TW200916262A - Contoured cmp pad dresser and associated methods - Google Patents
Contoured cmp pad dresser and associated methods Download PDFInfo
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- TW200916262A TW200916262A TW97112737A TW97112737A TW200916262A TW 200916262 A TW200916262 A TW 200916262A TW 97112737 A TW97112737 A TW 97112737A TW 97112737 A TW97112737 A TW 97112737A TW 200916262 A TW200916262 A TW 200916262A
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- abrasive
- cmp
- dresser
- pad
- substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
200916262 九、發明說明: 【發明所屬之技術領域】 本發明係關於-種修整或調節化學機械研磨塾的裝置 及方法,本發明係與化學及材料領域相關。 【先前技術】 現今卉多產業均利用化學機械研磨(CMp )製程來研 磨特定工件,尤其是在電腦製造業,近年來該產業在針對 =陶竞晶圓、矽晶圓、玻璃晶圓、石英晶圓、及金屬晶圓 等進行研磨時’越來越倚重CMP製程,該等製程中一般 係將:圓β又於疑轉墊上’該旋轉墊係以耐久的有機機板(例 如聚虱脂)所製成’並施加具有破壞晶圓基板之化學能力 的化學研磨漿於該塾體上,並施加能對晶圓表面產生物理200916262 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to apparatus and methods for conditioning or conditioning chemical mechanical polishing imperfections, and the present invention relates to the fields of chemistry and materials. [Prior Art] Nowadays, the Huidu industry uses the chemical mechanical polishing (CMp) process to grind specific workpieces, especially in the computer manufacturing industry. In recent years, the industry is targeting = Tao Jing wafers, silicon wafers, glass wafers, quartz wafers. And when grinding metal wafers, etc. 'more and more reliance on CMP process, these processes generally will: round β and on the suspected pad'. The rotating pad is made of durable organic machine board (such as polyester) Fabricating and applying a chemical slurry having the chemical ability to damage the wafer substrate to the body and applying physics to the surface of the wafer
破壞的磨粒’持續的將化學研磨毁施加於旋轉中的CMP 塾上’則使得化學及機械力持需施加於晶圓上,而令其在 所欲之模式下加以研磨。 要維持研磨品質,最重要的是要考量磨粒於研磨塾上 的分佈情形,塾的頂部通常以纖維、小細孔以提供足夠的 摩擦力,則當研磨塾在旋轉時,足夠的摩擦力可防止磨粒 因離心力而脫離研磨塾,因此’重要的是要盡可能的維持 研磨墊頂部的彈性、以及盡可能的使纖維直立、並確保研 磨墊頂部有充足的開孔及小細孔以容納新的磨粒。 維持研磨塾頂部的困難點,在於工件' 研磨漿、及修 整盤所產生的累積研磨殘留物’該等累積物使得研磨塾頂 部變的光滑或硬化,並使得纖維向下纏結,因而使得研磨 200916262 墊’’、、法抓持研磨漿中的磨粒,則明顯降低研磨墊的研磨成 果’再者’許多研磨墊中用以抓持研磨漿的小細孔係容易 被者塞&研磨墊之研磨表面整體的粗糙度將變的較差且 被纖維所覆蓋’因此’藉由各式各樣的裝置 切削,,的方彳,-Γ -甚^ ^可還原研磨墊頂部,該過程稱之為,,修整,,咬” 調節”咖研磨塾,該目的可使用許多種裝置及製程/完 成之,其中一梦 ¥ 曰甘 、 疋/、上具有複數個超硬結晶磨粒的盤 體例如依附在一平面或一基板的鑽石磨粒。 然而’《先前技術製成的研磨盤具有複數個缺點,首 先’磨粒可能脫離盤體的基板且落入c :’而造成該研磨工件被摩擦而受損,其次,先前技= 衣程傾向於在基板的表面上成型叢集為不均勻間隔的磨 粒》亥不均勻間隔的磨粒,會造成研磨塾部分區域過度加 工而形成磨損記號’並造成CMP研磨塾部分區域加工不 士而形成平滑層,再者’該盤體的磨粒並非用來於研磨墊 貝穿成里tH均勻的深度,該非均勻深度造成研磨 墊上額外不平坦的加工’最後’依據CMp研磨墊可變形 :角度,則會因為修整器施加的下壓力,而使修整器起始 導引邊緣前端膨脹或钯、、由,# 3 /之·泡 *通過修整器上維持原狀的部 位通過研料時,該料處會使研《上形成凹處,其依 、、成本持原狀的磨粒(特別是位於修整器中央的磨粒), 以較淺的深度穿過研磨塾,或甚至完全略過研磨塾,該施 力於研磨墊磨粒上不均勻的加工,使得研磨墊非均勻的被 加工’且同時造成修整H不均勾的磨損,而被提早耗盡。 200916262 又現有技術的CMP研磨墊修整器具有其他缺點,現 有技術的CMP研磨墊修整器減少研磨墊調節器(c〇nditi〇ner) 的使用哥命,CMP研磨墊調節器的有效壽命,取決於加工 磨粒的數目,及每一磨粒之加工數的總和,如前所述,研 磨塾。周節器的壽命因超級磨粒(superabrasive叫仏⑷所施 加之非均勻加工而減少,當可變形的CMP研磨墊受其修 整益過大的壓力下壓時,會使研磨墊調節器之導引邊緣的 、’B曰體因承焚主要的負載,而導致磨損,此外,位於中 央的磨粒會避免承受相同的負載,該不當的負載增加導引 邊緣之磨粒的磨耗逮率’且造成修整器在中央的磨粒耗盡 前即無法使用。 ’有兩因素造成先前技術之磨粒脫 磨粒以較差的方法依附於盤體上, 關於磨粒的留滯力 離修整器盤體,首先, 磨粒以㈣或其他钱㈣依附於基板上,則該磨粒僅以 微弱的機械力,而未以任何形式的化學鍵結力依附於基板 上二因此,該磨粒容易因受到如摩擦力等較強的機械力而 脫落再者,化學研磨液的電鍍材料會促進磨粒脫落。 1心相反的,當磨粒焊固於基板上時,化學鍵結力使磨粒 权U的固&於其上,’然而,化學研磨液中的酸性物質可 决速的減弱焊固磨粒的化學鍵結力,而使磨粒受研磨墊加 工的摩t力而脫落,因此,《了減少焊接處與化學物質的 接觸’並為了延長修整器的使用壽命,當加工開始時,研 磨製程必須終止,如此則使得研磨和加X·不能同時進行, 而浪費加工時間,且為缺乏效率的。 200916262 在焊接過程中,修整琴之工竹 I正窃I丄彳乍表面的彎曲也會造成磨 粒脫落,進行焊接過程時,佟瞽 士、 裎f乜正窃必須暴露於高溫環境下, 南溫造成修整器之工你矣而變Λ U作表面相,因此損tnnu作 表面的平滑度和平面性,丨·民蛀 卞曲ί生則坏接祁位會變的粗糙且具有高 低的斑點,該斑點為不良的,因 — 比J U马δ亥斑點會造成焊接處剝 洛,且在工件之研磨表面上形成微小的刮傷“匕外,該不 平整:影響修整器之後的製程,且影響磨粒的停滯力。 /綜上所述,—CMP研磨墊修整器應追求以最佳效率 及咢求延續壽命而能達成最佳的加工結果。 【發明内容】 於是,本發明提供一方法及—CMP研磨墊修整器的 結構:以增加對於CMp研磨墊加工時中央超級磨粒的負 載以本發明的方法,CMp研磨墊修整器上每一最佳磨粒 成對的叹狖基板上’並依據預設的圖樣設置於特定的區域 上’該超級磨粒可形成-圖樣,該圖樣減少位S CMP研 磨塾修整H之外圍磨粒的穿透力,且增加位於⑽研磨 墊修整器之中央磨粒的穿透力,目此最佳的負載位於中央 超級磨粒,一 而+ J.J. . 叙而5 ’该磨粒由超硬的基材組成,例如鑽 石、或立方氮化删所組成,其為單晶體或多晶體的形式β 在本發明的其中一實施例中,用以增加位於中央之超 及磨粒的負載方法,包含使用-CMP研磨墊修整器,該 =正时之基板上設有建構為—圓樣的超級磨粒,該圖樣提 :、位於外圍之磨粒漸向上傾斜至位於中央之磨,粒,此外, §斜面的a際角度可控制位於中央之磨粒的負載,該斜面 200916262 可以多種方式形成,例如將超級磨粒排列於大致平坦的基 :反上或其内,在此情形下,超級磨粒由外圍自中央增加: 反上工作表面的高度,在某些情形下,斜面的最佳角度可 由測量研磨墊的速率及彈性而得知。 在本發明之另-實施例中,用以增加位於中央之超級 的負载方法,包含使用一 CMp研磨墊修整器,該修 整益之基板上設有以一圖樣成對建構的超級磨粒,該圖樣 二卜圍的超級磨粒較中央的超級磨粒為密集,當磨粒以較 '”、在集的叢集成型時’該磨粒無法如同磨粒較為分散的磨 粒:般深入貫穿研磨塾,因此,藉由改變磨粒位於基板上 的雄、度’以將負載自一區塊轉移至另一區塊。 在本發明又一實施例中,用以增加位於中央之超級磨 粒的負載方法’是藉由將位於中央的磨粒定位於一特定形 態(attltude),相較於位於外圍磨粒的形態而言,提供位於 中央的磨粒具有對CMP研磨塾較大的穿透力,在盆中一 貫施方式中,該位於中央磨粒的形態呈現出具有尖端的工 ^端點^該位於外圍磨粒的形態呈現出具有平面或種線 的工作點,在另一實·絲方*4’占 式中’該位於中央磨粒的形態 呈現出具有稜線的工作端點’而該位於外圍磨粒的形態呈 現出具有平面的工作端點,在又一實施方式中,該位於中 央磨粒的形態呈現出具有尖端的工作端點 粒的形態呈現出具有平面的工作端 外圍磨 1 F ?而點,且介於兩者之間磨 粒的形悲呈現出具有稜線的工作端點。 除了上述的使用方法外,本發明亦包含製造CM?研 200916262 磨墊修整器的方法,該CMP研磨墊修整器用以增加位於 中央之超級磨粒的負載,一般而言,該方法包含以下步驟: 1 ·準備一基板;2 ·將複數個超級磨粒以一圖樣依附於該基 板上’該圖樣減少外圍磨粒對CMP研磨塾的穿透力,且 該圖樣增加中央磨粒對CMP研磨墊的穿透力。 藉由上述的方法,CMP研磨墊修整器具有相當多的優 點,舉例而言,CMP研磨墊修整器的工作平面建構為用以 增加修整器之中央部位的接觸,而不是在外側或,,導引邊緣,’ 過度接觸,增加中央位置的接觸,將負載由修整器的外圍 區域轉移至修整器的中央區域,因此延長了修整器的使用 可卩並使修整器更有效的切入並修整CMP研磨塾,本 發明包含了結合此等構造的CMp研磨墊修整器,包括該 支持上述方法的特殊構造。 前述之本發明的特徵及優點,將會詳細的於以下實施 方式配合圖式加以說明。 【實施方式】 研磨墊修整器及其相關The broken abrasive particles 'continuously apply chemical polishing to the rotating CMP ’' allows chemical and mechanical forces to be applied to the wafer and allowed to be ground in the desired mode. In order to maintain the quality of the grinding, the most important thing is to consider the distribution of the abrasive particles on the grinding crucible. The top of the crucible is usually made of fibers and small pores to provide sufficient friction. When the grinding crucible is rotating, sufficient friction is required. It prevents the abrasive particles from coming off the grinding crucible due to centrifugal force. Therefore, it is important to maintain the elasticity of the top of the polishing pad as much as possible, and to make the fiber stand upright as much as possible, and to ensure that there are sufficient openings and small holes at the top of the polishing pad. Contains new abrasive particles. The difficulty in maintaining the top of the grinding crucible lies in the fact that the workpiece 'grinding slurry, and the cumulative grinding residue generated by the conditioning disc' causes the top of the grinding crucible to become smooth or hardened, and the fibers are entangled downward, thus causing grinding 200916262 The pad'', the method of grasping the abrasive grains in the slurry, significantly reduces the grinding results of the polishing pad. 'Furthermore', many small holes in the polishing pad used to hold the slurry are easy to be stoppered & The overall roughness of the abrasive surface of the mat will become poorer and covered by the fibers 'so that's cut by a variety of devices, the square, - Γ - ^ ^ ^ can restore the top of the polishing pad, the process is called For this, trimming, biting, "adjusting" coffee grinding, this purpose can be used in a variety of devices and processes / completion, one of the dreams, 曰 、, 疋 /, the disk with a plurality of super hard crystal abrasive grains For example, diamond abrasive particles attached to a flat surface or a substrate. However, "the prior art grinding disc has a number of disadvantages. Firstly, the abrasive particles may be separated from the substrate of the disc and fall into c:', causing the abrasive workpiece to be damaged by friction. Secondly, the prior art = garment tendency On the surface of the substrate, the abrasive particles which are unevenly spaced at the surface of the substrate are formed, and the abrasive grains which are unevenly spaced apart may cause excessive processing of the abrasive enamel region to form the wear mark 'and cause the CMP to be partially polished and smooth. The layer, in addition, the abrasive grain of the disk is not used to penetrate the pad to form a uniform depth of tH, which causes additional uneven processing on the polishing pad. 'Final' can be deformed according to the CMp polishing pad: angle, then Due to the downward pressure exerted by the dresser, the front end of the trimming guide edge is swollen or the palladium, and the #3 /·bubble* are passed through the material on the dresser to maintain the original shape. To make the grinding of the abrasive grains (especially the abrasive grains located in the center of the dresser) with a shallow depth, or even completely skip the grinding flaw, This imparts uneven processing on the abrasive pad of the polishing pad, causing the polishing pad to be non-uniformly processed' and at the same time causing wear of the trimming H unevenness hook, which is exhausted early. 200916262 Another prior art CMP pad dresser has other drawbacks. The prior art CMP pad dresser reduces the use of the pad conditioner, the useful life of the CMP pad regulator, depending on The number of processed abrasive particles, and the sum of the number of processed grains per abrasive, as previously described, was milled. The life of the perimeter is reduced by the non-uniform machining applied by the superabrasive (4). When the deformable CMP pad is pressed by the pressure of the trimming, it will guide the pad regulator. The edge of the 'B body is worn by the main load of the burning, and in addition, the centrally located abrasive particles will avoid bearing the same load, and the improper load increases the wear rate of the abrasive grains at the leading edge' and causes The dresser cannot be used until the central abrasive grain is exhausted. 'There are two factors that cause the prior art abrasive grain de-grinding particles to adhere to the disk body in a poor way. Regarding the retention force of the abrasive particles from the dresser disk, First, the abrasive particles are attached to the substrate by (4) or other money (4), and the abrasive particles are only attached to the substrate by weak mechanical force, and are not bonded by any form of chemical bonding force. Therefore, the abrasive particles are easily subjected to friction. If the force is strong and the mechanical force is detached, the electroplating material of the chemical polishing liquid will promote the falling off of the abrasive particles. 1 The opposite of the core, when the abrasive grains are welded to the substrate, the chemical bonding force makes the abrasive grain weight U solid & On it, 'However, the acidic substance in the chemical polishing liquid can reduce the chemical bonding force of the welded solid particles at a constant speed, and the abrasive particles are detached by the friction force of the polishing pad. Therefore, "the reduction of the weld and the chemical substance" Contact 'and in order to extend the service life of the dresser, the grinding process must be terminated when the processing starts, so that the grinding and adding X can not be performed at the same time, which wastes processing time and is inefficient. 200916262 During the welding process, The bending of the surface of the bamboo I will be scratched. The bending of the surface will also cause the abrasive particles to fall off. When the welding process is carried out, the gentleman, the 裎f乜 must be exposed to the high temperature environment, and the south temperature causes the repairer to work. However, U is used as the surface phase, so the damage of tnnu is smooth and planar. The 坏·民蛀卞曲ί生 will become rough and have high and low spots, which is bad. — Than the JU Ma δHai spot will cause the weld to peel off and form a slight scratch on the grinding surface of the workpiece. “The unevenness: affects the process after the dresser and affects the stagnation of the abrasive grain. / In summary, the CMP pad dresser should pursue optimal processing results with optimum efficiency and continuation of life. [Invention] Accordingly, the present invention provides a method and a CMP pad. The structure of the dresser: to increase the load of the central superabrasive grains during processing of the CMp polishing pad by the method of the present invention, each of the best abrasive grains on the CMp pad dresser is paired on the sigh substrate 'and according to the preset The pattern is placed on a specific area. 'The superabrasive grain can be formed into a pattern that reduces the penetration of the peripheral abrasive particles of the S CMP grinding 塾 trimming H and increases the wear of the central abrasive grain located at the (10) polishing pad conditioner. Through-force, the best load is located in the central superabrasive grain, one + JJ. The 5' abrasive grain consists of a superhard substrate, such as diamond, or cubic nitride, which is a single crystal or Polymorph Form β In one embodiment of the present invention, a method for loading a centrally located superabrasive and abrasive particles, comprising using a -CMP pad dresser, the = substrate is provided with a construction - Round superabrasive The pattern mentions that the abrasive grains located at the periphery are gradually inclined upward to the grinding center located at the center, and in addition, the a-angle of the sloping surface can control the load of the abrasive grains located at the center, and the inclined surface 200916262 can be formed in various ways, for example, super The abrasive particles are arranged on a substantially flat base: on or in, in which case the superabrasive grains are increased from the periphery by the periphery: the height of the working surface is reversed, and in some cases, the optimum angle of the bevel can be measured by grinding Known by the rate and elasticity of the mat. In another embodiment of the present invention, the method for increasing the centrally located super load comprises using a CMp pad dresser having a superabrasive particle constructed in pairs in a pattern. The superabrasive grain of the pattern is similar to that of the central superabrasive grain. When the abrasive grain is relatively '", when the aggregate is integrated, the abrasive grain cannot be as deep as the abrasive grain of the abrasive grain: Thus, by changing the maleness of the abrasive particles on the substrate to transfer the load from one block to another. In yet another embodiment of the invention, to increase the load of the centrally located superabrasive particles. The method 'is by positioning the centrally located abrasive particles in a specific shape (atttted), providing a centrally located abrasive grain having a greater penetration force against the CMP abrasive, as compared to the morphology of the peripheral abrasive particles. In the consistent application mode in the basin, the shape of the central abrasive grain exhibits a tip end point. The shape of the peripheral abrasive grain exhibits a working point with a plane or a seed line, and another solid silk side *4'accounting in the 'this bit The morphology of the central abrasive grain exhibits a working end point having a ridge line and the morphology of the peripheral abrasive grain exhibits a planar working end, and in yet another embodiment, the morphology of the central abrasive grain exhibits a pointed shape The shape of the working end point granules exhibits a planar working end peripheral grinding point and a point, and the shape of the abrasive grains between the two presents a working end with ridge lines. In addition to the above-mentioned methods of use, The invention also includes a method of making a CM® 200916262 pad dresser for increasing the load of the centrally located superabrasive particles. Generally, the method comprises the steps of: 1 preparing a substrate; A plurality of superabrasive particles are attached to the substrate in a pattern. The pattern reduces the penetration of the peripheral abrasive particles to the CMP abrasive crucible, and the pattern increases the penetration of the central abrasive particles to the CMP polishing pad. Method, the CMP pad dresser has considerable advantages. For example, the working plane of the CMP pad dresser is constructed to increase the contact of the central portion of the dresser, rather than The outside or, the leading edge, 'over-contact, increasing the contact at the center position, transferring the load from the peripheral area of the dresser to the central area of the dresser, thus extending the use of the dresser and making the dresser more efficient The CMP polishing pad is incorporated and trimmed, and the present invention comprises a CMp pad conditioner incorporating such a structure, including the particular configuration supporting the above method. The features and advantages of the present invention described above will be detailed in the following embodiments. The method is described. [Embodiment] Polishing pad dresser and related
在揭露及描述本發明之CMP 方法之前,需 法步驟及材料 術,同時在此使用的專有名詞,僅用以 而非用以作為限制條件。 —再者,除非文中另有指示g 範圍中所使用之單數形式將包含複數的指 否則在說明書及申請專利 例而言,” 一磨粒,,或,,一 ” 的指示物 因此,舉 一’’砂粒’’包含一個或多個該磨粒或砂 10 200916262 粒。 定義 描述及主張本發明時,以下的專有名詞用於以下所述 的定義。 在此所述的,,磨粒”或,’砂粒”、或相同的詞語,意指超 硬晶體、或多晶體基板、或混合基板’其包含但並非侷限 於鑽石、多晶鑽石(PCD)、立方氮化硼、多晶立方氮化蝴 (PCBN),此外,,,磨粒”、,’砂粒”鑽石”、”多晶鑽石 (PCD)”、’’立方氮化硼、”多晶立方氮化硼(PCBN),’可被交 替使用之。 在此所述的,,基板”,意指CMP研磨墊修整器的一部 份’該部份用來支撐磨粒,且為磨粒固設之處,本發明之 基板可為任何形狀、厚度、或材質,其以一方式而具有支 擇磨粒的能力’該方式能有效提供欲達成功效的工具,基 板可由堅固的材料組成、由製程中形成堅固物的粉狀材料 、'且成、或由具有彈性的材料組成,典型的基板材料範例不 具限制的包含金屬、金屬合金、陶瓷、及其混合物,此外 基板可包含焊接合金材料。 在此所述的,,工作表面”,意指CMp研磨墊修整器於操 作時’面向或接觸CMP研磨墊的表面。 在此所述的”導引邊緣”,意指CMp研磨墊修整器的邊 緣,該邊緣於CMP研磨墊運動時位於運動方向前方、 位於運動方向、或兩者皆是,在某些情況下 可視為不σ 4 kή 守W違緣 、匕括t益的邊緣,同時亦包括由修整芎上节 11 200916262 邊緣#向内延伸的部位,導引邊緣 修整琴外#丨、嘉 視為CMP研磨墊 磨:研磨塾修整器可成型有為-圖樣的 在:磨杻提供CMp研磨塾修整器之工作表面的中央 或在内4位至少一有效導引邊緣 、 央或在内部位可提話說’修整器的中 外緣的導引邊緣構4之功能等效於修整器 在此所述的,,尖銳部位”,意指任何位於結晶 邓位,包含但不侷限於 、 其他凸部。 相、方尖部位、及 :::述的,,中央部位磨粒'意指在—般加工 相較於外圍磨粒而言,承受到較少負载的磨 :以 气”位於中央’,意指修整器上的特定區域,兮巴 域由修整器之中心點向 該Ε 9。。二二、%㈣圍、或該區域可大約佔修整器之2。%_ 兮區域:*、或该區域可大約佔修整器之5〇%的範圍、或 '"區域可大約佔修整器之33%的範圍。 一 =所,的”位於外圍的”’意指在—般力…裒境 的中央部位的磨粒而言,承受到較多負載 的特定緣的、,,外圍的,,或”位於外圍,,意指修整器上 料哭:中㈣域由修整器之導引邊緣或最外側邊緣向 或㈣域可==域可大約佔修整器之9〇%的範圍、 大約佔^ 整"之鳩福的範圍、或該區域可 > i裔之50%的範圍、或該區域可 训的範圍(於中心的66%範圍之外)β Μ “益之 12 200916262 在此所述的”負載”,音并 μ才曰使用修整器時加於修整器上 之磨粒的總力。 在此所述的’’工作端點,,,奋 w心磨粒的端點,該磨粒朝 向CMP研磨墊定位之,日Prior to the disclosure and description of the CMP method of the present invention, the required steps and materials are used, and the proper nouns used herein are used merely as a limitation. In addition, unless the singular form used in the range of g is used to include the plural, otherwise in the specification and the patent application, the "a grain,, or, one" indicator is therefore ''Grit'' contains one or more of the abrasive grains or sand 10 200916262 pellets. Definitions In describing and claiming the present invention, the following proper nouns are used in the definitions described below. As used herein, abrasive grain or 'sand,' or the same word means super hard crystal, or polycrystalline substrate, or hybrid substrate 'which includes, but is not limited to, diamond, polycrystalline diamond (PCD) , Cubic Boron Nitride, Polycrystalline Cubic Nitride Butterfly (PCBN), In addition,, Abrasive, "Grit" Diamond, "Polycrystalline Diamond (PCD)", "Cubic Boron Nitride," Polycrystalline Cubic boron nitride (PCBN), 'can be used interchangeably. As used herein, "substrate" means a portion of the CMP pad dresser that is used to support the abrasive particles, and where the abrasive particles are fixed, the substrate of the present invention can be any shape or thickness. Or material, which has the ability to select abrasive grains in one way. This method can effectively provide a tool for achieving the effect, and the substrate can be composed of a solid material, a powdery material which forms a solid material in the process, and Or consisting of a material having elasticity, a typical example of a substrate material comprising a metal, a metal alloy, a ceramic, and a mixture thereof, and the substrate may comprise a solder alloy material. As used herein, the working surface means CMp The pad conditioner is 'facing or contacting the surface of the CMP pad during operation. As used herein, "guide edge" means the edge of a CMp pad dresser that is in front of the direction of motion, in the direction of motion, or both, when the CMP pad is moving, and in some cases visible For the sake of not σ 4 kή, the edge of the W-defense, including the edge of the benefit, and also the part that extends inward by the trimming section 11 200916262 edge #, guiding the edge to trim the piano outside #丨, Jia as CMP polishing pad Grinding: Grinding 塾 dresser can be shaped into a pattern: in the center of the working surface of the CMp grinding 塾 dresser provided by the honing machine or at least one effective guiding edge, inner or inner part of the 4th position can be said to be trimmed The function of the leading edge of the middle edge of the device is equivalent to that of the dresser described herein, "sharp portion", meaning any position in the crystallization, including but not limited to, other convex portions. Phase, square tip The part, and :::, the central part of the abrasive grain 'means that in the general processing compared to the peripheral abrasive grain, the grinding with less load: the gas is located in the center, meaning the dresser Specific area, the central area of the 兮巴域The Ε 9. . 22,% (four) circumference, or the area may account for approximately 2 of the dresser. %_ 兮 area: *, or the area can be approximately 5% of the trimmer, or the '" area can be approximately 33% of the trimmer. The term "in the periphery" means that in the case of abrasive particles in the central part of the environment, the specific edge of the load, which is subjected to a large load, is peripheral, or "is located at the periphery. , means the trimmer feeds the cry: the middle (four) domain is from the leading edge or the outermost edge of the trimmer or the (four) domain can == domain can account for about 9% of the trimmer, about 2% The scope of the blessing, or the range in which the area can be >50% of the i-be, or the range of the area that can be trained (outside the 66% of the center) β Μ “益之12 200916262 "Load", the sound and the total force of the abrasive particles applied to the dresser when using the dresser. At the end of the '' working end, the end of the abrasive grain, the abrasive grain is positioned toward the CMP pad, day
於加工製程中,該端點與CMP 研磨墊接觸’一般而言,磨粒 燈位的工作端點為其距離與基板 相接之最遠的一端。 在此所述的 έ士 Β、卜日,, . 非…日日^接’意指具有非結晶體結構的 同質性焊接組成物,該合金具有非共晶體相位,其加Μ 化時非一,欠,既然難以確定確切的合金組成物,在此使用In the processing process, the end is in contact with the CMP pad. In general, the working end of the abrasive lamp position is the farthest end from the substrate. As used herein, the gentleman's Β, 卜日, , . . . means a homogenous welded composition having an amorphous structure having a non-eutectic phase, which is not uniform when added. Owe, since it is difficult to determine the exact alloy composition, use here
之非結晶焊接合金,庫親主太亡阳L α視為在有限的溫度範圍内呈現出一 致性熔化狀態。 在此所述之,,合金,,,意指—金屬與另1料rnt 液態混合’該材料可為非金屬,例如石炭,或為一金屬、或 為一可增進或改良該金屬性質的合金。 、”在=所述的”金屬焊接合金,,、”焊接合金”、及”焊接材 料可又替使用,並意指可用於與超級磨粒、與支撐材料、 或與基材、形成化學鍵結的金屬合金,以使兩者穩固結合, 在此揭露之特定的焊接合金之成份與組成物,並非侷限用 於與其同時揭露的衫實施例,並可用於本發明所揭露之 任何其他的實施例中。 在此所述的”焊接”製程,意指於超級磨粒之碳原子及 焊接材料間形成化學鍵結,此外,”化學鍵結,,意指共價鍵 結’例如碳化物或硼化物鍵結’而非以機械力或較弱的原 子間吸引力’因此,當”焊接”超級磨粒時,會形成真正的 13 200916262 化學鍵結1而,t —般提到,’烊接,,金屬時,是意指形成 冶金鍵結,故焊接超級磨粒於一工件時,不須先 物形成。 在$所述的,,超級磨粒,,以及”超級磨料砂粒,,可交替使 用,,.並意指磨粒由非人造或人造鑽石、超硬結晶體、多晶 材料、或混合材料所組成,且並不僅包含鑽石、多晶鑽石 (啊、立方氮化蝴(CBN)、多晶立方氮化 :::,’、,’砂粒,,、,,鑽石,,、,—咖,心 可父替使用。 於焊接製程中,在此所述的,,直 i α 〜且接思指於超級磨舲 形成化學鍵結。 焊接金屬或合金為鍵結中介質而 …在此所述的,,粗糙”,意指一平面在不同特 判璜為一平面的凹 , —扣蚁τ 處不同的特徵審視方式可葫& -粗糙平面的指標,例如凸部頂端 見為 凹部的深度或凹陷旦 ,L 又或扠衫置、以及 1凹1^里,此外,粗糙的計算值包含有平而^ —设定區域的凸部及凹 匕3有千面上 度)、以及凸部或凹部門相/ (例如凸部或凹部的密 |尺W 4間相隔的距離。 在此所述的”陶瓷,,,立 質上耐熱及耐侵钱的材料^硬一般為結晶狀、且本 成’有時可添加含全屬材、’可由^製—非金屬材料而製 物、务“ 屬材枓,在此技術領域中,許容〜 ▲、及碳化物材料可視為陶孔b 於以下所舉的例子令 尤匕3有但不侷限 切、碳切、碳化鎮^氧化紹、氧切、氮化领、氮 14 200916262 在此所述的,,含有金屬的,,,意指各種金屬、合金、或 其混合物’且特指包含但不傷限於鋼、鐵、及不鐵鋼。 在此所述的”格柵,,,意指線成型為複數個方型的圖樣。 在此所述的針對距離及大小所述的,,一致性,,,意指該 尺寸間差異大約小於75微米。 在此所述的” Ra,,,意指測量—平面粗糙度時,測量相 鄰的凸部與凹部之間的高度差,此外,”Rmax”為測量一平 面粗糙度時’消|量最高的凸部高度與最低的凹部之 古 度差。 n 濃度、總數、及其他的數據值在此以範圍值表現,以 祀圍值表現僅僅是為了方便且縮短欲表現的數值,所以鹿 對此數值範圍彈性解釋,不應僅包含該數值範圍,若有= 舉出-亥單-數值及其中的數值範圍時,則應同時包含該 圍中所有的單—數值或包含其中的數值範圍。 舉例而言’-數值範圍”大約!微米到5微米” 釋為不僅包含大約!到5微米間’而同時包含該範圍中所 有的單-數值或包含其中的數值範圍,以,該 的表現也同時包含例如2、3、4等單一數值,以及Μ:: 3-5等介於其中的數值範圍,同樣的原則運 單一數值時,進一歩而上 丁)入—外 射… 纟而S ’不圍的廣度或所描述的 特徵為何,皆應運用該釋意原則。 本發明The non-crystalline solder alloy, which is considered to be in a finite temperature range, exhibits a uniform melting state. As used herein, an alloy, means that the metal is mixed with another material rnt liquid. The material may be a non-metal, such as charcoal, or a metal, or an alloy that enhances or improves the properties of the metal. . "Metal welding alloys," "welding alloys", and "welding alloys", and "welding materials" may be used interchangeably, and may be used to form chemical bonds with superabrasive grains, with support materials, or with substrates. Metal alloys for the firm combination of the two, the compositions and compositions of the particular solder alloys disclosed herein are not limited to the embodiments of the shirts disclosed at the same time, and can be used in any of the other embodiments disclosed herein. The "welding" process as used herein means the formation of a chemical bond between the carbon atoms of the superabrasive particles and the solder material. Further, "chemical bonding, meaning covalent bonding" such as carbide or boride bonds. The knot 'rather than mechanical force or weaker interatomic attraction', therefore, when "welding" superabrasive grains, a true 13 200916262 chemical bond 1 is formed, and t is generally mentioned, '烊接,, metal When it is meant to form a metallurgical bond, it is not necessary to form a superabrasive when it is welded to a workpiece. In the above, super abrasive grains, and "superabrasive grit, can be used interchangeably, and means that the abrasive particles are composed of non-artificial or synthetic diamonds, superhard crystals, polycrystalline materials, or mixed materials. And not only diamonds, polycrystalline diamonds (ah, cubic nitride butterfly (CBN), polycrystalline cubic nitride:::, ',, 'sand,,,,,,,,,,,,,,, For the welding process, as described herein, the straight i α 〜 and the thinking refers to the formation of chemical bonds in the super-grinding. The welding metal or alloy is the medium in the bond... as described herein, Rough" means that a plane is a concave in a different plane, and the different features of the ant τ are 葫&--the index of the rough plane, for example, the depth of the concave portion is the depth or depression of the concave portion. , L or forked, and 1 concave 1 ^, in addition, the rough calculated value includes the flat and the convex portion of the set area and the concave 3 has a thousand degrees), and the convex or concave department Phase / (for example, the density of the convex or concave portion | the distance between the feet W 4 . "described herein." Porcelain,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,枓, in this technical field, Xu Rong ~ ▲, and carbide materials can be regarded as Tao Kong b. In the following examples, we have 3 but not limited cut, carbon cut, carbonized town, oxidation, oxygen cut, nitrogen Chemical collar, nitrogen 14 200916262 As used herein, metal-containing, meaning various metals, alloys, or mixtures thereof, and specifically includes, but not limited to, steel, iron, and non-ferrous steel. The "grid," means that the wire is formed into a plurality of square patterns. As described herein, the distance, the size, and the consistency, mean that the difference between the sizes is less than about 75 microns. As used herein, "Ra," means measuring the height difference between the convex portion and the concave portion when measuring the plane roughness, and further, "Rmax" is the highest amount of "measurement" when measuring a plane roughness. The height of the convex portion is different from the ancient one of the lowest concave portion. n Concentration, total number, and others The value of the data is expressed here as a range value. The performance of the value is only for convenience and shortens the value to be expressed. Therefore, the deer has a flexible interpretation of the range of values. It should not only include the range of values. If there is = - The value and the range of values in it shall include all the single-values in the range or the range of values contained therein. For example, the '-value range' is approximately ! microns to 5 microns". 5 micrometers' while including all single-values in the range or ranges of values contained therein, such that the performance also includes a single value such as 2, 3, 4, etc., and Μ:: 3-5, etc. The range of values, the same principle when transporting a single value, enters the singularity and the singularity of the singularity of the singularity and the characteristics of the description. this invention
,係用以增進CMP研磨墊 藉由使用該裝置來針對CMP 申請人發明的裴置及方法 之處理或加工的效率及品質, 15 200916262 研磨塾進行處理或加工時,不僅可以延長該CMp研磨塾 的壽命,更能使該CMP研磨塾在使㈣維持不變,因此, 能增進該裝置所能達到的工作速度。 °月 > 閱第圖所示,現有技術的CMP研磨墊修整器 ⑽’其具有複數個電鑛於—基板⑽)上的磨粒(5q),該電 鍍材料(60) —般為酸性溶液中沉澱之鎳。 CMP研磨塾修整器⑽僅使用電鑛材料⑽來將磨粒 (5〇)附著於基板上,係具有許多缺點且於第一圖中得以清 楚的顯示出,首先,該電鍵材料無法與該磨粒間形成化學 鍵結,因此,僅藉由微弱的機械力將磨粒維持於基板_ 上,當將修整器旋轉抵靠CMp研磨塾時,作用於磨粒的 摩擦力即能克服該機械力,故磨粒容易與電鑛材料相分 離’則電錢材料中會留下如門旭、^ 戈間隙(70)的孔洞,除了化學研 磨液中的化學物質& , 卜… 貝即磨拉外,工件研磨後產生的剩餘物很 快的會將該孔洞填滿,該物質 *對電鑛材料造成化學破壞並 進一步減弱電鍍材料。 因為由㈣材料⑽)所形成的機械力僅能將磨粒⑽維 ^基板(40)上’則磨粒暴露於電鑛材料外的部份必須維 符在一極小值,儘昝‘ / 匕’仍不能避免電鍍材料盘CMP 研磨墊間的接觸,此外,於f 1 &過程中’電鍍材料傾向於 使磨粒週邊起泡,如凸部 、 ' f L 于、[巳極少暴露和腎笫Μ 列的磨粒外,該凸部使 各和緊在排 孅绐由从, 亍熠拉難以貝穿於CMP研磨墊的 纖維中,缺少了該貫穿六仫 牙力係不利於加工製程的有效性。 請參閱第二圖所示,一且 — 八有一基板(40)的CMP研磨墊 16 200916262 修整器(20),係具有藉由焊接材料(9〇)以習知真空高溫方式 焊固於基板上的磨粒(50),焊接材料(9〇)一般具有混合有碳 化物的金屬合金,該碳化物使磨粒與焊接材料間形成化學 鍵結,則與基板相固結,該固結有效的提升CMp研磨墊 修整器的整體強度,但卻帶來了其他的不良影響。 焊接材料(90)必須維持於一極小值,以避免完全覆蓋 磨粒(50),因此,磨粒包覆於一微薄的焊接材料塗層中, 其所產生的問題與焊接材料本身機械力極弱的問題結合 下,極弱的機械力與磨粒及焊接材料間形成的化學鍵結力 相互抵銷,實際上當驅移產生時,磨粒及焊接材料間的化 學鍵結力之強度,足以使焊接材料本身連同分離的磨粒一 起削離。 知接材料(90)也非常容易受研磨液的化學侵襲影響, 其促使磨粒(50)脫離,則焊接材料在機械力已為弱的情形 下,又進一步被減弱,因此,為了減少CMp研磨墊修整 器(20)暴露於化學研磨液中的面積,必須暫停對工件的研 磨,且在修整器附於CMP研磨墊上前,化學研磨液與cMp 研磨墊分離,停止研磨製程嚴重降低CMp研磨墊的恆定 性、增加了製造一成品的時間、且為無效率的。 單獨藉由習知焊接方式將磨粒(5〇)與基板(4〇)相結合, 當磨粒附加於基板上時,其具有另一個缺點為熔解的金屬 合金之表面張力,會促使磨粒產生叢集現象,該叢集為圖 中的(100)所示,並形成非所欲的間隙(11〇),其全面的影響 為磨粒的非一致性分布,其造成修整不具效率,此外,該 17 200916262 間隙使CMP研磨墊不平整,其最終造成CMp研磨墊的特 定區域較其他區域磨損快,因磨耗區域的研磨效率較其他 區域差,故工件所受的研磨加工不一致。 由於磨粒叢集區域於焊接材料(9〇)中形成堆積,故造 成另一個缺點,堆積形成物使部份磨粒於基板(4〇)上提升 至一特疋咼度,該南度高於其他磨粒的高度,因此,該最 高的磨粒可深入穿透CMP研磨墊的纖維,則會使得較少 磨粒得以與CMP研磨墊相接觸、或形成有效的修整影響。 相反的,本發明能提供CMP研磨墊平整的加工處理, 請參閱第三圖所示,該CMp研磨墊修整器(3_依據本發 明所製造,該CMP研磨墊修整器具有複數個磨粒(5〇),‘ 磨粒(5〇)係以焊接材料(90)與基板(40)相互固定。 Λ 磨粒(50)可為數種超硬的材質,該材質可為以下所舉 的例子但不侷限於此’舉例而言,該材料可為多晶鑽: (PCD)立方氮化棚(CBN)、多晶立方氮化蝴(pcBN)。 請參閱第三圖所示…覆蓋材料(12G)的表層,其於 終烊接製程後塗佈,如前所述’該覆蓋層大致上使得 表面較研磨合金所提供的工作表面平滑,該平滑度及平扭 度形成許多益處’包含有減少焊接薄片造成的微小磨擦、 及與防腐ϋ層結合較佳,此外,該覆蓋材料的卫作表 Ra值約少於!微米。 的 可使用複數個適當的覆蓋材料 人士, …、丨|,竣復蓋材料句 SI不錦、"、鉻、及其他合金例如錯 ’ μ後-材料可以許多種方式附加於其上,舉例而 18 200916262 言但不侷限於所舉的 (PVD) ’該覆蓋材 成:如電鍍及物理氣相沉積 特定的效果,但在本發明中該 Y度以達成 米,本發明中該表層厚产亦7 度了為、',".1至50微 予度亦可為約0.1至5微米。 δ月參閱第三圖所示之 Λ1 ' (〇) 5 ^ 塾修整W"方:腐敍層係成型於CMP研磨 ⑶無晶鑽石,研磨材料,例如類鑽碳 原子,此外,儘管防腐蝕; 具有至少、約8〇%的碳 可為任何厚度以達成特定的效 般而3其厚度介於〇.5 厚度可小…米,該厚度薄的防防腐_ 塾修整器的工作表面受仵:=r層確保⑽研磨 一 而不減低磨粒對於CMP研 磨塾的加工能力’防腐兹層—般以物理氣相沉積(PVD) 造,物理氣相沉積法(例如藉由使用石墨陰極的陰極射 線)係為常見的現有技術。For improving the efficiency and quality of the processing or processing of the CMP pad by using the device for the device and method of the CMP applicant, 15 200916262 When the grinding crucible is processed or processed, the CMp grinding crucible can be extended. The life span makes it possible to keep the CMP grinding crucible and, therefore, to increase the working speed that the device can achieve. ° Month> As shown in the figure, the prior art CMP pad dresser (10) has a plurality of abrasive grains (5q) on the substrate (10), and the plating material (60) is generally an acidic solution. Nickel precipitated in the middle. The CMP abrasive 塾 dresser (10) uses only the electro-mineral material (10) to attach the abrasive particles (5 〇) to the substrate, which has many disadvantages and is clearly shown in the first figure. First, the key material cannot be combined with the grinding The chemical bond is formed between the particles, so that the abrasive grains are only maintained on the substrate by weak mechanical force, and when the dresser is rotated against the CMp, the friction acting on the abrasive particles can overcome the mechanical force. Therefore, the abrasive grains are easily separated from the electro-mineral materials. The holes in the electric money materials will leave holes such as the door and the gap (70), except for the chemical substances in the chemical polishing liquid. The residue generated after the workpiece is ground will quickly fill the hole, and the substance* chemically damages the electro-mineral material and further weakens the plating material. Because the mechanical force formed by (4) material (10) can only be used to polish the particles (10) on the substrate (40), then the part of the abrasive grains exposed to the outside of the electro-mineral material must be in a minimum value, as far as '/ 匕'It is still not possible to avoid contact between the CMP pad of the plating material disc. In addition, during the f 1 & process, the plating material tends to foam around the abrasive grains, such as the convex portion, 'f L , ' [very little exposure and kidney In addition to the abrasive grains of the array, the convex portions make the respective tightness of the entanglement from the fibers of the CMP polishing pad, and the lack of the hexagram force is not conducive to the processing process. Effectiveness. Referring to the second figure, the CMP pad 16 200916262 dresser (20) having a substrate (40) is soldered to the substrate by soldering material (9〇) in a conventional vacuum high temperature manner. The abrasive grains (50) and the welding material (9〇) generally have a metal alloy mixed with a carbide, which forms a chemical bond between the abrasive grains and the welding material, and is consolidated with the substrate, and the consolidation is effectively enhanced. The overall strength of the CMp pad dresser, but with other adverse effects. The solder material (90) must be maintained at a minimum to avoid completely covering the abrasive particles (50). Therefore, the abrasive particles are coated in a thin coating of the solder material, which causes problems and the mechanical strength of the solder material itself. Under the weak problem, the extremely weak mechanical force and the chemical bonding force formed between the abrasive grains and the welding material cancel each other out. In fact, when the displacement occurs, the strength of the chemical bonding force between the abrasive grains and the welding material is sufficient for welding. The material itself is cut away along with the separated abrasive particles. The splicing material (90) is also very susceptible to the chemical attack of the polishing liquid, which causes the abrasive grains (50) to detach, and the welding material is further weakened in the case where the mechanical force is already weak, and therefore, in order to reduce the CMp grinding The area of the pad conditioner (20) exposed to the chemical slurry must be suspended, and the chemical slurry is separated from the cMp pad before the dresser is attached to the CMP pad. The grinding process is stopped and the CMp pad is severely reduced. The constantity increases the time required to manufacture a finished product and is inefficient. The abrasive particles (5〇) are combined with the substrate (4〇) by a conventional soldering method. When the abrasive grains are attached to the substrate, there is another disadvantage that the surface tension of the molten metal alloy promotes the abrasive grains. Producing a clustering phenomenon, which is shown in (100) in the figure, and forms an undesired gap (11〇) whose overall effect is a non-uniform distribution of abrasive grains, which causes trimming to be inefficient and, in addition, 17 200916262 The gap makes the CMP polishing pad uneven, which eventually causes the specific area of the CMp polishing pad to wear faster than other areas. Because the grinding efficiency of the wear area is worse than other areas, the grinding process of the workpiece is inconsistent. Since the abrasive grain cluster region forms a buildup in the solder material (9〇), another disadvantage is caused, and the buildup formation causes a portion of the abrasive grains to be lifted to a specific degree on the substrate (4〇), which is higher than the south degree. The height of the other abrasive particles, therefore, the highest abrasive particles can penetrate deep into the fibers of the CMP polishing pad, allowing less abrasive particles to contact the CMP polishing pad or to form an effective trim effect. In contrast, the present invention can provide a CMP polishing pad flat processing process, as shown in the third figure, the CMp polishing pad conditioner (3_ is manufactured according to the present invention, the CMP pad dresser has a plurality of abrasive grains ( 5〇), 'The abrasive grain (5〇) is fixed to the substrate (40) by the solder material (90). 磨 The abrasive grain (50) can be several super-hard materials, which can be the following examples. Not limited to this, for example, the material may be polycrystalline diamond: (PCD) cubic nitride shed (CBN), polycrystalline cubic nitride butterfly (pcBN). Please refer to the third figure... covering material (12G) The surface layer, which is applied after the final splicing process, as described above, 'the cover layer substantially smoothes the surface of the work surface provided by the abrasive alloy, and the smoothness and flat twist form many benefits' including reduction The micro-friction caused by the soldering sheet is preferably combined with the anti-corrosion layer. In addition, the Ra of the covering material has a Ra value of less than ! micron. A plurality of suitable covering materials can be used, ..., 丨|, 竣Cover material sentence SI not brocade, ", chrome, and other alloy examples If the error is 'μ after the material can be attached to it in many ways, for example, 18 200916262, but not limited to the proposed (PVD) 'the cover material: such as plating and physical vapor deposition specific effects, but in In the present invention, the Y degree is to reach a meter. In the present invention, the surface layer is also 7 degrees thick, and the ',".1 to 50 micro-degrees may also be about 0.1 to 5 micrometers. Λ之Λ 1 ' (〇) 5 ^ 塾修修W"方: The humus layer is formed in CMP grinding (3) amorphous diamond, abrasive material, such as diamond-like carbon atoms, in addition, although corrosion-resistant; has at least, about 8〇% The carbon can be of any thickness to achieve a specific effect. 3 its thickness is between 〇.5 and the thickness can be small...m. The thickness of the anti-corrosion _ 塾 塾 的 的 的 的 工作 = = = = = = = = = = = = = = = = = = = = = Without reducing the processing capacity of the abrasive particles for CMP abrasive crucibles, the anti-corrosion layer is formed by physical vapor deposition (PVD), and the physical vapor deposition method (for example, cathode ray by using a graphite cathode) is a common prior art. .
A 防腐㈣⑽)所提供的優點之_,為有效的“密封,, 工作表面’同時可密封其餘CMP研磨墊修整器⑽上易受 化學侵㈣表® ’由於該密封狀態,防腐㈣保護焊接材 枓(90)’使其不受CMP研磨墊中的化學研磨液所侵蝕,該 保護層使得CMP研磨墊修整器適當的對CMp研磨塾加工, 且排除為了延長習知技術之CMp研磨墊修整器使用壽侖 而暫停製程的情形’該持續的且,⑽研磨塾進行 力:工’使得產出較好的製造成果,且增加⑽研磨塾的 壽命及效率。 19 200916262 儘管本發明的數個實施例中具有防腐蝕層(130),但表 層材料(120)本身已含有防腐蝕的特性存在,因此,當僅使 用表層材料而不使用防腐蝕層時’仍能實際達到許多製造 上的優點。 將磨粒(1 80)固定於基板上的方法如第四至六圖所 不,首先,一具有孔洞(15〇)的模板(14〇)置放於焊接合金(1卯) 層上°亥焊接層可為藉由固定材料相互固定的焊接合金粉 末’該焊接合金粉末可包含其他金㈣末,且該其他粉末 可為構成焊接層的主要材料,藉由於該模板成型排列成預 設圖案的孔洞,以使每一磨粒位於特定的位置上。 當模板(14G)位於焊接合金層(19G)之後,以磨粒(18〇) 將孔洞(150)填滿’該孔洞具有預設的大小,以使每一孔洞 僅能容納-磨粒,磨粒或砂粒可為任何大小,#而於本發 明中,磨粒的直徑大小可約介於1〇〇至35〇微米之間。 於本表月另Λ施例中,為了獲得位於相同的尺寸範 圍中的磨粒之圖樣’模板之孔洞的大小可為定製,於其中 -實施例中’模板的孔洞足以挑選僅位於特定的尺寸範圍 中的砂粒,該尺寸範圍差異程度不料5〇微米,因此砂 粒尺寸的-致性使# CMp研磨墊平整,且平均分佈每一 磨粒的工作負載,同時,均勾的工作負載分佈減少單一磨 粒的應力,且延長CMP研磨墊修整器的有效壽命。 當模板⑽)的孔洞填滿砂粒(18〇)後,多:的磨粒則被 移除,且平坦表面⑽)塗佈於磨粒上,該平坦表面(_必 須為極強且堅硬的材料’因此其可將磨粒推入焊接人金層 20 200916262 (190)中’該材料不侷限於但可為鋼、鐵、或其合金等。 磨粒(180)如第六圖所示埋入焊接合金層(丨9〇)中,因表 面(160)為平坦,磨粒將以預設且一致的高度延伸出基板表 面,該一致的高度由模板(140)的厚度所決定,在較佳實施 例中,每一磨粒的高度將延伸5〇微米以内,因此,每一 磨粒以同樣的深度修整CMP研磨墊,然而,於某些應用 中,砂粒的高度不一定一致,因此,該技術領域中人可理 解以特疋輪廓的模板(140)及平面(16〇)可建構出該多種高 度的砂粒圖樣,舉例而言,該平面(16〇)可具有孔穴形狀以 將位於外圍的磨粒進一步壓入,使其較位於中央的磨粒更 為深入,該孔穴形狀將使磨粒’因此,該孔穴形狀將使磨 粒形成—斜面,該斜面之最低點形成於外圍磨粒的工作端 點’且向中央磨粒的工作端點漸向上傾斜。 第四至六圖所示之磨粒(180)為球形,然而,於第三圖 中其為點R ’本發明之磨粒所保護之範圍包含任何形狀, 其中包括正多面體、八面體、立方體、或自然晶形的磨粒。 然而,於其中一實施例中,磨粒具有預設的频,該形狀 係包含一延伸遠離基板(4〇)的尖端或尖銳頂點。 於另-實施例中’不採用將磨粒(18〇)壓入焊接合 i金::方,式’而將其以模板上預設的黏著劑固定於垾接 該練仍可維持固定於預設位置上,本發明之A. Anti-corrosion (4) (10)) provides the advantages of _, for effective "sealing, work surface" while sealing the remaining CMP pad dresser (10) susceptible to chemical attack (four) table ® 'sin this sealed state, anti-corrosion (four) protective welding material枓(90)' is not eroded by the chemical polishing liquid in the CMP pad, which allows the CMP pad dresser to properly process the CMp pad and eliminates the CMp pad dresser for extending the prior art. The use of Shoulun to suspend the process of 'continued', (10) grinding 塾 force: work' to produce better manufacturing results, and increase (10) the life and efficiency of the grinding raft. 19 200916262 Despite several implementations of the invention The example has an anti-corrosion layer (130), but the surface layer material (120) itself already contains anti-corrosion properties, so that when only the surface layer material is used without the anti-corrosion layer, many manufacturing advantages can still be achieved. The method of fixing the abrasive grains (180) on the substrate is as shown in the fourth to sixth figures. First, a template (14〇) having a hole (15〇) is placed on the layer of the solder alloy (1卯). welding It may be a solder alloy powder fixed to each other by a fixing material. The solder alloy powder may include other gold (four) ends, and the other powder may be a main material constituting the solder layer, and the template is formed into holes of a predetermined pattern by the template. So that each abrasive grain is located at a specific position. When the template (14G) is located behind the solder alloy layer (19G), the hole (150) is filled with abrasive particles (18〇). The hole has a preset size to Each hole can only accommodate - abrasive particles, the abrasive particles or sand particles can be of any size, and in the present invention, the diameter of the abrasive particles can be between about 1 〇〇 and 35 〇 microns. In another embodiment, in order to obtain the pattern of the abrasive grains in the same size range, the size of the hole of the template can be customized, and in the embodiment - the hole of the template is sufficient to select only in a specific size range. For grit, the size range is only 5 μm, so the size of the grit makes the #CMp polishing pad flat and evenly distributes the workload of each grit. At the same time, the work load distribution of the Hook reduces the single grit. Stress and extend the useful life of the CMP pad dresser. When the hole in the template (10) is filled with sand (18〇), more: the abrasive particles are removed and the flat surface (10) is applied to the abrasive particles. The flat surface (which must be a very strong and hard material) can therefore push the abrasive particles into the welder's gold layer 20 200916262 (190) 'this material is not limited but may be steel, iron, or alloys thereof and the like. The abrasive grains (180) are embedded in the solder alloy layer (丨9〇) as shown in the sixth figure. Since the surface (160) is flat, the abrasive grains will extend out of the substrate surface at a preset and uniform height, the uniform height. Determined by the thickness of the stencil (140), in the preferred embodiment, the height of each abrasive granule will extend within 5 〇 microns, so each abrasive granule is trimmed at the same depth to the CMP polishing pad, however, In application, the height of the sand grains is not necessarily uniform. Therefore, it is understood by those skilled in the art that the template (140) and the plane (16〇) of the special contour can be constructed to form the sand pattern of the various heights, for example, the plane. (16〇) may have a hole shape to further the abrasive grains located at the periphery Into the center of the abrasive grain, the shape of the hole will make the abrasive particles 'Therefore, the shape of the hole will cause the abrasive grains to form a bevel, the lowest point of the bevel is formed at the working end of the peripheral abrasive particles' And gradually inclined upward toward the working end of the central abrasive grain. The abrasive grains (180) shown in the fourth to sixth figures are spherical, however, in the third figure, they are points R'. The range protected by the abrasive grains of the present invention includes any shape including positive polyhedron, octahedron, Cubes, or natural crystalline abrasive grains. However, in one embodiment, the abrasive particles have a predetermined frequency that includes a tip or sharp apex that extends away from the substrate (4 turns). In another embodiment, the abrasive particles (18 〇) are not pressed into the welded alloy:: square, and the adhesive is fixed on the stencil to the splicing. Preset position, the present invention
中杈板(140)可放置於具有薄黏著層的轉移層(圖_ J 上,於此實施例中,磨粒因上述之模板製程而可黏著於:) 21 200916262 移層上,爾後將模板移除,該轉移層係與面向焊接層的磨 =設於焊接層(19〇)上,焊接4上設有前述之黏著層:該黏 著層之黏性係較轉移層上之黏著層為強,因此,磨粒係^ 模板上預設的圖案轉而固定於焊接合金上。 、 當磨粒(180)部分埋入或黏著於焊接合金層(19〇)時,气 層如第三圖所示與基板(40)相互固定,於另一實施例中了 焊接合金層可先與基板相互固定,隨後磨粒以前述的模板 增設於其上,該焊接合金可為技術領域中所知的任何材 料’在特定的情況下,T為具有至少2%重量之鉻的鎳合 金,具有該成份的焊接合金極硬並較難以受化學研磨液的 化學侵姓,因此,該防腐飯層(13〇)及該包覆層(12〇)為非必 要特徵。 由於磨粒(50)穩固的嵌入或於焊接合金層(9〇)上,液化 焊接合金的表面張力不足以使磨粒如第二圖所示形成叢 集,此外,焊接加厚使得較小的角度及較少或甚至無堆積 形成,該焊接反而於每一磨粒間成型一微凹的表面,以提 :額外的結構強度,於另一實施例中,焊接合金層(州的 厚度為預设,以使至少約10%_9〇%的磨粒貫穿焊接材料 的外表面或工作表面,當使用包覆層(120)時,則會加以選 擇或《又置磨粒,以使至少約1 〇%_9〇%的磨粒貫穿包覆層(1 2〇) 的外表面或工作表面。 藉由本方法將磨粒(50)於製程中維持固定,磨粒間可 成形出均勻的間隙’此外,磨粒可以一致的高度或距離延 伸出基板(40)上,意味著當設於CMp研磨墊上時,磨粒以 22 200916262 一致的深度穿設於CMP研磨墊的嬙妞ώ 斗a 〜β登的纖維中,該均勻的間隙 及一致的凸部使得CMP研磨墊祜妁Λ2二The middle slab (140) can be placed on a transfer layer having a thin adhesive layer (Fig. _J, in this embodiment, the abrasive particles can be adhered to by the template process described above) 21 200916262 On the transfer layer, the template is then applied Removal, the transfer layer and the grinding layer facing the soldering layer are disposed on the soldering layer (19〇), and the bonding layer is provided on the soldering 4: the adhesive layer is stronger than the adhesive layer on the transfer layer Therefore, the preset pattern on the abrasive system is fixed to the solder alloy. When the abrasive grain (180) is partially embedded or adhered to the solder alloy layer (19〇), the gas layer is fixed to the substrate (40) as shown in the third figure, and in another embodiment, the solder alloy layer may be first The substrate is fixed to each other, and then the abrasive grains are added thereto by the aforementioned template. The solder alloy may be any material known in the art. In a specific case, T is a nickel alloy having at least 2% by weight of chromium. The solder alloy having this composition is extremely hard and relatively difficult to be chemically invaded by the chemical polishing liquid. Therefore, the anti-corrosion rice layer (13〇) and the coating layer (12〇) are optional features. Since the abrasive grains (50) are firmly embedded or welded to the alloy layer (9 〇), the surface tension of the liquefied welding alloy is insufficient to cause the abrasive grains to form a cluster as shown in the second figure, and further, the weld thickening causes a smaller angle. And less or even no buildup, the weld instead forms a dimple surface between each abrasive grain to provide additional structural strength. In another embodiment, the weld alloy layer (state thickness is preset) So that at least about 10% to about 9% of the abrasive particles pass through the outer surface or the working surface of the solder material. When the cladding layer (120) is used, it is selected or "grabbed again to make at least about 1 〇 %_9〇% of the abrasive grains penetrate the outer surface or the working surface of the coating layer (1 2〇). By the method, the abrasive grains (50) are maintained in the process, and a uniform gap can be formed between the abrasive grains. The abrasive particles can extend out of the substrate (40) at a uniform height or distance, meaning that when disposed on the CMp polishing pad, the abrasive particles are passed through the CMP polishing pad at a uniform depth of 22 200916262. The uniform gap and uniform protrusions in the fiber make the CMP pad Shuo Λ2 two
巧μ势被均勻的加工,並增加CMP 研磨塾研磨效率及其壽命,了以特定的方法將磨粒埋入 或黏著於焊接合金,技術領域中人將可理解出其他替代的 方法’例如將磨粒固定於基板上,然後再設置焊料,在此 情形下’磨粒可藉前述之模板的方法而固定於基板上,並 以膠或其他適當的固定材料加以固定,然後將焊接材料設 於基板上環繞於磨粒處,並可增設包覆材料。 雖然本發明包含多種用於設置磨粒的圖樣,其可藉由 月ί述方法成型之,本發明另可成型一特定的預設圖樣,其 更能適當的符合CMP研磨墊修整器的需求,為了形成該 圖樣,每一磨粒依據該圖樣固設於特定的位置,該圖樣能 有放柁進特殊的CMP研磨塾加工效果,並可變化以達成 特殊的修整效果。 舉例而言,許多習知的CMP研磨墊之修整效果可藉 由特疋的磨粒排列形態加以改善,特別是當CMP研磨塾 八有彈性時’研磨藝的下壓力使得CMP研磨墊升起或堆 積’致使其與修整器的導引邊緣相接觸而產生一角度上的 矛夕動由於修整器與磨粒形成一全面的接觸,故提升過程 可改善CMP研磨墊於修整器導引邊緣的加工效果,則其 於CMP研磨墊上已通過修整器之導引邊緣的區域上形成 下沉作用,即使下沉作用不產生,由於CMP研磨墊不能 再次升起於修整器下,修整器上其餘位於導引邊緣後的區 域所進行的加工,會產生較導引邊緣少的加工效果(換言 23 200916262 之,第一排的磨粒以修整器方向性的移動與CMp研磨墊 相遇、旋轉加工CMP研磨墊、或兩者兼具),因此主要 的加工負載係落於修整器之導引邊緣的磨粒上,並形成不 均勻的磨粒磨耗。 每一磨粒的貫穿深度主要受兩因素掌控,磨粒間的距 離及突伸高度,稀疏設置的磨粒比密集設置的磨粒具有更 好的加工效果,因此,本發明之其中一實施例令,磨粒的 圖樣可成型為得以使CMP研磨墊於修整器下方内側或中 央時提升(換言之緊接著導引邊緣後的區域),因此 使其受位於導引邊緣後的磨粒加工,實際上’該形態提供 修整器之工作表面上多樣化的導引邊緣,換言之,位於外 圍的磨粒較為於中央的磨粒之密度較高,外圍磨粒的密度 可為至少1.25、2、或5倍相對於中央磨粒的密度,外圍 磨粒可更進步傾斜以相對高於中央磨粒,在此情形下, /、變化〖生的始度使得CMP研磨墊於相對於修整器中央部 位下岬提升,並增進加工有效性,數種磨粒形態或圖樣可 提供磨粒所需的排列’已達成該動作並達成該特定所需的 加工效果。 如第七圖所不本發明之實施例中,磨粒可被加以排 列’以使磨粒僅沿修整器的導引邊緣(2〇〇)設置,請參 閱第八圖所示’本發明之另一實施例,磨粒可被設置成為 於導引邊緣(200)較密集(相較於中央部位(21〇)),相反的, 本發明之又—實施例中,磨粒可被加以排列,以使磨粒位 於中央較為密集(相較於導引邊緣,圖中未示),於又另 24 200916262 -實施例中’磨粒可被加以排列,以使修整器之中央部位 的磨粒較外圍部位的磨粒密度高,此彳,位於中央部位與 外圍部位之間的磨粒’纟密度亦介於兩者之間,請參閱第 九圖所不’於本發明之再另一實施例巾,磨粒可被加以排 列,以使其於每—磨粒間形成均勾分部的間隙,其可有效 的使传CMP研磨塾產生前述的提升效果,該一致的磨粒 分佈可成型出格栅’並可於每—磨粒間成型約ΐ5_ι〇倍磨 粒大小的間隙,技術領域中人另可推知,磨粒可以不同的 斜度漸高或漸低自⑽研磨墊修整器之導引邊緣至中央 部位排列。 於另-實施例中’本發明提供一方法,使得當CMp :磨塾用修整器進行加工時,用以增力口 CMp研磨塾修整 申央。卩位之磨粒的工作負載,該方法將磨粒成型為一圖 樣減/ CMP研磨墊修整器之外圍磨粒穿設於研 磨塾中,並增加CMP研磨墊修整器之中央磨粒穿設於CMp 研磨墊中,該超級磨粒個別依據預設圖樣設於cMp研磨 堅上的特別位置,中央部位的磨粒可至少增加雜3〇%以 内之外圍磨粒的工作負冑,該工作負載可進一步相同於外 圍磨粒或全部磨粒的工作負載。 可以夕種方式以達到增加中央磨粒之工作負載,舉例 而言:超級磨粒可排列設置為一圖樣,如第十圖所示,該 圖樣係使得自外圍磨粒的工作端至中央磨粒的卫作端成型 向上的傾斜度’另一用以增加工作負载的實施例,係將 超級磨粒排列設置為一圖樣,該圖樣係如前所述使外圍磨 25 200916262 粒之密度大於中央磨粒之密《,該圖樣另可使中央磨粒成 型為-高度,如第十一圖所示’ f亥高度使中央磨粒相較於 外圍磨粒下,能較深的穿透入Cmp研磨塾中。 請參閱第十圖所示,本發明提供一 CMp研磨墊修整 器,其藉由提供與超級磨粒連接的基板(3〇〇)以增加中央部 位磨粒的工作負載,該超級磨粒具有自外圍超硬磨粒(32〇) 至中央超硬磨粒(3 10)向上傾斜的傾斜度(3〇5),該向上傾斜 的傾斜度可藉由增加自外圍磨粒至中央磨粒的高度而成型 出,因此,向上傾斜的傾斜度藉由提供中央磨粒與cMP 研磨墊間全面的接觸,以將外圍磨粒的工作負載轉移至中 央磨粒,該增加的接觸改善CMP研磨墊的加工及整體cMp 研磨墊的加工磨耗,該傾斜度受CMp研磨墊的速度及彈 性所決定’—般而言’ # CMp研磨塾與導引邊緣之磨粒 相接觸時,會產生内凹變形,該CMp研磨塾的内凹變形 強度取決於CMP研磨墊的彈性和旋轉速度,本發明較佳 的實施例中,該傾斜度大約介於〇1%_〇 5%之 別為0.2%。 特 另一實施例令,該傾斜度可藉由基板的另一形態而成 型出,如第十圖所* ’ CMp研磨塾修整器的基板為實質上 平坦的’㉟而,在某些方面而言,基板可設計為相對應於 %轉之CMP研磨塾的凹㉝,該設計可提供工作端之磨粒 (3 10)(320)所需的斜度,該磨粒位於基板之工作表面上的高 度為實質上一致’該基板-般以金屬、陶瓷或彈性材料組 成,於其中一實施例中,基板為不鏽鋼製,基板另可為粉 26 200916262 末材料衣成’該粉末材料經製造後可固化,該粉末另可包 3焊接合金,舉例而言,該焊接合金為鎳與碳化物的結合、 或具有至少2%重量的鉻,該基板並另可實質具有焊接材 料。 第十圖為CMP研磨墊修整器的圖面,該〇ΜΡ研磨 墊修整器於加工CMp研磨墊時增加中央磨粒的工作負載, 隸依據其高度而以不同的速度磨耗,—般而言,央端能 ϋ夕穿透於CMp研磨塾中的穿透力,並產生較其他 P位為佳的修整,具有平面的磨粒提供較少穿透於CMp 研磨塾中的穿透力,具有邊緣的磨粒提供中等的修整和穿 ' 月>閱第十一圖所示,基板(4〇〇)上設有複數個呈預 設圖樣的超級磨粒(410)(42〇)(43〇),該圖樣用以使修整器 中央磨粒相車又於外圍磨粒下,能較深入穿透於cMp研 磨,中’該+央超硬磨粒_)可設計為提供-尖端位於工 作端⑽)上’該磨粒修整CMP研磨墊較佳,且相較於其 他磨㈣言具有較高的穿透力’外圍磨粒⑽)可設計為提 供一棱線或—平面(43G)位於卫作端(405)上,如第十一圖所 不之實施例,當中央磨粒成型為提供一尖端位於工作端(405) 上’且外圍磨粒(42〇)成型為提供-稜線或-平面(430)位於 工作端(4G5)上k ’任何位於兩者之間的磨粒(例成型為提 供一稜線位於工作她μ 址γ 而上,^而,於其他實施例中,任何介 於中央磨粒和外圍磨#工土 > ηη _ 拉兩者之間的磨粒,其可同樣為其他 高度’於另一實施例中f圖中 _ J甲C圖中未不),中央磨粒成型為提 供一棱線於工作端卜,工AL m & 上而外圍磨粒成型為提供一平面於工 27 200916262 作端上。 除了上述的裝置和方法外’本發明提供一製造上述 CMP研磨墊修整器的方法,該方法包含數步驟,包含有提 供一基板、及以一圖樣設置超級磨粒於基板上、該圖樣係 減少外圍磨粒穿透於CMP研磨墊中的穿透力、並增加中 央磨粒穿透於CMP研磨墊中的穿透力。 技術領域中人可以多種修正和替代的排列來達成本發 明’該修正和排列係依據本發明的精髓及範圍,故其仍包 含於本發明的範圍中,因此,本發明上述揭露特定的實施 狀態,係為較佳的實施狀態’而技術領域中人可能加以略 為修正,故本發明包含但不侷限於上述特定的實施狀態, 包含上述的尺寸、材料、形狀、方法、製程、組合、和用 途0 【圖式簡單說明】 第一圖為習知技術之CMP研磨墊修整器的側視圖, 其以電鍍方法將磨粒固設於本發明盤體基板上。 第一圖為習知技術之CMp研磨墊修整器的側視圖, 其以傳統的焊接方法固設磨粒於盤體基板上。 Η為本發明其中一實施例之Cmp研磨塾修整器 的側視圖。 ° ^圖為本發明其中一實施例之側視圖,其為用以設 置磨粒於表面卜+ θ + m Α $面上之具有知接合金層的模板。 八 圖為本發明其中一實施例的側視圖,其為具有焊 接合金層於其表面的模板,且磨粒填入該模板的孔隙中, 28 200916262 將磨粒壓入焊接合金層。 第六圖為本發明其中一實施例的側視圖,其 金層具有壓入的磨粒 巧~接合 弟七圖為本發明其中一實施例的上視圖,其為— 研磨塾修整益的工作平面上具有成對設於基板的磨板,以 致於該磨粒僅大致上沿修整器的導引邊緣呈現之。 第八圖為本發明其中一實施例的上視圖,其為一 CMP 研磨塾修整器的卫作平面上具有成對設於基板的磨粒,以 致於位於導引邊緣的磨粒多於位於中央的磨粒。 第九圖為本發明其中一實施例的上視圖,其為一 CMp 研磨塾修整器的工作平面上具有成對設於基板的磨粒,以 致於該磨粒均勻的分佈於其上。 第十圖為以本發明其中一實施例製造之CMp研磨墊 修整器的側視圖。 第十一圖為以本發明其中一實施例製造之CMP研磨 塾修整器的側視圖。 【主要元件符號說明】 (10)CMP研磨塾修整器 (40)基板 (50)磨粒 (60)電鍍材料 (70)間隙 (80)凸部 (90)焊接材料 29 200916262 (100)叢集 (110)間隙 (120)覆蓋材料 (130)防腐蝕層 (140)模板 (150)孔洞 (160)平坦表面 (180)磨粒 (190)焊接合金 (200)導引邊緣 (210)中央部位 (300)基板 (305)傾斜度 (3 10)中央超硬磨粒 (320)外圍超硬磨粒 (400)基板 (405)工作端 (410)超級磨粒 (420)超級磨粒 (430)超級磨粒The technique is uniformly processed, and the CMP grinding, grinding efficiency and life are increased. The abrasive particles are embedded or adhered to the welding alloy in a specific way. Those skilled in the art will understand other alternative methods. The abrasive particles are fixed on the substrate, and then the solder is disposed. In this case, the abrasive particles can be fixed on the substrate by the method of the foregoing template, and fixed by glue or other suitable fixing material, and then the solder material is set on the substrate. The substrate is surrounded by the abrasive grains, and a coating material may be added. Although the present invention includes a plurality of patterns for setting abrasive grains, which can be formed by a method of the present invention, the present invention can also form a specific predetermined pattern which is more suitable for the requirements of the CMP pad dresser. In order to form the pattern, each of the abrasive grains is fixed to a specific position according to the pattern, and the pattern can be placed into a special CMP grinding machine processing effect, and can be changed to achieve a special finishing effect. For example, the tailoring effect of many conventional CMP polishing pads can be improved by the special abrasive particle arrangement, especially when the CMP polishing is elastic, the grinding pressure of the polishing machine causes the CMP polishing pad to rise or The stacking causes it to contact the leading edge of the dresser to create an angle of spear. Since the dresser forms a full contact with the abrasive particles, the lifting process improves the processing of the CMP pad on the leading edge of the dresser. The effect is that the CMP polishing pad has a sinking effect on the area of the leading edge of the dresser, even if the sinking action does not occur, since the CMP pad cannot be raised again under the dresser, the rest of the dresser is located The processing performed in the area after the edge is produced with less processing effect than the leading edge (in other words, 2009, 200926262, the first row of abrasive grains meets the CMp polishing pad with the directional movement of the dresser, and the CMP polishing pad is rotated. Or both, so the main processing load falls on the abrasive particles at the leading edge of the dresser and creates uneven abrasive wear. The penetration depth of each abrasive grain is mainly controlled by two factors, the distance between the abrasive grains and the protrusion height, and the sparsely disposed abrasive grains have better processing effects than the densely disposed abrasive grains, and therefore, one embodiment of the present invention Thus, the pattern of the abrasive particles can be shaped such that the CMP polishing pad is lifted in the inner or center of the underside of the dresser (in other words, the area immediately after the leading edge), so that it is subjected to abrasive grain processing after the leading edge, actually The upper form provides a plurality of guiding edges on the working surface of the dresser, in other words, the density of the abrasive grains located at the periphery is higher than that of the central abrasive grains, and the density of the peripheral abrasive grains may be at least 1.25, 2, or 5. In contrast to the density of the central abrasive particles, the peripheral abrasive particles can be more progressively inclined to be relatively higher than the central abrasive particles. In this case, the change in the initial degree causes the CMP polishing pad to lie down relative to the central portion of the dresser. Lifting and increasing the effectiveness of the process, several abrasive morphologies or patterns provide the desired alignment of the abrasive particles 'this action has been achieved and the desired desired processing effect is achieved. As in the seventh embodiment of the invention, the abrasive particles may be arranged 'in order to allow the abrasive particles to be disposed only along the leading edge (2〇〇) of the dresser, see the eighth embodiment of the present invention. In another embodiment, the abrasive particles can be arranged such that the leading edge (200) is denser (compared to the central portion (21〇)), and conversely, in the further embodiment of the invention, the abrasive particles can be arranged In order to make the abrasive particles densely located in the center (not shown in the figure, compared to the leading edge), in another 24 200916262 - in the embodiment, the abrasive particles can be arranged to make the abrasive grains in the central part of the dresser The density of the abrasive grains is higher than that of the peripheral portion. Therefore, the density of the abrasive grains between the central portion and the peripheral portion is also between the two. Please refer to FIG. 9 for another implementation of the present invention. In the case of the towel, the abrasive particles may be arranged so as to form a gap between the abrasive grains and each of the abrasive grains, which can effectively transmit the CMP abrasive flaw to produce the aforementioned lifting effect, and the uniform abrasive grain distribution can be formed. Out of the grille' and can form about _5_ι〇 times the size of the abrasive grains between each abrasive grain The gap, in the technical field, can be further inferred that the abrasive grains can be arranged at different inclinations from the leading edge of the polishing pad dresser to the central portion. In another embodiment, the present invention provides a method for reinforcing the center of the CMp grinding 当 when the CMp: honing dresser is used for processing. The working load of the abrasive particles in the position, the method forms the abrasive grains into a pattern minus/the CMP pad dresser, and the peripheral abrasive grains are disposed in the polishing crucible, and the central abrasive grains of the CMP pad dresser are added to In the CMp polishing pad, the super abrasive particles are set in a special position on the cMp grinding nail according to the preset pattern, and the abrasive grains in the central portion can increase the working load of the peripheral abrasive grains within at least 3% of the impurities. The workload is further the same as the peripheral abrasive or all abrasive particles. It is possible to increase the workload of the central abrasive particles in an evening manner. For example, the superabrasive grains can be arranged in a pattern, as shown in the tenth figure, the pattern is from the working end of the peripheral abrasive grains to the central abrasive grains. The embodiment of the guarding end is inclined upwards. Another embodiment for increasing the workload is to arrange the superabrasive grains into a pattern which is such that the density of the peripheral grinding 25 200916262 is greater than that of the central grinding. "The grain is dense", the pattern can also make the central abrasive grain into a height, as shown in the eleventh figure, the height of the fhai makes the central abrasive grain penetrate deeper into the Cmp than the peripheral abrasive grain. In the middle. Referring to the tenth figure, the present invention provides a CMp polishing pad conditioner which provides a working load of a central portion of abrasive grains by providing a substrate (3 turns) connected to the superabrasive particles, the super abrasive particles having self The inclination of the outer superabrasive grain (32〇) to the central superhard abrasive grain (3 10) is inclined upward (3〇5), and the inclination of the upward inclination can be increased by the height from the peripheral abrasive grain to the central abrasive grain Formed out, therefore, the upwardly inclined slope provides overall contact between the central abrasive particles and the cMP polishing pad to transfer the peripheral abrasive work load to the central abrasive particles, which increases the processing of the CMP polishing pad. And the processing wear of the overall cMp polishing pad, which is determined by the speed and elasticity of the CMp polishing pad. - Generally speaking, when the CMp grinding 接触 is in contact with the abrasive grains of the leading edge, a concave deformation occurs. The strength of the concave deformation of the CMp abrasive crucible depends on the elasticity and rotational speed of the CMP pad. In a preferred embodiment of the invention, the slope is approximately 0.2% of 〇1%_〇5%. In another embodiment, the slope can be formed by another form of the substrate, as in the tenth figure, the substrate of the CMp abrasive 塾 conditioner is substantially flat '35, and in some aspects The substrate can be designed as a recess 33 corresponding to a %-turn CMP abrasive crucible that provides the desired slope of the abrasive particles (3 10) (320) at the working end, which is located on the working surface of the substrate. The height of the substrate is substantially uniform. The substrate is generally made of metal, ceramic or elastic material. In one embodiment, the substrate is made of stainless steel, and the substrate may be powder 26 200916262. The material is made into a powder material. Curable, the powder may additionally comprise a solder alloy which, for example, is a combination of nickel and carbide, or has at least 2% by weight of chromium, and the substrate may additionally have a solder material. The tenth picture shows the surface of the CMP pad dresser, which increases the workload of the central abrasive grain when processing the CMp pad, and wears it at different speeds depending on its height, in general, The central end can penetrate the penetration force in the CMp grinding boring and produce better trimming than the other P-positions. The flat abrasive grains provide less penetration into the CMp grinding boring, with edges. The abrasive grain provides medium trim and wear 'month'. As shown in the eleventh figure, the substrate (4〇〇) is provided with a plurality of superabrasive grains (410) (42〇) in a preset pattern (43〇). ), the pattern is used to make the center of the dresser and the outer abrasive particles, and can penetrate deeper into the cMp grinding. The 'the + super hard abrasive grain _ can be designed to provide - the tip is at the working end (10)) 'The abrasive grain trimming CMP polishing pad is better, and has higher penetrating power than other grinding (4) 'peripheral abrasive grains (10)) can be designed to provide a ridge line or - plane (43G) in Wei At the end (405), as in the embodiment of the eleventh embodiment, when the central abrasive grain is formed to provide a tip at the working end ( 405) Upper and peripheral granules (42 〇) are formed to provide - ridge or - plane (430) on the working end (4G5) k 'any abrasive grain between the two (formed to provide a ridge line at work) Her μ address is γ, and in other embodiments, any abrasive particles between the central abrasive grain and the peripheral abrasive #工土> ηη _ pull, which can be other heights as well In one embodiment, in the figure f, the central abrasive grain is formed to provide a ridge line at the working end, and the peripheral abrasive grain is formed to provide a plane for the work 27 200916262 On the end. In addition to the apparatus and method described above, the present invention provides a method of fabricating the above-described CMP pad dresser, the method comprising a plurality of steps including providing a substrate and providing a superabrasive particle on the substrate in a pattern, the pattern being reduced Peripheral abrasive particles penetrate the penetration force in the CMP pad and increase the penetration of the central abrasive particles into the CMP pad. The present invention may be embodied in a variety of modifications and alternative arrangements. The modifications and permutations are in accordance with the spirit and scope of the present invention and are therefore included in the scope of the present invention. , which is a preferred embodiment, and may be slightly modified by those skilled in the art, and the present invention includes, but is not limited to, the specific implementation states described above, including the dimensions, materials, shapes, methods, processes, combinations, and uses described above. 0 [Simple Description of the Drawings] The first figure is a side view of a conventional CMP pad dresser in which abrasive grains are fixed by electroplating on the disk substrate of the present invention. The first figure is a side view of a conventional CMp pad dresser that secures abrasive particles to a disk substrate in a conventional soldering process. BRIEF DESCRIPTION OF THE DRAWINGS A side view of a Cmp grinding 塾 dresser of one embodiment of the present invention. The Fig. 4 is a side view of one embodiment of the present invention, which is a template for arranging abrasive grains on the surface of the surface + θ + m Α $ with a known bonding gold layer. Figure 8 is a side elevational view of one embodiment of the present invention having a template having a weld bond gold layer on its surface, with abrasive particles filled into the pores of the template, 28 200916262 pressing the abrasive particles into the weld alloy layer. Figure 6 is a side elevational view of one embodiment of the present invention, the gold layer having a press-fitted abrasive grain, and the joining of the seventh embodiment of the present invention is a top view of one embodiment of the present invention, which is a working plane for grinding and repairing There is a pair of abrasive plates disposed on the substrate such that the abrasive particles are only present substantially along the leading edge of the trimmer. Figure 8 is a top view of one embodiment of the present invention, which has a pair of abrasive grains disposed on the substrate in a plane of the CMP abrasive dresser so that the abrasive grains located at the leading edge are more than the center Abrasive grain. Figure 9 is a top plan view of one embodiment of the present invention having a pair of abrasive particles disposed on a substrate in a working plane of a CMp abrasive dresser such that the abrasive particles are evenly distributed thereon. Figure 11 is a side elevational view of a CMp polishing pad conditioner manufactured in accordance with one embodiment of the present invention. Figure 11 is a side elevational view of a CMP abrasive trowel trimmer made in accordance with one embodiment of the present invention. [Main component symbol description] (10) CMP polishing 塾 dresser (40) substrate (50) abrasive grain (60) plating material (70) gap (80) convex portion (90) welding material 29 200916262 (100) cluster (110 ) Gap (120) Cover Material (130) Anti-corrosion Layer (140) Template (150) Hole (160) Flat Surface (180) Abrasive Grain (190) Welding Alloy (200) Guide Edge (210) Central Part (300) Substrate (305) Tilt (3 10) Central Super Hard Abrasive (320) Peripheral Super Hard Abrasive (400) Substrate (405) Working End (410) Super Abrasive Grain (420) Super Abrasive Grain (430) Super Abrasive Grain
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US44762099A | 1999-11-22 | 1999-11-22 | |
US11/786,443 US20070254566A1 (en) | 1999-11-22 | 2007-04-10 | Contoured CMP pad dresser and associated methods |
Publications (1)
Publication Number | Publication Date |
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TW200916262A true TW200916262A (en) | 2009-04-16 |
Family
ID=23777067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW97112737A TW200916262A (en) | 1999-11-22 | 2008-04-09 | Contoured cmp pad dresser and associated methods |
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TW (1) | TW200916262A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI594291B (en) * | 2016-08-17 | 2017-08-01 | 鴻創應用科技有限公司 | Ceramic wafer and the manufacturing method thereof |
CN110691674A (en) * | 2017-06-09 | 2020-01-14 | 日本精工株式会社 | Rotary forming dresser and dressing method |
TWI738420B (en) * | 2019-07-15 | 2021-09-01 | 南韓商新韓鑽石工業股份有限公司 | Cmp pad conditioner and method for manufacturing the same |
TWI823456B (en) * | 2022-07-01 | 2023-11-21 | 詠巨科技有限公司 | Conditioning assembly, manufacturing method thereof, and assembled conditioner using the same |
-
2008
- 2008-04-09 TW TW97112737A patent/TW200916262A/en unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI594291B (en) * | 2016-08-17 | 2017-08-01 | 鴻創應用科技有限公司 | Ceramic wafer and the manufacturing method thereof |
CN110691674A (en) * | 2017-06-09 | 2020-01-14 | 日本精工株式会社 | Rotary forming dresser and dressing method |
CN110691674B (en) * | 2017-06-09 | 2021-10-08 | 日本精工株式会社 | Rotary forming dresser and dressing method |
TWI738420B (en) * | 2019-07-15 | 2021-09-01 | 南韓商新韓鑽石工業股份有限公司 | Cmp pad conditioner and method for manufacturing the same |
TWI823456B (en) * | 2022-07-01 | 2023-11-21 | 詠巨科技有限公司 | Conditioning assembly, manufacturing method thereof, and assembled conditioner using the same |
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