TW202123350A - 半導體晶圓及其製造方法 - Google Patents
半導體晶圓及其製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 129
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 121
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 121
- 239000010703 silicon Substances 0.000 claims abstract description 121
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 77
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 77
- 238000005530 etching Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Abstract
關於本發明的半導體晶圓的製造方法,具備:第1步驟,在矽基板的上表面形成分割為複數個小區塊的氮化鎵成長層;和第2步驟,以絕緣膜掩埋複數個小區塊的間隔。其中絕緣膜將與氮化鎵成長層施加至矽基板的應力為相反方向的應力施加至矽基板。
Description
本發明是有關於半導體晶圓及其製造方法。
在專利文獻1中,揭示了在藍寶石或碳化矽之基板上,使具有與基板相異的晶格常數的半導體層成長的方法。在這個方法中,形成具有開口部的膜層,上述開口部用於使半導體層選擇性成長於基板上的指定部位,藉由開口部使基板的指定部位露出。接著,在藉由開口部露出之基板的表面上選擇性地異質磊晶成長半導體層。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開平10-135140號公報
[發明所欲解決的問題]
如果在矽基板成長氮化鎵,基板可能會因為兩者的晶格常數的差而翹曲。在專利文獻1的方法中,可以藉由分割半導體層來減低基板翹曲。但是,在專利文獻1的方法中,有無法充分地抑制翹曲的可能性。因此,曝光步驟等的之後的步驟有變困難之虞。
本發明是用於解決上述的問題而做出,其目的為:得到能夠抑制基板的翹曲之半導體晶圓及其製造方法。
[用以解決問題的手段]
關於本發明的半導體晶圓的製造方法,具備:第1步驟,在矽基板的上表面形成分割為複數個小區塊的氮化鎵成長層;和第2步驟,以絕緣膜掩埋前述複數個小區塊的間隔。其中前述絕緣膜將與前述氮化鎵成長層施加至前述矽基板的應力為相反方向的應力施加至前述矽基板。
關於本發明的半導體晶圓,具備:矽基板;氮化鎵成長層,設置於前述矽基板的上表面,且被分割為複數個小區塊;和絕緣層,設置於前述矽基板的上表面,掩埋前述複數個小區塊的間隔。其中前述絕緣層將與前述氮化鎵成長層施加至前述矽基板的應力為相反方向的應力施加至前述矽基板。
[發明的效果]
在關於本發明的半導體晶圓的製造方法中,可以藉由絕緣膜來抑制矽基板的翹曲。
在關於本發明的半導體晶圓中,可以藉由絕緣層來抑制矽基板的翹曲。
關於本發明的實施形態的半導體晶圓及其製造方法,參照圖式以進行說明。相同或對應的元件標記相同的符號,且有時省略重複的說明。
實施形態1
第1圖為關於實施形態1的半導體晶圓100的剖面圖,半導體晶圓100具備矽基板10。在矽基板10的上表面設有氮化鎵成長層12。氮化鎵成長層12被分割為複數個小區塊13。複數個小區塊13彼此分開。氮化鎵成長層是包含例如In1−x−y
Gax
Aly
N層的多層膜。在此,0≦x≦1且0≦y≦1。
在矽基板10的上表面設有絕緣膜14。絕緣膜14掩埋複數個小區塊13的間隔。絕緣膜14的厚度為例如1μm以上、氮化鎵成長層12的厚度以下。絕緣膜14為例如氮化矽膜。絕緣膜14從矽基板10的一端排列至另一端。
接著,說明半導體晶圓100的製造方法。首先,在矽基板10的上表面形成熱氧化膜16。第2圖所示為在矽基板10形成了熱氧化膜16的狀態的平面圖。熱氧化膜16是藉由光微影形成為格子狀的圖案。因此,形成格子狀的氧化膜。矽基板10的上表面是以熱氧化膜16分隔為複數個區域11。
接著,在矽基板10形成氮化鎵成長層12。氮化鎵成長層12是藉由例如有機金屬氣相成長法或分子束磊晶法來形成。藉此,在矽基板10內並未被熱氧化膜16被覆的部分,形成氮化鎵成長層12。也就是說,在複數個區域11分別成長複數個小區塊13。另外,氮化鎵成長層12包含用於使氮化鎵磊晶成長的緩衝層。
之後,除去熱氧化膜16。使用例如氫氟酸來除去。第3圖所示為除去了熱氧化膜16的狀態的平面圖。第4圖所示為除去了熱氧化膜16的狀態的剖面圖。以上為形成在矽基板10的上表面分割為複數個小區塊13的氮化鎵成長層12的第1步驟。
接著,實施以絕緣膜14掩埋複數個小區塊13的間隔的第2步驟。第5圖所示為形成了絕緣膜14的狀態的剖面圖。絕緣膜14是藉由例如CVD(Chemical Vapor Deposition)法來沉積於矽基板10上。絕緣膜14是形成為黏著於矽基板10。
絕緣膜14將與氮化鎵成長層12施加至矽基板10的應力為相反方向的應力施加至矽基板10。絕緣膜14是由對矽基板10施加與氮化鎵成長層12相反的應力的材料所形成。絕緣膜14為例如氮化矽膜或氧化矽膜。絕緣膜14優選為由施加較大應力於矽基板10的材料所形成。
一般而言,氮化矽膜可以藉由成膜條件來產生數GPa左右的抗拉應力或壓縮應力。儘管取決於製造裝置,在以電漿CVD形成的氮化矽膜中可以得到300MPa左右的膜應力,在以熱CVD形成的氮化矽膜中可以得到1GPa左右的膜應力。此外,絕緣膜14也可以ECR(Electron Cyclotron Resonance)濺鍍來形成。在以ECR濺鍍形成的氮化矽膜中能夠得到3GPa左右的膜應力。
例如也可以使用SiH4
和NH3
作為處理氣體,藉由電漿CVD來形成絕緣膜14。在此情況下,藉由使SiH4
相對於NH3
的比率在0.5~2變化,能夠使膜應力從100MPa左右的抗拉應力到~300MPa左右的壓縮應力變化。因此,例如藉由將SiH4
相對於NH3
的比率設定為0.5以下,可以將抗拉應力從絕緣膜14施加至矽基板10。此外,藉由將SiH4
相對於NH3
的比率設定為2以上,可以將抗拉應力從絕緣膜14施加至矽基板10。
接著,如第1圖所示,移除絕緣膜14直到氮化鎵成長層12露出。絕緣膜14的除去是藉由乾蝕刻等的蝕刻來進行。此時,藉由調整蝕刻時間,調整絕緣膜14的厚度。一般而言,絕緣膜14越厚,施加至矽基板10的應力就越大。因此,藉由調整蝕刻時間,可以調整絕緣膜14施加至矽基板10的應力的大小。
此外,能夠矯正的翹曲與絕緣膜14的厚度成比例地變大。絕緣膜14的厚度也可以由矽基板10在形成氮化鎵成長層12、形成絕緣膜14之前的狀態下的翹曲量來決定。絕緣膜14的厚度也可以設定為使矽基板10在形成了絕緣膜14的狀態下變得平坦。
一般而言,緩和基板的翹曲所需的絕緣膜的膜厚取決於氮化鎵成長層間的區域的大小或絕緣膜的膜應力的大小。例如,如果以1μm的厚度沉積膜應力為1GPa的絕緣膜14,與並未設置絕緣膜14的情況相比較,可以矯正數μm~10μm左右的矽基板10的翹曲。在此,將相對於小區塊13的寬度之被相鄰的小區塊13夾住之絕緣膜14的寬度設定為1/10。此外,矽基板10的厚度是設定為625μm。如上所述,例如藉由將絕緣膜14的厚度設為1μm以上,可以充分抑制矽基板10的翹曲。
如上所述,形成絕緣膜14。絕緣膜14如第3圖所示,形成於除去氮化鎵成長層12且矽基板10以格子狀露出的部分。也就是說,絕緣膜14是形成為格子狀。
接著,再從絕緣膜14露出的氮化鎵成長層12的表面形成電極等。藉此,形成裝置。
一般而言,藉由使用氮化鎵(GaN)、氮化鋁鎵(AlGaN)及氮化鋁(AlN)等的氮化物基的半導體材料,可以製作異質構造。因此,這些材料有時會被利用於高頻率裝置、光學裝置或功率裝置的製成。
氮化物基的半導體構造一般而言是藉由在碳化矽、藍寶石或矽基板上磊晶成長來製作。特別是矽基板,與碳化矽等相比較便宜。因此,可以減低材料成本。
在此,一般而言如果在矽基板成長氮化鎵,基板可能會翹曲。因此,在搬運或曝光步驟等的製程中可能會發生問題。
矽的晶格常數為0.5431nm。因此,在矽的(111)面上的原子間隔為0.5431/√2=0.3840nm。對此,氮化鎵的晶格常數為0.3819nm。氮化鎵的晶格常數比矽小,因此,矽基板在(111)面上會受到來自異質磊晶成長的氮化鎵的壓縮應力。
此外,矽的線膨脹係數為2.6×10−6
K−1
。對此,氮化鎵的線膨脹係數為5.6×10−6
K−1
。通常,氮化鎵是在800℃以上的高溫下成長。因此,從成長溫度降溫到室溫的時候,氮化鎵比矽更顯著地收縮。因此,矽基板會受到來自氮化鎵成長層的壓縮應力。
如上所述,如果在矽基板形成氮化鎵成長層,會產生使氮化鎵成長層變為內側的翹曲。實際上,翹曲的方向根據磊晶成長的條件或緩衝層的構成而不同。
此外,可以考慮將氮化鎵成長層分割為小區塊且分散應力,藉此減低基板翹曲的方法。但是,這種方法一般而言難以使基板的翹曲完全消失。例如在4吋基板會有殘留數μm~10μm左右的晶圓翹曲的可能性。這種翹曲在需要微細圖案的形成之閘極曝光步驟等會特別成為問題。
對此,本實施形態的絕緣膜14施加與氮化鎵成長層12施加至矽基板10的應力為相反方向的應力於矽基板10。也就是說,在氮化鎵成長層12施加壓縮應力於矽基板10的情況下,使用施加抗拉應力於矽基板10的絕緣膜14。此外,在氮化鎵成長層12施加抗拉應力於矽基板10的情況下,使用施加壓縮應力於矽基板10的絕緣膜14。
藉此,矽基板10從氮化鎵成長層12受到的應力能夠以絕緣膜14抵銷。因此,可以緩和矽基板10的翹曲。在本實施形態中,可以得到將氮化鎵成長層12分割為小區塊13以分散應力的效果、和絕緣膜14所造成的應力的抵銷效果的兩者。因此,能夠抑制晶圓的翹曲、容易地實施曝光步驟。
此外,利用絕緣膜14的厚度,可以調節施加至矽基板10的應力。絕緣膜14的厚度可以藉由蝕刻時間來調節。因此,能夠容易地使矽基板10平坦。
另外,將顯示於第2圖的熱氧化膜16形成得較厚並抑制翹曲是困難的。在此情況下,在磊晶成長之前將較厚的熱氧化膜16形成於矽基板10。此時,由於熱氧化膜16的膜應力大,在磊晶成長的開始時晶圓有變為顯著翹曲的狀態之虞。因此,磊晶成長步驟有變困難的可能性。
因此,熱氧化膜16為了抑制矽基板10顯著地翹曲,需要形成得較薄。對此,絕緣膜14為了將較大的應力施加至矽基板10,形成為比熱氧化膜16更厚。
作為本實施形態的變形例,顯示於第3圖之除去了氮化鎵成長層12的區域並非限定於格子狀。除去了氮化鎵成長層12的區域只要能夠將氮化鎵成長層12分割為複數個小區塊13,也可以是別的形狀。考慮到形成絕緣膜14且將應力施加至矽基板10,除去了氮化鎵成長層12的區域理想上為從矽基板10的一端縱向或橫向地貫穿至另一端。
此外,也可以如下所述以進行第1步驟。首先,在矽基板10的整個上表面藉由有機金屬氣相成長法或是分子束磊晶法形成氮化鎵成長層12。其後,在氮化鎵成長層12上形成光阻等的遮罩層。接著,利用遮罩層蝕刻氮化鎵成長層12直到矽基板10露出為止。藉此,矽基板10以格子狀露出,氮化鎵成長層12被分割為複數個小區塊13。接著,移除遮罩層。
這些變形可以適當地應用關於以下的實施形態的半導體晶圓及其製造方法。
實施形態2
第6圖為關於實施形態2的半導體晶圓200的剖面圖。在半導體晶圓200中,絕緣膜214的構造與半導體晶圓100不同。在絕緣膜214,在複數個小區塊13之中彼此鄰接之一對的小區塊13之間隔形成了凹部215。
接著,說明半導體晶圓200的製造方法。第1步驟與實施形態1相同。接著,實施第2步驟。第7圖為說明關於實施形態2的半導體晶圓的製造方法的剖面圖。首先,以絕緣膜214覆蓋矽基板10的上表面、和複數個小區塊13的各個側面及上表面。
絕緣膜214是沿著矽基板10和複數個小區塊13所形成。在絕緣膜214的表面形成反映了複數個小區塊13的形狀的凹凸。此時,在絕緣膜214之中彼此鄰接之一對的小區塊13之間隔的部分形成凹部215。絕緣膜214之中覆蓋小區塊13的側面的部分的厚度是被鄰接的小區塊13夾住的區域的寬度的1/2以下。
接著,塗布阻劑218。設置阻劑218於絕緣膜214上以掩埋凹部215。阻劑218的上表面是平坦的。阻劑218具有在阻劑218的上表面不會反映絕緣膜214的表面的凹凸之厚度。
接著,實施蝕刻步驟。藉此使複數個小區塊13的上表面從絕緣膜214露出。第8圖所示為使複數個小區塊13的上表面露出的狀態的剖面圖。在蝕刻步驟中,以乾蝕刻將絕緣膜214連同阻劑218一起移除,直到露出氮化鎵成長層12為止。藉此,移除阻劑218之中設置於比複數個小區塊13的上表面更上方的部分、和絕緣膜214之中設置於比複數個小區塊13的上表面更上方的部分。
此時,理想上是利用使阻劑218和絕緣膜214的蝕刻速率相等的蝕刻條件。一般對氧化矽膜及氮化矽膜而言,有可能找到蝕刻速率與阻劑相等的蝕刻條件。因此,能夠精度良好地使複數個小區塊13的上表面露出。
在蝕刻步驟之後,除去阻劑218之中掩埋凹部215的部分。如上所述以形成絕緣膜214。
如果將絕緣膜214設置為覆蓋複數個小區塊13,如第7圖所示,可能會在絕緣膜214的表面形成格子狀的凹凸。如果不塗布阻劑218,且與實施形態1相同地只蝕刻絕緣膜214直到露出氮化鎵成長層12為止的話,矽基板10上的絕緣膜214也會被蝕刻。因此,有絕緣膜214在矽基板10上幾乎不殘留的可能性。
在將覆蓋性為0的膜用於絕緣膜214之極端的例子中,使絕緣膜214的厚度在氮化鎵成長層12上與在矽基板10上相同。藉此,如果蝕刻絕緣膜214直到氮化鎵成長層12露出為止,矽基板10上的絕緣膜214也會完全被除去。
對此,在本實施形態中,即使是在絕緣膜214的表面形成凹凸的情況下,也能夠在矽基板10上殘留較厚的絕緣膜214。因此,能夠利用絕緣膜214充分地抑制矽基板10的翹曲。
實施形態3
第9圖為關於實施形態3的半導體晶圓300的剖面圖。半導體晶圓300之矽基板310的構造與半導體晶圓100不同。在矽基板310的上表面側形成複數個凸部310a。複數個小區塊13分別設置於複數個凸部310a上。
接著,說明半導體晶圓300的製造方法。首先,在矽基板310的上表面形成氮化鎵成長層12。在此狀態下,矽基板310的上表面是平坦的。此外,氮化鎵成長層12是形成於矽基板310的整個上表面。
接著,實施蝕刻步驟。在蝕刻步驟中,首先在氮化鎵成長層12上形成光阻等的遮罩層。接著,使用遮罩層以藉由蝕刻來除去氮化鎵成長層12的一部分。蝕刻為例如乾蝕刻。因此,以格子狀移除氮化鎵成長層12,露出矽基板310。藉由蝕刻製程,氮化鎵成長層12被分割為複數個小區塊。
此外,在矽基板310露出後也繼續進行蝕刻。藉此,蝕刻矽基板310,在矽基板310形成溝槽。也就是說,在矽基板310的上表面側形成複數個凸部310a。
接著,形成絕緣膜14。絕緣膜14掩埋鄰接的凸部310a的間隔。之後的步驟與實施形態1相同。
在本實施形態中,只有形成於矽基板310的溝槽的深度可以使絕緣膜14的厚度加厚。因此,可以利用絕緣膜14以施加比實施形態1更大的應力於矽基板310。此外,即使是在氮化鎵成長層12比為了抑制翹曲所需的絕緣膜14的厚度更薄的情況下,也可以確保絕緣膜14的厚度。
實施形態4
第10圖為關於實施形態4的半導體晶圓400的剖面圖。在本實施形態中,在矽基板10的上表面設置熱氧化膜16。在熱氧化膜16上設置絕緣膜14。熱氧化膜16與絕緣膜14形成絕緣層。
接著,說明半導體晶圓400的製造方法。直到成長氮化鎵成長層12的步驟為止與實施形態1相同。在本實施形態中,不除去熱氧化膜16。接著,在熱氧化膜16上形成絕緣膜14。之後的步驟與實施形態1相同。
在本實施形態中,為了不除去熱氧化膜16,可以簡略化製造步驟。此外,在熱氧化膜16施加矯正矽基板10的翹曲之應力的情況下,可以為了翹曲的抑制而有效利用熱氧化膜16。
另外,也可以適當地組合以使用由各實施形態所說明的技術特徵。
10,310:矽基板
11:區域
12:氮化鎵成長層
13:小區塊
14,214:絕緣膜
16:熱氧化膜
100,200,300,400:半導體晶圓
215:凹部
218阻劑
310a:凸部
第1圖為關於實施形態1的半導體晶圓的剖面圖。
第2圖所示為在矽基板形成了熱氧化膜的狀態的平面圖。
第3圖所示為除去了熱氧化膜的狀態的平面圖。
第4圖所示為除去了熱氧化膜的狀態的剖面圖。
第5圖所示為形成了絕緣膜的狀態的剖面圖。
第6圖為關於實施形態2的半導體晶圓的剖面圖。
第7圖為說明關於實施形態2的半導體晶圓的製造方法的剖面圖。
第8圖所示為使複數個小區塊的上表面露出的狀態的剖面圖。
第9圖為關於實施形態3的半導體晶圓的剖面圖。
第10圖為關於實施形態4的半導體晶圓的剖面圖。
10:矽基板
12:氮化鎵成長層
13:小區塊
14:絕緣膜
100:半導體晶圓
Claims (18)
- 一種半導體晶圓的製造方法,其特徵為包括: 第1步驟,在矽基板的上表面形成分割為複數個小區塊的氮化鎵成長層;以及 第2步驟,以絕緣膜掩埋前述複數個小區塊的間隔; 其中前述絕緣膜將與前述氮化鎵成長層施加至前述矽基板的應力為相反方向的應力施加至前述矽基板,且前述複數個小區塊與前述矽基板的上表面垂直的剖面為矩形。
- 如請求項1之半導體晶圓的製造方法,其中前述絕緣膜的厚度為1μm以上、前述氮化鎵成長層的厚度以下。
- 如請求項1或2之半導體晶圓的製造方法,前述第1步驟包括: 在前述矽基板的上表面形成熱氧化膜,且以前述熱氧化膜將前述矽基板的上表面分隔為複數個區域的步驟;以及 在前述複數個區域分別成長前述複數個小區塊的步驟。
- 如請求項3之半導體晶圓的製造方法,其中在前述第1步驟中,在成長前述複數個小區塊後除去前述熱氧化膜。
- 如請求項3之半導體晶圓的製造方法,其中在前述第2步驟中,在前述熱氧化膜上形成前述絕緣膜。
- 如請求項3之半導體晶圓的製造方法,其中前述絕緣膜比前述熱氧化膜更厚。
- 如請求項1或2之半導體晶圓的製造方法,前述第1步驟更包括: 在前述矽基板的上表面形成前述氮化鎵成長層的步驟;以及 藉由蝕刻除去前述氮化鎵成長層的一部分且使前述矽基板露出,並且將前述氮化鎵成長層分割為前述複數個小區塊的蝕刻步驟; 其中在前述蝕刻步驟中,在前述矽基板露出後也繼續進行蝕刻,且在前述矽基板形成溝槽。
- 如請求項1或2之半導體晶圓的製造方法,其中前述絕緣膜從前述矽基板的一端排列至另一端。
- 一種半導體晶圓,其特徵為包括: 矽基板; 氮化鎵成長層,設置於前述矽基板的上表面,且被分割為複數個小區塊;以及 絕緣層,設置於前述矽基板的上表面,且掩埋前述複數個小區塊的間隔; 其中前述絕緣層將與前述氮化鎵成長層施加於前述矽基板的應力為相反方向的應力施加於前述矽基板,且前述絕緣層包含氮化矽膜。
- 如請求項9之半導體晶圓,其中前述絕緣層的厚度為1μm以上、前述氮化鎵成長層的厚度以下。
- 如請求項9或10之半導體晶圓,其中前述絕緣層在前述複數個小區塊之中彼此鄰接之一對的小區塊的間隔形成凹部。
- 如請求項9或10之半導體晶圓,其中複數個凸部形成於前述矽基板的上表面側; 前述複數個小區塊分別設置於前述複數個凸部上。
- 如請求項9或10之半導體晶圓,其中前述絕緣層具有設置於前述矽基板的上表面的熱氧化膜、和設置於前述熱氧化膜上的絕緣膜。
- 如請求項13之半導體晶圓,其中前述絕緣膜比前述熱氧化膜更厚。
- 如請求項9或10之半導體晶圓,其中前述絕緣層從前述矽基板的一端排列至另一端。
- 一種半導體晶圓的製造方法,其特徵為包括: 第1步驟,在矽基板的上表面形成分割為複數個小區塊的氮化鎵成長層;以及 第2步驟,以絕緣膜掩埋前述複數個小區塊的間隔; 其中前述絕緣膜將與前述氮化鎵成長層施加至前述矽基板的應力為相反方向的應力施加至前述矽基板,且前述絕緣膜為氮化矽膜。
- 如請求項16之半導體晶圓的製造方法,其中前述氮化鎵成長層將壓縮應力施加至前述矽基板; 在前述第2步驟中,使用SiH4 和NH3 作為處理氣體,將SiH4 相對於NH3 的比率設定為0.5以下以藉由電漿CVD形成前述絕緣膜。
- 一種半導體晶圓的製造方法,其特徵為包括: 第1步驟,在矽基板的上表面形成分割為複數個小區塊的氮化鎵成長層;以及 第2步驟,以絕緣膜掩埋前述複數個小區塊的間隔; 其中前述絕緣膜將與前述氮化鎵成長層施加至前述矽基板的應力為相反方向的應力施加至前述矽基板; 前述第2步驟包括: 用前述絕緣膜覆蓋前述矽基板的上表面、和前述複數個小區塊的各個側面及上表面,且在前述絕緣膜之中彼此鄰接之一對的小區塊的間隔的部分形成凹部的步驟; 在前述絕緣膜上設置阻劑以掩埋前述凹部的步驟; 藉由蝕刻除去前述阻劑之中設置於比前述複數個小區塊的上表面更上方的部分、和前述絕緣膜之中設置於比前述複數個小區塊的上表面更上方的部分,且使前述複數個小區塊的上表面從前述絕緣膜露出的蝕刻步驟;以及 在前述蝕刻步驟之後,除去前述阻劑之中掩埋前述凹部的部分的步驟。
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