TW202134490A - 氮化鋁晶圓片之製造方法及其氮化鋁晶圓片 - Google Patents
氮化鋁晶圓片之製造方法及其氮化鋁晶圓片 Download PDFInfo
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- TW202134490A TW202134490A TW109108408A TW109108408A TW202134490A TW 202134490 A TW202134490 A TW 202134490A TW 109108408 A TW109108408 A TW 109108408A TW 109108408 A TW109108408 A TW 109108408A TW 202134490 A TW202134490 A TW 202134490A
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- aluminum nitride
- pressure
- nitride wafer
- manufacturing
- wafer
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Images
Classifications
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- C—CHEMISTRY; METALLURGY
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Abstract
本發明為一種氮化鋁晶圓片之製造方法及氮化鋁晶圓片,其中該製造方法包含於該氮化鋁晶圓片材的外圓上形成至少一對位槽口或對位平邊,該對位槽口及對位平邊可使該氮化鋁晶圓片在半導體製程過程中不會產生製程不良的狀況,且具備精準對位功能,以提高良率。本發明之氮化鋁晶圓片具有高熱傳導率、高介電常數、絕緣性及散熱佳,適於應用在半導體製程程序、電子產品及半導體設備所需,並作為電子產品。
Description
本發明係一種氮化鋁晶圓片及其製造方法,特別係一種具有對位槽口(Notch)或對位平邊、或周圍導角的氮化鋁晶圓片,可用於半導體製程,其所製造之氮化鋁晶圓片可用於半導體電子產品。
一般晶圓片係將矽拉製提煉、融解、純化及蒸餾等程序後完成單晶矽棒,隨將單晶矽棒經過加工後,即研磨及拋光等,獲得晶圓片。晶圓片的加工方法種類包含化學加工、機械加工及化學機械加工。化學加工包含鹼性或酸性蝕刻,機械加工包含研磨或拋光等,而化學機械加工係將利用強酸或強鹼在矽晶圓表面先腐蝕出一層薄而軟的氧化層後,再進行機械拋光。
研磨目的係將晶圓片打磨將厚度控制在能接受的範圍,而拋光則係要改善研磨所造成的瑕疵,將晶圓表面平坦化、平整化及平面化,使晶圓片表面平滑,不易有微粒附著,因為晶圓片缺陷來源多為微粒、晶體原生的空坑、殘餘物或刮痕。
研磨過程係將晶圓塊材先切割成晶圓片,常用的切割方式包還切割刀或線切割,隨後再進行研磨,以達所需厚度。當晶圓片厚度太厚時,會造成散熱不良,一般功率分離器中的晶圓片厚度約350~450μm,集成電路由於需要更薄的厚度,厚度一般為180μm以下。
陶瓷具有高介電常數、絕緣性、高熱傳導率、耐熱性及散熱性佳,特別係在高濕度下具有穩定性能。經發明人研究調查,陶瓷材料中,多晶氮化鋁尤具有高熱傳導率(約170~240W/mk),係為氧化鋁的7至9倍,且具有抗腐蝕性、耐高溫、低膨脹係數、高介電常數及高機械強度等特性,即適於作為晶圓片之材料,效能可優於使用矽作為晶圓材料。從而,本發明欲提供一種氮化鋁晶圓片之製造方法及其所製造之氮化鋁晶圓片;本發明之氮化鋁晶圓片除使用氮化鋁為材料外,晶圓片上設置有對位槽口(Notch)或對位平邊,可有效改善加工過程中對位不佳或晶圓片破裂或刮傷問題。
是以,本發明之目的為提供一種氮化鋁晶圓片之製造方法,其包含步驟:(a)將一氮化鋁生胚塊材經高溫處理為一氮化鋁晶圓塊材;(b)於該氮化鋁晶圓塊材的外圓上形成至少一對位槽口或一對位平邊,切割該氮化鋁晶圓塊材為複數個氮化鋁晶圓片材;及(c)將每一該氮化鋁晶圓片材進行研磨拋光。
於較佳實施例中,該氮化鋁生胚塊材係將氮化鋁生胚設置於模具內,以機械或油壓成型後,以水壓、油壓或氣壓進行均壓處理所獲得;其中,該機械或油壓成型係在壓力噸數為98066.50N~9806650.00N及該模具內壓力為-0.063atm~100atm所完成,該水壓、油壓或氣壓做進行均壓處理係在壓力為100atm~8000atm及溫度為10℃~100℃所完成。
本發明之另一目的為提供一種氮化鋁晶圓片之製造方法,其包含下列步驟:(a) 提供一氮化鋁生胚片材,該氮化鋁生胚片材可為將一氮化鋁生胚以刮片塗覆形成所獲得、或將該氮化鋁生胚以刮片塗覆形成一氮化鋁生胚捲材後,裁切該氮化鋁生胚捲材所獲得;(b)將該氮化鋁生胚片材經高溫處理為一氮化鋁晶圓片材;及(c)於該氮化鋁晶圓片材的外圓上形成至少一對位槽口或一對位平邊,及將該氮化鋁晶圓片材進行研磨拋光。
於較佳實施例中,該高溫處理包含一脫脂過程及一燒結過程;其中,該脫脂過程係於200℃~900℃且有氫、氮、氧、氬或空氣之環境下進行;該燒結過程係於1000℃~3000℃及真空、常壓或高壓的壓力下,且係在有氫、氮、氬之環境下進行。
於較佳實施例中,該氮化鋁生胚包含氮化鋁顆粒;其中,該氮化鋁顆粒係將一氧化鋁及/或一純鋁之粉體混合含氮、碳、氫原子之有機膠材進行混合後,在含有氫、氮、碳原子之氣體環境下進行高溫碳熱還原反應後,在含有氮、氧或大氣之氣體氣氛環境下進行高溫除碳後造粒所獲得。
於較佳實施例中,該高溫碳熱還原反應係在溫度600℃~3000℃所完成。
於較佳實施例中,該步驟(c)中,可於進行研磨拋光前或後,將該氮化鋁晶圓片材之外圓(即周圍)形成導角,其中該導角之形狀包含直角型、半圓形、不對稱半圓形、半橢圓形、不對稱半橢圓形、對稱梯形、不對稱梯形、對稱半圓形及梯形組合、或不對稱半圓形及梯形組合。
於較佳實施例中,該對位槽口之型狀包含V型凹槽型,且該V型凹槽型的V型底部及左右上部為圓弧,以避免應力集中造成晶圓破裂。
於較佳實施例中,該對位平邊係經雷射、水刀或機械加工所形成。
本發明之另一目的為提供一種氮化鋁晶圓片,其係使用如上所述之製造方法所獲得之氮化鋁晶圓片;其中,該氮化鋁晶圓片的外圓包含至少一對位槽口或一對位平邊。
相較於習知技術,本發明之氮化鋁晶圓片之製造方法可獲得具有抗腐蝕性、耐高溫、低膨脹係數、高介電常數及高機械強度的氮化鋁晶圓片;本發明之氮化鋁晶圓片具有對位槽口或對位平邊,能改善對位不佳而導致切片時過度歪斜,研磨及拋光時無法獲得平坦及平整的晶圓表面而有凹凸不明的表面,降低良率等問題。
以下實施方式不應視為過度地限制本發明。本發明所屬技術領域中具有通常知識者可在不背離本發明之精神或範疇的情況下對本文所討論之實施例進行修改及變化,而仍屬於本發明之範圍。
本發明之第一實施態樣的氮化鋁晶圓片之製造方法包含步驟:(a)將一氮化鋁生胚塊材經高溫處理為一氮化鋁晶圓塊材;(b)於該氮化鋁晶圓塊材的外圓上形成至少一對位槽口或一對位平邊,切割該氮化鋁晶圓塊材為複數個氮化鋁晶圓片材;及(c)將每一該氮化鋁晶圓片材進行研磨拋光。
本發明之第一實施態樣中,所述的「氮化鋁生胚塊材」係將氮化鋁生胚設置於模具內,以機械或油壓成型後,以水壓、油壓或氣壓進行均壓處理所獲得,且該均壓處理以等向為佳。其中,氮化鋁生胚設置於模具內並於真空、常壓或高壓下以機械或油壓成型之過程,可使完成後的氮化鋁晶圓片的孔洞減少,並降低晶圓片表面受到粒子沾附;水壓、油壓或氣壓進行均壓處理之過程,可使壓縮後的氮化鋁生胚密度一致,獲得均質氮化鋁生胚。該氮化鋁生胚設置於模具內,該機械或油壓進行成型係在壓為98066.50N~9806650.00N (即10噸~1000噸)所完成,例如98066.50N、4900332.50N、980665.00N、1961330.00N、2941995.00N、3922660.00N、4903325.00N、5883990.00N、6864655.00N、7845320.00N、8825985.00N或9806650.00N,且本發明不限於此等,而模具內的壓力可為真空、常壓或高壓,壓力範圍為-0.063atm~100atm,例如-0.063atm、1atm、5atm、10atm、20atm、30atm、40atm、50atm、60atm、70atm、80atm、90atm或100atm,且本發明不限於此等。該水壓、油壓或氣壓進行均壓處理係在壓力為100atm~8000atm及溫度為10℃~100℃所完成,該壓力可例如100 atm、200 atm、300 atm、400 atm、500 atm、600 atm、700 atm、800 atm、900 atm、1000atm、1500 atm、2000atm、2500 atm、3000atm、3500 atm、4000atm、4500 atm、5000atm、5500 atm、6000atm、6500 atm、7000atm、7500或8000atm等,且本發明不限於此等,該溫度可例如10℃、20℃、30℃、40℃、50℃、60℃、70℃、80℃、90℃或100℃,且本發明不限於此等。
本發明之第一實施態樣中,該步驟(b)中,切割該氮化鋁晶圓塊材為複數個氮化鋁晶圓片材之過程可使用通用的晶圓塊切割方法,其包含刀切或線切割,具體例如鑽石刀進行刀切、鋼琴線進行線切割,且本發明並不用限於此等。
本發明之第二實施態樣的氮化鋁晶圓片之製造方法包含步驟,其包含下列步驟:(a) 提供一氮化鋁生胚片材,該氮化鋁生胚片材可為將一氮化鋁生胚以刮片塗覆形成所獲得、或將該氮化鋁生胚以刮片塗覆形成一氮化鋁生胚捲材後,裁切該氮化鋁生胚捲材所獲得;(b)將該氮化鋁生胚片材經高溫處理為一氮化鋁晶圓片材;及(c)於於該氮化鋁晶圓片材的外圓上形成至少一對位槽口或一對位平邊,及將該氮化鋁晶圓片材進行研磨拋光。
本發明中,所述的「氮化鋁生胚」係將氮化鋁顆粒及結合樹脂及/或分散劑混合所獲得。較佳地,該氮化鋁生胚更可視需要地添加其他添加劑,例如塑化劑,且本發明並不限於此,塑化劑可使該氮化鋁晶圓片具有撓屈性。
本發明中,所述的「結合樹脂」包含聚乙烯醇縮丁醛(PVB)、聚乙烯醇(PVA)、聚乙二醇、乙基纖維素、聚丙酮、低烷基丙烯酸酯共聚物、甲基丙烯酸酯任一者或其等之組合,而該結合樹脂的添加量佔該氮化鋁生胚之重量百分比為0.1wt%~10wt%,例如0.1wt%、1wt%、3wt%、5wt%、7wt%或10wt%,且本發明並不限於此等。
本發明中,所述的「分散劑」可為有機溶劑,其包含醇類、酮類、酯類、羧酸類或烴類等,具體例如:甲醇、乙醇(95%)、正丁醇、戊醇、甲苯乙醇(95%)、雙丙酮醇等之醇類;丙酮、甲基乙基酮、戊酮、甲基異丁酮、環己酮等之酮類,醋酸甲酯、乙酸乙酯(85%)、乙酸丁酯、醋酸異戊酯、磷酸三丁酯等之酯類,醋酸等之羧酸類,四氯化碳、二氯丙烷等之為鹵素取代的烴類;甲苯、1,4-二氧陸圜、及甲基溶纖劑、乙基溶纖劑任一者或其等之組合,且本發明並不限於此等。
本發明中,所述的「氮化鋁顆粒」係將一氧化鋁及/或一純鋁之粉體混合含氮、碳、氫原子之有機膠材進行混合後,於真空、常壓或高壓及含有氮、碳。其中碳源可為固體與氣體或原子、氫原子之氣體環境下進行高溫碳熱還原反應後,於氮、氧或大氣之氣體氣氛環境下進行高溫除碳後所獲得,隨後進行造粒所獲得。所述的「高溫碳熱還原反應」將氧化鋁或鋁之氧原子與碳原子形成一氧化碳或二氧化碳,其氧原子空位與氮原子互換或置入氮原子,形成氮化鋁;其中,該高溫碳熱還原反應係在含有氫、氮、碳氣體氣氛環境,壓力為-0.063atm~6000atm及溫度為600℃~3000℃下所完成,該壓力包含-0.063atm、1atm、100atm、500atm、1000atm、1500atm、2000atm、3000atm、4000atm、5000atm或6000atm,且本發明不限於此等;該溫度包含600℃、700℃、800℃、900℃、1000℃、1100℃、1200℃、1600℃、2000℃、2100℃、2200℃、2300℃、2400℃、2500℃、2600℃、2700℃、2800℃、2900℃或3000℃,且本發明不限於此等。所述的「高溫除碳後」係將該高溫碳熱還原反應中可能產生不必要的碳或碳化物除去,且溫度為200℃~900℃下所完成,例如200℃、300℃、400℃、500℃、600℃、700℃、800℃或900℃,且本發明不限於此等。該氮化鋁顆粒之粒徑大小為10nm~200um,例如10 nm、20 nm、30nm、40nm、50nm、60nm、70nm、80nm、90nm、100nm、150 nm、200 nm、250 nm、300 nm、350 nm、400 nm、450 nm、500 nm、550nm、600 nm、650 nm、700 nm、750 nm、800 nm、850 nm、900 nm、1um、10um、20um、30um、40um、50um、60um、70um、80um、90um、100um、110um、120 um、130um、140um、150um、160 um、170um、180um、190um或200um,且本發明不限於此等。
上述之「造粒」過程可視需要地添加一助燒結劑及/或一黏結劑與分散劑。該造粒之方式包含粉體造粒、霧化造粒、噴霧造粒、攪拌滾動/混合造粒、壓力成形造粒、燒結成型造粒等,以粉體造粒、霧化造粒及噴霧造粒為較佳,更以粉體造粒為最佳。其中,該助燒結劑包含氧化物或氮化物,該氧化物包含氧化鎂、氧化鋯、氧化鈣、氧化錸、氧化釔、氧化矽、硼、碳任一者或其等之組合,該氮化物包含氮化鋁、氮化硼任一者或其等之組合,且該助燒結劑中更可包含有鈰、銪、鉺、釹、鋱、釤、銩、鏑、釔、釓、鐠、鑥、鈥、鉕、鑭、鐿之金屬,該助燒結劑佔該氮化鋁顆粒之重量為0wt%~20wt%之間,例如0wt%、0.5%、1wt%、1.5%或、2wt%、5wt%、10 wt%、15 wt%或20 wt%,且本發明並不限於此等;該黏結劑包含聚乙烯醇縮丁醛(PVB)、聚乙二醇、阿拉伯樹膠、海藻酸胺、甲基纖維素、烯甲基纖維素、乙烯纖維素、烴乙基纖維素、甲基丙烯酸胺、亞甲基雙丙烯醯胺、聚氧乙烯任一者或其等之組合,該黏結劑佔該氮化鋁顆粒之重量為0.1wt%~20wt%之間,例如0.1wt%、1wt%、3wt%、5wt%、7wt%、10wt%、15 wt%或20 wt%,且本發明並不限於此等;該分散劑包含聚丙烯酸、聚丙烯、聚丙烯胺、聚乙烯、聚乙二烯、聚乙二醇、阿拉伯樹膠、明膠、魚油、飛魚油、油酸、蓖麻油任一者或其等組合,該分散劑佔該氮化鋁顆粒之重量為0.1wt%~20wt%之間,例如0.1wt%、1wt%、2wt%、3wt%、4wt%、5wt%、10wt%、15 wt%或20wt%等,且本發明並不限於此等。
本發明中,所述的「含氮、碳、氫原子之有機膠材」包含酚醛樹脂、聚丙烯腈、ABS樹脂、丁苯橡膠或碳粉任一者或其等之組合,且以酚醛樹脂為佳。
本發明中,所述的「高溫處理」包含一脫脂過程及一燒結過程。所述的「脫脂過程」係通過加熱及其它物理方法將該氮化鋁生胚內之有機物排除,可採用傳統的熱脫脂、溶劑脫脂、催化脫脂以及水基萃取脫脂,較佳為採用熱脫脂,其溫度為200℃~900℃,例如200℃、250℃、300℃、350℃、400℃、450℃、500℃、550℃、600℃、650℃、700℃、750℃、800℃、850℃或900℃等,且係在有氫、氮、氧、氬或空氣之環境下進行,此脫脂步驟可將該氮化鋁顆粒中的黏結劑去除。所述的「燒結過程」係於高溫及真空、常壓或高壓的壓力下進行的燒結處理過程,且係在有氫、氮、氬之環境下進行;其中,該高溫係為1000℃~3000℃,具體例如1000℃、1200℃、1500℃、2000℃、2500℃或3000℃,且本發明不限於此等;該真空、常壓或高壓的壓力為環境為-0.063atm~6000atm,具體例如-0.063atm、0atm、1atm、100atm、500atm、1000atm、1500atm、2000atm、3000atm、4000atm、5000atm或6000atm,且本發明不限於此等。
本發明中,該步驟(c)中,可於進行研磨拋光前或後,將該氮化鋁晶圓片材周圍形成導角。圖1為本發明之氮化鋁晶圓片不具有導角之示意圖,圖2本發明之氮化鋁晶圓片具有導角之示意圖。
本發明中,所述的「導角」係於該氮化鋁晶圓片材的周圍形成特定形狀,該導角可由通用的邊緣研磨機或機械加工機(CNC)所完成,具體例如可形成特定形狀之砂輪,如圖3(a)及(b)所示:該氮化鋁晶圓片材可經由研磨導角用的砂輪6進行研磨,以獲得半圓形導角2。如圖4(a)至(i)所示,該導角之形狀包含:(a) 直角形;(b) 半圓形;(c) 不對稱半圓形;(d) 半橢圓形;(e) 不對稱半橢圓形;(f) 對稱梯形;(g) 不對稱梯形;(h) 對稱梯形及半圓組合形;(i) 不對稱梯形及半圓組合形,且本發明並不限於此等。導角可防止晶圓片於製程中有應力集中的問題及毛邊,並防止晶圓片的周圍崩裂,及利於後續製程中設置光阻層或磊晶層的平坦度,使光阻層或磊晶層可表面均勻分布,但特殊製程亦可不做導角處理。
本發明中,所述的「對位槽口或對位平邊」係將該氮化鋁晶圓片材外援設置至少一特定狀之記號;如圖2所示,該對位槽口可為V型凹槽型,該V型凹槽尖角處可做圓弧化,即該V型凹槽型的V型底部及左右上部為圓弧,以避免應力集中造成晶圓破裂;如圖5所示,該對位平邊為平面邊型。其中,該對位槽口可使用砂輪所完成,如圖3(a)及(b)所示,使用研磨對位槽口用的砂輪7於該氮化鋁晶圓片的外圓形成一對位槽口2;該對位平邊可為通用切割晶圓片外圓的切割器所完成,其方式包含雷射、水刀或機械加工所形成,且本發明不限於此等。該對位槽口或對位平邊可使該氮化鋁晶圓片在製程中,對準位置更為精準,提升良率。
本發明中,所述的「研磨」可為乾式或濕式研磨、以及單向或雙向研磨。若為單向研磨之時,可將該氮化鋁晶圓片背貼UV膠、熱熔膠或塗佈膠材,以增加其均勻性。
本發明中,所述的「拋光」可為乾式或濕式、以及單面拋光或雙面拋光。
本發明之氮化鋁晶圓片具有熱傳導係數為100W/mk~250W/mk,故容易散熱且不因熱而膨脹,具體例如100 W/mk、110 W/mk、120 W/mk、130 W/mk、140 W/mk、150 W/mk、160 W/mk、170 W/mk、180 W/mk、190 W/mk、200 W/mk、210 W/mk、220W/mk、230 W/mk、240 W/mk或250 W/mk;介電常數為8~9(1MHz),故具有絕緣的效果,具體例如8 (1MHz)、8.1(1MHz)、8.2(1MHz)、8.3(1MHz)、8.4(1MHz)、8.5(1MHz)、8.6(1MHz)、8.7(1MHz)、8.8(1MHz)、8.9(1MHz)、或9(1MHz);彎取強度為200~600MPa,具體例如200 MPa、250 MPa、300 MPa、350 MPa、400 MPa、450 MPa、500 MPa、550MPa或600 MPa,故高機械強度。
本發明之氮化鋁晶圓片之製造方法所得之氮化鋁晶圓片可為18吋、12吋、10吋、8吋、6吋、4.5吋、4吋、2吋,或其他加工可製造能力範圍之圓形,具有絕緣、散熱、介電係數高之優勢,低經過後端半導體加工程序,光罩、蝕刻、封裝、及測試後,便可用於電子產業或半導體產業,諸如三維電路封裝、功率半導體元件封裝、電路製造等。
[具體實施例 ]
本發明以下敘述為此技術領域中通常知識者可輕易明瞭此發明之必要技術,且只要不違反其中的精神及範圍,就可以多樣的改變及修飾這個發明來適應不同的用途及狀況。如此,其他的實施例亦包含於申請專利範圍中。
製備例
1-
製備氮化鋁顆粒形成
將1kg氧化鋁、1kg純鋁粉體及酚醛樹酯經球磨混合酚醛樹酯與碳粉造粒後,將粒子移置高溫爐於1 atm及1600℃並通入乙炔、氮氣、氫氣進行高溫碳熱還原反應20小時,將還原後的粒子置於大氣環境下,以600℃ 24小時進行高溫除碳後,使用大川原噴霧造粒機進行造粒得到粒徑為60~90um大小與1.1kg氮化鋁顆粒。
實施例
1-
氮化鋁晶圓片之製造方法
1
將上述製備例1所得之3kg氮化鋁顆粒混合加入10%聚乙烯醇縮丁醛(PVB)樹脂、1%分散劑獲得氮化鋁生胚後,將該氮化鋁生胚設置於油壓機模具內,於真空下以壓力1961330N及模內壓力-0.063atm做高壓成型,並使用EPSI之水壓機以3000atm壓力等向壓力及30℃下做等壓均壓處理,形成氮化鋁生胚塊材;將該氮化鋁生胚塊材移置大氣下600℃下脫脂進行後,經由島津高溫爐進行燒結於10atm及溫度為1800℃做燒結處理,形成氮化鋁晶圓塊材;將該氮化鋁晶圓塊材移置砂輪研磨機切割出一對位槽口後,使用多線切割為 8吋氮化鋁晶圓片材,並經雙向研磨機台進行濕式將雙面研磨平面再經單向減薄機減薄至所需尺寸,且以對應之具形狀成型之砂輪研磨,使形成周圍為半圓形導角後,使用單向拋光機台乾式雙面拋光,獲得氮化鋁晶圓片。
實施例
2-
氮化鋁晶圓片之製造方法
2
將上述製備例1所得之3kg氮化鋁顆粒混合加入10%聚乙烯醇縮丁醛(PVB)樹脂、1%分散劑獲得氮化鋁生胚後,以刮刀塗覆形成氮化鋁生胚片材,並以10分鐘60℃ 10分鐘乾燥;將該氮化鋁生胚片材移置大氣下600℃下脫脂進行後,經由島津高溫爐進行燒結於10atm及溫度為1800℃做燒結處理,形成氮化鋁晶圓片材;將該氮化鋁晶圓片材移置雷射機台下,在外圓上形成一對位槽口,做出一對位槽口後,經雷射切割為8吋圓形晶片薄板,並經雙向研磨機台進行濕式將雙面研磨平面再經單向減薄機減薄至所需尺寸,且以對應之具形狀成型之砂輪研磨,使形成周圍呈半圓形導角後,使用單向拋光機台乾式雙面拋光,獲得氮化鋁晶圓片。
測試例
.
性能測試
將實施例1及2製造之氮化鋁晶圓片、比較例1矽晶圓片、比較例2氧化鋁晶圓片及比較例3玻璃晶圓片進行性能測試,測試項目包含熱傳導、彎曲強度及介電常數。
測試結果別如表一所示:相較於其他材質的矽晶圓片,實施例1及2氮化鋁晶圓片具有高熱傳導較高、高彎曲強度及高介電常數,故具有良好的性能。
表一
實施例1 (氮化鋁) | 實施例2 (氮化鋁) | 比較例1 (矽) | 比較例2 (氧化鋁) | 比較例3 (玻璃) | |
熱傳導(W/mk) | 170 | 230 | 130 | 30 | 12 |
彎曲強度(Mpa) | 450 | 350 | 200 | 450 | 250 |
介電常數(1MHz) | 9 | 9 | 7 | 9 | 6 |
綜上,本發明之氮化鋁晶圓片之製造方法可獲得具有抗腐蝕性、耐高溫、低膨脹係數、高介電常數及高機械強度的氮化鋁晶圓片;本發明之氮化鋁晶圓片具有對位槽口或對位平邊,能改善對位不佳而導致切片時過度歪斜,研磨及拋光時無法獲得平坦及平整的晶圓表面而有凹凸不明的表面,降低良率等問題。
以上已將本發明做一詳細說明,惟以上所述者,僅惟本發明之一較佳實施例而已,當不能以此限定本發明實施之範圍,即凡依本發明申請專利範圍所作之均等變化與修飾,皆應仍屬本發明之專利涵蓋範圍內。
1:氮化鋁晶圓片
2:對位槽口
3:導角
4:對位平邊
6:研磨導角用的砂輪
7:研磨對位槽口用的砂輪
圖1為本發明之氮化鋁晶圓片不具有導角之示意圖。
圖2為本發明之氮化鋁晶圓片具有導角及V型凹槽型之對位槽口之示意圖(該V型凹槽型的V型底部及左右上部為圓弧)。
圖3為本發明之氮化鋁晶圓片形成對位槽口及導角之方法之示意圖。
圖4為本發明之氮化鋁晶圓片之導角形狀之示意圖:(a) 直角形;(b) 半圓形;(c) 不對稱半圓形;(d) 半橢圓形;(e) 不對稱半橢圓形;(f) 對稱梯形;(g) 不對稱梯形;(h) 對稱梯形及半圓組合形;(i) 不對稱梯形及半圓組合形。
圖5為本發明之氮化鋁晶圓片具有對位平邊之示意圖。
1:氮化鋁晶圓片
2:對位槽口
3:導角
Claims (10)
- 一種氮化鋁晶圓片之製造方法,其包含下列步驟: (a)將一氮化鋁生胚塊材經高溫處理為一氮化鋁晶圓塊材; (b)於該氮化鋁晶圓塊材的外圓上形成至少一對位槽口或一對位平邊,切割該氮化鋁晶圓塊材為複數個氮化鋁晶圓片材;及 (c)將每一該氮化鋁晶圓片材進行研磨拋光。
- 如請求項1項之製造方法,其中,該氮化鋁生胚塊材係將氮化鋁生胚設置於模具內,以機械或油壓成型後,以水壓、油壓或氣壓進行均壓處理所獲得;其中,該機械或油壓成型係在壓力噸數為98066.50N~9806650.00N及該模具內壓力為-0.063atm~100atm所完成,該水壓、油壓或氣壓做進行均壓處理係在壓力為100atm~8000atm及溫度為10℃~100℃所完成。
- 一種氮化鋁晶圓片之製造方法,其包含下列步驟: (a) 提供一氮化鋁生胚片材,該氮化鋁生胚片材可為將一氮化鋁生胚以刮片塗覆形成所獲得、或將該氮化鋁生胚以刮片塗覆形成一氮化鋁生胚捲材後,裁切該氮化鋁生胚捲材所獲得; (b)將該氮化鋁生胚片材經高溫處理為一氮化鋁晶圓片材;及 (c)於該氮化鋁晶圓片材的外圓上形成至少一對位槽口或一對位平邊,及將該氮化鋁晶圓片材進行研磨拋光。
- 如請求項1或3之製造方法,其中,該高溫處理包含一脫脂過程及一燒結過程;其中,該脫脂過程係於200℃~900℃且有氫、氮、氧、氬或空氣之環境下進行;該燒結過程係於1000℃~3000℃及真空、常壓或高壓的壓力下,且係有氫、氮、氬之環境下進行。
- 如請求項2或3之製造方法,其中,該氮化鋁生胚包含氮化鋁顆粒;其中,該氮化鋁顆粒係將一氧化鋁及/或一純鋁之粉體混合含氮、碳、氫原子之有機膠材進行混合後,在含有氫、氮、碳、之氣體環境下進行高溫碳熱還原反應後,在含有氮、氧或大氣之氣體氣氛環境下進行高溫除碳後造粒所獲得。
- 如請求項5所述之製造方法,其中,該高溫碳熱還原反應係在溫度600℃~3000℃所完成。
- 如請求項1或3所述之製造方法,其中,該步驟(c)中,可於進行研磨拋光前或後,將該氮化鋁晶圓片材周圍形成導角,其中該導角之形狀包含直角型、半圓形、不對稱半圓形、半橢圓形、不對稱半橢圓形、對稱梯形、不對稱梯形、對稱半圓形及梯形組合、或不對稱半圓形及梯形組合。
- 如請求項1或3所述之製造方法,其中,該對位槽口之型狀包含V型凹槽型,且該V型凹槽型的V型底部及左右上部為圓弧。
- 如請求項1或3所述之製造方法,其中,該對位平邊係經雷射、水刀或機械加工所形成。
- 一種氮化鋁晶圓片,其係使用如請求項1至9任一項所述之製造方法所獲得之氮化鋁晶圓片;其中,該氮化鋁晶圓片的外圓包含至少一對位槽口或一對位平邊。
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CN202010197138.0A CN113385987A (zh) | 2020-03-13 | 2020-03-19 | 氮化铝晶圆片的制造方法及其氮化铝晶圆片 |
US16/922,127 US11355448B2 (en) | 2020-03-13 | 2020-07-07 | Method for making aluminum nitride wafer and aluminum nitride wafer made by the same |
JP2020118296A JP7335617B2 (ja) | 2020-03-13 | 2020-07-09 | 窒化アルミニウムウェハの製造方法およびその窒化アルミニウムウェハ |
KR1020200111849A KR102455667B1 (ko) | 2020-03-13 | 2020-09-02 | 질화알루미늄 웨이퍼의 제조 방법 및 그 질화알루미늄 웨이퍼 |
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