JP7402538B2 - 窒化アルミニウムウェハの製造方法およびその窒化アルミニウムウェハ - Google Patents
窒化アルミニウムウェハの製造方法およびその窒化アルミニウムウェハ Download PDFInfo
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- JP7402538B2 JP7402538B2 JP2021186786A JP2021186786A JP7402538B2 JP 7402538 B2 JP7402538 B2 JP 7402538B2 JP 2021186786 A JP2021186786 A JP 2021186786A JP 2021186786 A JP2021186786 A JP 2021186786A JP 7402538 B2 JP7402538 B2 JP 7402538B2
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- aluminum nitride
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- nitride wafer
- aluminum
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
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Description
2 ノッチ
3 エッジ
4 オリエンテーションフラット
6 エッジ研削用のグラインダー砥石
7 ノッチ研削用のグラインダー砥石
Claims (3)
- 窒化アルミニウムウェハの製造方法であって、
ステップ(a):窒化アルミニウムグリーン体をドクターブレードでシート化するか、前記窒化アルミニウムグリーン体をドクターブレードで窒化アルミニウムグリーンロールを形成し裁断することで得られる窒化アルミニウムグリーンシートを用意するステップと、
ステップ(b):前記窒化アルミニウムグリーンシートを脱脂工程及び焼結工程により窒化アルミニウムウェハ材にするステップと、
ステップ(c):前記窒化アルミニウムウェハ材の外縁上に少なくとも1以上のノッチを形成し、前記窒化アルミニウムウェハ材に対し、その外縁にエッジを形成し、研磨を行うステップと、
を含み、
前記ノッチの形状は、V形状であり、前記V形状の底、左右及び上部はR面取りされており、
前記エッジの形状は、直角型、半円形、非対称半円形、半楕円形、非対称半楕円形、対称な台形、非対称な台形、対称な半円形と台形の組み合わせまたは非対称な半円形と台形の組み合わせであることを特徴とする窒化アルミニウムウェハの製造方法。 - 前記脱脂工程は、200℃~900℃で行い、
前記焼結工程は、1000℃~3000℃かつ真空、常圧または100~6000気圧の高圧で行うことを特徴とする請求項1に記載の窒化アルミニウムウェハの製造方法。 - 前記窒化アルミニウムグリーン体は、窒化アルミニウム顆粒を含み、
このうち、前記窒化アルミニウム顆粒は、酸化アルミニウムまたは純アルミニウムの少なくとも一方の粉末と、窒素、炭素、水素原子を含む有機接着剤と混合した後、600℃~3000℃の温度で高温炭素熱還元反応を行って窒化アルミニウムを形成し、200℃~900℃の温度で高温脱炭後に造粒することで得られることを特徴とする請求項1に記載の窒化アルミニウムウェハの製造方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005007518A (ja) | 2003-06-19 | 2005-01-13 | Nihon Micro Coating Co Ltd | ウエハエッジ研磨装置 |
WO2015029951A1 (ja) | 2013-08-26 | 2015-03-05 | 日立金属株式会社 | 実装基板用ウエハ、多層セラミックス基板、実装基板、チップモジュール、及び実装基板用ウエハの製造方法 |
JP5755390B1 (ja) | 2014-01-06 | 2015-07-29 | 日本碍子株式会社 | ハンドル基板および半導体用複合ウエハー |
JP2016215339A (ja) | 2015-05-22 | 2016-12-22 | 日本電気硝子株式会社 | ガラス基板の研削方法 |
WO2019189377A1 (ja) | 2018-03-27 | 2019-10-03 | 日本碍子株式会社 | 窒化アルミニウム板 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3483012B2 (ja) * | 1994-07-01 | 2004-01-06 | 新光電気工業株式会社 | セラミック基板製造用焼結体、セラミック基板およびその製造方法 |
JP3580600B2 (ja) * | 1995-06-09 | 2004-10-27 | 株式会社ルネサステクノロジ | 半導体装置の製造方法およびそれに使用される半導体ウエハ並びにその製造方法 |
JPH1129880A (ja) * | 1997-07-09 | 1999-02-02 | Yoshiaki Tatsumi | ダミーウェハー |
JPH11154655A (ja) * | 1997-11-21 | 1999-06-08 | Komatsu Electron Metals Co Ltd | 半導体ウェハの製造方法 |
JP5060439B2 (ja) | 2000-12-04 | 2012-10-31 | 株式会社東芝 | 薄膜基板の製造方法 |
JP4280009B2 (ja) | 2001-12-14 | 2009-06-17 | 株式会社東芝 | 窒化アルミニウム基板およびそれを用いた薄膜基板 |
US7258931B2 (en) * | 2002-08-29 | 2007-08-21 | Samsung Electronics Co., Ltd. | Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination |
JP2007031229A (ja) | 2005-07-28 | 2007-02-08 | Tdk Corp | 窒化アルミニウム基板の製造方法及び窒化アルミニウム基板 |
DE102006022089A1 (de) * | 2006-05-11 | 2007-11-15 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe mit einr profilierten Kante |
US8389099B1 (en) * | 2007-06-01 | 2013-03-05 | Rubicon Technology, Inc. | Asymmetrical wafer configurations and method for creating the same |
JP5931862B2 (ja) | 2010-07-20 | 2016-06-08 | ヘクサテック,インコーポレイテッド | 多結晶窒化アルミニウム材料およびその製造方法 |
JP6099960B2 (ja) | 2012-12-18 | 2017-03-22 | ダイトエレクトロン株式会社 | ウェーハの面取り加工方法およびウェーハの面取り装置 |
TWI594291B (zh) * | 2016-08-17 | 2017-08-01 | 鴻創應用科技有限公司 | 陶瓷晶圓片及其製造方法 |
JP6271665B1 (ja) | 2016-09-20 | 2018-01-31 | 國家中山科學研究院 | 球状窒化アルミニウム粉末の製造方法 |
JP2019001684A (ja) * | 2017-06-15 | 2019-01-10 | Agc株式会社 | ガラス基板及びガラス基板梱包体 |
JP7258494B2 (ja) | 2018-04-26 | 2023-04-17 | 株式会社Maruwa | 複合基板、及び、複合基板の製造方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005007518A (ja) | 2003-06-19 | 2005-01-13 | Nihon Micro Coating Co Ltd | ウエハエッジ研磨装置 |
WO2015029951A1 (ja) | 2013-08-26 | 2015-03-05 | 日立金属株式会社 | 実装基板用ウエハ、多層セラミックス基板、実装基板、チップモジュール、及び実装基板用ウエハの製造方法 |
JP5755390B1 (ja) | 2014-01-06 | 2015-07-29 | 日本碍子株式会社 | ハンドル基板および半導体用複合ウエハー |
JP2016215339A (ja) | 2015-05-22 | 2016-12-22 | 日本電気硝子株式会社 | ガラス基板の研削方法 |
WO2019189377A1 (ja) | 2018-03-27 | 2019-10-03 | 日本碍子株式会社 | 窒化アルミニウム板 |
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