TW202337929A - 多環芳香族烴系光硬化性樹脂組成物 - Google Patents

多環芳香族烴系光硬化性樹脂組成物 Download PDF

Info

Publication number
TW202337929A
TW202337929A TW111143337A TW111143337A TW202337929A TW 202337929 A TW202337929 A TW 202337929A TW 111143337 A TW111143337 A TW 111143337A TW 111143337 A TW111143337 A TW 111143337A TW 202337929 A TW202337929 A TW 202337929A
Authority
TW
Taiwan
Prior art keywords
group
resin composition
photocurable resin
film
acid
Prior art date
Application number
TW111143337A
Other languages
English (en)
Chinese (zh)
Inventor
岸岡高広
服部隼人
森谷俊介
Original Assignee
日商日產化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日產化學股份有限公司 filed Critical 日商日產化學股份有限公司
Publication of TW202337929A publication Critical patent/TW202337929A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04—Acyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/20—Esters of polyhydric alcohols or phenols, e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/28—Treatment by wave energy or particle radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C08J2367/06—Unsaturated polyesters
    • C08J2367/07—Unsaturated polyesters having terminal carbon-to-carbon unsaturated bonds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW111143337A 2021-11-15 2022-11-14 多環芳香族烴系光硬化性樹脂組成物 TW202337929A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021185496 2021-11-15
JP2021-185496 2021-11-15

Publications (1)

Publication Number Publication Date
TW202337929A true TW202337929A (zh) 2023-10-01

Family

ID=86335858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111143337A TW202337929A (zh) 2021-11-15 2022-11-14 多環芳香族烴系光硬化性樹脂組成物

Country Status (7)

Country Link
US (1) US20250011507A1 (https=)
EP (1) EP4435517A4 (https=)
JP (1) JPWO2023085414A1 (https=)
KR (1) KR20240104152A (https=)
CN (1) CN118235092A (https=)
TW (1) TW202337929A (https=)
WO (1) WO2023085414A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI913135B (zh) * 2025-03-14 2026-01-21 奇美實業股份有限公司 負型感光性樹脂組成物及光阻圖案的形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025068373A1 (en) * 2023-09-29 2025-04-03 Merck Patent Gmbh Lithography compositions and methods of use thereof for sustainable and greener solutions for edge protection layers
KR102789050B1 (ko) * 2023-12-13 2025-04-01 충남대학교산학협력단 폴리비닐알코올 기반 감광가역성 고분자를 포함하는 감광가역성 포토레지스트 조성물 및 이의 제조방법
KR102789059B1 (ko) * 2023-12-13 2025-04-01 충남대학교산학협력단 셀룰로오스 기반 감광가역성 고분자를 포함하는 감광가역성 포토레지스트 조성물 및 이의 제조방법
CN120428521B (zh) * 2025-07-04 2025-09-26 湖南初源新材料股份有限公司 含有蒽甲基修饰壳聚糖光敏剂的感光树脂组合物及其应用

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413052A (en) * 1981-02-04 1983-11-01 Ciba-Geigy Corporation Photopolymerization process employing compounds containing acryloyl group and anthryl group
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US5919599A (en) * 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
WO2009104643A1 (ja) 2008-02-20 2009-08-27 日産化学工業株式会社 光硬化膜形成組成物及び光硬化膜形成方法
JP5518394B2 (ja) 2008-08-13 2014-06-11 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5297775B2 (ja) 2008-11-28 2013-09-25 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5572345B2 (ja) 2009-08-24 2014-08-13 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP2011228340A (ja) 2010-04-15 2011-11-10 Elpida Memory Inc 半導体装置の製造方法
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP2012022261A (ja) 2010-06-15 2012-02-02 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法
JP2012022258A (ja) 2010-07-16 2012-02-02 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法
JP5953670B2 (ja) 2010-08-27 2016-07-20 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP2012168279A (ja) 2011-02-10 2012-09-06 Tokyo Ohka Kogyo Co Ltd Ｅｕｖ用レジスト組成物、ｅｕｖ用レジスト組成物の製造方法、およびレジストパターン形成方法
JP6232812B2 (ja) 2012-08-08 2017-11-22 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
KR101420527B1 (ko) * 2012-11-30 2014-07-17 인하대학교 산학협력단 광이합체화 반응을 이용하는 포토레지스트 및 이를 이용한 유기발광 다이오드 표시장치 제조 방법
JP2015010878A (ja) 2013-06-27 2015-01-19 日本精機株式会社 液面位置検出装置及び液面位置検出方法
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6295846B2 (ja) 2014-06-17 2018-03-20 日産化学工業株式会社 ガラス保護膜形成用組成物及びガラス保護膜
JP6601039B2 (ja) 2014-07-31 2019-11-06 住友化学株式会社 レジスト組成物
JP6617459B2 (ja) 2014-07-31 2019-12-11 住友化学株式会社 レジスト組成物
JP6601041B2 (ja) 2014-07-31 2019-11-06 住友化学株式会社 レジスト組成物
JP6541508B2 (ja) 2014-08-25 2019-07-10 住友化学株式会社 塩、樹脂、レジスト組成物及びレジストパターンの製造方法
KR102952227B1 (ko) 2014-10-23 2026-04-13 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
JP2016090441A (ja) 2014-11-06 2016-05-23 東京応化工業株式会社 電子銃の電子線照射量の安定化方法、及びアウトガス評価方法
JP6585477B2 (ja) 2014-11-26 2019-10-02 住友化学株式会社 塩、樹脂、レジスト組成物及びレジストパターンの製造方法
US9580402B2 (en) 2015-01-08 2017-02-28 Sumitomo Chemical Company, Limited Salt, acid generator, photoresist composition, and method for producing photoresist pattern
KR102508142B1 (ko) 2015-10-13 2023-03-08 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
JP6436068B2 (ja) 2015-11-19 2018-12-12 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102394042B1 (ko) 2016-03-11 2022-05-03 인프리아 코포레이션 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법
KR102328436B1 (ko) 2016-04-28 2021-11-18 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
JP6726559B2 (ja) 2016-08-03 2020-07-22 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR102610448B1 (ko) 2016-08-12 2023-12-07 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
JP7061834B2 (ja) 2016-09-15 2022-05-16 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6439766B2 (ja) * 2016-09-23 2018-12-19 東京エレクトロン株式会社 塗布、現像方法及び塗布、現像装置
JP6963960B2 (ja) 2016-10-21 2021-11-10 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2018124354A (ja) * 2017-01-30 2018-08-09 Jsr株式会社 レジスト膜形成方法及び保護膜形成用組成物
JP7071660B2 (ja) 2017-04-11 2022-05-19 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
KR20240119168A (ko) 2017-04-14 2024-08-06 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
JP7091762B2 (ja) 2017-04-17 2022-06-28 Jsr株式会社 感放射線性樹脂組成物及びレジストパターンの形成方法
JPWO2018194123A1 (ja) 2017-04-20 2020-05-14 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
KR102395705B1 (ko) 2017-04-21 2022-05-09 후지필름 가부시키가이샤 Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법
JP6973274B2 (ja) 2017-05-22 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6973279B2 (ja) 2017-06-14 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6904302B2 (ja) 2017-06-14 2021-07-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
WO2018230334A1 (ja) 2017-06-15 2018-12-20 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6922841B2 (ja) 2017-06-21 2021-08-18 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6939702B2 (ja) 2017-06-21 2021-09-22 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR102611177B1 (ko) 2017-07-24 2023-12-08 제이에스알 가부시끼가이샤 극단 자외선 또는 전자선 리소그래피용 금속 함유막 형성 조성물, 극단 자외선 또는 전자선 리소그래피용 금속 함유막 및 패턴 형성 방법
JP7053625B2 (ja) 2017-07-31 2022-04-12 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP6801115B2 (ja) 2017-08-24 2020-12-16 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、レジスト膜付きマスクブランクス、レジスト膜付きマスクブランクスのパターン形成方法
KR102404436B1 (ko) 2017-08-31 2022-06-02 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
KR102285016B1 (ko) 2017-08-31 2021-08-03 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
US11674051B2 (en) * 2017-09-13 2023-06-13 Nissan Chemical Corporation Stepped substrate coating composition containing compound having curable functional group
JP7044011B2 (ja) 2017-09-13 2022-03-30 信越化学工業株式会社 重合性単量体、重合体、レジスト材料、及びパターン形成方法
WO2019054282A1 (ja) 2017-09-15 2019-03-21 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP6937834B2 (ja) 2017-09-20 2021-09-22 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法
TWI778122B (zh) 2017-09-20 2022-09-21 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法
JP6866866B2 (ja) 2017-09-25 2021-04-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7010195B2 (ja) 2017-11-29 2022-01-26 信越化学工業株式会社 パターン形成方法
JPWO2019123842A1 (ja) 2017-12-22 2020-12-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、レジスト膜付きマスクブランクス、フォトマスクの製造方法、電子デバイスの製造方法
JP6988760B2 (ja) 2017-12-27 2022-01-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
CN111788525B (zh) 2018-02-28 2023-08-08 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法、树脂
KR102476090B1 (ko) 2018-02-28 2022-12-09 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
KR102361263B1 (ko) 2018-02-28 2022-02-14 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물용 수지의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
WO2019172054A1 (ja) 2018-03-08 2019-09-12 Jsr株式会社 感放射線性樹脂組成物及びその製造方法並びにレジストパターン形成方法
KR20200122354A (ko) 2018-03-26 2020-10-27 후지필름 가부시키가이샤 감광성 수지 조성물과 그 제조 방법, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
JP7185684B2 (ja) 2018-03-27 2022-12-07 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法
WO2019187803A1 (ja) 2018-03-30 2019-10-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
EP3779596A4 (en) 2018-03-30 2021-07-07 FUJIFILM Corporation NEGATIVE LIGHT SENSITIVE COMPOSITION FOR EUV LIGHT, METHOD OF PATTERN SHAPING AND METHOD OF MANUFACTURING AN ELECTRONIC DEVICE
JP6973265B2 (ja) 2018-04-20 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7268684B2 (ja) 2018-10-05 2023-05-08 日産化学株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP7601107B2 (ja) * 2020-10-08 2024-12-17 Jsr株式会社 保護膜形成用組成物、保護膜、保護膜の形成方法、及び基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI913135B (zh) * 2025-03-14 2026-01-21 奇美實業股份有限公司 負型感光性樹脂組成物及光阻圖案的形成方法

Also Published As

Publication number Publication date
WO2023085414A1 (ja) 2023-05-19
JPWO2023085414A1 (https=) 2023-05-19
US20250011507A1 (en) 2025-01-09
CN118235092A (zh) 2024-06-21
EP4435517A4 (en) 2025-03-19
KR20240104152A (ko) 2024-07-04
EP4435517A1 (en) 2024-09-25

Similar Documents

Publication Publication Date Title
JP7050137B2 (ja) ハードマスクおよび充填材料として安定な金属化合物、その組成物、およびその使用方法
TW202337929A (zh) 多環芳香族烴系光硬化性樹脂組成物
JP6810696B2 (ja) ハードマスク組成物および半導体基板上での微細パターンの形成方法
TWI531865B (zh) A multilayer photoresist process pattern forming method and an inorganic film forming composition for a multilayer photoresist process
TW201616239A (zh) 感光性樹脂組成物、硬化膜、具備硬化膜的元件及半導體裝置、以及半導體裝置的製造方法
JP7647996B2 (ja) 半導体製造用ウエハ端部保護膜形成用組成物
US10090163B2 (en) Inorganic film-forming composition for multilayer resist processes, and pattern-forming method
JP5938989B2 (ja) 多層レジストプロセス用無機膜形成組成物及びパターン形成方法
US12339586B2 (en) Photocurable resin composition containing self-crosslinkable polymer
CN112005168A (zh) 抗蚀剂下层膜形成用组合物、光刻用下层膜和图案形成方法
CN111607089A (zh) 官能性聚氢倍半硅氧烷树脂组成物、产生其的方法及其用途
WO2015012177A1 (ja) パターン形成方法
TW201930379A (zh) 乙炔衍生之複合物，包含其之組成物，製造使用其之塗層的方法，及製造包含該塗層之裝置的方法
WO2023033094A1 (ja) 半導体製造用ウエハ端部保護膜形成組成物
WO2018155377A1 (ja) レジストプロセス用膜形成材料、パターン形成方法及びポリシロキサン
JP6741957B2 (ja) レジストプロセス用膜形成材料及びパターン形成方法
KR20150114900A (ko) 막 형성용 조성물 및 패턴 형성 방법