TWI594291B - 陶瓷晶圓片及其製造方法 - Google Patents

陶瓷晶圓片及其製造方法 Download PDF

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Publication number
TWI594291B
TWI594291B TW105126245A TW105126245A TWI594291B TW I594291 B TWI594291 B TW I594291B TW 105126245 A TW105126245 A TW 105126245A TW 105126245 A TW105126245 A TW 105126245A TW I594291 B TWI594291 B TW I594291B
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Taiwan
Prior art keywords
ceramic
pressure
wafer
atm
powder
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TW105126245A
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English (en)
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TW201810358A (zh
Inventor
江瑞霞
曾彥凱
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鴻創應用科技有限公司
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Priority to TW105126245A priority Critical patent/TWI594291B/zh
Priority to US15/353,057 priority patent/US10497638B2/en
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Publication of TW201810358A publication Critical patent/TW201810358A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B11/00—Apparatus or processes for treating or working the shaped or preshaped articles
    • B28B11/08—Apparatus or processes for treating or working the shaped or preshaped articles for reshaping the surface, e.g. smoothing, roughening, corrugating, making screw-threads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B11/00—Apparatus or processes for treating or working the shaped or preshaped articles
    • B28B11/14—Apparatus or processes for treating or working the shaped or preshaped articles for dividing shaped articles by cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B3/00—Producing shaped articles from the material by using presses; Presses specially adapted therefor
    • B28B3/003—Pressing by means acting upon the material via flexible mould wall parts, e.g. by means of inflatable cores, isostatic presses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B3/00—Producing shaped articles from the material by using presses; Presses specially adapted therefor
    • B28B3/006—Pressing by atmospheric pressure, as a result of vacuum generation or by gas or liquid pressure acting directly upon the material, e.g. jets of compressed air
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    • B28B3/00—Producing shaped articles from the material by using presses; Presses specially adapted therefor
    • B28B3/02—Producing shaped articles from the material by using presses; Presses specially adapted therefor wherein a ram exerts pressure on the material in a moulding space; Ram heads of special form
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Description

陶瓷晶圓片及其製造方法
本發明係提供一種陶瓷晶圓片之製造方法，特別係使用陶瓷顆粒之材質包含氮化物陶瓷粉末、氧化物陶瓷粉末、及碳化物陶瓷粉末所組成之群組，製造該陶瓷晶圓片，可應用於半導體製程程序所需、電子產品及半導體設備。
半導體為電子產業不可或缺的一環，半導體製造即所謂的晶圓加工，包含上游產業的晶圓製造、產品設計(IC design)及光罩，下游產業的IC封裝、測試、包裝及週邊的導線架製造、連接器製造及電路板製造等。其中，晶圓製造係半導體製程之初始階段，係為半導體產業的根基，而一般晶圓製造方法，係將矽砂拉製提煉、溶解、純化、蒸餾一系列措施之後製成單晶矽棒，將單晶矽棒經過切片、拋光後得到晶圓片。
陶瓷為一種具有高硬度、高熔點、化學穩定性的材料，被廣泛用於生活中，例如地磚、日用碗盤等。近年，更陸續研發出許多「精密陶瓷」，不同於傳統陶瓷，精密陶瓷係是一種以精製的高純度無機材料為原料，由化學或物理方式控制組成及均勻度，並以乾式壓製、鑄漿、或射出成形等方法成形後，經過燒結步驟加工製成的成品，具有耐酸、耐鹼、堅硬、耐磨、耐壓、耐高熱等的特性，可用於各種領域，例如電子陶瓷、結 構陶瓷、及生醫陶瓷。
本案發明人發現，由於陶瓷的介電常數低，並具有絕緣性、熱導率高、耐熱性及散熱性佳之特點，可在高濕度及溫度下，仍有穩定性能。因此，適於作為半導體之封裝晶圓。
鑒於上述陶瓷晶圓之優勢，本發明欲提供一種陶瓷晶圓片及其製造方法，以製備可用於得半導體製程程序所需之陶瓷晶圓片，且製造方法中包含形成定位槽口或定位平邊於該陶瓷晶圓片，可減少加工不良的狀況，提高良率。
即，本發明之目的在於提供一種陶瓷晶圓片之製造方法，包含下列步驟：(a)成型步驟：將一陶瓷顆粒經由模具內抽真空、常壓或壓力氣體，以機械或油壓做高壓成型，並進一步以等向水壓、油壓或氣壓做均壓處理，形成一陶瓷生胚；(b)溫控步驟：將該陶瓷生胚進行以氣氛、真空、氧氣或大氣下脫脂及在常壓或高壓下以氣氛、真空、氧氣或大氣燒結處理，形成一陶瓷塊材；(c)研磨步驟：將該陶瓷塊材經外徑研磨後，形成一精密陶瓷塊材，此陶瓷經精密加工後可用於半導體設備承載盤；及(d)加工步驟：將該精密陶瓷塊材上形成定位槽口或定位平邊，經多線切割為晶片薄板，並經研磨平面及周圍導角後拋光，獲得該陶瓷晶圓片。
本發明之另一目的在於提供一種陶瓷晶圓片之製造方法，包含下列步驟：(a)成型步驟：將一陶瓷顆粒結合樹脂與分散劑以刮刀塗覆方式形成一陶瓷片材；及(b)加工步驟：將該陶瓷片材上經外圍尺寸切割為晶片薄板，並加工形成定位槽口或定位平邊，並經研磨平面及周圍導角後拋 光，獲得該陶瓷晶圓片。
於一較佳實施例中，該陶瓷顆粒之材質選自由氮化物陶瓷粉末、氧化物陶瓷粉末及碳化物陶瓷粉末所組成之群組，並經造粒而得。
於一較佳實施例中，該氮化物陶瓷粉末係將一金屬氧化物或一純金屬粉體，以混合含氮、碳、氫原子之有機膠材並造粒，經真空、常壓或壓力於氮、碳、氫原子氣體氣氛環境下高溫碳熱還原之後，再於大氣或氧氣環境下高溫除碳後造粒所得。
於一較佳實施例中，該碳化物陶瓷粉體係將一金屬氧化物或一純金屬粉體，以混合含氬、碳、氫原子之有機膠材並造粒，經真空、常壓或壓力於氬、碳、氫原子氣體氣氛環境下高溫碳化後造粒所得。
於一較佳實施例中，該氧化物陶瓷粉末係將一金屬氧化物或一純金屬粉體經造粒所得。
於一較佳實施例中，該造粒時添加一助燒結劑及/或一黏結劑與分散劑。
於一較佳實施例中，該機械或油壓做高壓成型係在高壓機械壓力之壓力噸數為10噸~1000噸及模內壓力為-0.063atm~100atm所完成，而該等向水壓、油壓、或氣壓做均壓處理係在等向高壓壓力為100atm~8000atm及溫度為10℃~100℃所完成。
於一較佳實施例中，該研磨可為乾式或濕式與單向或雙向，且該拋光可為乾式或濕式與單面拋光或雙面拋光。
本發明之另一目的在於提供一種陶瓷晶圓，其包含如上述之陶瓷晶圓片之製造方法所製得之陶瓷晶圓片，可應用於半導體構裝製程程 序、電子產品及半導體設備所需，而可作為電子產品。
由本發明陶瓷晶圓片之製造方法所製得之陶瓷晶圓片，其介電常數低；具絕緣性；且熱傳導快，因此散熱佳，即適於作為半導體構裝用片，並用於製造電子產品。又，陶瓷晶圓具有良好加工性，可使製造出的晶圓尺寸有高的精密度，容易實現多層結構化，且具有光滑的表面，即在作為晶圓片之時，並不會有翹曲、彎曲、或龜裂等情況產生，亦可用於高精度半導體設備承載盤。
圖1為本發明之其一陶瓷晶圓片之製造方法流程圖。
圖2為本發明之其二陶瓷晶圓片之製造方法流程圖。
圖3為本發明之氮化物陶瓷粉末之製造方法流程圖。
圖4為本發明之碳化物陶瓷粉末之製造方法流程圖。
圖5為本發明之氧化物陶瓷粉末之製造方法流程圖。
請參閱圖1，係本發明提供一種陶瓷晶圓片之製造方法，包含下列步驟：(a)成型步驟：將一陶瓷顆粒經由模具內抽真空、常壓或通入高壓氣體，以機械或油壓做高壓成型，並進一步以等向水壓、油壓、或氣壓做均壓處理，形成一陶瓷生胚；(b)溫控步驟：將該陶瓷生胚在氣氛、真空、氧氣或大氣進行脫脂及在常壓或高壓以氣氛、真空、氧氣或大氣下燒結處理，形成一陶瓷塊材；(c)研磨步驟：將該陶瓷塊材經外徑研磨後，形成一精密陶瓷塊材；及(d)加工步驟：將該精密陶瓷塊材上形成定位槽口或定位平邊，經多線切割為晶片薄板，並經研磨平面及周圍導角後拋光，獲 得該陶瓷晶圓片。
上述(a)成型步驟中，將該模具內抽真空、常壓或通入壓力氣體成型，可降低陶瓷晶圓片的孔洞，並使缺陷減少；而該機械或油壓做高壓成型係在高壓機械壓力之壓力噸數力為10噸~1000噸及模內壓力為-0.063atm~100atm所完成，該壓力噸數力例如10噸、50噸、100噸、150噸、200噸、250噸、300噸、350噸、400噸、450噸、500噸、550噸、600噸、650噸、700噸、750噸、800噸、850噸、900噸、950噸、1000噸等，該模內壓力例如-0.063atm、1atm、5atm、10atm、20atm、30atm、40atm、50atm、60atm、70atm、80atm、90atm、100atm等；高壓成形後，進一步以等向水壓、油壓、或氣壓做均壓處理，使壓胚之密度均一，獲得均質壓胚；該等向高壓壓力為1000atm~8000atm及該溫度為10℃~100℃所完成，該高壓壓力例如1000atm、2000atm、3000atm、4000atm、5000atm、6000atm、7000atm、8000atm等，該溫度例如10℃、20℃、30℃、40℃、50℃、60℃、70℃、80℃、90℃、100℃等。
上述(b)溫控步驟中，包含一脫脂過程；脫脂係通過加熱及其它物理方法將生胚內之有機物排除，可採用傳統的熱脫脂、溶劑脫脂、催化脫脂以及水基萃取脫脂，較佳為採用熱脫脂，其溫度為200℃~900℃，例如200℃、250℃、300℃、350℃、400℃、450℃、500℃、550℃、600℃、650℃、700℃、750℃、800℃、850℃、900℃等，且係在有氫、氮、氧、氬或空氣之環境下進行，此脫脂步驟可將陶瓷顆粒中的黏結劑去除；上述(b)溫控步驟，進一步包含於真空、常壓或高壓下的燒結處理過程，燒結處理係於高溫下進行，高溫係為1000℃~3000℃，例如1000℃、1200℃、1500℃、 2000℃、2500℃、3000℃等，且係在有氫、氮、氬、氧、碳、或空氣之環境若原料為氮化物陶瓷粉末，則於氫、氮、氬氣環境下進行；若原料氧化物陶瓷粉末，則於空氣、氬、氫或氧氣環境下進行；若原料為碳化物陶瓷粉末，則於氬、氫及碳之環境下進行，其碳源可採用氣體碳源及固體碳源)，及大氣壓力為-0.063atm~6000atm下進行，例如-0.063atm、0atm、1atm、100atm、500atm、1000atm、1500atm、2000atm、3000atm、4000atm、5000atm、6000atm等。
上述(c)研磨步驟可直接將該陶瓷塊材製備成作為半導體設備陶瓷承載盤所需大小的外徑規格，因半導體設備而異，有不同大小的外徑，例如2吋、4吋、4.5吋、6吋、8吋、10吋、12吋或18吋之圓形、方形或長方形或特殊規格形狀與尺寸。
上述(d)加工步驟可使用研磨(如採用砂漿或鑽石研磨盤)或車削方式，形成該定位槽口或定位平邊。定位槽口或定位平邊可使該陶瓷晶圓片在半導體製程中，對準位置更為精準，提升良率。
圖2係本發明之另一目的在於提供一種陶瓷晶圓片之製造方法，包含下列步驟：(a)成型步驟：將一陶瓷顆粒結合樹脂及分散劑，以刮刀塗覆方式形成一陶瓷片材；及(b)加工步驟：可將該陶瓷片材經外圍尺寸切割成晶片薄板，並加工形成定位槽口、或定位平邊，並經研磨平面及周圍導角後拋光，獲得該陶瓷晶圓，此陶瓷晶圓片可為18吋、12吋、10吋、8吋、6吋、4.5吋、4吋、2吋之圓形、方形或長方形或特殊規格形狀與尺寸。
上述(a)成型步驟中，該樹脂包含聚乙烯醇縮丁醛(PVB)、聚 乙烯醇(PVA)、聚乙二醇、乙基纖維素、聚丙酮、低烷基丙烯酸酯共聚物、甲基丙烯酸酯任一者或其等之組合，而該樹脂的添加量佔該陶瓷片材之重量百分比為0.1wt%~10wt%，例如0.1wt%、1wt%、3wt%、5wt%、7wt%、10wt%等；該分散劑為有機溶劑，其包含甲醇、乙醇(95%)、正丁醇、戊醇、甲苯乙醇(95%)、雙丙酮醇等之醇類；丙酮、甲基乙基酮、戊酮、甲基異丁酮、環己酮等之酮類，醋酸甲酯、乙酸乙酯(85%)、乙酸丁酯、醋酸異戊酯、磷酸三丁酯等之酯類，醋酸等之羧酸類，四氯化碳、二氯丙烷等之為鹵素取代的烴類，甲苯、1,4-二氧陸圜、及甲基溶纖劑、乙基溶纖劑任一者或其等之組合；進一步地，可添加塑化劑以降低樹脂之轉移溫度，使陶瓷晶圓片具有撓屈性，塑化劑包含鄰苯二甲酸二丁酯、酸鹽、磷酸鹽、醇迷類、單甘油酸酯、礦物油、多元酯、松香衍生物、沙巴鹽類、檸檬酸鹽類、聚乙二醇、酞酸二辛酯、脂肪酸、多元醇、脂肪酸脂、檸檬酸脂、聚酯增塑劑或環氧增塑劑任一者或其等之組合，而該塑化劑的添加量佔該陶瓷片材之重量百分比為0.1wt%~10wt%之間，例如0.1wt%、1wt%、3wt%、5wt%、7wt%、10wt%等。
上述(d)加工步驟可使用研磨或雷射的方式，形成該定位槽口或定位平邊。定位槽口或定位平邊可使該陶瓷晶圓片在半導體製程中，即對準位置更為精準，提升良率。
上述之陶瓷顆粒之材質選自氮化物陶瓷粉末、氧化物陶瓷粉末及碳化物陶瓷粉末所組成之群組，並經粉體造粒而得。其中，粉體造粒所得之粒徑大小為30um~200um，例如30um、40um、50um、60um、70um、80um、90um、100um、110um、120um、130um、140um、150um、160um、 170um、180um、190um、200um。
請參閱圖3，係上述之氮化物陶瓷粉末之製造方法，其係將一金屬氧化物、或一純金屬粉體，以混合含氮、碳、氫原子之有機膠材並造粒，經真空、常壓或壓力於氮、碳(碳源可為固體與氣體或原子)、氫原子氣體氣氛環境下高溫碳熱還原之後，此氣氛環境可為靜止或旋轉環境，再於大氣或氧氣環境下高溫除碳後造粒所得，此大氣或氧氣環境為靜止或旋轉環境。而該含氮、碳、氫原子之有機膠材包含酚醛樹脂、聚丙烯腈、ABS樹脂、丁苯橡膠或碳粉任一者或其等之組合，且以酚醛樹脂為佳。經造粒後，該高溫碳熱還原可將金屬氧化物之氧原子與碳原子形成一氧化碳或二氧化碳，其氧原子空位與氮原子互換，形成金屬氮化物，使該還原金屬，其係在氫、氮、碳氣體氣氛環境，壓力為-0.013atm~6000atm及高溫溫度為600℃~3000℃下所完成，該壓力例如-0.063atm、1atm、100atm、500atm、1000atm、1500atm、2000atm、3000atm、4000atm、5000atm、6000atm等，該高溫溫度例如600℃、700℃、800℃、900℃、1000℃、1100℃、1200℃、1600℃、2000℃等。該高溫除碳可將該霧化造粒及高溫碳還原過程中可能產生不必要的碳或碳化物除去，其係在氮、氧之氣體氣氛環境下，溫度為200℃~900℃下所完成，該溫度例如200℃、300℃、400℃、500℃、600℃、700℃、800℃、900℃等。
請參閱圖4，係上述之碳化物陶瓷粉體之製造方法，其係將一金屬氧化物或一純金屬粉體，以混合含氬、碳、氫原子之有機膠材並造粒，經真空、常壓或壓力於氬、碳、氫原子氣體氣氛環境下高溫碳化後造粒所得，此環境為靜止或旋轉環境。而該含氮、碳、氫原子之有機膠材包 含酚醛樹脂、聚丙烯腈、ABS樹脂、丁苯橡膠任一者或其等之組合，且以酚醛樹脂為佳。其中，該高溫碳化可將金屬氧化物或純金屬反應成碳化物，其係在氫、氬、碳、或氫之氣體氣氛環境下，壓力為-0.013atm~6000atm，溫度為600℃~3000℃下所完成，該壓力例如-0.063atm、1atm、100atm、500atm、1000atm、1500atm、2000atm、3000atm、4000atm、5000atm、6000atm等，該溫度例如600℃、1000℃、1500℃、2000℃、2500℃、3000℃等。
請參閱圖5，係上述之氧化物陶瓷粉末之製造方法，其係將一金屬氧化物或一純金屬粉體經造粒所得。
上述之金屬氧化物包含氧化鋁、氧化鈣、氧化鎂、氧化鋯、氧化鈦、氧化釔任一者或其等之群組。
上述之純金屬粉體包含銅、銀、金、鉑、銀-鈀合金、鋁、鈦、釩、鉻、鐵、鈷、鎳、銅、鋅、鎵、鉑、鈀、鎢、釕任一者或其等之群組。
上述之造粒係添加一助燒結劑及/或一黏結劑與分散劑。其中，該造粒之方法包含粉體造粒、霧化造粒、噴霧造粒、攪拌滾動/混合造粒、壓力成形造粒、燒結成型造粒等，以粉體造粒、霧化造粒及噴霧造粒為較佳，更以粉體造粒為最佳。其中，該助燒結劑包含氧化物或氮化物，該氧化物包含氧化鎂、氧化鋯、氧化鈣、氧化錸、氧化釔、氧化矽、硼、碳任一者或其等之組合，該氮化物包含氮化鋁、氮化硼任一者或其等之組合，且該助燒結劑中更可包含有鈰、銪、鉺、釹、鋱、釤、銩、鏑、釔、釓、鐠、鑥、鈥、鉕、鑭、鐿之金屬，該助燒結劑佔該陶瓷粉末之粉末重量為0wt~20wt%之間，例如0wt%、0.5%、1wt%、1.5%、2wt%等；而該黏 結劑包含聚乙烯醇縮丁醛(PVB)、聚乙二醇、阿拉伯樹膠、海藻酸胺、甲基纖維素、烯甲基纖維素、乙烯纖維素、烴乙基纖維素、甲基丙烯酸胺、亞甲基雙丙烯醯胺、聚氧乙烯任一者或其等之組合，該黏結劑佔該陶瓷粉末之粉末重量為0.1wt%~20wt%之間，例如0.1wt%、1wt%、3wt%、5wt%、7wt%、10wt%等；該分散劑包含聚丙烯酸、聚丙烯、聚丙烯胺、聚乙烯、聚乙二烯、聚乙二醇、阿拉伯樹膠、明膠、魚油、飛魚油、油酸、蓖麻油任一者或其等組合，該分散劑佔該陶瓷粉末之粉末重量為0.1wt%~20wt%之間，例如0.1wt%、1wt%、2wt%、3wt%、4wt%、5wt%、10wt%、20wt%等。
上述之研磨可為乾式或濕式與單向或雙向，且該拋光可為乾式或濕式與單面拋光或雙面拋光。若為單向研磨之時，可將陶瓷晶圓背貼UV膠、熱熔膠或塗佈膠材，以增加其均勻性。
本發明之陶瓷之陶瓷晶圓之熱傳導係數為100W/mk~250W/mk，例如100W/mk、150W/mk、200W/mk、250W/mk；熱膨脹係數為1~10(10-6/k)，例如1(10-6/k)、3(10-6/k)、5(10-6/k)、8(10-6/k)、10(10-6/k)、13(10-6/k)、15(10-6/k)、18(10-6/k)、20(10-6/k)，因此，容易散熱且不因熱而膨脹；而介電常數為1~100(1MHz)，例如1(1MHz)、3(1MHz)、5(1MHz)、8(1MHz)、10(1MHz)、20(1MHz)、30(1MHz)、40(1MHz)、50(1MHz)、60(1MHz)、70(1MHz)、80(1MHz)、90(1MHz)、100(1MHz)，因此具有絕緣的效果；而彎取強度為100~2000Mpa，具高機械強度，例如100Mpa、250Mpa、500Mpa、750Mpa、1000Mpa、1250Mpa、1500Mpa、1750Mpa、2000Mpa。
本發明之陶瓷晶圓片之製造方法所得之陶瓷晶圓片，此陶瓷 晶圓片可為18吋、12吋、10吋、8吋、6吋、4.5吋、4吋、2吋之圓形、方形或長方形或特殊規格形狀與尺寸，具有絕緣、散熱、介電係數低之優勢，低經過後端半導體加工程序，光罩、蝕刻、封裝、及測試後，便可用於電子產業或半導體產業，諸如三維電路封裝、功率半導體元件封裝、電路製造等。
具體實施例
製備例1-製備氮化物陶瓷粉末
將1kg氧化鋁、1kg純鋁粉體及酚醛樹酯經球磨混合酚醛樹酯與碳粉造粒後，將粒子移置高溫爐於1atm及1600℃並通入乙炔、氮氣、氫氣進行高溫碳熱還原反應20小時，將還原後的粒子置於大氣環境下，以600℃ 24小時進行除碳後，以球磨混入20g氧化釔做助燒結劑及50g聚乙烯醇縮丁醛(PVB)做黏結劑，使用大川原噴霧造粒機進行造粒得到粒徑為60~90um大小與1.1kg氮化物陶瓷粉末。
製備例2-製備碳化物陶瓷粉末
將1kg氧化矽粉體及200g酚醛樹酯經球磨混合酚醛樹酯與碳粉造粒後，將粒子移置高溫爐於1atm及2000℃並通入氫氣與氬氣進行以20小時高溫碳碳化，混入氧化鋁粉與硼粉做助燒結劑及酚醛樹酯做黏結劑，大川原噴霧造粒機進行造粒得到粒徑為60~90um大小與1.2kg碳化矽陶瓷粉末。
製備例3-製備氧化物陶瓷粉末
將1kg氧化鋯粉體及20g的聚乙烯醇(PVA)混合50g氧化釔 經球磨混合造粒後得到粒徑為60~90um大小900g的氧化物陶瓷粉末。
實施例1-陶瓷晶圓片之製造方法1
此製造方法1流程如圖1所示，將上述製備例1至3所得之1kg氮化物陶瓷粉末、1kg碳化物陶瓷粉末及1kg氧化物陶瓷粉末分別製作不同材質晶圓，並使用油壓機在真空下，以壓力200噸及模內壓力-0.03atm做高壓成型，並使用EPSI之水壓機以3000atm壓力等向壓力及30℃下做等壓處理，形成陶瓷生胚；將該陶瓷生胚移置大氣下600℃下脫脂進行後，經由島津高溫爐進行燒結於10atm及溫度分別為1800℃、2100℃與1500℃做燒結處理，形成陶瓷塊材；將該陶瓷塊材移置平面與成型研磨機做定位槽口或定位邊下，做出一定位槽口後，使用多線切割為8吋圓形晶片薄板，並經雙向研磨機台進行濕式將雙面研磨平面再經單向減薄機減薄至所需尺寸及周圍導角後，使用單向拋光機台乾式雙面拋光，獲得陶瓷晶圓片。
實施例2-陶瓷晶圓片之製造方法2
此製造方法2流程圖如圖2所示，將上述製備例1至3所得之3kg氮化物陶瓷粉末、3kg碳化物陶瓷粉末及3kg氧化物陶瓷粉末分別製作不同材質晶圓，再加入10%聚乙烯醇縮丁醛(PVB)樹脂、1%分散劑以刮刀塗覆，刮刀塗覆後以10分鐘60℃乾燥形成片材，形成陶瓷片材；將該陶瓷片材移置雷射機台做定位槽口或定位邊下，做出一定位槽口後，雷射切割為8吋圓形晶片薄板，並經雙向研磨機台進行濕式將雙面研磨平面再經單向減薄機減薄至所需尺寸及周圍導角後，使用單向拋光機台乾式雙面拋光，獲得陶瓷晶圓片。
實施例3陶瓷晶圓片性能測試
將實施例1及2製造之陶瓷晶圓片、及晶圓片(對照組)做性能測試，測試項目包含熱傳導測試、彎曲強度測試、熱膨脹測試、及介電常數測試，測試結果別如表一所示。使用本發明之製造方法所得之陶瓷矽晶圓片相較於晶圓片，具有熱傳導係數較高、彎曲強度較強、及介電常數較低等優異特性，因此利於作為半導體之晶圓。

Claims (10)

  1. 一種陶瓷晶圓片之製造方法，包含下列步驟：(a)成型步驟：將一陶瓷顆粒經由模具內抽真空、常壓或壓力氣體，以機械或油壓做高壓成型，並進一步以等向水壓、油壓或氣壓做均壓處理，形成一陶瓷生胚；(b)溫控步驟：將該陶瓷生胚進行脫脂及在常壓或高壓下燒結處理，形成一陶瓷塊材；(c)研磨步驟：將該陶瓷塊材經外徑研磨後，形成一精密陶瓷塊材；及(d)加工步驟：將該精密陶瓷塊材上形成定位槽口或定位平邊，經多線切割為晶片薄板，並經研磨平面及周圍導角後拋光，獲得該陶瓷晶圓片。
  2. 一種陶瓷晶圓片之製造方法，包含下列步驟：(a)成型步驟：將一陶瓷顆粒結合樹脂與分散劑以刮刀塗覆方式形成一陶瓷片材；及(b)加工步驟：將該陶瓷片材上經外圍尺寸切割為晶片薄板，並加工形成定位槽口或定位平邊，並經研磨平面及周圍導角後拋光，獲得該陶瓷晶圓片。
  3. 如請求項1或2之製造方法，其中該陶瓷顆粒之材質選自由氮化物陶瓷粉末、氧化物陶瓷粉末及碳化物陶瓷粉末所組成之群組，並經造粒而得。
  4. 如請求項3之製造方法，其中該氮化物陶瓷粉末係將一金屬氧化物或一純金屬粉體，以混合含氮、碳、氫原子之有機膠材並造粒，經真空、常壓或壓力於氮、碳、氫原子氣體氣氛環境下高溫碳熱還原後，再於大氣環境下高溫除碳後造粒所得。
  5. 如請求項3之製造方法，其中該碳化物陶瓷粉體係將一金屬氧化物或一純金屬粉體，以混合含氬、碳、氫原子之有機膠材並造粒，經真空、常壓或壓力於氬、碳、氫原子氣體氣氛環境下高溫碳化後造粒所得。
  6. 如請求項3之製造方法，其中該氧化物陶瓷粉末係將一金屬氧化物或一純金屬粉體經造粒所得。
  7. 如請求項3之製造方法，其中該造粒時添加一助燒結劑及/或一黏結劑與分散劑。
  8. 如請求項1項之製造方法，其中該機械或油壓做高壓成型係在高壓機械壓力之壓力噸數為10噸~1000噸及模內壓力為-0.063atm~100atm所完成，而該等向水壓、油壓或氣壓做均壓處理係在等向高壓壓力為100atm~8000atm及溫度為10℃~100℃所完成。
  9. 如請求項1或2之製造方法，其中該研磨可為乾式或濕式與單向或雙向，且該拋光可為乾式或濕式與單面拋光或雙面拋光。
  10. 一種陶瓷晶圓，其包含如請求項1或2之陶瓷晶圓片之製造方法所製得之陶瓷晶圓片。
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