基板1 0 2表面上之基板電極4 1 2,互相導通。在基 板1 0 2與晶片1 0 5 <間介設有機膜(有機接著劑層膜 )4 0 9,設有機膜4 0 9中含有導電粒子4 1 0,由該 導電性粒子4 1 0導通Pad 4 0 5與基板電極4 1 2間 。此時,如第4圖(3 )所示,鈍化膜4 0 9之膜厚大於 Pad 4 0 5之膜厚。因此,有效抑制介在Pad4 0 5 與基板電極4 1 2間之導電性粒子4 0 6向外部移動,結 果Pa d 4 0 5與基板霣極4 1 2間極確實以電連接。 一方面,先前之方法,係如第2圖所示,置於帶子 2 0 3上之晶片2 0 2,係由眞空夾具2 0 1操作移動至 其他基板(未圖示)上。即,置於帶子2 0 3上之晶片 2 0 2,係以製品切塊形成之個別之晶片,由上突梢 2 0 4上突之晶片2 0 2,係被眞空夾具2 0 1吸住逐一 依序移動。 帶子2 0 3塗有粘有劑,雖受紫外線(UV)照射或 加熱,接著性降低,惟因稍剩接著性,故由與眞空夾具 2 01連動動作之上突梢2 0 4 ,可自帶子2 0 3分離端 頭 2 0 2 0 惟由該上突梢2 0 4向上突出之先前之方法,在晶片 2 0 2之厚度極薄0. 1至110#111時,晶片2 0 2易 裂開,而降低生產性,故供廣泛實用困難。 實施例2 (請先鬩讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家標準(CNS ) A4规格(210X297公釐} 420867 ^ A7 B7 經濟部中央標準扃員工消費合作社印裝 五、發明説明( 7 ) 1 I 本實施例 乃 減 薄 半 導 體 製 品 之 方 法 之 例 子 0 1 1 如第5圖 ( 1 ) 所 示 以 粘 著 劑 將 S 製 品 10 5 固 1 定於貼在框1 0 1 之帶 子 1 0 7 上 後 $ 以 毎 1 0 0 0 轉 以 —S ! 讀 1 I 上高速度旋轉 S • 製 品 9 由 蝕 刻 液 噴嘴 5 0 1 將 蝕刻 液 先 閱 1 I 1 5 0 2滴於上 述 S » 製 品 1 0 5 上 9 蝕 刻 S 1 製 品1 0 5 背 1 1 表面 。上述蝕 刻 液 5 0 2 在本 實 施 例 使 用 氫 氧 化鉀 之 水 之 注 意 1 I 溶液 (濃度4 0 % ) > 惟使 用 氫 氧鉀 以 外 之 蝕 刻 液亦 可 0 事 項 再 1 1 因以高速旋 轉 上 述 S * 製 品 1 0 5 滴 下 蝕 刻液 填 寫 本 裝 5 0 2,故滴於 S 1 製 品 1 0 5 表 面 上 之 蝕 刻 液 5 0 2 係 頁 1 1 如第 5圖(2 ) 所 示 Ϊ 在 S i 製 品 1 0 5 表 面 上 以高 速 度 1 1 向橫 方向移動 0 因 此 得 以 均 勻 蝕 刻 S i 製 品 1 0 5 表 面 ! ! ,不 致產生段 差 或 損 壞 > 將 S • 製 品 1 0 5 製成 薄膜 0 訂 I 又,如第 5 圇 ( 3 ) 所示 雖 將 S i 製 品 以 每 分 1 1 I 1 » 0 0 0往 復 以 上 髙速 往 復 運 動 滴 下 上 述 蝕 刻 液5 0 2 1 ! j ,惟 同樣,蝕 刻 液 5 0 2 在 S i 製 品 1 0 5 表 面 上向 橫 方 1 1 向高速移動, 而 S i 製 品 1 0 5 表面 f 仍 不 致發 生段 差 或 知卜 1 損壤 均勻蝕刻 9 予 以 薄 膜 化 0 1 1 ! 實施 例3 1 I 第6圖係 表 示 本 發 明 之 其 他 實 施 例 之 工 程 ΓΒΟ 0 1 1 1 如第6圖 ( 1 ) 所示 9 S i 製 品 1 0 5 固 定 於貼在框 1 1 10 I之帶子 1 0 7 上 後 f 以 上 述 實 施 例 2 所示 方法 9 鈾 1 1 刻, 減薄S i 製 品 1 0 5 f 形 成 第 6 圈 ( 2 ) 示 之斷面 構 1 1 造, 更如第6 圊 ( 3 ) 所 示 f 在 S 製 品 1 0 5 形成 切 塊 1 1 本紙張尺度適用中國國家標準(CNS )戍4说格(210X29?公釐) -10 - 經濟部中央樣準局貝工消费合作社印袈 ..碘 A7 B7五、發明説明(8 ) 溝1 0 4 ,將S i製品1 〇 5分割成複數晶片1 0 5 —。 其次,如第6圖(4 )所示,將所定晶片1 0 5 >定 位於基板1 0 2後,自下方貼緊加熱頭1 〇 6 ’將該晶片 1 0 S加熱,加壓於基板1 〇 2,如第6圖(5 )所示將 晶片1 0 5 '移至基板1 〇 2,以接著劑1 0 3固定。各 晶片1 0 5 #之特性,係在分割前之製品狀態時,因預先 測定分明良品與不良品*故僅選良品晶片定位,移動固定 於基板1 0 2。 又,上述實施例2及3均使用與實施例1所用帶子相 同之帶子,惟當亦可使用其他各種帶子。 實施例4 本實施例係,將薄晶片主面相對於基板主面,以面下 連接至相接合兩者之例子。 首先,如第7圖(1 )所示,以粘著劑將S i製品 1 0 5固定於貼在第1框1 〇 1之第1帶子1 0 7上後, 如第7圇(2 )所示,與上述實施例2同樣,減薄S i製 品1 0 5之厚度。 其次,如第7圖(3 )所示,將S i製品1 〇 5表面 向下,相對於貼在第2框1 0 1 >之第2帶1 0 7 —表面 ,互相粘貼兩者° 自S i製品1 〇 5剝離上述第1帶1 〇 7,成爲S i 製品1 0 5形成於第2帶1 0 7 >表面上之構造後*如第 7圖(4)所示在Si製品105形成切塊溝104 ,分 t,^,π~, h (請先閱讀背面之注意事項再填寫本頁) 本紙浪尺度逋用中國圉家樣準(CNS ) A4規格(210X297公釐) 11 ,^85i05952號專利申請案 # 中文說明書修正頁民國月呈 Ί叫 i修正 補充 經濟部中央櫺準局貝工消资合作社印策 五、發明説明(9 ) 離成複數晶片1 0 5 < · 其次,如第7圖(5)所示,將上述晶片1〇5>定 位於基板1 0 2自下方貼緊加熱頭1 〇 6加熱加壓,如第 7圖(6 )所示,以向異導電性接著劑1 0 3將薄晶片 105'粘接於基板102· 依本實施例,將晶片105 >移至第2帶107"*後 移至基板1 0 2 ·因此,S i製品1 〇 5之正反兩面與上 述實施例1相反,當初之S i製品1〇5上面,以固定於 基板1 0 2之狀態亦成爲上面。故,本實施例在減薄S i 製品1 0 5後,將所需半導體元件形成於S i製品105 表面,則該半導體元件,配置於形成在基板10 2表面之 晶片1 0 5 >表面* 〔發明之效果〕 由上述說明可知,依本發明可得下述效果· (1 )因以接著劑將極薄之半導體晶片固定於基板* 並用含於上述接著劑中之導電性粒子互以電連接設於半導 體晶片表面之P、d與設於基板表面之基板電極’故因灣 曲破損之虞少,電連接之信賴性亦高· (2 )因以沿半導體製品主面移動之高速蝕刻液’減 薄膜品厚度,故易得膜厚均匀之薄半導體’而無發生變形 成欠陷之虞。 (3)因以同一工程實施例自上述帶子剝離與基板上 之粘接,故不致使半導體晶片開製,固定於基板上。 本紙乐尺度適用中國囷家揉車(〇邓)八4说格(2】0犬:!97公釐)_ _ -- - —i I In 1 I! n ! ] 1 n i! · - *1T (請先閱讀背面之注意事項再填寫本頁) ίί λ ,Λ* 播 α7 Β7 五 '發明説明(10 ) (4 )因選擇加熱,加壓所需半導體晶片移至上述基 板上,故得以極容易且低廉,將薄晶片實裝基板° (許先閲讀背面之注意事項再填寫本頁) (5 )由以向異導電接著劑固定於基板,故無需線連 接,將各半導體晶片連接於基板上。 (6)半導體晶片厚度因成可彎曲之〇 1至110 以m之極薄厚度,故可實現強耐彎曲力之薄半導體裝置。 圖示之簡單說明: 第1圖:本發明之第1實施例之說明圖。 第2圖:先前方法之說明圚。 第3圖:說明本發明之實施例之平面圖· 第4圖(1):表示晶片與基板連接之平面圖。 第4圖(2):表示晶片與基板連接之斷面圖。 第4圖(3):表示晶片與基板連接之斷面圖。 第5圖(1)〜第5圖(3):說明本發明之第2實 施例之工程圖。 經濟部中央棵準局貝工消费合作社印製 第6圖(1)〜第6圖(5):說明本發明之第3實 施例之工程圖。 第7圖(1)〜第7圓(6):說明本發明之第4實 施例之工程圖。 本紙張尺度逍用中國國家榇率(CNS M4規格(210X297公釐) -13 -
Claims (1)
- η Α8 Β8 C8 D8 經濟部中夾#荜局I工消費合作社印裝 六、申請#利範圍 * 第85105952號申請專利案 中文申請專利範圍修正本 民國87年4月 1. 一種半導體裝置之製造方法,其特徵係包含保持 於第1之基板上,將形成半導體元件之半導體晶圓之表面 接觸蝕刻液,沿著上述半導體晶圓之表面,將上述蝕刻液 經由高速度之移動,將上述半導體晶圓之厚度變小的工程 ,和將厚度變小之該半導體晶圓完全加以切割,分離成複 數之晶片的工程,和向對向配置於形成前述晶片之前述半 導體元件的面之第2基板,固著前述晶片之工程者。 2. 如申請專利範圍第1項之半導體裝置之製造方法’ 其中,將上述半導體晶圓之厚度變小的工程係將該半導體 晶圓之表面,接觸至上述蝕刻液,將上述半導體晶圓在於 該半導體晶圓之平面方向內,經由旋轉加以進行者* 3. 如申請專利範圍第2項之半導體裝置之製造方法’ 其中,上述半導體晶圓係以1 000次/分以上之速度加以旋 轉者。 4. 如申請專利範圍第1項之半導體裝置之製造方法’ 其中,將上述半導體晶圓之厚度變小的工程係將該半導體 晶圓之表面,接觸至上述蝕刻液,將上述半導體晶圓在於 該半導體晶圓之平面方向內,經由往復運動加以進行者。 5. 如申請專利範圍第1項之半導體裝置之製造方法* 其中,上述第1之基板係帶子者。 6. 如申請專利範圍第5項之半導體裝置之製造方法’ (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 本紙蒗尺度適用中國國家榡準(CNS )人4洗格(210X297公釐) Ί - A8 B8 C8 D8 0¾67 六、申請專利範圍 其中,上述帶子係由有機物質所成軟質帶者。 ^^1 -I ^^^1 ^^^1 ^^^1 I n . HI —^1 (讀先閱讀背面之注意事項再填寫本頁) 7. 如申請專利範圍第5項之半導體裝置之製造方法, 其中,上述帶子係支持於框體者。 8. 如申請專利範圍第7項之半導體裝置之製造方法, 其中,上述框體爲環狀者> 9. 如申請專利範圍第1項之半導體裝置之製造方法, 其中,令上述晶片自上述第1之基板分離,固著於上述第2 基板之工程係選擇性加熱所期望之上述晶片,經由對第2 基板之壓接加以進行者β 10. 如申請專利範圍第1項之半導體裝置之製造方法 ,其中,令上述晶片自上述第1之基板分離,固著於第2基 板之工程係經由設於上述帶子下之加熱頭,經由將上述晶 片推起且加熱地加以進行者。 11. 如申請專利範圍第1項之半導體裝置之製造方法 ,其中,上述晶片和上述第2之基板係經由形成於該第2之 基板表面上的黏著劑層加以固著者" Μ濟部中女標準局冥工消费合作社印製 12·如申請專利範圍第11項之半導體裝置之製造方法 ,其中,上述黏著劑係向異導電性黏著劑層者。 13. 如申請專利範圍第12項之半導體裝置之製造方法 ,其中,上述向異導電性黏著劑層係包含有機物質和導電 性粒子者。 14. 如申請專利範圍第1項之半導體裝置之製造方法 ,其中,形成於上述晶片之表面的電極’和形成於上述第 2基板的電極係經由面下接合,相互電氣性地連接者。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -2 - λ2〇86Ή 蟻 C8 D8 六、 申請專利範圍 - 1 I 15 .如 串 請 專 利 範 圍 第1項之半導體裝置之製造方法 1 1 1 其 中 ,於 令 上 述 半 導 體 晶圓之厚度變小之工程和切割厚 1 度 娛 小之該 半 導 體 晶 圓 » 分離成複數晶片之工程間,具有 | 將 厚 請 1 度變小 之 該 半 導 體 晶 圓以第3基板加以保持之工程者 先 聞 1 1 讀 1 0 背 面 1 I 16 如 串 請 專 利 範 圍 第15項之半導體裝置之製造方法 之 注 意 1 1 } 其 中 ,上 述 第 3基板係由軟質之帶子所成者。 事 項 1 | 再 1 17 如 串 請 專 利 範 圍 第1項之半導體裝置之製造方法 缜 寫 ▲ 裝 1 其 中 經 由 令 上 述 半 導 體晶圓之厚度變小之工程•上述 頁 1 I 半 導 體晶圓 之 厚 度 呈 0. I | 18 如 串 請 專 利 範 圍 第1項之半導體裝置之製造方法 1 t | ) 其 中 在 將 上 述 晶 片 固 著於上述第2基板之工程前•附 1 訂 加 在 於上述 晶 片 之 上 述 第 2基板側上形成具有所定形狀之 1 1 鈍 化 膜和較 上 述 鈍 化 膜 厚 度爲小之電極的工程者》 1 1 19 如 串 請 專 利 範 圍 第18項之半導體裝置之製造方法 1 1 其 中 上 述 電 極 係 形 成 於上述晶片之上述第2之基板側 • ¥ * ! 表 面 之上述 鈍 化 膜 未 形 成 之部分上者》 ! I 20 — 種 半 導 體 裝 置 之製造方法,其特徵係具有 1 I I 具有相 互 對 向 之 第 1主面和第2主面,於第1主面準備 1 1 形 成 複數半 導 體 元 件 之 第 1基板的工程* 1 1 和將形 成 上 述 複 數 之 半導體元件之第1主面*以第1帶 ί 1 子 加 以被覆 之 X 程 , 1 | 和旋轉 具 有 上 述 第 1帶子之上述第1基板,直至上述第 I 1 1基板厚 度呈0 .1 β m, -1 00 Am之範圍值*令全第2之主面側 1 1 1 本紙張尺度逋用中國國家標準(CNS ) A4規格(2丨0X29*7公釐〉 -3 - 4 經濟部中央喿涑局員工消費合作社印裂 ^ r- -7 i ^ A8 B8 C8 __ D8____六、申請專利範圍 使用藥液加以蝕刻之工程, 和將薄膜化之上述第1基板之上述第2主面側的表面, 以第2帶子加以被覆之工程, 和將上述第1帶子自上述第1主面除去之工程, 和切斷薄膜化之上述第1基板,分離複數之半導體晶 片之工程, 和準備形成配線之第2基板之工程, 和相互對向形成上述半導體晶片之半導體元件之面和 形成上述第2基板之配線的面的工程, 和加熱上述半導體晶片,壓接於上述第2之基板,將 形成於上述半導體晶片之上述半導體元件的外部端子和形 成於上述第2之基板的上述配線,以向異導電性黏著劑層 電氣性連接之工程者。 21.如申請專利範圍第20項之半導髖裝置之製造方法 ,其中,切斷薄膜化之上述第1基板,分離複數之半導體 晶片之工程係經由完全切斷上述第i之基板而進行者6 22 .如申請專利範圍第20項之半導體裝置之製造方法 ,其中,上述第2之帶子係以框體支持者。 2 3.—種半導體裝置之製造方法,其特徵係具有 將形成半導體元件之第1基板之表面,以第1膜加以被 覆的工程,和自以上述第1膜被覆之上述第1基板之背面側 ,薄膜化上述第1之基板之工程, 和將薄膜化之上述第1之基板之背面,以第2膜加以被 覆的工程,和將第2基板對向配置於形成上述第1基板1之 —-1 ^^1 m I * 去之 1 m I 1 - JJ (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用令國國家標準(CNS ) A4说格(2!OX297公釐) 一4 _ A8 Ββ C8 DB '申請專利範圍 上述半導體元件之面的工程, 和經由加熱頭,自上述第2膜側向上述第2基板側’壓 出上述半導體晶片,將上述半導體晶片自上述第1基板剝 離之工程者。 24 _如申請專利範團第23項之半導體裝置之製造方法 ,其中,切斷上述第1基板,分離複數之半導體晶片之工 程係經由完全切斷上述第1之基板而進行者。 25.如申請專利範圍第23項之半導體裝置之製造方法 ,其中,對上述半導體晶片之上述第2基板之固著係使用 向異導電性黏著劑加以進行者。 26· —種半導體裝置之製造方法,其特徵係具有 將形成半導體元件之第1基板之表面,以帶子被覆之 工程,和令以上述帶子被覆之上述第1基板之背面側’使 用藥液加以蝕刻,薄膜化上述第1基板之工程, 和切斷薄膜化之上述第1基板,分離複數之半導體晶 片之工程,和對向於切斷之上述第1基板,配置上述第2基 板之工程, 經濟部中央¾進局R工消费合作社印笨 —- —II 1 -I I 1 - I I . I I I- --- 1 I „ ---- (請先閱讀背面之注意事項再填寫本頁) 和經由加熱頭,自上述帶子側向上述第2基板側,壓 出上述半導體晶片,將上述半導體晶片固著於上述第2基 板之工程者。 27 .如申請專利範圍第26項之半導體裝置之製造方法 ,其中,對上述半導體晶片之上述第2基板之固著係使用 向異導電性黏著劑加以進行者。 28. 一種半導體裝置之製造方法,其特徵係具有 本紙張又度適用中國國家標準(CNS M4規格(210X297公釐) 一 5 Ά Ί AS B8 C8 D8 七、申請專利範圍 (請先閱讀背面之注項再填寫本頁) 將形成半導體元件之半導體晶圓之表面’以第1膜被 覆之工程’和令以上述第1膜所被覆之半導體晶圓之厚度 ,薄膜化至Ο.ίβιη〜之工程’ 和完全切斷薄膜化之上述半導體晶圓’分離複數之半 導體晶片之工程,和將上述半導體晶片’固著於第2基板 之工程者。 29. —種半導體裝置之製造方法’其特徵係具有 將形成半導體元件之第1基板之表面,以第1膜被覆之 工程,和令以上述第1膜所被覆之上述第1基板之厚度|薄 膜化至O.lAm〜1004Π1之工程’ 和完全切斷薄膜化之上述第1基板’分割成複數之半 導體晶片之工程, 和自上述第1膜側,使用表面平坦之平頭,壓出上述 半導體晶片,將上述半導體晶片自上述第1膜剝離之工程 者。 經漭部中央標维局員工消費合作社印家 30·—種半導體裝置之製造方法,其特徵係具有 具有相互對向之第1主面和第2主面,於第1主面準備 形成複數半導體元件之第1基板的工程, 和將形成上述複數之半導體元件之第1主面,以第1膜 加以被覆之工程, 和直至上述第1基板厚度呈O.lMm〜iQOgjn之範圍值 ,薄膜化第1之基板之工程, 和將薄膜化之上述第1基板之上述第2主面側的表面, 以第2膜加以被覆之工程, 本级Γ張尺度適用中國國家標準(CNS Τ Α4規格(210 X 297公釐) ---- -6 一 ΰ,2 OB67 A8 B8 C8 D8 、申請專利範圍 和將上述第1膜自上述第1主面除去之工程, 和切斷薄膜化之上述第1基板,分離複數之半導體晶 片之工程, 和自上述第2膜側,使用表面平坦之平頭,壓出上述 半導體晶片,將上述半導體晶片自上述第2膜剝離之工程 者。 (請先閱讀背面之注項再填寫本頁) t· Γ 經濟部中央樣笨局男二消費合作杜印製 本紙張·尺度通用中國國家標準(CNS ) A4規格(210X297公釐) -7 -
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-
1995
- 1995-05-18 JP JP12023695A patent/JP3197788B2/ja not_active Expired - Lifetime
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1996
- 1996-05-14 KR KR1019970708198A patent/KR100606254B1/ko not_active IP Right Cessation
- 1996-05-14 CN CN96194858A patent/CN1098534C/zh not_active Expired - Fee Related
- 1996-05-14 EP EP96913741A patent/EP0828292B1/en not_active Expired - Lifetime
- 1996-05-14 CA CA002221127A patent/CA2221127A1/en not_active Abandoned
- 1996-05-14 WO PCT/JP1996/001263 patent/WO1996036992A1/ja active IP Right Grant
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- 1996-05-14 CN CNB02123244XA patent/CN100466224C/zh not_active Expired - Fee Related
- 1996-05-14 DE DE69636338T patent/DE69636338T2/de not_active Expired - Lifetime
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- 1996-05-20 TW TW085105952A patent/TW420867B/zh not_active IP Right Cessation
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CA2221127A1 (en) | 1996-11-21 |
EP0828292B1 (en) | 2006-07-12 |
DE69636338D1 (de) | 2006-08-24 |
JPH08316194A (ja) | 1996-11-29 |
CN1188563A (zh) | 1998-07-22 |
KR19990014853A (ko) | 1999-02-25 |
CN1514479A (zh) | 2004-07-21 |
US6514796B2 (en) | 2003-02-04 |
EP0828292A1 (en) | 1998-03-11 |
EP0828292A4 (en) | 2000-01-05 |
CN100466224C (zh) | 2009-03-04 |
US6162701A (en) | 2000-12-19 |
US20010000079A1 (en) | 2001-03-29 |
AU718934B2 (en) | 2000-05-04 |
AU5659896A (en) | 1996-11-29 |
US5893746A (en) | 1999-04-13 |
US20030027376A1 (en) | 2003-02-06 |
CN1098534C (zh) | 2003-01-08 |
JP3197788B2 (ja) | 2001-08-13 |
US6589818B2 (en) | 2003-07-08 |
KR100606254B1 (ko) | 2006-12-07 |
WO1996036992A1 (en) | 1996-11-21 |
DE69636338T2 (de) | 2007-07-05 |
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