TWI306048B - - Google Patents

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TWI306048B
TWI306048B TW94133718A TW94133718A TWI306048B TW I306048 B TWI306048 B TW I306048B TW 94133718 A TW94133718 A TW 94133718A TW 94133718 A TW94133718 A TW 94133718A TW I306048 B TWI306048 B TW I306048B
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Taiwan
Prior art keywords
dresser
superabrasive
chemical mechanical
substrate
mechanical polishing
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TW94133718A
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Chinese (zh)
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TW200621430A (en
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Chien Min Sung
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Chien Min Sung
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  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

、1306048九、發明說明, 1306048 nine, invention description

【發明所屬之技術領域】 本發明係關於-種用力修整或加工化學機械抛光塾的 裝置及方法。因此,本發明涉及化學及材料領域。 【先前技術】 化學機械製程(chemical mechanicai pr〇cess,CMp) 已成為用來研磨工件的常用技術手段,尤其是在電腦製造BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for hardening or processing a chemical mechanical polishing crucible. Accordingly, the present invention relates to the fields of chemistry and materials. [Previous technology] Chemical mechanicai pr〇cess (CMp) has become a common technical means for grinding workpieces, especially in computer manufacturing.

,上,開始相當倚賴⑶p製程來研磨晶圓,該晶圓為陶製 〇σ矽、玻璃、石英及其他金屬所組成,此等研磨的製程 :般將晶圓設於一旋轉的拋光墊上’該拋光墊由耐用的含 石反材料(例如聚氨脂,p〇lyure1;hane)所製成,該拋光墊上 設有—層能破壞晶圓材料的化學研磨液(chemicai slurry),並設有相當數量的磨纟,該磨粒係於晶圓表面 侵姓製成,將該化學研磨液設於一旋轉的CMp拋光塾上, 則施加於晶圓上之化學及機械的力量,將該晶圓以所需的 方式研磨。At the beginning, it relies heavily on the (3)p process to polish the wafer. The wafer consists of ceramic 〇σ矽, glass, quartz, and other metals. These grinding processes: the wafer is placed on a rotating polishing pad. The polishing pad is made of a durable stone-containing anti-material (such as polyurethane, p〇lyure1; hane), which is provided with a layer of chemical chemicai slurry capable of destroying the wafer material and is provided with equivalent The amount of honing, which is made by invading the surface of the wafer, placing the chemical slurry on a rotating CMp polishing crucible, applying the chemical and mechanical forces on the wafer to the wafer Grind in the desired manner.

/磨粒在拋光塾上的分佈是達成研H的關鍵點,抛 光墊的頂部通常藉由增加摩擦力的結構“列如纖维組織、 或孔隙)來有效的抓持磨粒,以有效避免因拋光塾旋轉時 的離心力而被拋_光塾’因此,儘可能使拋光塾的頂部 柔動及儘可能使纖维組織直立、或使開口與孔隙數量充裕 以容納新的磨粒,是相當重要的。 來自工件、研磨液、及加工盤之研磨碎片的堆積’造 成維持抛光塾頂部的卩彳 的問蟪,该堆積物使拋光墊頂部平滑戒 5 1306048 r-~—- 月^j修(吏)正替換頁j 硬化,並使纖維纏繞在一起,則使得拋光墊較不能抓持研 磨液中的磨粒,且降低拋光墊的研磨效果,因此,藉由各 式各樣的裝置,以”梳洗,,或”切削,,的方式,來還原拋光墊 頂部,該過程稱之為,,加工”或,,處理”CMp拋光墊,該目的 可使用泎夕種裝置及製程來完成之,其中一裝置是其上具 有複數個極硬結晶磨粒的盤體,例如依附在一平面或一基 板的鑽石磨粒。/The distribution of abrasive grains on the polished crucible is the key point to achieve the research H. The top of the polishing pad is usually effectively grasped by the friction-increasing structure "column such as fiber structure, or pores" to effectively avoid the abrasive particles. It is thrown by the centrifugal force when the polishing crucible rotates. Therefore, it is equivalent to make the top of the polishing crucible as soft as possible and to make the fiber structure stand upright as much as possible, or to make the opening and the number of pores sufficient to accommodate new abrasive grains. Important. The accumulation of abrasive fragments from the workpiece, the slurry, and the processing disk 'causes the maintenance of the top of the polishing crucible, which makes the top of the polishing pad smooth. 5 1306048 r-~--月^j (吏) is replacing the page j to harden and wrap the fibers together, so that the polishing pad is less able to grasp the abrasive grains in the polishing liquid and reduce the polishing effect of the polishing pad, and therefore, by various devices, To "rewash," or "cut," to restore the top of the polishing pad, the process is called, processing, or, processing "CMp polishing pad, which can be accomplished using a device and process." One of the devices is A disk having a plurality of extremely hard crystalline abrasive grains thereon, such as diamond abrasive particles attached to a flat surface or a substrate.

現有技術的CMP修整器的另一個缺點為減少了 CMp拋 光墊之調即益的哥命,如前所述,當磨粒過於深入切削及 消耗拋光墊時,磨粒和⑽誠塾會過早耗損殆盡,該過 早:耗損降低了 CMP修整器能有效拋光工件的能力,理想 狀恕下,磨粒對CMP拋光墊的粗糙處產生再拋光的效果, 而能提供理想的拖光環境。 "CMP拋光墊時的速率會影響拋光墊表面的平整 度’其決疋了維持在表面上的研磨液數量,因此而影響了Another disadvantage of the prior art CMP conditioner is that it reduces the weight of the CMp polishing pad. As mentioned above, when the abrasive grains are too deep to cut and consume the polishing pad, the abrasive grains and (10) are too early. Depletion, premature: Loss reduces the ability of the CMP dresser to effectively polish the workpiece. Ideally, the abrasive grain re-polishs the roughness of the CMP pad while providing the ideal drag environment. "The rate at which the CMP pad is affected affects the flatness of the surface of the pad' which limits the amount of slurry that is maintained on the surface, thus affecting

也光的速率,—般*言’晶®的拋光速率與修整速率成比 例’然而’若修整速率太 千双陕拋先墊的表面會過於粗糙,The rate of light, as well as the polishing rate of the crystal, is proportional to the dressing rate. However, if the trimming rate is too high, the surface of the pad will be too rough.

而因此降低晶圓的平辱P •"度最有效的修整速率可增加拋光 速率,且不影響晶圓的品質。 =上所述,本發明的目的為獲得―⑽修整器及方法, 其月匕為了達到理相修敕4田 心如整效果而控制修整表現’並星 的效果及最長的使用壽命。 I/、有最好 【發明内容】 本發明提供了 — 種用以控制 CMP修整器效果的方法及 6 1306048 CMP修整g的形態’另提供—⑽修整器,其使用複數個 超級磨粒’每一磨粒與一基板連結且定位成一高度,該高 度提供了預先的效果特性以作為CMp修整器的製造效果, 本發明之預先的效果特性可使修整速率及修整損耗理想 化此外β亥預先的效果特性更可使修整速率及修整損耗 達到理想的平衡’藉由將超級磨粒預先排列為預設的圖樣 或高度,以增進及理想化修整速率及修整器磨耗,此外, 使用成型為預設f高度的超級磨粒之方法,可用以控制伊整 _ 器的效果特性。 本發明之方法係提供一基板’而後設置複數個超級磨 粒於基板上,該超級磨粒設置為一高度,該高度係提供理 想的修整特性,超級磨粒可被實質上設置為一高度,該高 度係實質上具有尖端部份,該尖端部份成型為朝向欲被修 整之拋光墊的’此外,該超級磨粒成型為一高《,該高度 具有-稜線部份或-表面部分,該稜線或表面部分成型為 朝向欲被修整之拋光塾,該等設置可改變修整器的效果特 •性,而得到具有理想修整速率及修整損耗之修整器。 位於中央部位的超級磨粒設為具有尖端部位的高度, 該尖端部位成型為朝向欲被修整的拋光塾,且位於棱線部 位的超級磨粒以特定高度暴露於基板或表面上,該高度係 具有一表面或稜線部位朝向欲被修整的拋光墊,多樣化的 ,置可於⑽㈤光墊上成型出不平滑的多樣圖樣,該圖樣 錯由提供增加晶圓研磨速率並減少磨粒磨耗的表面粗縫, 以提供修整器多樣化的效果’舉例而言,藉由將中央磨粒 1306048 成型為尖端部份、將週緣磨粒成型為平面、並將位於兩者 門的磨粒成型為稜線高度且朝向拋光塾, 速率及修整器的磨耗理想化。 "的 人本發明另係為一使修整器效果理想化的方法,其可包 ^有一 CMP修整器,該修整器具有複數個分別設置於中央 部位及週緣部位的超級磨粒,中央部位的磨粒相較於週緣 卩位的磨粒具有較低的品質,該較低的品質可為各種不同 ^特]·生舉例而§,.較低的内部品質、較低的形狀品質等, 當磨粒具有較低的形狀品質’例如為不規則的形狀時,相 較於其他形狀的磨粒而言,可對撤光塾產生叫具有侵略性 的修l效果,然而,由於其斜向地切削及破壞,故較低品 質的磨粒具有較慢的修整速率,另一方面而言,較高的形 、貝例如八面體或立方體,其侵略性較低,但其較為 耐久並允許較快的修整速率,該耐久度協助保護内部或中 央的磨粒使其不受過度的磨耗,因此,於修整器中央設有 。口貝較低的磨粒、且於週緣設有品質較高的磨粒,可使得 _修整速率及修整器磨耗取得平衡。 為了達到上述的使用方法,本發明亦包含了製造cMp 修整益的方法,該修整器係藉由將超級磨粒成型為預設圖 樣而得到理想化的修整效果,一般而言,該方法包含有提 供一基板、選擇超級磨粒的設置高度以提供預先的效果特 性、設置超級磨粒於基板上、且將超級磨粒以選定的高度 固定於基板上。 藉由上述的方法,本發明之Cmp修整器具有數個優點, 1306048 舉例而5,CMP拋光墊的的修整效果可受控制,以將cMp 抛光墊的修整速率及修整器磨耗理想化,該理想化的效果 使得修整器磨耗和修整速率取得平衡,因此在使修整器用 以修整拋光墊之速率最大化的條件下,得以延長修整器的 使用壽命。 月J述之本發明的技術特徵和優點,於之後的實施方式 中將會配合圖式詳細的說明之。 【實施方式】 • 在揭露及描述本發明之CMp修整器及其相關方法之 月’J,需了解本發明並非侷限於以下揭露之特定的方法步驟 及材料,而其延伸至所屬技術領域中等效的相關技術,同 時在此使用的專有名詞,僅用以描述特定實施例,而非用 以作為限制條件。 再者,除非文中另有指示,否則在說明書及申請專利 範圍中所使用之單數形式將包含複數的指示物,因此,舉 例而言,”一磨粒”或,,一,,砂粒,,包含一個或多個該磨粒或砂 _粒。 定義 描述及主張本發明時,以下的專有名詞用於以下所述 的定義。 在此所述的”超級磨粒,,以及,,超級磨料砂粒,,可交替使 用,並意指磨粒由非人造或人造鑽石、最硬結晶體、多晶 材料、或混合材料所組成,且並不僅包含鑽石、多晶鑽石 (PCD)、立方氮化硼(CBN)、多晶立方氮化硼(PCBN),此外,” 9 1306048 磨粒,,、”砂粒,,、”鑽石”、”多晶鑽石”、,,硼氮化合物,,及” 多晶硼氮化合物,,可交替使用。 在此所述的,,極硬,,和超級磨料,,可交替使用,並咅指結 晶或多晶材料、或混合材料、且其材料具有維氏硬 40 00kg/mm2,該材料可包含但不限制於鑽石、立方氮化硼、 並可為所屬技術領域中具有通常知識者所知的材料,當超 級磨料為不活化且難以形成化學鍵結時,則特定的活潑^ 料例如鉻或鈦,於特定溫度下能與該超級磨料產生化學反 籲應。 在此所述的,,基板”,意指CMP修整器的一部份,該部 •份用來支撐磨粒,且為磨粒固設之處,本發明之基板可為 _ 何形狀、厚度、或材質,其以—方式而具有支撐磨粒的 能力,該方式能有效提供欲達成功效的工具,基板可由堅 固的材料組成、由製程中形成堅固物的粉狀材料組成、或 由具有彈性的材料組成,典型的基板材料範例不具限制的 包含金屬、金屬合金、陶製品、及其混合物,此外基板可 •包含焊接合金材料。 在此所述的”導引邊緣”,意指CMP修整器的邊緣,該 邊緣為CMP拋光墊運動時位於運動方向前方的邊緣、或為 CMP抛光塾運動的方向,在某些情況下,該導引邊緣可視 為不”包括修整器的邊緣,同時亦包括由修整器上該邊緣 么二u向内延伸的部位,導引邊緣可視為c肝修整器外侧邊 表CMP七1器可成型有為—圖樣的磨粒,該磨粒提供cMp '1器之工作表面的中央或在内部位至少一有效導引邊 10 1306048 緣,換句話說,修整器的中 _ ,, ^ , Λμ 次在内部位可提供一結構, 遠結構之功效於修整器外緣的導引邊緣。 在此所述的,,尖銳部位,,, #曰任何位於結晶體狹窄的 邛位,包含但不侷限於角落、 其他凸部。 稜線、方尖部位、及 在此所述的,,中央部位磨粒,,, ^ ™ ^ ± 忍私在一般加工環境下 的知:,上,相較於外圍磨粒而言,承受到較少負載的磨 粒,中央或”位於中央,,意指修整g & L , ^蹩态上的特定區域,該區 域由修整器之中心點向修整器 您緣延伸,該區域可大約 佔修整^9_範圍' 或該區域可大料修整器之.Therefore, reducing the wafer's insult P •" degree of the most effective trim rate can increase the polishing rate without affecting the quality of the wafer. = As described above, the object of the present invention is to obtain a "(10) dresser and method, which has the effect of controlling the trimming performance and the longest service life in order to achieve the rational effect of repairing the body. I /, have the best [invention] The present invention provides a method for controlling the effect of the CMP dresser and the form of 6 1306048 CMP dressing g 'further provided - (10) dresser, which uses a plurality of super abrasive grains 'per An abrasive grain is coupled to a substrate and positioned to a height which provides a prior effect characteristic as a manufacturing effect of the CMp dresser. The prior effect characteristics of the present invention can optimize the trimming rate and the trimming loss. The effect characteristics make the dressing rate and dressing loss ideally balanced' by pre-arranging superabrasive grains into preset patterns or heights to enhance and idealize dressing rate and dresser wear. In addition, use molding as a preset The method of f-high super-abrasive grain can be used to control the effect characteristics of the yttrium. The method of the present invention provides a substrate 'and then a plurality of superabrasive grains are disposed on the substrate. The superabrasive particles are set to a height which provides ideal trimming characteristics, and the superabrasive particles can be substantially set to a height. The height has substantially a tip portion that is shaped to face the polishing pad to be trimmed. Further, the superabrasive grain is formed into a high height, and the height has a - ridge portion or a surface portion. The ridgeline or surface portion is shaped to face the polished enamel to be trimmed, and these settings change the effect of the finisher to provide a trimmer with an ideal trim rate and trim loss. The superabrasive in the central portion is set to have a height of a tip portion which is formed to face the polishing crucible to be trimmed, and the superabrasive particles located at the ridge line are exposed to the substrate or surface at a specific height, the height system With a surface or ridge line facing the polishing pad to be trimmed, a variety of patterns can be formed on the (10) (five) light pad, which is provided by a rough surface that provides increased wafer polishing rate and reduced abrasive wear. To provide a versatile effect of the trimmer', for example, by forming the central abrasive grain 1306048 into a tip portion, forming the peripheral abrasive grain into a flat surface, and molding the abrasive grains located at both gates into a ridge height and Towards the polishing 塾, the rate and dresser wear are ideal. The present invention is another method for idealizing the effect of the dresser, which may include a CMP dresser having a plurality of super abrasive grains respectively disposed at the central portion and the peripheral portion, the central portion The abrasive grain has lower quality than the abrasive grain of the circumferential edge. The lower quality can be exemplified by various stipulations, §, lower internal quality, lower shape quality, etc. The abrasive grain has a lower shape quality, for example, when it is an irregular shape, it can produce an aggressive repair effect on the light-removing raft compared to other shapes of abrasive grains, however, due to its oblique orientation Cutting and breaking, so lower quality abrasive grains have a slower dressing rate. On the other hand, higher shapes, shells such as octahedrons or cubes are less aggressive, but they are more durable and allow for comparison. A fast dressing rate that assists in protecting the internal or central abrasive particles from excessive wear and, therefore, is provided in the center of the dresser. The lower-grained abrasive grains and the high-quality abrasive grains on the periphery ensure a balance between the dressing rate and the dresser wear. In order to achieve the above-described method of use, the present invention also includes a method of manufacturing a cMp trimming effect which is obtained by forming a superabrasive grain into a predetermined pattern to obtain an ideal trimming effect. Generally, the method includes A substrate is provided, the set height of the superabrasive particles is selected to provide pre-effect characteristics, the superabrasive particles are placed on the substrate, and the superabrasive particles are fixed to the substrate at a selected height. By the above method, the Cmp dresser of the present invention has several advantages, 1306048 and 5, the finishing effect of the CMP polishing pad can be controlled to idealize the dressing rate of the cMp polishing pad and the dresser wear, which is idealized. The effect is to balance the dresser wear and dressing rate, thus extending the life of the dresser while maximizing the rate at which the dresser is used to trim the polishing pad. The technical features and advantages of the present invention will be described in detail in the following embodiments. [Embodiment] In the disclosure of the CMp dresser of the present invention and related methods, it is to be understood that the present invention is not limited to the specific method steps and materials disclosed below, but extends to the equivalent of the technical field. The related art, while using the proper terminology, is used to describe a particular embodiment, and is not intended to be a limitation. In addition, the singular forms used in the specification and claims are intended to include the plural referents, and, by way of example,,,,,,,,,,,,,,,, One or more of the abrasive grains or sand particles. Definitions In describing and claiming the present invention, the following proper nouns are used in the definitions described below. As used herein, "superabrasive grains, and, superabrasive grit," are used interchangeably and mean that the abrasive particles are composed of non-artificial or synthetic diamonds, hardest crystals, polycrystalline materials, or hybrid materials, and It includes not only diamonds, polycrystalline diamonds (PCD), cubic boron nitride (CBN), polycrystalline cubic boron nitride (PCBN), but also, "9 1306048 abrasive grains,", "sand,", "diamonds", Polycrystalline diamonds,,, boron-nitrogen compounds, and "polycrystalline boron-nitrogen compounds," can be used interchangeably. As used herein, it is extremely hard, and superabrasive, can be used interchangeably, and refers to a crystalline or polycrystalline material, or a mixed material, and the material thereof has a Vickers hardness of 40 00 kg/mm2, which may include Without limitation to diamonds, cubic boron nitride, and materials known to those of ordinary skill in the art, when superabrasives are inactivated and difficult to form chemical bonds, then particular reactive materials such as chromium or titanium, It can produce chemical reaction with the superabrasive at a specific temperature. As used herein, "substrate" means a portion of a CMP conditioner that is used to support abrasive particles and where the abrasive particles are fixed, the substrate of the present invention may be shaped and thicknessed. Or a material that has the ability to support abrasive particles in a manner that effectively provides a tool for achieving an effect. The substrate may be composed of a strong material, a powdery material that forms a solid in the process, or has elasticity. The material composition, typical examples of substrate materials include metals, metal alloys, ceramics, and mixtures thereof, and the substrate may include a solder alloy material. The "guide edge" as used herein means a CMP conditioner. The edge is the edge in front of the moving direction of the CMP pad, or the direction in which the CMP polishing pad moves. In some cases, the leading edge may be considered as not including the edge of the trimmer, but also includes The portion of the edge of the dresser that extends inwardly from the edge of the dresser can be regarded as the outer side of the c-health trimmer. The CMP can be formed into a pattern-like abrasive grain, and the abrasive grain provides cMp '1 At least one effective guiding edge 10 1306048 edge of the center or inner portion of the working surface, in other words, the _, ^, Λμ times of the trimmer can provide a structure in the inner portion, and the far structure function is outside the trimmer The leading edge of the edge. As used herein, the sharp portion, #曰, any niche located in the narrow body of the crystal, including but not limited to corners, other convex portions. The ridgeline, the apex portion, and the central portion of the abrasive grains, as described herein, ^ ^ ^ ^ 私 在 in the general processing environment know: upper, compared to the peripheral abrasive particles, to withstand Less loaded abrasive particles, central or "central", means a specific area on the g & L, ^ 蹩 state, which extends from the center point of the dresser to the trimmer, which can be approximately Trimming ^9_range' or the area can be an oversize trimmer.

_的範圍、或該區域可大約佔修整器之咖的範圍、或今 區域可大約佔修整器之33%的範圍。 A 在此所述的,,位於外圍的 '意指在一般加工環 修整器上’相較於中央部位的磨粒而t,承受到較多負載 的磨粒,,’週緣的,,、”外圍的,,或,’位於外圍,,意指修整器上 的特定區域’肖區域由修整器之導引邊緣或 修整器之中心延伸,該區域可大㈣修整器之咖的^向 或該區域可大約佔修整器之勝9_範圍、或該區 大約站修整器t 50%的範圍、或該區域可大約佔修 33%的範圍(於中心的66%範圍之外)。 在此所述的,,工作端點,’,意指練的端點,該磨粒朝 向CMP拋光墊定位之’且於加工製程中,該端點與_抛 光墊接觸,一般而言,磨粒的工作端點為其距離與基 接之最遠的一端。 11 1306048 在此所述的°σ質”意指優良的程度’超級磨粒的每一 、徵或特性’例如内部結晶完整度、形狀等等,皆可用來 作為決定磨粒品質的碑淮 ^ 貞的榇準,鑽石及其他超級磨料具The range of _, or the area may be approximately the range of the trimmer's coffee, or the current area may be approximately 33% of the trimmer. A. As used herein, the term 'external' means 'on the general processing ring dresser' compared to the central part of the abrasive grain and t, which is subjected to more load of abrasive particles, 'peripheral,,," Peripheral, or, 'located on the periphery, means a specific area on the dresser'. The shawched area extends from the leading edge of the dresser or the center of the dresser, which can be large (4) or The area may occupy approximately 9_ of the dresser, or approximately 50% of the station's trimmer t, or the area may cover approximately 33% of the range (out of 66% of the center). As described herein, the working end, ', means the end point of the training, the abrasive grain is positioned toward the CMP polishing pad' and in the processing process, the end point is in contact with the _ polishing pad, in general, the abrasive grain The working end point is the end furthest from the base. 11 1306048 "°σ" as used herein means the degree of excellence 'each, sign or characteristic of superabrasive grains' such as internal crystal integrity, Shapes, etc., can be used as a basis for determining the quality of abrasive grains. Super abrasive tool

既有的品質量产,々,丨Λ S ^ 1U 、里度例如美國寶石協會(GIA)制定的鑽石等 級報告或稱為GIA晋许,匕® u _丄 又此為所屬技術中具有通常知識者 所熟知。 在此所述的”非址曰@ ,, ^ 非、、,。阳坏接’意指具有非結晶體結構的 V同質性焊接成分,該合金且右非丘a雜知& ^ • 备八有非共晶體相位,其加孰炫化 »時非一致,既然難以確定確切的合金成分,在此使用之非 結晶焊接合金,應視為在有限的溫度範圍内呈現出一致性 熔化狀態。 在此所述之合金,意指一金屬與另一材料之固態或 液態混合’該材料可為非金屬,例如碳,或為一金屬:或 為一可增進或改良該金屬性質的合金。 在此所述的’’金屬焊接合金”、,,焊接合金,,、及,,焊接材 料”,可交替使用,並意指可用於與超級磨粒、與支撐材料、 鲁或與基材、形成化學鍵結的金屬合金,以使兩者穩固結合, 在此揭露之特定的焊接合金之成份與組成物,並非侷限用 於與其同時揭露的特定實施例,並可用於本發明所揭露之 任何其他的實施例中。 在此所述的”焊接,,製程,意指於超級磨粒之碳原子及 ¥接材料間形成化學鍵結,此外,”化學鍵結,,意指共價鍵 結,例如碳化物或硼化物鍵結,而非以機械力或較弱的原 子間吸引力,因此,當,,焊接,,超級磨粒時,會形成真正的 12 1306048 化學鍵結1而’當—般提到,,焊接,,金屬時,是意指形成 冶金鍵結,故焊接超級磨粒於—工件時,不須先提 物形成。 於焊接製程中,在此所述的,,直接,,意指藉由單一焊接 材料或合金,而欲使超級磨粒與材料間形成化學鍵结。 在此所述的,,陶製品,,,意'指堅硬、一般為結晶°狀、且 本質上财熱及耐侵蝕的材料’並可由燒製一非金屬材料而 製減,有時可添加含金屬材料,纟此技_域巾m 化物、氮化物、及碳化物材料可視為陶製品,包含有但不 偈限於以下所舉的例子中,例如氧化銘、氧化石夕、氮化石朋、 氮化矽、碳化矽、碳化鎢等等。 在此所述的,,含有金屬的,,,意指各種金屬、合金、或 其混合物’且特指包含但不侷限於鋼、鐵、及不鏽鋼/ 在此所述的,,格柵,,,意指線成型為複數個方型的圖樣。 在此所述的針對距離及大小所述的,,一 双,思指該尺 寸間差異大約小於75微米。 在此所述的”高度,,係指超級磨粒設置該表面上的位置 及排列,該表面例如所固設的基板、或於製程中的拋 光墊,舉例而言,一超級磨粒可成型具有 一另笱疋部分之高度 並朝向CMP抛光整。 在此所述的”工作端點”,意指磨粒的 j鳊點,该磨粒朝 向CMP拋光墊定位之’且於加工製程中, "亥金而點與CMP抛 光塾接觸,一般而言,磨粒的工作端Κ 朴鳊點為其距離與基板相 接之最遠的一端。 13 1306048 在此所述的複數種類、結構元件、組合元件或材料, 將會列舉出-般常見的清單,然而,該清單中的每—部分 應被視為彼此獨立且獨特的部分,因此,當以同— 現且未指出其分別時,清 π皁中的任一部分仍不可視為與清 單中其他部分相等。 〃 濃度、總數、及其他的數據值在此以範圍值表現,以 範圍值表現僅僅是為了方便且縮短欲表現的數值,所以應 對此數值範圍彈性解釋,不應僅包含該數值細,若有列 舉出該單-數值及其中的數值範圍時,則應同時包含該範 圍中所有的單一數值或包含其中的數值範圍。舉例而言, -數值範圍”大約1微米到5微米' 應解釋為不僅包含大 約1到5微米間,而同時包含該範圍中所有的單一數值或 包含其中的數值範圍,因此,該數值範圍的表現也同時包 含例如2、3、4等單—數值,以及1-3、2〜4、3-5等介於 其中的數值範圍。 同樣的原則運用於僅舉出一單一數值時,進一步而 3 ’不論該範圍的廣度或所描述的特徵為何, 釋意原則。 本發明 本發明提供-種裝置及方法,係藉由eMp修整器上^ 有的超級磨粒以使修整效果理想化,藉由以特定高度設= 該等磨粒’而控制修整速率及修整器磨耗,在维持=的 CMP抛光塾之修整速率的條件下,藉由增加修整器之超級 磨粒的壽命及CMP拋光墊的使用壽命之高度來使得效果理 14 1306048 想化。 第一圖為本發明之CMP修整器的第一實施例,cmp調 即為(100)包含有一實質平坦的基板(1〇1),其 上設有複數個超級磨粒(]_ i 〇 )(丄2 〇 )(工3 〇 ), 每一超級磨粒以特定高度設置,該高度提供所欲得到的工 作。P位,例如尖端、稜線或平面,用以在修整過程中與C肝 抛光塾相接觸。Existing quality products, 々, 丨Λ S ^ 1U, Ride, such as the Gemological Association of America (GIA) developed a diamond grade report or called GIA Jin, 匕® u _ 丄 and this is the usual knowledge in the technology Well known. As used herein, "non-address ,@ , , ^ 非 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , There is a non-eutectic phase, which is non-uniform when it is added. Since it is difficult to determine the exact alloy composition, the amorphous alloy used here should be considered to exhibit a consistent melting state over a limited temperature range. The alloy described herein means a solid or liquid mixture of a metal with another material. The material may be a non-metal, such as carbon, or a metal: or an alloy that enhances or improves the properties of the metal. The ''metal welding alloy',, welding alloy, and/or, welding material" may be used interchangeably, and means that it can be used to form chemical bonds with superabrasive particles, with supporting materials, lu or with substrates. The metal alloy of the junction is such that the two are firmly bonded. The components and compositions of the particular solder alloy disclosed herein are not intended to be limited to the particular embodiments disclosed herein, and may be used in any other embodiment disclosed herein. In the example, "welding, process" means forming a chemical bond between a carbon atom of a superabrasive particle and a material of a bond, and further, "chemical bonding," means covalent bonding, such as carbide. Or a boride bond, rather than a mechanical force or a weaker interatomic attraction, so when, when, welding, superabrasive, a true 12 1306048 chemical bond 1 is formed and 'as it is mentioned, , welding, metal, is meant to form a metallurgical bond, so when welding superabrasive grains to the workpiece, it is not necessary to first extract the material. In the welding process, as described herein, directly, means borrowing From a single welding material or alloy, and to form a chemical bond between the superabrasive particles and the material. As used herein, ceramics, meaning, meaning hard, generally crystalline, and inherently rich in heat and resistance The eroded material 'can be reduced by firing a non-metallic material, and sometimes a metal-containing material can be added, and the material, the nitride, and the carbide material can be regarded as ceramics, including but not Limited to the examples given below, such as oxidation Oxide oxide, nitrite, tantalum nitride, tantalum carbide, tungsten carbide, etc. As used herein, metal-containing, meaning various metals, alloys, or mixtures thereof, and specifically includes but not Limited to steel, iron, and stainless steel / as described herein, the grid, means that the wire is formed into a plurality of square patterns. As described herein, for the distance and size, a pair, thinking Means that the difference between the dimensions is less than about 75 microns. The term "height" as used herein refers to the position and arrangement of superabrasive particles on the surface, such as a fixed substrate, or a polishing pad in a process. For example, a superabrasive grain can be formed to have a height of a further portion and polished toward the CMP. As used herein, "working end point" means the point of the abrasive particles, which is oriented toward the CMP pad and is in contact with the CMP polishing pad during processing. In other words, the working end of the abrasive grain is the farthest end from the substrate. 13 1306048 The plural categories, structural elements, composite elements or materials described herein will list a common list, however, each part of the list should be considered as a separate and unique part, therefore, When the same is present and the difference is not indicated, any part of the soap should not be considered equal to the rest of the list.浓度 Concentration, total, and other data values are expressed here in range values. The range values are expressed only for convenience and shorten the value to be expressed. Therefore, the numerical range should be explained flexibly. It should not only contain the value, if When the singular value and the numerical range thereof are recited, all the singular values of the For example, a value range "about 1 micrometer to 5 micrometers" should be interpreted to include not only between about 1 and 5 micrometers, but also all single values in the range or ranges of values contained therein, and therefore, the range of values The performance also includes single-value values such as 2, 3, 4, and numerical ranges in which 1-3, 2~4, 3-5, etc. are used. The same principle applies to only a single numerical value, and further 3 ' Regardless of the breadth of the range or the characteristics described, the principle of interpretation. The present invention provides a device and method for optimizing the dressing effect by using super abrasive particles on the eMp dresser. By adjusting the dressing rate and dresser wear at a specific height = the abrasive grains, by maintaining the dressing rate of the CMP polishing =, by increasing the life of the superabrasive of the dresser and the CMP pad The height of the service life makes the effect 14 146048. The first figure is the first embodiment of the CMP conditioner of the present invention, and the cmp tone is (100) comprising a substantially flat substrate (1〇1) on which Have multiple Grade abrasive grains (] _ i 〇) (丄2 〇) (Work 3 〇), each super abrasive grain is set at a specific height, which provides the desired work. P-position, such as tip, ridgeline or plane, In contact with the C-healed sputum during the dressing process.

修整器的磨耗及CMP拋光墊的修整速率兩者的理想化 係取决於數個因素’其中包括超級磨粒的設置高度,在本 發明中,可用數種不同的超級磨粒設置,該材料包含但不 卿以下所列材料,例如多晶鑽石、立方氮化侧、及多 晶立方氮化硼’超級磨粒另可包含有鑽石,該鑽石超級磨 粒可以立方及八面體的組合形狀呈現,此外,超級磨粒可 設有預設的㈣,舉例而言,超級隸可為自然晶、八面 :狀或立方及八面的混合形狀,雖然幾乎任何形狀的超級 磨粒皆視為本發明所保護的範圍巾,但該磨粒的大小可介 於大約1 00-350微米之間,又超級磨 向許多方向設置,但有三種最光墊朝 文07 °又置向度,直可影塑 磨粒切削或修整的效果,i 、 的瓿 文果°亥“度為超級磨粒朝向欲修整 的CMP拖先塾設置為尖端、稜線或平面。 將超級磨粒相對於CMp拋光墊設置 得拋光墊表面成型出不同的平整产,因 回又, 墊的畤罢,X F! A 又因此改變了 CMP拋光 研磨石”圓時::虔平整度能保留研磨液的程度不同,因此 圓爾不同的深度、寬度及密度等形成不同的 15 1306048 研磨效果,窄及深的平整度所具有的優點,為使得拋光塾 較能保留研磨液,因此可增加晶圓的研磨速率,然而,增 加研磨速率可能增加超級磨粒的磨耗速率,因此,磨耗速 率受超級磨粒設置高度的影響很大,則當設計—具有所欲 效果特性的裝置時,每一超級磨粒的設置高度都必須加以 考慮’-般而f ’能提供較高修整速率之高度的超級磨粒 (亦即較深入穿透拋光墊),其亦以較高的速率磨耗磨粒。 相反的 > 若超級磨粒朝向拋光墊成型為平面,其,會造 成較慢的研磨速率,磨粒的平面一般較為耐久,但於 抛光塾上切割出較深且窄的表面,但會被成型為淺且廣的 表面,因&,相較於磨粒的尖端部份,磨粒的平面部份以 較慢的速率雜⑽拋㈣,但該超級練讀慢的速率 磨粒之稜線部份之修整及磨&的特性介於平面及 尖端部份,若使用稜線部份修整CMp拋光墊,其表面不如 尖端部份所成型之表面來的深或f,但可提供較中等特性° 的表面’此外’磨粒㈣線部份之磨耗 ::耗速率,因此,使用全部具有或部分具有棱線= 超級磨粒的CMP修整器係提供數個優點。 請參閲第—圖所示,複數個基板( 磨粒以不同的高度設置,該等高度可包含有^水超級 粒Γ 1 η η、、 门又·1匕3有如中央部位磨 )成型為朝向拋光墊之尖端部分、及磨粒(丄 成型為朝向拋光墊之稜線部份、或如外圍磨粒(丄 成型為朝向拋光#之平面料,本發明之該實施例 16 1306048 ==時修整速率及修整器磨耗的優點,該設置使 二中央磨粒有較具侵略性的修整特性’則外圍磨粒可較為 耐久且向内設置、同時中央磨粒可避免過度磨耗。 本發明之第二實施例如第二圖所示,CMP修 :二具有複數個設置於基板(101…超級磨粒, :央的超級磨,(11〇)成型為尖端部份朝向拋光 4/而其餘的超級磨粒(1 3 0)成型為平面部分朝向拋 光墊。 ' iThe idealization of both the wear of the dresser and the dressing rate of the CMP pad depends on several factors 'including the set height of the superabrasive particles, which in the present invention can be set with several different superabrasives, the material comprising However, the materials listed below, such as polycrystalline diamond, cubic nitride side, and polycrystalline cubic boron nitride 'superabrasive grains, may also contain diamonds. The diamond superabrasive grains can be presented in a combination of cubic and octahedral shapes. In addition, the superabrasive particles may be provided with a preset (four). For example, the super-grain may be a natural crystal, an eight-sided: a cubic or a cubic and an eight-sided mixed shape, although almost any shape of the superabrasive is regarded as The scope of the invention is protected, but the size of the abrasive particles can be between about 100-350 micrometers, and the super-grinding is set in many directions, but there are three kinds of the most optical mats facing the text 07° and the orientation is straight. The effect of the cutting or dressing of the shadow-shaped abrasive grain, the degree of the i 为 “ “ “ “ “ “ “ “ “ “ “ “ “ “ 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 超级 CMP CMP CMP Polished mat surface Different types of flat production, because of the back, the mat of the mat, XF! A has thus changed the CMP polishing grinding stone "circle:: 虔 flatness can retain the degree of the slurry is different, so the different depths of the round, Width and density form different 15 1306048 grinding effects, narrow and deep flatness has the advantage that the polishing enamel can retain the polishing liquid, thus increasing the polishing rate of the wafer, however, increasing the grinding rate may increase the super The wear rate of the abrasive particles, therefore, the wear rate is greatly affected by the height of the superabrasive particles. When designing a device with the desired effect characteristics, the height of each superabrasive grain must be considered. f 'can provide a high degree of dressing rate at the height of the superabrasive (ie, deeper penetration of the polishing pad), which also wears the abrasive particles at a higher rate. Conversely, if the superabrasive grains are formed into a flat surface toward the polishing pad, it will result in a slower polishing rate. The plane of the abrasive grains is generally more durable, but a deeper and narrower surface is cut on the polishing crucible, but will be Formed into a shallow and wide surface, due to &, compared to the tip portion of the abrasive grain, the plane portion of the abrasive grain is thrown at a slower rate (10) (four), but the super-reading slow rate of abrasive grain ridgeline Part of the trimming and grinding & characteristics are between the flat and tip portions. If the CMp polishing pad is trimmed with a ridgeline, the surface is not as deep or f as the surface formed by the tip portion, but provides a more moderate characteristic. The surface of the 'other' abrasive grain (four) wire portion wear: consumption rate, therefore, the use of all or part of the CMP dresser with ridgeline = super abrasive grain provides several advantages. Please refer to the figure - figure, a plurality of substrates (the abrasive grains are set at different heights, and the heights may include a water super-grain 1 η η, a door and a 1 匕 3 as a central part grinding) Towards the tip end portion of the polishing pad, and the abrasive particles (formed to be the ridgeline portion toward the polishing pad, or as a peripheral abrasive grain (formed as a planar material toward the polishing #, this embodiment 16 of the present invention is trimmed at 1306048 ==) The advantage of rate and dresser wear, which provides a more aggressive trimming characteristic for the two central abrasive particles', then the peripheral abrasive particles can be more durable and set inward while the central abrasive particles can avoid excessive wear. The implementation is as shown in the second figure, the CMP repair: two have a plurality of substrates disposed on the substrate (101... superabrasive, : the central super-grind, (11〇) is formed into the tip portion toward the polishing 4 / while the remaining super abrasive particles (1 3 0) is formed into a flat portion facing the polishing pad. ' i

第三圖為本發明之第三實施例,其中CMP修整器(3 0 0 )具有複數個設於基板(!0 i)上的超級磨粒,其 中位於中央的超級磨粒(11〇)成型為尖端部份朝向拋 光塾’而其餘超級磨粒(12 0)成型為稜線部份朝向抛 光墊。 如第四圖所示為本發明之第四實施例,CMP修整器(4 〇 0)具有複數個設置於基板(i 0 i)的超級磨粒,其 中中央邛位的超級磨粒(丄2 〇 )成型為稜線部份朝向CMp 拋光墊,外圍部位的超級磨粒(i 3 〇 )成型為平面部分 朝向CMPM塾,f質上所有的超級磨粒成型為尖端形狀 朝向CMP拋光墊、或實質上所有的超級磨粒成型為稜線形 狀朝向CMP拋光墊,多樣化的表面可預期成型,其中實質 上所有的超級磨粒可成型為平面形狀朝向CMP拋光墊(圖 中未示)。 於另一實施例中,本發明揭露了一種方法,其藉由使 用不同品質之磨粒來使CMP修整器的效果理想化,所指之 1306048 品質包含有超級磨粒外在的形狀、及超級磨粒本質上的瑕 ^不規則形狀的磨粒(自然晶形)通常具有尖端部位以造 成具有侵略性的修整,然而,由於不規則的磨粒具有較低 的本質’故其切削時成斜向,而會造成晶圓刮傷,相反的, 為八面形或立方-八面形的磨粒提供較高的形狀品質或較 高的对久品質,該較高品質的磨粒相較於不規則的磨粒而 乏尖端部位’因此切削、破壞時傾斜度較小且較不易 隨之到傷晶圓。 .纟發明另提供-種使用不同品質之超級磨粒的方法, 舉例而言,本發明揭露一 CMP修整器,其具有複數個設於 基板之超級磨粒的,其中中央部位的超級磨粒相較於外圍 部位的超級磨粒而言,具有較低的品質,換言之,外圍部 位的超級磨粒具有較高的品質,低品質可包含有較低的本 質、較低的形狀品質等,較低的本質包含有超級磨粒本身 具有複數個瑕疵或小磨粒,較低的形狀品質包含有超級磨 粒為不規則形狀,其中高形狀品質包含有超級磨粒為八面 形或立方-八面形,本發明將超級磨粒排列設置為高品質 的超級磨粒接近於修整器的外圍’用以形成保言蒦,且避免 中央之較低品質的磨粒受切割及破壞,該設置可控制cMp 修整器的效果,因此使得修整器磨耗及修整速率理想化。 本發明另包含有製造該CMP修整器的方法,該方法可 包含有提供一基板、選擇超級磨粒之設置高度以達成如前 所述之效果、將超級磨粒以所選擇的高度設置於基板上、 且將磨粒以所選擇的高度固定於基板上,本發明之基板可 18 1306048 由^ 重材料所組成,例如為金屬、陶竞、粉末、金屬粉末 或5早性材料,基板另可為不鏽鋼所製。 設置超級磨粒的方法及材料均已揭露於習知技術中, =如格棚狀’可於美國第6,〇39,641號、第6,286,498號、 第^8,⑽號專利案中得知,另可於本發明之中請人於 續年3月27曰提申之美國第勵9,531號申請案得知。 超級磨粒可設置於以金屬粉末製成的基板上,用以成 粉…已知的數種材料所組成,此外該金 程:成型超級磨粒蟬接,先製 了將超級磨粒設於該金屬粉末中以使之 二及固化的過程中’磨粒與基板間形成化學鍵 ,仪耐久但較不耐於磨粒切割及移除的CMP修整 定於1匕1 卜上由於別述的焊接方法,磨粒可藉由電錢方法固The third figure is a third embodiment of the present invention, wherein the CMP conditioner (300) has a plurality of superabrasive grains disposed on the substrate (!0 i), wherein the central super-grain (11 〇) is formed The tip portion is oriented toward the polishing crucible' while the remaining superabrasive particles (12 0) are formed into a ridge portion toward the polishing pad. As shown in the fourth figure, a fourth embodiment of the present invention, the CMP conditioner (4 〇0) has a plurality of superabrasive grains disposed on the substrate (i0i), wherein the centrally-clamped superabrasive grains (丄2) 〇) Formed as a ridge line toward the CMp polishing pad, the superabrasive grains (i 3 〇) at the periphery are formed into a flat portion toward the CMPM塾, and all the superabrasive grains on the f-shape are formed into a tip shape toward the CMP pad, or substantially All of the superabrasive grains are formed into a ridgeline shape toward the CMP pad, and a variety of surfaces are contemplated to be formed, wherein substantially all of the superabrasive particles can be formed into a planar shape toward the CMP pad (not shown). In another embodiment, the present invention discloses a method for idealizing the effect of a CMP conditioner by using abrasive grains of different qualities, the 1306048 quality including the shape of the superabrasive particles, and the super In the nature of abrasive grains, irregularly shaped abrasive grains (natural crystalline forms) usually have a tip portion to cause aggressive dressing, however, because irregular abrasive grains have a lower nature, they are inclined when cut. Will cause scratches on the wafer. Conversely, it provides higher shape quality or higher quality for octagonal or cubic-octagonal abrasive grains. This higher quality abrasive grain is compared to no The regular abrasive grains lack the tip portion. Therefore, the inclination is small when cutting and breaking, and it is difficult to damage the wafer. The invention further provides a method of using super-abrasive grains of different qualities. For example, the present invention discloses a CMP conditioner having a plurality of superabrasive grains disposed on a substrate, wherein a superabrasive phase at a central portion Compared with the superabrasive particles in the peripheral part, it has lower quality, in other words, the superabrasive grains in the peripheral part have higher quality, and the lower quality may include lower essence, lower shape quality, etc., lower The essence consists of superabrasive grains with a plurality of crucibles or small abrasive grains. The lower shape quality contains superabrasive grains with irregular shapes, and the high shape quality contains superabrasive grains for octahedron or cubic-octagonal In the present invention, the super abrasive grain arrangement is arranged such that the high-quality super abrasive grains are close to the periphery of the dresser to form a warning, and the lower-quality abrasive grains in the center are prevented from being cut and destroyed, and the setting can be controlled. The effect of the cMp dresser, thus making the dresser wear and dressing rate ideal. The present invention further includes a method of fabricating the CMP conditioner, the method comprising: providing a substrate, selecting a set height of the superabrasive particles to achieve the effect as described above, and disposing the superabrasive particles on the substrate at the selected height And the abrasive particles are fixed on the substrate at a selected height, and the substrate of the present invention can be composed of 18 1306048, such as metal, ceramics, powder, metal powder or 5 early materials, and the substrate can be further Made of stainless steel. Methods and materials for setting superabrasive grains have been disclosed in the prior art, and are known in the U.S. Patent No. 6, ,39,641, No. 6,286,498, No. 8, (10), and In the present invention, the applicant can be informed of the application of U.S. Patent No. 9,531, which was filed on March 27, 2013. The superabrasive particles may be disposed on a substrate made of metal powder for forming a powder... a plurality of materials known, and further, the gold process: forming a superabrasive splicing, firstly setting a superabrasive grain in the In the metal powder, in the process of making and curing, the chemical bond is formed between the abrasive particles and the substrate, and the CMP dressing which is durable but less resistant to the cutting and removal of the abrasive grains is set at 1匕1. , abrasive grains can be solidified by electricity money method

於·本發明的數你J> Μ I 級磨粒設為—特定古=例中’可精由磁場或真空來將超 阿又,以磁力設置超級磨粒的方式可於 ==,=869號及第5,203,881號專利案中得知,而 知,實;1例子可於美國第4,_,199號專利案中得 設計,該失頭Γ用中Γ菜討到真空中所具有夹頭(chuck)之 設置於基板上:收通過真空裝置的磨粒、並將磨粒 口 ^立於夾頭中的真空炎頭管可成型有開 r級磨粒藉由機械製程設置為所選擇的高度,一 度的條件下,。叹置’真空裝置在不擾亂或改變磨粒高 而將超級磨粒固定於基板上,則形成能達到 19 1306048 理想化修整效果的CMP修整器。 技術領域中人可以多種修正 m , -r ^ 朁代的排列來達成本發 月5玄修正和排列係依據本發明的精隨 人 J两丨思極乾圍,故立供白In the invention, the number of you J> Μ I-class abrasive grain is set to - specific ancient = in the case 'the fine can be refined by magnetic field or vacuum, and the super abrasive grain can be set by magnetic force ==,=869 No. 5,203,881, the patent is known, and the example can be designed in the US Patent No. 4, _, 199, which has a chuck in the vacuum. (chuck) is disposed on the substrate: the vacuum squeezing head tube that passes through the vacuum device and the abrasive granule opening in the collet can be formed with the open r-stage abrasive particles set by the mechanical process to be selected Height, once under conditions. The singer' vacuum device fixes the superabrasive particles on the substrate without disturbing or changing the abrasive grain height, thereby forming a CMP conditioner capable of achieving an idealized trimming effect of 19 1306048. In the technical field, people can modify the arrangement of m, -r ^ 来 to achieve the 5th revision and arrangement according to the present invention.

含於本發明的範圍巾,因此,本發 H 壯能 Μ去土 赞月上逑揭露特定的實施 狀〜、,係為較佳的實施狀態, &收X u 仅術領域中人可能加以略 為正’故本發明包含但 句人ν、+、μ Μ特定的實施狀態, 3上述的尺寸、材料、形 途。 ν戍製私、組合、和用It is included in the scope of the present invention. Therefore, the present invention can be used in the field of the invention, and it is a preferred embodiment. Slightly positive 'The present invention includes the specific implementation state of the sentence ν, +, μ ,, 3 the above dimensions, materials, and shapes.戍戍私私,组合,和用

【圖式簡單說明】 第一圖為本發明之CMp修整器第—實施例的側視圖。 弟二圖為本發明之CMP修整器第二實施例的側視圖。 =二圖為本發明之cMP修整器m例的側視圖。 四圖為本發明之⑽修整器第四實施例的側視圖。 【主要元件符號說明】 (1 〇 〇 ) CMP調節器(1 ο 1 )基板 (1 1 〇 )超級磨粒(1 2 0 )超級磨粒 (1 3 〇 )超級磨粒(2 0 〇 ) cMp修整器 (3 ◦ 〇 ) CMP修整器(4 0 〇 ) CMP修整器 20BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a side view of a first embodiment of a CMp dresser of the present invention. Figure 2 is a side view of a second embodiment of the CMP conditioner of the present invention. = The second figure is a side view of the mMP trimmer m example of the present invention. The four figures are side views of the fourth embodiment of the (10) dresser of the present invention. [Main component symbol description] (1 〇〇) CMP regulator (1 ο 1 ) Substrate (1 1 〇) Super abrasive grain (1 2 0 ) Super abrasive grain (1 3 〇) Super abrasive grain (2 0 〇) cMp Dresser (3 ◦ 〇) CMP Dresser (40 〇) CMP Dresser 20

Claims (1)

1306048 十、申請專利範圍: 1 .於化學機械研磨修整器之製程中用以控制化學機 械研磨修整器之效果的方&,該設有複數個超級磨粒的化 學機械研磨修整器包含有: 以能提供預設效果的高度將超級磨粒設置於其上,其 中位於修整器中央的超級磨粒係成型為具有尖端的高度並 朝向欲修整之拋光墊,其餘超級磨粒係成型為具有平面或 稜線的高度並朝向欲修整之拋光墊。 2如申5月專利範圍第1項所述之方法,其中呈現的 效果為理想的抛光塾修整速率。 3 .如申請專利範圍第1項所述之方法,其中呈現的 效果為理想的修整器磨耗。 4 .如申請專利範圍第丄項所述之方法,其中呈現的 效果維修整速率及修整器磨耗的理想平衡。 5 .如申請專利範圍第1項所述之方法,其中超級磨 粒可由以下所列之材料選擇組成:鑽石、多晶鑽石()、 立方氮化删(cBN)、及多晶立方氮化硼(pCBN )。 6 ·如申請專利範圍第5項所述之方法,其中超級磨 粒包含有鑽石。 7 ·如申請專利範圍第1項所述之方法,其中超级磨 粒排列為一預設圖樣。 8 .如申請專利範圍第7項所述之方法,其中預設的 圖樣為一格柵。 9 .如申請專利範圍第1項所述之方法,其中超级磨 l3〇6〇48 粒具有預設的形狀。 項所述之方法,其中預設 1 0 .如申請專利範圍第 的形狀為自然晶形。 1 .如申請專利範圍第9項所述之方法,豆中預嗖 的圖案為八面體或立方—八面體晶形。 /、 ° 1 2 .如申請專利範圍第1項所述之方法,其中超級 磨:粒固設基板上,該基板可由下列材料所組成:金屬材料、 彈性材料、陶瓷材料、及其混合物。 1 3 ·如申請專利範圍第1 2項所述之方法,其中該 超級磨粒與該基板形成化學鍵結以固定於該基板上。 1 1 2 3 4 .如申請專利範圍第1 2項所述之方法,其中該 超級磨粒電鍍於該基板上。 22 1 5 .如申請專利範圍第1項所述之方法,其中位於 位於修整器外圍的超級磨粒係成型為具有平面的高度並朝 向右人修整之拋光墊,而位於兩者之間的超級磨粒係成型為 具有稜線的高度並朝向欲修整之拋光墊。 2 1 6 .如申請專利範圍第1項所述之方法,其中位於 修整器中央的超級磨粒相較於位於修整器外圍的超級磨粒 下,中央的磨粒具有較低的品質。 3 1 7 .如申請專利範圍第1 6項所述之方法,其中較 低的品質為具有較低的本質。 4 1 8 .如申請專利範圍第丄6項所述之方法,其中較 低的口口負為具有較低的形狀品質。 1 9 .如申請專利範圍第i 8項所述之方法,其中較 ,13060481306048 X. Patent application scope: 1. The method for controlling the effect of the chemical mechanical polishing dresser in the process of the chemical mechanical polishing dresser, the chemical mechanical polishing dresser with a plurality of super abrasive grains comprises: Superabrasives are placed thereon at a height that provides a preset effect, wherein the superabrasives in the center of the dresser are formed to have a pointed height and toward the polishing pad to be trimmed, and the remaining superabrasives are formed to have a flat surface. Or the height of the ridgeline and toward the polishing pad to be trimmed. 2 The method of claim 1, wherein the effect is an ideal polishing rate. 3. The method of claim 1, wherein the effect is an ideal finisher wear. 4. The method of claim 2, wherein the effect is an ideal balance of maintenance rate and dresser wear. 5. The method of claim 1, wherein the superabrasive particles are selected from the following materials: diamond, polycrystalline diamond (), cubic nitride (cBN), and polycrystalline cubic boron nitride. (pCBN). 6. The method of claim 5, wherein the superabrasive grain comprises a diamond. 7. The method of claim 1, wherein the superabrasive grains are arranged in a predetermined pattern. 8. The method of claim 7, wherein the predetermined pattern is a grid. 9. The method of claim 1, wherein the super-milled l3〇6〇48 particles have a predetermined shape. The method of the item, wherein the preset value is 10. The shape of the first application form is a natural crystal form. 1. The method of claim 9, wherein the pattern of the pre-dip in the bean is an octahedron or a cubic-octahedral crystal. The method of claim 1, wherein the superabrasive: granule-stabilized substrate is composed of the following materials: a metallic material, an elastic material, a ceramic material, and a mixture thereof. The method of claim 12, wherein the superabrasive particles form a chemical bond with the substrate to be fixed to the substrate. The method of claim 12, wherein the superabrasive is electroplated on the substrate. The method of claim 1, wherein the superabrasive system located at the periphery of the dresser is formed into a polishing pad having a flat height and trimmed toward the right person, and a super between the two The abrasive grain is formed to have a ridgeline height and toward the polishing pad to be trimmed. The method of claim 1, wherein the superabrasive grains located in the center of the dresser have lower quality than the superabrasive grains located on the periphery of the dresser. 3 1 7. The method of claim 16, wherein the lower quality is of a lower nature. 4 1 8 . The method of claim 6, wherein the lower mouth has a lower shape quality. 1 9 . The method described in claim i of item i, wherein 低的品質兔目+ 、馬/、有不規則的形狀。 2 〇 .如申請專利範圍第i 6項所述之方法,直 圍的超級磨4立么 傷祖為八面體或立方—八面體的形狀。 2 1 .如申請專利範圍第丄9項所述之方法,其中不 規則形狀相較於八面體的形狀下’係提供較具侵略性的修 整。 2 ·如申請專利範圍第1項所述之方法,其中該超 級磨粒的大小約介於1 00-350微米之間。 23 種化學機械研磨修整器,其中包括: 一基板; 複數個超級磨粒,其固設於基板上,該超級磨粒成型 為一高度以控制化學機械研磨修整器的效果,其中位於修 整器中央的超級磨粒係成型為具有尖端的高度並朝向欲修 整之拋光墊,其餘超級磨粒係成型為具有平面或稜線的高 度並朝向欲修整之拋光墊。 2 4 .如申請專利範圍第2 3項所述之化學機械研磨 修整器,其中超級磨粒可由以下所列之材料選擇組成:鑽 石、多晶鑽石(PCD)、立方氮化硼(cBN)、及多晶立方 氮化硼(PCBN)。 2 5 .如申請專利範圍第2 4項所述之化學機械研磨 修整器,其中超級磨粒包含有鑽石。 2 6 .如申請專利範圍第2 5項所述之化學機械研磨 修整器,其中超級磨粒具有預設的形狀。 2 7 .如申請專利範圍第2 6項所述之化學機械研磨 23 1306048 ·Low quality rabbit head +, horse /, has an irregular shape. 2 〇 If the method described in the scope of patent application is given in item i6, the surrounding super-grinding is in the shape of an octahedron or a cubic-octahedron. 2 1. The method of claim 9, wherein the irregular shape provides a more aggressive modification than the shape of the octahedron. 2. The method of claim 1, wherein the superabrasive grain has a size between about 100 and 350 microns. 23 kinds of chemical mechanical polishing dressers, comprising: a substrate; a plurality of super abrasive grains fixed on the substrate, the super abrasive grains being formed into a height to control the effect of the chemical mechanical polishing dresser, wherein the center of the dresser is located The superabrasive system is formed to have a pointed height and toward the polishing pad to be trimmed, and the remaining superabrasives are formed to have a flat or ridged height and toward the polishing pad to be trimmed. 2 4. The chemical mechanical polishing dresser of claim 2, wherein the superabrasive particles are selected from the following materials: diamond, polycrystalline diamond (PCD), cubic boron nitride (cBN), And polycrystalline cubic boron nitride (PCBN). 2 5. The chemical mechanical polishing dresser of claim 24, wherein the superabrasive grains comprise diamonds. The chemical mechanical polishing dresser of claim 25, wherein the superabrasive particles have a predetermined shape. 2 7. Chemical mechanical grinding as described in Clause 2 of the patent application 23 1306048 · 修整器,其中預設的形狀為自然晶形。 2 8 .如申請專利範圍第2 6項所述之化學機械研磨 修整器,其中預設的形狀為八面體或立方—八面體晶形。 2 9 .如申請專利範圍第2 3項所述之化學機械研磨 修整益,其中該超級磨粒排列為一預設圖樣。 3 0 .如申請專利範圍第2 9項所述之化學機械研磨 修整器,其中預設的圖樣為一格栅。 3 1 .如申請專利範圍第2 3項所述之化學機械研磨 修整器,其中該超級磨粒與該基板形成化學鍵結以固定於 这基板上。 2 ·如申請專利範圍第2 3項所述之化學機械研磨 修整益,其中該超級磨粒電鍍於該基板上。 2 3 ·如申請專利範圍第2 3項所述之化學機械研磨 4正器,其中位於修整器外圍的超級磨粒係成型為具有平 面的阿度並朝向欲修整之拋光墊,而位於兩者之間的超級 φ 磨粒係成型為具有稜線的高度並朝向欲修整之拋光墊。 4 .如申請專利範圍第2 3項所述之化學機械研磨 修整态’其中位於修整器中央的超級磨粒相較於位於修整 器外圍的超級磨粒下,中央的磨粒具有較低的品質。/正 2 5 .如中請專利範圍第3 4項所述之化學機械研磨 修整器,其中較低的品質為具有較低的本質。 表2 6 .如申請專利範圍第3 4項所述之化學機械研磨 0整„其中較低的品質為具有較低的形狀品質。 3 7 .如申請專利範圍第3 6項所述之化學機械研磨 24 1306048 . 修整器, 3 8 修整器, 形狀。A trimmer in which the preset shape is a natural crystal form. 2 8. The chemical mechanical polishing dresser of claim 26, wherein the predetermined shape is an octahedron or a cubic-octahedral crystal. 2 9. The chemical mechanical polishing modification described in claim 23, wherein the super abrasive grains are arranged in a predetermined pattern. The chemical mechanical polishing dresser of claim 29, wherein the preset pattern is a grid. The chemical mechanical polishing dresser of claim 2, wherein the superabrasive particles form a chemical bond with the substrate to be fixed to the substrate. 2. The CMP polishing process as described in claim 2, wherein the superabrasive is electroplated on the substrate. 2 3 · The CMP apparatus as described in claim 2, wherein the superabrasive system located on the periphery of the dresser is formed to have a flat Adu and is oriented toward the polishing pad to be trimmed, and located in both The super φ abrasive grain between is formed to have a ridgeline height and toward the polishing pad to be trimmed. 4. The chemical mechanical polishing trimming state as described in claim 2, wherein the superabrasive grains in the center of the dresser have lower quality than the superabrasive grains located on the periphery of the dresser. . / 正 2 5 . The chemical mechanical polishing dresser described in claim 4, wherein the lower quality is of a lower nature. Table 2 6. Chemical mechanical polishing as described in item 34 of the patent application, wherein the lower quality is lower in shape quality. 3 7. Chemical machinery as described in claim 36. Grinding 24 1306048 . Dresser, 3 8 dresser, shape. 其中較低的品質為具有不規則的形狀 .如申請專利範圍第3 4項所述之化學機械研磨 其中較高的形狀品質為八面體或立方—八面體的 敕=3 .如申請專利範圍第3 7項所述之化學機械研磨 G正器’其中不規則形狀相較於八面體的形狀下,係提供 較具侵略性的修整。 4 〇 ·如申請專利範圍第2 3項所述之化學機械研磨 修整器’其中該超級磨粒的大小約介於1 00-350微米之間。 4 1 . 一種用於製造如申請專利範圍第2 3項所述之 化學機械研磨修整器的方法,其中包括: 提供一基板; 選擇超級磨粒之設置高度以達成預設之效果; 將超級磨粒以所選擇的高度設置於基板上; 將磨粒以所選擇的高度固定於基板上。 十一、圖式: 如次頁 25Among them, the lower quality has an irregular shape. For example, the chemical mechanical grinding described in the patent application No. 34, wherein the higher shape quality is octahedron or cubic-octahedron 敕=3. The chemical mechanical grinding G-positor described in the scope of item 37, wherein the irregular shape provides a more aggressive dressing than the shape of the octahedron. 4 〇 The chemical mechanical polishing conditioner as described in claim 2, wherein the size of the superabrasive particles is between about 100 and 350 microns. 4 1. A method for manufacturing a chemical mechanical polishing conditioner as described in claim 2, which comprises: providing a substrate; selecting a set height of the superabrasive particles to achieve a preset effect; The pellets are disposed on the substrate at a selected height; the abrasive particles are fixed to the substrate at a selected height. XI. Schema: as the next page 25
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