TW313639B - - Google Patents

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Publication number
TW313639B
TW313639B TW085104389A TW85104389A TW313639B TW 313639 B TW313639 B TW 313639B TW 085104389 A TW085104389 A TW 085104389A TW 85104389 A TW85104389 A TW 85104389A TW 313639 B TW313639 B TW 313639B
Authority
TW
Taiwan
Prior art keywords
circuit
frequency
control
oscillation
clock signal
Prior art date
Application number
TW085104389A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW313639B publication Critical patent/TW313639B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018585—Coupling arrangements; Interface arrangements using field effect transistors only programmable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Microcomputers (AREA)
TW085104389A 1995-03-29 1996-04-12 TW313639B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07113695A JP3557275B2 (ja) 1995-03-29 1995-03-29 半導体集積回路装置及びマイクロコンピュータ

Publications (1)

Publication Number Publication Date
TW313639B true TW313639B (https=) 1997-08-21

Family

ID=13451873

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085104389A TW313639B (https=) 1995-03-29 1996-04-12

Country Status (4)

Country Link
US (7) US6608509B1 (https=)
JP (1) JP3557275B2 (https=)
KR (1) KR100421313B1 (https=)
TW (1) TW313639B (https=)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489833B1 (en) 1995-03-29 2002-12-03 Hitachi, Ltd. Semiconductor integrated circuit device
WO1999012263A1 (fr) * 1996-03-27 1999-03-11 Hitachi, Ltd. Dispositif de circuit integre a semi-conducteurs
KR100568075B1 (ko) 1996-11-26 2006-10-24 가부시끼가이샤 히다치 세이사꾸쇼 반도체집적회로장치
WO1999010796A1 (fr) * 1997-08-27 1999-03-04 Hitachi, Ltd. Circuit integre a semi-conducteurs et systeme de traitement de donnees
JP3777768B2 (ja) 1997-12-26 2006-05-24 株式会社日立製作所 半導体集積回路装置およびセルライブラリを記憶した記憶媒体および半導体集積回路の設計方法
US6604202B1 (en) 1998-11-20 2003-08-05 Hitachi, Ltd. Low power processor
JP2000207884A (ja) 1999-01-11 2000-07-28 Hitachi Ltd 半導体集積回路装置
WO2000045437A1 (en) 1999-01-26 2000-08-03 Hitachi, Ltd. Method of setting back bias of mos circuit, and mos integrated circuit
JP3630291B2 (ja) * 1999-03-01 2005-03-16 シャープ株式会社 タイミング発生回路
JP3850580B2 (ja) 1999-03-30 2006-11-29 株式会社東芝 半導体装置
JP3928837B2 (ja) 1999-09-13 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路装置
US6629265B1 (en) * 2000-04-18 2003-09-30 Cypress Semiconductor Corp. Reset scheme for microcontrollers
US7149674B1 (en) * 2000-05-30 2006-12-12 Freescale Semiconductor, Inc. Methods for analyzing integrated circuits and apparatus therefor
JP2001345424A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置
JP3762856B2 (ja) * 2000-05-30 2006-04-05 株式会社ルネサステクノロジ 半導体集積回路装置
EP1211811A1 (fr) * 2000-11-28 2002-06-05 Koninklijke Philips Electronics N.V. Dispositif de comparaison de fréquences à faible inertie temporelle
US6967522B2 (en) * 2001-04-17 2005-11-22 Massachusetts Institute Of Technology Adaptive power supply and substrate control for ultra low power digital processors using triple well control
JP2003110028A (ja) 2001-10-01 2003-04-11 Hitachi Ltd データ処理装置
US6630700B2 (en) * 2001-10-05 2003-10-07 Motorola, Inc. NMOS circuit in isolated wells that are connected by a bias stack having pluralirty of diode elements
US6985025B1 (en) * 2002-01-19 2006-01-10 National Semiconductor Corporation System for adjusting a power supply level of a digital processing component and method of operating the same
US7493149B1 (en) * 2002-03-26 2009-02-17 National Semiconductor Corporation Method and system for minimizing power consumption in mobile devices using cooperative adaptive voltage and threshold scaling
US6731158B1 (en) * 2002-06-13 2004-05-04 University Of New Mexico Self regulating body bias generator
KR100500928B1 (ko) * 2002-06-29 2005-07-14 주식회사 하이닉스반도체 스위칭포인트 감지회로 및 그를 이용한 반도체 장치
US6762624B2 (en) * 2002-09-03 2004-07-13 Agilent Technologies, Inc. Current mode logic family with bias current compensation
US6784722B2 (en) * 2002-10-09 2004-08-31 Intel Corporation Wide-range local bias generator for body bias grid
US6930534B1 (en) * 2003-05-16 2005-08-16 Transmeta Corporation Temperature compensated integrated circuits
US6965264B1 (en) * 2003-06-30 2005-11-15 National Semiconductor Corporation Adaptive threshold scaling circuit
JP3948446B2 (ja) 2003-09-03 2007-07-25 セイコーエプソン株式会社 半導体装置
US7236044B2 (en) * 2003-10-14 2007-06-26 The Board Of Trustees Of The Leland Stanford Junior University Apparatus and method for adjusting the substrate impedance of a MOS transistor
JP2005166698A (ja) * 2003-11-28 2005-06-23 Matsushita Electric Ind Co Ltd 半導体集積回路
US7282975B2 (en) * 2003-12-31 2007-10-16 Intel Corporation Apparatus and method to control self-timed and synchronous systems
JP4744807B2 (ja) * 2004-01-06 2011-08-10 パナソニック株式会社 半導体集積回路装置
JP5159024B2 (ja) * 2004-01-30 2013-03-06 株式会社半導体エネルギー研究所 半導体装置
EP1709688A4 (en) 2004-01-30 2014-12-31 Semiconductor Energy Lab SEMICONDUCTOR DEVICE
US20050184794A1 (en) * 2004-02-10 2005-08-25 Summit Microelectronics, Inc. Active DC output control for active control of leakage in small geometry integrated circuits
US20050225376A1 (en) * 2004-04-08 2005-10-13 Ati Technologies, Inc. Adaptive supply voltage body bias apparatus and method thereof
US7519925B2 (en) * 2004-06-04 2009-04-14 Texas Instruments Incorporated Integrated circuit with dynamically controlled voltage supply
JP2006053652A (ja) * 2004-08-10 2006-02-23 Sony Computer Entertainment Inc 演算パイプライン、演算パイプラインによる処理方法、半導体装置、コンピュータプログラム
US7321254B2 (en) * 2004-12-03 2008-01-22 Lsi Logic Corporation On-chip automatic process variation, supply voltage variation, and temperature deviation (PVT) compensation method
US7453311B1 (en) * 2004-12-17 2008-11-18 Xilinx, Inc. Method and apparatus for compensating for process variations
JP2006211064A (ja) * 2005-01-26 2006-08-10 Nec Corp 論理回路の特性調整回路及びその方法並びにそれを用いた半導体集積回路
JP4607608B2 (ja) * 2005-02-04 2011-01-05 株式会社東芝 半導体集積回路
JP2006217540A (ja) * 2005-02-07 2006-08-17 Fujitsu Ltd 半導体集積回路および半導体集積回路の制御方法
JP4905354B2 (ja) 2005-09-20 2012-03-28 富士通株式会社 電源電圧調整装置
US7295036B1 (en) * 2005-11-30 2007-11-13 Altera Corporation Method and system for reducing static leakage current in programmable logic devices
US7479418B2 (en) 2006-01-11 2009-01-20 International Business Machines Corporation Methods of applying substrate bias to SOI CMOS circuits
KR100763850B1 (ko) * 2006-09-06 2007-10-05 삼성전자주식회사 통합 발진 회로를 구비하는 플래시 메모리 장치 및 상기메모리 장치의 동작 방법
US7791368B2 (en) * 2007-02-06 2010-09-07 Agere Systems Inc. Method and apparatus for regulating a power supply of an integrated circuit
US8081011B2 (en) * 2007-02-06 2011-12-20 Agere Systems Method and apparatus for regulating a power supply of an integrated circuit
US20080197914A1 (en) 2007-02-15 2008-08-21 Daniel Shimizu Dynamic leakage control using selective back-biasing
TWI328925B (en) * 2007-04-11 2010-08-11 Au Optronics Corp Negative voltage converter
JP2009069921A (ja) 2007-09-11 2009-04-02 Hitachi Ltd マルチプロセッサシステム
US7965133B2 (en) * 2007-10-31 2011-06-21 Agere Systems Inc. Compensation techniques for reducing power consumption in digital circuitry
JP2008199673A (ja) * 2008-05-07 2008-08-28 Renesas Technology Corp 半導体集積回路装置
US20100045364A1 (en) * 2008-08-25 2010-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive voltage bias methodology
US7920019B2 (en) * 2008-09-25 2011-04-05 Via Technologies, Inc. Microprocessor with substrate bias clamps
US7978001B2 (en) * 2008-09-25 2011-07-12 Via Technologies, Inc. Microprocessor with selective substrate biasing for clock-gated functional blocks
US7812662B2 (en) * 2008-10-07 2010-10-12 Via Technologies, Inc. System and method for adjusting supply voltage levels to reduce sub-threshold leakage
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same
US8154335B2 (en) 2009-09-18 2012-04-10 Stmicroelectronics Pvt. Ltd. Fail safe adaptive voltage/frequency system
US8154353B2 (en) * 2009-11-03 2012-04-10 Arm Limited Operating parameter monitor for an integrated circuit
JP2011171999A (ja) 2010-02-18 2011-09-01 Renesas Electronics Corp 半導体装置
JP5285643B2 (ja) * 2010-03-15 2013-09-11 シャープ株式会社 半導体集積回路および電子情報機器
US8248113B2 (en) * 2010-08-23 2012-08-21 Realtek Semiconductor Corp. Method and apparatus for accurate clock synthesis
RU2469473C1 (ru) * 2011-04-08 2012-12-10 Открытое акционерное общество "Информационные спутниковые системы" имени академика М.Ф. Решетнева" Силовой ключ на мдп-транзисторе
RU2469474C1 (ru) * 2011-06-16 2012-12-10 Открытое акционерное общество "Информационные спутниковые системы" имени академика М.Ф. Решетнева" Силовой ключ на мдп-транзисторе
US9444440B2 (en) * 2011-06-30 2016-09-13 Stmicroelectronics International N.V. Transition detector
US8723592B2 (en) * 2011-08-12 2014-05-13 Nxp B.V. Adjustable body bias circuit
DE102013207324A1 (de) * 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
US9374072B2 (en) * 2012-12-06 2016-06-21 Arm Limited Post fabrication tuning of an integrated circuit
US8717084B1 (en) * 2012-12-06 2014-05-06 Arm Limited Post fabrication tuning of an integrated circuit
JP6328909B2 (ja) * 2013-06-21 2018-05-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置
FR3009149A1 (fr) * 2013-07-24 2015-01-30 St Microelectronics Sa Element a retard variable
CN105493405B (zh) 2013-08-19 2018-09-25 国立研究开发法人科学技术振兴机构 可重构的延迟电路及使用该延迟电路的延迟监测电路、偏差校正电路、偏差测定方法和偏差校正方法
JP6406926B2 (ja) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 半導体装置
US9294106B2 (en) * 2014-07-03 2016-03-22 Stmicroelectronics International N.V. Capacitance multiplier and loop filter noise reduction in a PLL
US9509318B2 (en) * 2015-03-13 2016-11-29 Qualcomm Incorporated Apparatuses, methods, and systems for glitch-free clock switching
JP2018010707A (ja) 2016-07-12 2018-01-18 ルネサスエレクトロニクス株式会社 半導体装置
JP6753740B2 (ja) * 2016-09-05 2020-09-09 ローム株式会社 半導体集積回路
JP6884084B2 (ja) 2017-10-13 2021-06-09 ルネサスエレクトロニクス株式会社 電力制御システム及び電力制御方法
EP3713089A1 (en) * 2019-03-22 2020-09-23 Nexperia B.V. Power supply detection circuit

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0390226A1 (en) * 1984-07-31 1990-10-03 Yamaha Corporation Jitter absorption circuit
JPS62272619A (ja) * 1986-05-21 1987-11-26 Hitachi Ltd 遅延回路
JPS6369315A (ja) * 1986-09-11 1988-03-29 Sony Corp Ｃｍｏｓ回路を用いた可変遅延装置
US4922141A (en) * 1986-10-07 1990-05-01 Western Digital Corporation Phase-locked loop delay line
US5184027A (en) * 1987-03-20 1993-02-02 Hitachi, Ltd. Clock signal supply system
JPH01293559A (ja) 1988-05-20 1989-11-27 Ricoh Co Ltd Ｍｏｓトランジスタ装置
US4899071A (en) * 1988-08-02 1990-02-06 Standard Microsystems Corporation Active delay line circuit
US5192886A (en) * 1990-03-15 1993-03-09 Hewlett-Packard Company Sub-nanosecond calibrated delay line structure
DE69130043T2 (de) * 1990-09-18 1999-04-15 Fujitsu Ltd., Kawasaki, Kanagawa Elektronische Anordnung mit einem Bezugsverzögerungsgenerator
JPH04247653A (ja) 1991-02-04 1992-09-03 Ricoh Co Ltd 半導体集積回路装置の遅延補正装置
JP3092630B2 (ja) 1991-03-25 2000-09-25 株式会社日立製作所 制御回路及びその制御回路により制御される集積回路
US5231319A (en) * 1991-08-22 1993-07-27 Ncr Corporation Voltage variable delay circuit
JP3184265B2 (ja) 1991-10-17 2001-07-09 株式会社日立製作所 半導体集積回路装置およびその制御方法
US5146121A (en) * 1991-10-24 1992-09-08 Northern Telecom Limited Signal delay apparatus employing a phase locked loop
US5252867A (en) * 1992-02-14 1993-10-12 Vlsi Technology, Inc. Self-compensating digital delay semiconductor device with selectable output delays and method therefor
JPH05235714A (ja) * 1992-02-25 1993-09-10 Sumitomo Electric Ind Ltd 可変遅延回路
EP0836194B1 (en) 1992-03-30 2000-05-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2939086B2 (ja) 1992-03-30 1999-08-25 三菱電機株式会社 半導体装置
US5461338A (en) * 1992-04-17 1995-10-24 Nec Corporation Semiconductor integrated circuit incorporated with substrate bias control circuit
JP2792801B2 (ja) * 1992-12-28 1998-09-03 三菱電機株式会社 半導体集積回路並びにその設計方法及び製造方法
FR2711287B1 (fr) * 1993-10-11 1996-01-05 Sgs Thomson Microelectronics Circuit d'indication de relation de phase entre plusieurs signaux de même fréquence et son application à un circuit d'ajustage des déphasages entre ces signaux.
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
US5475344A (en) * 1994-02-22 1995-12-12 The Board Of Trustees Of The Leland Stanford Junior University Multiple interconnected ring oscillator circuit
US6081146A (en) * 1996-09-25 2000-06-27 Kabushiki Kaisha Toshiba Interface circuit and interface circuit delay time controlling method

Also Published As

Publication number Publication date
US20030006816A1 (en) 2003-01-09
US20030197547A1 (en) 2003-10-23
US6472916B2 (en) 2002-10-29
KR960036141A (ko) 1996-10-28
JPH08274620A (ja) 1996-10-18
US6388483B1 (en) 2002-05-14
US6166577A (en) 2000-12-26
US20050083096A1 (en) 2005-04-21
JP3557275B2 (ja) 2004-08-25
US7161408B2 (en) 2007-01-09
US6608509B1 (en) 2003-08-19
US20020030521A1 (en) 2002-03-14
US6597220B2 (en) 2003-07-22
US6819158B2 (en) 2004-11-16
KR100421313B1 (ko) 2004-08-25

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