TW314656B - - Google Patents

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Publication number
TW314656B
TW314656B TW085113942A TW85113942A TW314656B TW 314656 B TW314656 B TW 314656B TW 085113942 A TW085113942 A TW 085113942A TW 85113942 A TW85113942 A TW 85113942A TW 314656 B TW314656 B TW 314656B
Authority
TW
Taiwan
Prior art keywords
terminal
protection member
item
semi
common wiring
Prior art date
Application number
TW085113942A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW314656B publication Critical patent/TW314656B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
TW085113942A 1995-11-15 1996-11-14 TW314656B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7296550A JP3019760B2 (ja) 1995-11-15 1995-11-15 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW314656B true TW314656B (enExample) 1997-09-01

Family

ID=17834993

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113942A TW314656B (enExample) 1995-11-15 1996-11-14

Country Status (5)

Country Link
US (1) US5828107A (enExample)
EP (1) EP0774784A3 (enExample)
JP (1) JP3019760B2 (enExample)
KR (1) KR100206675B1 (enExample)
TW (1) TW314656B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100223923B1 (ko) * 1996-11-19 1999-10-15 구본준 정전기 방지장치
JP2954153B1 (ja) 1998-04-07 1999-09-27 日本電気アイシーマイコンシステム株式会社 半導体集積回路
KR100506970B1 (ko) * 1998-09-01 2005-10-26 삼성전자주식회사 정전기방전 방지용 반도체장치
US6268286B1 (en) 2000-02-01 2001-07-31 International Business Machines Corporation Method of fabricating MOSFET with lateral resistor with ballasting
US6700164B1 (en) 2000-07-07 2004-03-02 International Business Machines Corporation Tungsten hot wire current limiter for ESD protection
CN1244152C (zh) 2001-11-16 2006-03-01 松下电器产业株式会社 半导体装置
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
JP2014225483A (ja) 2011-09-16 2014-12-04 パナソニック株式会社 半導体集積回路装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
JPH061833B2 (ja) * 1982-11-11 1994-01-05 株式会社東芝 Ｍｏｓ形半導体装置
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JP3318774B2 (ja) * 1992-06-29 2002-08-26 ソニー株式会社 半導体装置および固体撮像装置
JP2958202B2 (ja) * 1992-12-01 1999-10-06 シャープ株式会社 半導体装置
JP2972494B2 (ja) * 1993-06-30 1999-11-08 日本電気株式会社 半導体装置
US5616943A (en) * 1993-09-29 1997-04-01 At&T Global Information Solutions Company Electrostatic discharge protection system for mixed voltage application specific integrated circuit design
JP2638462B2 (ja) * 1993-12-29 1997-08-06 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
KR970030780A (ko) 1997-06-26
JPH09139468A (ja) 1997-05-27
KR100206675B1 (ko) 1999-07-01
EP0774784A3 (en) 2000-07-19
EP0774784A2 (en) 1997-05-21
US5828107A (en) 1998-10-27
JP3019760B2 (ja) 2000-03-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees