KR20220066884A - 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR20220066884A
KR20220066884A KR1020227007112A KR20227007112A KR20220066884A KR 20220066884 A KR20220066884 A KR 20220066884A KR 1020227007112 A KR1020227007112 A KR 1020227007112A KR 20227007112 A KR20227007112 A KR 20227007112A KR 20220066884 A KR20220066884 A KR 20220066884A
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KR
South Korea
Prior art keywords
phase shift
film
shift film
mask
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020227007112A
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English (en)
Korean (ko)
Inventor
히로아키 시시도
히토시 마에다
Original Assignee
호야 가부시키가이샤
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Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20220066884A publication Critical patent/KR20220066884A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020227007112A 2019-09-25 2020-09-01 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Ceased KR20220066884A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-173996 2019-09-25
JP2019173996 2019-09-25
PCT/JP2020/033040 WO2021059890A1 (ja) 2019-09-25 2020-09-01 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20220066884A true KR20220066884A (ko) 2022-05-24

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ID=75166612

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227007112A Ceased KR20220066884A (ko) 2019-09-25 2020-09-01 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법

Country Status (6)

Country Link
US (1) US20220342294A1 (https=)
JP (1) JPWO2021059890A1 (https=)
KR (1) KR20220066884A (https=)
CN (1) CN114521245A (https=)
TW (1) TW202125093A (https=)
WO (1) WO2021059890A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7793450B2 (ja) * 2022-03-31 2026-01-05 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07128839A (ja) 1993-11-01 1995-05-19 Toppan Printing Co Ltd 光学マスクおよびその製造方法
JP2007241136A (ja) 2006-03-10 2007-09-20 Toppan Printing Co Ltd クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法

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JP3736132B2 (ja) * 1998-08-25 2006-01-18 株式会社村田製作所 位相シフトマスクの作製方法
JP2000162757A (ja) * 1998-11-27 2000-06-16 Nec Corp 位相シフトマスクの製造方法
JP3065063B1 (ja) * 1999-02-10 2000-07-12 株式会社半導体先端テクノロジーズ パタ―ン形成方法及び位相シフトマスク
JP2002156739A (ja) * 2000-11-21 2002-05-31 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスク
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
DE10307518B4 (de) * 2002-02-22 2011-04-14 Hoya Corp. Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
JP4419464B2 (ja) * 2003-07-22 2010-02-24 凸版印刷株式会社 ハーフトーン型位相シフトマスクの製造方法
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2012073326A (ja) * 2010-09-28 2012-04-12 Toppan Printing Co Ltd フォトマスク、フォトマスクブランク及びフォトマスクの製造方法
JP2012203317A (ja) * 2011-03-28 2012-10-22 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスク及び位相シフトマスクの製造方法
TWI541590B (zh) * 2013-12-26 2016-07-11 Ｈｏｙａ股份有限公司 光罩之製造方法、光罩及圖案轉印方法
JP2016009055A (ja) * 2014-06-24 2016-01-18 凸版印刷株式会社 表示装置基板作製用フォトマスク及びその製造方法、及び表示装置基板の製造方法
JP6612326B2 (ja) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
KR102625449B1 (ko) * 2015-05-15 2024-01-16 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法
JP2017227824A (ja) * 2016-06-24 2017-12-28 Hoya株式会社 マスクブランク、転写用マスクの製造方法および半導体デバイスの製造方法
KR20180041042A (ko) * 2016-10-13 2018-04-23 주식회사 에스앤에스텍 위상반전 블랭크 마스크 및 포토마스크
JP2018072543A (ja) * 2016-10-28 2018-05-10 凸版印刷株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
US20180335692A1 (en) * 2017-05-18 2018-11-22 S&S Tech Co., Ltd. Phase-shift blankmask and phase-shift photomask
JP6547019B1 (ja) * 2018-02-22 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
CN111742259B (zh) * 2018-02-27 2023-05-02 Hoya株式会社 掩模坯料、相移掩模及半导体器件的制造方法
US11314161B2 (en) * 2018-03-14 2022-04-26 Hoya Corporation Mask blank, phase shift mask, and method of manufacturing semiconductor device
WO2020066590A1 (ja) * 2018-09-25 2020-04-02 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP6927177B2 (ja) * 2018-09-26 2021-08-25 信越化学工業株式会社 位相シフト型フォトマスクブランク及び位相シフト型フォトマスク
CN112740106A (zh) * 2018-09-27 2021-04-30 Hoya株式会社 掩模坯料、转印用掩模及半导体器件的制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07128839A (ja) 1993-11-01 1995-05-19 Toppan Printing Co Ltd 光学マスクおよびその製造方法
JP2007241136A (ja) 2006-03-10 2007-09-20 Toppan Printing Co Ltd クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法

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JPWO2021059890A1 (https=) 2021-04-01
WO2021059890A1 (ja) 2021-04-01
US20220342294A1 (en) 2022-10-27
TW202125093A (zh) 2021-07-01
CN114521245A (zh) 2022-05-20

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