TW314626B - - Google Patents

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Publication number
TW314626B
TW314626B TW085114750A TW85114750A TW314626B TW 314626 B TW314626 B TW 314626B TW 085114750 A TW085114750 A TW 085114750A TW 85114750 A TW85114750 A TW 85114750A TW 314626 B TW314626 B TW 314626B
Authority
TW
Taiwan
Prior art keywords
data
quot
external
internal
parallel
Prior art date
Application number
TW085114750A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18014761&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW314626(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW314626B publication Critical patent/TW314626B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW085114750A 1995-11-29 1996-11-29 TW314626B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7311238A JP2817685B2 (ja) 1995-11-29 1995-11-29 半導体メモリ

Publications (1)

Publication Number Publication Date
TW314626B true TW314626B (enExample) 1997-09-01

Family

ID=18014761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114750A TW314626B (enExample) 1995-11-29 1996-11-29

Country Status (4)

Country Link
US (1) US5805504A (enExample)
JP (1) JP2817685B2 (enExample)
KR (1) KR100225189B1 (enExample)
TW (1) TW314626B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE39579E1 (en) * 1997-04-04 2007-04-17 Renesas Technology Corp. Semiconductor integrated circuit device comprising RAM with command decode system and logic circuit integrated into a single chip and testing method of the RAM with command decode system
JP3001475B2 (ja) * 1997-08-28 2000-01-24 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
US6078987A (en) * 1997-09-30 2000-06-20 Sun Microsystems, Inc. Translation look aside buffer having separate RAM arrays which are accessable with separate enable signals
JPH11203860A (ja) 1998-01-07 1999-07-30 Nec Corp 半導体記憶装置
DE19964449B4 (de) * 1998-06-30 2013-01-31 Fujitsu Semiconductor Ltd. Integrierte Halbleiterschaltung
JP4756724B2 (ja) 2000-02-24 2011-08-24 エルピーダメモリ株式会社 半導体記憶装置
KR100496857B1 (ko) * 2002-05-17 2005-06-22 삼성전자주식회사 외부적으로 데이터 로드 신호를 갖는 반도체 메모리 장치및 이 반도체 메모리 장치의 직렬 데이터의 병렬데이터로의 프리패치 방법
KR100582411B1 (ko) * 2003-10-31 2006-05-22 주식회사 하이닉스반도체 출력되는 데이터의 스큐 및 타이밍 에러를 방지할 수 있는반도체 메모리 장치
US7558933B2 (en) * 2003-12-24 2009-07-07 Ati Technologies Inc. Synchronous dynamic random access memory interface and method
KR101510452B1 (ko) * 2008-06-11 2015-04-10 삼성전자주식회사 그래픽 메모리의 데이터 라이트 제어 방법 및 그 장치
US10395753B2 (en) * 2014-08-28 2019-08-27 Winbond Electronics Corp. Semiconductor memory device and programming method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683555A (en) * 1985-01-22 1987-07-28 Texas Instruments Incorporated Serial accessed semiconductor memory with reconfigureable shift registers
JPS63250149A (ja) * 1987-04-07 1988-10-18 Mitsubishi Electric Corp 半導体装置
US5222047A (en) * 1987-05-15 1993-06-22 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for driving word line in block access memory
JPH04176089A (ja) * 1990-11-08 1992-06-23 Nec Corp メモリ装置
JPH04326138A (ja) * 1991-04-25 1992-11-16 Fujitsu Ltd 高速メモリｉｃ
US5384745A (en) * 1992-04-27 1995-01-24 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device
JPH0636560A (ja) * 1992-07-21 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置
US5617555A (en) * 1995-11-30 1997-04-01 Alliance Semiconductor Corporation Burst random access memory employing sequenced banks of local tri-state drivers

Also Published As

Publication number Publication date
JPH09153278A (ja) 1997-06-10
KR970029843A (ko) 1997-06-26
US5805504A (en) 1998-09-08
KR100225189B1 (ko) 1999-10-15
JP2817685B2 (ja) 1998-10-30

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