JP3557275B2 - 半導体集積回路装置及びマイクロコンピュータ - Google Patents
半導体集積回路装置及びマイクロコンピュータ Download PDFInfo
- Publication number
- JP3557275B2 JP3557275B2 JP07113695A JP7113695A JP3557275B2 JP 3557275 B2 JP3557275 B2 JP 3557275B2 JP 07113695 A JP07113695 A JP 07113695A JP 7113695 A JP7113695 A JP 7113695A JP 3557275 B2 JP3557275 B2 JP 3557275B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- oscillation
- frequency
- mis transistor
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018585—Coupling arrangements; Interface arrangements using field effect transistors only programmable
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
- H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
- Power Sources (AREA)
- Microcomputers (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07113695A JP3557275B2 (ja) | 1995-03-29 | 1995-03-29 | 半導体集積回路装置及びマイクロコンピュータ |
| KR1019960008655A KR100421313B1 (ko) | 1995-03-29 | 1996-03-27 | 반도체집적회로장치및마이크로컴퓨터 |
| US08/622,389 US6608509B1 (en) | 1995-03-29 | 1996-03-27 | Semiconductor integrated circuit device and microcomputer |
| TW085104389A TW313639B (https=) | 1995-03-29 | 1996-04-12 | |
| US09/486,057 US6489833B1 (en) | 1995-03-29 | 1998-07-01 | Semiconductor integrated circuit device |
| US09/415,220 US6166577A (en) | 1995-03-29 | 1999-10-12 | Semiconductor integrated circuit device and microcomputer |
| US09/688,234 US6388483B1 (en) | 1995-03-29 | 2000-10-16 | Semiconductor integrated circuit device and microcomputer |
| US09/994,645 US6472916B2 (en) | 1995-03-29 | 2001-11-28 | Semiconductor integrated circuit device and microcomputer |
| US10/241,505 US6597220B2 (en) | 1995-03-29 | 2002-09-12 | Semiconductor integrated circuit device and microcomputer |
| US10/282,080 US20030048125A1 (en) | 1995-03-29 | 2002-10-29 | Semiconductor integrated circuit device |
| US10/446,797 US6819158B2 (en) | 1995-03-29 | 2003-05-29 | Semiconductor integrated circuit device and microcomputer |
| US10/663,736 US6774706B2 (en) | 1995-03-29 | 2003-09-17 | Semiconductor integrated circuit device |
| US10/911,664 US7138852B2 (en) | 1995-03-29 | 2004-08-05 | Semiconductor integrated circuit device |
| US10/982,945 US7161408B2 (en) | 1995-03-29 | 2004-11-08 | Semiconductor integrated circuit device and microcomputer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07113695A JP3557275B2 (ja) | 1995-03-29 | 1995-03-29 | 半導体集積回路装置及びマイクロコンピュータ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004116554A Division JP3917985B2 (ja) | 2004-04-12 | 2004-04-12 | 半導体集積回路装置及びマイクロコンピュータ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08274620A JPH08274620A (ja) | 1996-10-18 |
| JP3557275B2 true JP3557275B2 (ja) | 2004-08-25 |
Family
ID=13451873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07113695A Expired - Fee Related JP3557275B2 (ja) | 1995-03-29 | 1995-03-29 | 半導体集積回路装置及びマイクロコンピュータ |
Country Status (4)
| Country | Link |
|---|---|
| US (7) | US6608509B1 (https=) |
| JP (1) | JP3557275B2 (https=) |
| KR (1) | KR100421313B1 (https=) |
| TW (1) | TW313639B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3270380A1 (en) | 2016-07-12 | 2018-01-17 | Renesas Electronics Corporation | Finfet memory device |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6489833B1 (en) | 1995-03-29 | 2002-12-03 | Hitachi, Ltd. | Semiconductor integrated circuit device |
| WO1999012263A1 (fr) * | 1996-03-27 | 1999-03-11 | Hitachi, Ltd. | Dispositif de circuit integre a semi-conducteurs |
| KR100568075B1 (ko) | 1996-11-26 | 2006-10-24 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체집적회로장치 |
| WO1999010796A1 (fr) * | 1997-08-27 | 1999-03-04 | Hitachi, Ltd. | Circuit integre a semi-conducteurs et systeme de traitement de donnees |
| JP3777768B2 (ja) | 1997-12-26 | 2006-05-24 | 株式会社日立製作所 | 半導体集積回路装置およびセルライブラリを記憶した記憶媒体および半導体集積回路の設計方法 |
| US6604202B1 (en) | 1998-11-20 | 2003-08-05 | Hitachi, Ltd. | Low power processor |
| JP2000207884A (ja) | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体集積回路装置 |
| WO2000045437A1 (en) | 1999-01-26 | 2000-08-03 | Hitachi, Ltd. | Method of setting back bias of mos circuit, and mos integrated circuit |
| JP3630291B2 (ja) * | 1999-03-01 | 2005-03-16 | シャープ株式会社 | タイミング発生回路 |
| JP3850580B2 (ja) | 1999-03-30 | 2006-11-29 | 株式会社東芝 | 半導体装置 |
| JP3928837B2 (ja) | 1999-09-13 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| US6629265B1 (en) * | 2000-04-18 | 2003-09-30 | Cypress Semiconductor Corp. | Reset scheme for microcontrollers |
| US7149674B1 (en) * | 2000-05-30 | 2006-12-12 | Freescale Semiconductor, Inc. | Methods for analyzing integrated circuits and apparatus therefor |
| JP2001345424A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 半導体集積回路装置 |
| JP3762856B2 (ja) * | 2000-05-30 | 2006-04-05 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| EP1211811A1 (fr) * | 2000-11-28 | 2002-06-05 | Koninklijke Philips Electronics N.V. | Dispositif de comparaison de fréquences à faible inertie temporelle |
| US6967522B2 (en) * | 2001-04-17 | 2005-11-22 | Massachusetts Institute Of Technology | Adaptive power supply and substrate control for ultra low power digital processors using triple well control |
| JP2003110028A (ja) | 2001-10-01 | 2003-04-11 | Hitachi Ltd | データ処理装置 |
| US6630700B2 (en) * | 2001-10-05 | 2003-10-07 | Motorola, Inc. | NMOS circuit in isolated wells that are connected by a bias stack having pluralirty of diode elements |
| US6985025B1 (en) * | 2002-01-19 | 2006-01-10 | National Semiconductor Corporation | System for adjusting a power supply level of a digital processing component and method of operating the same |
| US7493149B1 (en) * | 2002-03-26 | 2009-02-17 | National Semiconductor Corporation | Method and system for minimizing power consumption in mobile devices using cooperative adaptive voltage and threshold scaling |
| US6731158B1 (en) * | 2002-06-13 | 2004-05-04 | University Of New Mexico | Self regulating body bias generator |
| KR100500928B1 (ko) * | 2002-06-29 | 2005-07-14 | 주식회사 하이닉스반도체 | 스위칭포인트 감지회로 및 그를 이용한 반도체 장치 |
| US6762624B2 (en) * | 2002-09-03 | 2004-07-13 | Agilent Technologies, Inc. | Current mode logic family with bias current compensation |
| US6784722B2 (en) * | 2002-10-09 | 2004-08-31 | Intel Corporation | Wide-range local bias generator for body bias grid |
| US6930534B1 (en) * | 2003-05-16 | 2005-08-16 | Transmeta Corporation | Temperature compensated integrated circuits |
| US6965264B1 (en) * | 2003-06-30 | 2005-11-15 | National Semiconductor Corporation | Adaptive threshold scaling circuit |
| JP3948446B2 (ja) | 2003-09-03 | 2007-07-25 | セイコーエプソン株式会社 | 半導体装置 |
| US7236044B2 (en) * | 2003-10-14 | 2007-06-26 | The Board Of Trustees Of The Leland Stanford Junior University | Apparatus and method for adjusting the substrate impedance of a MOS transistor |
| JP2005166698A (ja) * | 2003-11-28 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
| US7282975B2 (en) * | 2003-12-31 | 2007-10-16 | Intel Corporation | Apparatus and method to control self-timed and synchronous systems |
| JP4744807B2 (ja) * | 2004-01-06 | 2011-08-10 | パナソニック株式会社 | 半導体集積回路装置 |
| JP5159024B2 (ja) * | 2004-01-30 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP1709688A4 (en) | 2004-01-30 | 2014-12-31 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE |
| US20050184794A1 (en) * | 2004-02-10 | 2005-08-25 | Summit Microelectronics, Inc. | Active DC output control for active control of leakage in small geometry integrated circuits |
| US20050225376A1 (en) * | 2004-04-08 | 2005-10-13 | Ati Technologies, Inc. | Adaptive supply voltage body bias apparatus and method thereof |
| US7519925B2 (en) * | 2004-06-04 | 2009-04-14 | Texas Instruments Incorporated | Integrated circuit with dynamically controlled voltage supply |
| JP2006053652A (ja) * | 2004-08-10 | 2006-02-23 | Sony Computer Entertainment Inc | 演算パイプライン、演算パイプラインによる処理方法、半導体装置、コンピュータプログラム |
| US7321254B2 (en) * | 2004-12-03 | 2008-01-22 | Lsi Logic Corporation | On-chip automatic process variation, supply voltage variation, and temperature deviation (PVT) compensation method |
| US7453311B1 (en) * | 2004-12-17 | 2008-11-18 | Xilinx, Inc. | Method and apparatus for compensating for process variations |
| JP2006211064A (ja) * | 2005-01-26 | 2006-08-10 | Nec Corp | 論理回路の特性調整回路及びその方法並びにそれを用いた半導体集積回路 |
| JP4607608B2 (ja) * | 2005-02-04 | 2011-01-05 | 株式会社東芝 | 半導体集積回路 |
| JP2006217540A (ja) * | 2005-02-07 | 2006-08-17 | Fujitsu Ltd | 半導体集積回路および半導体集積回路の制御方法 |
| JP4905354B2 (ja) | 2005-09-20 | 2012-03-28 | 富士通株式会社 | 電源電圧調整装置 |
| US7295036B1 (en) * | 2005-11-30 | 2007-11-13 | Altera Corporation | Method and system for reducing static leakage current in programmable logic devices |
| US7479418B2 (en) | 2006-01-11 | 2009-01-20 | International Business Machines Corporation | Methods of applying substrate bias to SOI CMOS circuits |
| KR100763850B1 (ko) * | 2006-09-06 | 2007-10-05 | 삼성전자주식회사 | 통합 발진 회로를 구비하는 플래시 메모리 장치 및 상기메모리 장치의 동작 방법 |
| US7791368B2 (en) * | 2007-02-06 | 2010-09-07 | Agere Systems Inc. | Method and apparatus for regulating a power supply of an integrated circuit |
| US8081011B2 (en) * | 2007-02-06 | 2011-12-20 | Agere Systems | Method and apparatus for regulating a power supply of an integrated circuit |
| US20080197914A1 (en) | 2007-02-15 | 2008-08-21 | Daniel Shimizu | Dynamic leakage control using selective back-biasing |
| TWI328925B (en) * | 2007-04-11 | 2010-08-11 | Au Optronics Corp | Negative voltage converter |
| JP2009069921A (ja) | 2007-09-11 | 2009-04-02 | Hitachi Ltd | マルチプロセッサシステム |
| US7965133B2 (en) * | 2007-10-31 | 2011-06-21 | Agere Systems Inc. | Compensation techniques for reducing power consumption in digital circuitry |
| JP2008199673A (ja) * | 2008-05-07 | 2008-08-28 | Renesas Technology Corp | 半導体集積回路装置 |
| US20100045364A1 (en) * | 2008-08-25 | 2010-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adaptive voltage bias methodology |
| US7920019B2 (en) * | 2008-09-25 | 2011-04-05 | Via Technologies, Inc. | Microprocessor with substrate bias clamps |
| US7978001B2 (en) * | 2008-09-25 | 2011-07-12 | Via Technologies, Inc. | Microprocessor with selective substrate biasing for clock-gated functional blocks |
| US7812662B2 (en) * | 2008-10-07 | 2010-10-12 | Via Technologies, Inc. | System and method for adjusting supply voltage levels to reduce sub-threshold leakage |
| US8481372B2 (en) * | 2008-12-11 | 2013-07-09 | Micron Technology, Inc. | JFET device structures and methods for fabricating the same |
| US8154335B2 (en) | 2009-09-18 | 2012-04-10 | Stmicroelectronics Pvt. Ltd. | Fail safe adaptive voltage/frequency system |
| US8154353B2 (en) * | 2009-11-03 | 2012-04-10 | Arm Limited | Operating parameter monitor for an integrated circuit |
| JP2011171999A (ja) | 2010-02-18 | 2011-09-01 | Renesas Electronics Corp | 半導体装置 |
| JP5285643B2 (ja) * | 2010-03-15 | 2013-09-11 | シャープ株式会社 | 半導体集積回路および電子情報機器 |
| US8248113B2 (en) * | 2010-08-23 | 2012-08-21 | Realtek Semiconductor Corp. | Method and apparatus for accurate clock synthesis |
| RU2469473C1 (ru) * | 2011-04-08 | 2012-12-10 | Открытое акционерное общество "Информационные спутниковые системы" имени академика М.Ф. Решетнева" | Силовой ключ на мдп-транзисторе |
| RU2469474C1 (ru) * | 2011-06-16 | 2012-12-10 | Открытое акционерное общество "Информационные спутниковые системы" имени академика М.Ф. Решетнева" | Силовой ключ на мдп-транзисторе |
| US9444440B2 (en) * | 2011-06-30 | 2016-09-13 | Stmicroelectronics International N.V. | Transition detector |
| US8723592B2 (en) * | 2011-08-12 | 2014-05-13 | Nxp B.V. | Adjustable body bias circuit |
| DE102013207324A1 (de) * | 2012-05-11 | 2013-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
| US9374072B2 (en) * | 2012-12-06 | 2016-06-21 | Arm Limited | Post fabrication tuning of an integrated circuit |
| US8717084B1 (en) * | 2012-12-06 | 2014-05-06 | Arm Limited | Post fabrication tuning of an integrated circuit |
| JP6328909B2 (ja) * | 2013-06-21 | 2018-05-23 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| FR3009149A1 (fr) * | 2013-07-24 | 2015-01-30 | St Microelectronics Sa | Element a retard variable |
| CN105493405B (zh) | 2013-08-19 | 2018-09-25 | 国立研究开发法人科学技术振兴机构 | 可重构的延迟电路及使用该延迟电路的延迟监测电路、偏差校正电路、偏差测定方法和偏差校正方法 |
| JP6406926B2 (ja) | 2013-09-04 | 2018-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9294106B2 (en) * | 2014-07-03 | 2016-03-22 | Stmicroelectronics International N.V. | Capacitance multiplier and loop filter noise reduction in a PLL |
| US9509318B2 (en) * | 2015-03-13 | 2016-11-29 | Qualcomm Incorporated | Apparatuses, methods, and systems for glitch-free clock switching |
| JP6753740B2 (ja) * | 2016-09-05 | 2020-09-09 | ローム株式会社 | 半導体集積回路 |
| JP6884084B2 (ja) | 2017-10-13 | 2021-06-09 | ルネサスエレクトロニクス株式会社 | 電力制御システム及び電力制御方法 |
| EP3713089A1 (en) * | 2019-03-22 | 2020-09-23 | Nexperia B.V. | Power supply detection circuit |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0390226A1 (en) * | 1984-07-31 | 1990-10-03 | Yamaha Corporation | Jitter absorption circuit |
| JPS62272619A (ja) * | 1986-05-21 | 1987-11-26 | Hitachi Ltd | 遅延回路 |
| JPS6369315A (ja) * | 1986-09-11 | 1988-03-29 | Sony Corp | Cmos回路を用いた可変遅延装置 |
| US4922141A (en) * | 1986-10-07 | 1990-05-01 | Western Digital Corporation | Phase-locked loop delay line |
| US5184027A (en) * | 1987-03-20 | 1993-02-02 | Hitachi, Ltd. | Clock signal supply system |
| JPH01293559A (ja) | 1988-05-20 | 1989-11-27 | Ricoh Co Ltd | Mosトランジスタ装置 |
| US4899071A (en) * | 1988-08-02 | 1990-02-06 | Standard Microsystems Corporation | Active delay line circuit |
| US5192886A (en) * | 1990-03-15 | 1993-03-09 | Hewlett-Packard Company | Sub-nanosecond calibrated delay line structure |
| DE69130043T2 (de) * | 1990-09-18 | 1999-04-15 | Fujitsu Ltd., Kawasaki, Kanagawa | Elektronische Anordnung mit einem Bezugsverzögerungsgenerator |
| JPH04247653A (ja) | 1991-02-04 | 1992-09-03 | Ricoh Co Ltd | 半導体集積回路装置の遅延補正装置 |
| JP3092630B2 (ja) | 1991-03-25 | 2000-09-25 | 株式会社日立製作所 | 制御回路及びその制御回路により制御される集積回路 |
| US5231319A (en) * | 1991-08-22 | 1993-07-27 | Ncr Corporation | Voltage variable delay circuit |
| JP3184265B2 (ja) | 1991-10-17 | 2001-07-09 | 株式会社日立製作所 | 半導体集積回路装置およびその制御方法 |
| US5146121A (en) * | 1991-10-24 | 1992-09-08 | Northern Telecom Limited | Signal delay apparatus employing a phase locked loop |
| US5252867A (en) * | 1992-02-14 | 1993-10-12 | Vlsi Technology, Inc. | Self-compensating digital delay semiconductor device with selectable output delays and method therefor |
| JPH05235714A (ja) * | 1992-02-25 | 1993-09-10 | Sumitomo Electric Ind Ltd | 可変遅延回路 |
| EP0836194B1 (en) | 1992-03-30 | 2000-05-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| JP2939086B2 (ja) | 1992-03-30 | 1999-08-25 | 三菱電機株式会社 | 半導体装置 |
| US5461338A (en) * | 1992-04-17 | 1995-10-24 | Nec Corporation | Semiconductor integrated circuit incorporated with substrate bias control circuit |
| JP2792801B2 (ja) * | 1992-12-28 | 1998-09-03 | 三菱電機株式会社 | 半導体集積回路並びにその設計方法及び製造方法 |
| FR2711287B1 (fr) * | 1993-10-11 | 1996-01-05 | Sgs Thomson Microelectronics | Circuit d'indication de relation de phase entre plusieurs signaux de même fréquence et son application à un circuit d'ajustage des déphasages entre ces signaux. |
| KR0169157B1 (ko) * | 1993-11-29 | 1999-02-01 | 기다오까 다까시 | 반도체 회로 및 mos-dram |
| US5475344A (en) * | 1994-02-22 | 1995-12-12 | The Board Of Trustees Of The Leland Stanford Junior University | Multiple interconnected ring oscillator circuit |
| US6081146A (en) * | 1996-09-25 | 2000-06-27 | Kabushiki Kaisha Toshiba | Interface circuit and interface circuit delay time controlling method |
-
1995
- 1995-03-29 JP JP07113695A patent/JP3557275B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-27 KR KR1019960008655A patent/KR100421313B1/ko not_active Expired - Fee Related
- 1996-03-27 US US08/622,389 patent/US6608509B1/en not_active Expired - Fee Related
- 1996-04-12 TW TW085104389A patent/TW313639B/zh not_active IP Right Cessation
-
1999
- 1999-10-12 US US09/415,220 patent/US6166577A/en not_active Expired - Lifetime
-
2000
- 2000-10-16 US US09/688,234 patent/US6388483B1/en not_active Expired - Fee Related
-
2001
- 2001-11-28 US US09/994,645 patent/US6472916B2/en not_active Expired - Fee Related
-
2002
- 2002-09-12 US US10/241,505 patent/US6597220B2/en not_active Expired - Fee Related
-
2003
- 2003-05-29 US US10/446,797 patent/US6819158B2/en not_active Expired - Fee Related
-
2004
- 2004-11-08 US US10/982,945 patent/US7161408B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3270380A1 (en) | 2016-07-12 | 2018-01-17 | Renesas Electronics Corporation | Finfet memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030006816A1 (en) | 2003-01-09 |
| US20030197547A1 (en) | 2003-10-23 |
| US6472916B2 (en) | 2002-10-29 |
| KR960036141A (ko) | 1996-10-28 |
| JPH08274620A (ja) | 1996-10-18 |
| US6388483B1 (en) | 2002-05-14 |
| US6166577A (en) | 2000-12-26 |
| US20050083096A1 (en) | 2005-04-21 |
| US7161408B2 (en) | 2007-01-09 |
| US6608509B1 (en) | 2003-08-19 |
| US20020030521A1 (en) | 2002-03-14 |
| US6597220B2 (en) | 2003-07-22 |
| TW313639B (https=) | 1997-08-21 |
| US6819158B2 (en) | 2004-11-16 |
| KR100421313B1 (ko) | 2004-08-25 |
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