TW217455B - - Google Patents

Info

Publication number
TW217455B
TW217455B TW080105352A TW80105352A TW217455B TW 217455 B TW217455 B TW 217455B TW 080105352 A TW080105352 A TW 080105352A TW 80105352 A TW80105352 A TW 80105352A TW 217455 B TW217455 B TW 217455B
Authority
TW
Taiwan
Application number
TW080105352A
Other languages
Chinese (zh)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW217455B publication Critical patent/TW217455B/zh

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW080105352A 1991-05-24 1991-07-10 TW217455B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008454A KR940002272B1 (ko) 1991-05-24 1991-05-24 리던던시 기능을 가지는 반도체 메모리 장치

Publications (1)

Publication Number Publication Date
TW217455B true TW217455B (de) 1993-12-11

Family

ID=19314872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080105352A TW217455B (de) 1991-05-24 1991-07-10

Country Status (7)

Country Link
JP (1) JPH04346000A (de)
KR (1) KR940002272B1 (de)
DE (1) DE4124572A1 (de)
FR (1) FR2676844A1 (de)
GB (1) GB2256070A (de)
IT (1) IT1251003B (de)
TW (1) TW217455B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960013858B1 (ko) * 1994-02-03 1996-10-10 현대전자산업 주식회사 데이타 출력버퍼 제어회로
KR0172844B1 (ko) * 1995-12-11 1999-03-30 문정환 반도체 메모리 소자의 리페어 회로
GB9609834D0 (en) * 1996-05-10 1996-07-17 Memory Corp Plc Semiconductor device
KR100400307B1 (ko) 2001-05-09 2003-10-01 주식회사 하이닉스반도체 로오 리페어회로를 가진 반도체 메모리 장치
KR100414738B1 (ko) * 2001-12-21 2004-01-13 주식회사 하이닉스반도체 퓨즈를 이용한 비트라인 센싱 제어 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546455A (en) * 1981-12-17 1985-10-08 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS59117792A (ja) * 1982-12-24 1984-07-07 Hitachi Ltd 冗長回路を備えた半導体記憶装置
JPS59203299A (ja) * 1983-05-06 1984-11-17 Nec Corp 冗長ビット付メモリ
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
JPS63244494A (ja) * 1987-03-31 1988-10-11 Toshiba Corp 半導体記憶装置
JP2776835B2 (ja) * 1988-07-08 1998-07-16 株式会社日立製作所 欠陥救済用の冗長回路を有する半導体メモリ

Also Published As

Publication number Publication date
ITMI912229A1 (it) 1993-02-08
KR940002272B1 (ko) 1994-03-19
JPH04346000A (ja) 1992-12-01
GB9116165D0 (en) 1991-09-11
DE4124572C2 (de) 1993-07-01
GB2256070A (en) 1992-11-25
DE4124572A1 (de) 1992-11-26
IT1251003B (it) 1995-04-28
KR920022148A (ko) 1992-12-19
ITMI912229A0 (it) 1991-08-08
FR2676844A1 (fr) 1992-11-27

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