TW202125093A - 遮罩基底、相移遮罩及半導體元件之製造方法 - Google Patents
遮罩基底、相移遮罩及半導體元件之製造方法 Download PDFInfo
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- TW202125093A TW202125093A TW109131468A TW109131468A TW202125093A TW 202125093 A TW202125093 A TW 202125093A TW 109131468 A TW109131468 A TW 109131468A TW 109131468 A TW109131468 A TW 109131468A TW 202125093 A TW202125093 A TW 202125093A
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- Prior art keywords
- phase shift
- film
- mask
- shift film
- light
- Prior art date
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- 230000010363 phase shift Effects 0.000 title claims abstract description 384
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 125
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 117
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 91
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 90
- 239000001301 oxygen Substances 0.000 claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 64
- 239000010703 silicon Substances 0.000 claims abstract description 64
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- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 58
- 230000008033 biological extinction Effects 0.000 claims abstract description 34
- 238000012546 transfer Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 abstract description 61
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 229910052752 metalloid Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 531
- 238000005530 etching Methods 0.000 description 72
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- 239000000203 mixture Substances 0.000 description 37
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- 229910052782 aluminium Inorganic materials 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 22
- 239000011651 chromium Substances 0.000 description 21
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 19
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- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 17
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 12
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- 238000004458 analytical method Methods 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 8
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- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 238000011161 development Methods 0.000 description 6
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- 239000010409 thin film Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
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- 229910016006 MoSi Inorganic materials 0.000 description 4
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- 239000000470 constituent Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
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- 239000011261 inert gas Substances 0.000 description 3
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
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- 229910021641 deionized water Inorganic materials 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
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- 229910052754 neon Inorganic materials 0.000 description 2
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- 239000010955 niobium Substances 0.000 description 2
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- 239000010948 rhodium Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
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- 229910052724 xenon Inorganic materials 0.000 description 2
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019173996 | 2019-09-25 | ||
| JP2019-173996 | 2019-09-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202125093A true TW202125093A (zh) | 2021-07-01 |
Family
ID=75166612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109131468A TW202125093A (zh) | 2019-09-25 | 2020-09-14 | 遮罩基底、相移遮罩及半導體元件之製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20220342294A1 (https=) |
| JP (1) | JPWO2021059890A1 (https=) |
| KR (1) | KR20220066884A (https=) |
| CN (1) | CN114521245A (https=) |
| TW (1) | TW202125093A (https=) |
| WO (1) | WO2021059890A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7793450B2 (ja) * | 2022-03-31 | 2026-01-05 | Hoya株式会社 | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5134386A (https=) * | 1974-09-18 | 1976-03-24 | Nippon Denki Sylvania Kk | |
| JP3422054B2 (ja) | 1993-11-01 | 2003-06-30 | 凸版印刷株式会社 | 光学マスクおよびその製造方法 |
| JP3736132B2 (ja) * | 1998-08-25 | 2006-01-18 | 株式会社村田製作所 | 位相シフトマスクの作製方法 |
| JP2000162757A (ja) * | 1998-11-27 | 2000-06-16 | Nec Corp | 位相シフトマスクの製造方法 |
| JP3065063B1 (ja) * | 1999-02-10 | 2000-07-12 | 株式会社半導体先端テクノロジーズ | パタ―ン形成方法及び位相シフトマスク |
| JP2002156739A (ja) * | 2000-11-21 | 2002-05-31 | Toppan Printing Co Ltd | 位相シフトマスクブランク及び位相シフトマスク |
| JP2002258458A (ja) * | 2000-12-26 | 2002-09-11 | Hoya Corp | ハーフトーン型位相シフトマスク及びマスクブランク |
| US6569581B2 (en) * | 2001-03-21 | 2003-05-27 | International Business Machines Corporation | Alternating phase shifting masks |
| DE10307518B4 (de) * | 2002-02-22 | 2011-04-14 | Hoya Corp. | Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung |
| JP4419464B2 (ja) * | 2003-07-22 | 2010-02-24 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスクの製造方法 |
| US20070121090A1 (en) * | 2005-11-30 | 2007-05-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4881633B2 (ja) | 2006-03-10 | 2012-02-22 | 凸版印刷株式会社 | クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法 |
| JP2012073326A (ja) * | 2010-09-28 | 2012-04-12 | Toppan Printing Co Ltd | フォトマスク、フォトマスクブランク及びフォトマスクの製造方法 |
| JP2012203317A (ja) * | 2011-03-28 | 2012-10-22 | Toppan Printing Co Ltd | 位相シフトマスクブランク及び位相シフトマスク及び位相シフトマスクの製造方法 |
| TWI541590B (zh) * | 2013-12-26 | 2016-07-11 | Ｈｏｙａ股份有限公司 | 光罩之製造方法、光罩及圖案轉印方法 |
| JP2016009055A (ja) * | 2014-06-24 | 2016-01-18 | 凸版印刷株式会社 | 表示装置基板作製用フォトマスク及びその製造方法、及び表示装置基板の製造方法 |
| JP6612326B2 (ja) * | 2015-03-19 | 2019-11-27 | Ｈｏｙａ株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| KR102625449B1 (ko) * | 2015-05-15 | 2024-01-16 | 호야 가부시키가이샤 | 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| WO2017038213A1 (ja) * | 2015-08-31 | 2017-03-09 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法 |
| JP2017227824A (ja) * | 2016-06-24 | 2017-12-28 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| KR20180041042A (ko) * | 2016-10-13 | 2018-04-23 | 주식회사 에스앤에스텍 | 위상반전 블랭크 마스크 및 포토마스크 |
| JP2018072543A (ja) * | 2016-10-28 | 2018-05-10 | 凸版印刷株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
| US20180335692A1 (en) * | 2017-05-18 | 2018-11-22 | S&S Tech Co., Ltd. | Phase-shift blankmask and phase-shift photomask |
| JP6547019B1 (ja) * | 2018-02-22 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 |
| CN111742259B (zh) * | 2018-02-27 | 2023-05-02 | Hoya株式会社 | 掩模坯料、相移掩模及半导体器件的制造方法 |
| US11314161B2 (en) * | 2018-03-14 | 2022-04-26 | Hoya Corporation | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
| WO2020066590A1 (ja) * | 2018-09-25 | 2020-04-02 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
| JP6927177B2 (ja) * | 2018-09-26 | 2021-08-25 | 信越化学工業株式会社 | 位相シフト型フォトマスクブランク及び位相シフト型フォトマスク |
| CN112740106A (zh) * | 2018-09-27 | 2021-04-30 | Hoya株式会社 | 掩模坯料、转印用掩模及半导体器件的制造方法 |
-
2020
- 2020-09-01 KR KR1020227007112A patent/KR20220066884A/ko not_active Ceased
- 2020-09-01 WO PCT/JP2020/033040 patent/WO2021059890A1/ja not_active Ceased
- 2020-09-01 JP JP2021548729A patent/JPWO2021059890A1/ja active Pending
- 2020-09-01 CN CN202080066119.2A patent/CN114521245A/zh active Pending
- 2020-09-01 US US17/634,481 patent/US20220342294A1/en not_active Abandoned
- 2020-09-14 TW TW109131468A patent/TW202125093A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2021059890A1 (https=) | 2021-04-01 |
| WO2021059890A1 (ja) | 2021-04-01 |
| US20220342294A1 (en) | 2022-10-27 |
| CN114521245A (zh) | 2022-05-20 |
| KR20220066884A (ko) | 2022-05-24 |
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