CN114521245A - 掩模坯料、相移掩模及半导体器件的制造方法 - Google Patents

掩模坯料、相移掩模及半导体器件的制造方法 Download PDF

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Publication number
CN114521245A
CN114521245A CN202080066119.2A CN202080066119A CN114521245A CN 114521245 A CN114521245 A CN 114521245A CN 202080066119 A CN202080066119 A CN 202080066119A CN 114521245 A CN114521245 A CN 114521245A
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CN
China
Prior art keywords
phase shift
film
shift film
mask
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080066119.2A
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English (en)
Chinese (zh)
Inventor
宍戸博明
前田仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN114521245A publication Critical patent/CN114521245A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN202080066119.2A 2019-09-25 2020-09-01 掩模坯料、相移掩模及半导体器件的制造方法 Pending CN114521245A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019173996 2019-09-25
JP2019-173996 2019-09-25
PCT/JP2020/033040 WO2021059890A1 (ja) 2019-09-25 2020-09-01 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
CN114521245A true CN114521245A (zh) 2022-05-20

Family

ID=75166612

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080066119.2A Pending CN114521245A (zh) 2019-09-25 2020-09-01 掩模坯料、相移掩模及半导体器件的制造方法

Country Status (6)

Country Link
US (1) US20220342294A1 (https=)
JP (1) JPWO2021059890A1 (https=)
KR (1) KR20220066884A (https=)
CN (1) CN114521245A (https=)
TW (1) TW202125093A (https=)
WO (1) WO2021059890A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7793450B2 (ja) * 2022-03-31 2026-01-05 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

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JP2012203317A (ja) * 2011-03-28 2012-10-22 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスク及び位相シフトマスクの製造方法
KR20180041042A (ko) * 2016-10-13 2018-04-23 주식회사 에스앤에스텍 위상반전 블랭크 마스크 및 포토마스크
CN110955109A (zh) * 2018-09-26 2020-04-03 信越化学工业株式会社 相移型光掩模坯料和相移型光掩模

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JP3736132B2 (ja) * 1998-08-25 2006-01-18 株式会社村田製作所 位相シフトマスクの作製方法
JP2000162757A (ja) * 1998-11-27 2000-06-16 Nec Corp 位相シフトマスクの製造方法
JP3065063B1 (ja) * 1999-02-10 2000-07-12 株式会社半導体先端テクノロジーズ パタ―ン形成方法及び位相シフトマスク
JP2002156739A (ja) * 2000-11-21 2002-05-31 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスク
JP2002258458A (ja) * 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
DE10307518B4 (de) * 2002-02-22 2011-04-14 Hoya Corp. Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
JP4419464B2 (ja) * 2003-07-22 2010-02-24 凸版印刷株式会社 ハーフトーン型位相シフトマスクの製造方法
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4881633B2 (ja) 2006-03-10 2012-02-22 凸版印刷株式会社 クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法
JP2012073326A (ja) * 2010-09-28 2012-04-12 Toppan Printing Co Ltd フォトマスク、フォトマスクブランク及びフォトマスクの製造方法
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WO2017038213A1 (ja) * 2015-08-31 2017-03-09 Hoya株式会社 マスクブランク、位相シフトマスクおよびその製造方法、並びに半導体デバイスの製造方法
JP2017227824A (ja) * 2016-06-24 2017-12-28 Hoya株式会社 マスクブランク、転写用マスクの製造方法および半導体デバイスの製造方法
JP2018072543A (ja) * 2016-10-28 2018-05-10 凸版印刷株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
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Patent Citations (3)

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JP2012203317A (ja) * 2011-03-28 2012-10-22 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスク及び位相シフトマスクの製造方法
KR20180041042A (ko) * 2016-10-13 2018-04-23 주식회사 에스앤에스텍 위상반전 블랭크 마스크 및 포토마스크
CN110955109A (zh) * 2018-09-26 2020-04-03 信越化学工业株式会社 相移型光掩模坯料和相移型光掩模

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JPWO2021059890A1 (https=) 2021-04-01
WO2021059890A1 (ja) 2021-04-01
US20220342294A1 (en) 2022-10-27
TW202125093A (zh) 2021-07-01
KR20220066884A (ko) 2022-05-24

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Application publication date: 20220520