TW202013117A - 定電流電路 - Google Patents

定電流電路 Download PDF

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Publication number
TW202013117A
TW202013117A TW108129991A TW108129991A TW202013117A TW 202013117 A TW202013117 A TW 202013117A TW 108129991 A TW108129991 A TW 108129991A TW 108129991 A TW108129991 A TW 108129991A TW 202013117 A TW202013117 A TW 202013117A
Authority
TW
Taiwan
Prior art keywords
circuit
constant current
voltage
nmos transistor
current
Prior art date
Application number
TW108129991A
Other languages
English (en)
Chinese (zh)
Inventor
佐野稔
Original Assignee
日商艾普凌科有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商艾普凌科有限公司 filed Critical 日商艾普凌科有限公司
Publication of TW202013117A publication Critical patent/TW202013117A/zh

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/91—Indexing scheme relating to amplifiers the amplifier has a current mode topology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
TW108129991A 2018-09-21 2019-08-22 定電流電路 TW202013117A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-177359 2018-09-21
JP2018177359A JP6998850B2 (ja) 2018-09-21 2018-09-21 定電流回路

Publications (1)

Publication Number Publication Date
TW202013117A true TW202013117A (zh) 2020-04-01

Family

ID=69884497

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108129991A TW202013117A (zh) 2018-09-21 2019-08-22 定電流電路

Country Status (5)

Country Link
US (1) US10969815B2 (enExample)
JP (1) JP6998850B2 (enExample)
KR (1) KR20200034604A (enExample)
CN (1) CN110941305B (enExample)
TW (1) TW202013117A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113473671B (zh) * 2021-07-28 2022-09-23 上海晶丰明源半导体股份有限公司 用于恒流型驱动电路的控制电路及恒流型驱动电路
CN115268547B (zh) * 2022-08-09 2023-11-07 骏盈半导体(上海)有限公司 带隙基准电路

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106869A (ja) * 1993-09-30 1995-04-21 Nec Corp 定電流回路
JP4077242B2 (ja) * 2002-05-17 2008-04-16 新日本無線株式会社 定電圧定電流制御回路
JP4256338B2 (ja) * 2004-12-28 2009-04-22 東光株式会社 定電流源回路
JP2006352193A (ja) * 2005-06-13 2006-12-28 Seiko Instruments Inc 差動増幅器
TWI307002B (en) * 2005-12-15 2009-03-01 Realtek Semiconductor Corp Bandgap voltage generating circuit and relevant device using the same
US7554313B1 (en) * 2006-02-09 2009-06-30 National Semiconductor Corporation Apparatus and method for start-up circuit without a start-up resistor
JP5168910B2 (ja) * 2007-01-18 2013-03-27 株式会社リコー 定電流回路及び定電流回路を使用した発光ダイオード駆動装置
JP2008197994A (ja) * 2007-02-14 2008-08-28 Oki Electric Ind Co Ltd 起動回路
WO2009013572A1 (en) * 2007-07-24 2009-01-29 Freescale Semiconductor, Inc. Start-up circuit element for a controlled electrical supply
TW201025812A (en) * 2008-12-25 2010-07-01 Advanced Analog Technology Inc DC-DC converter providing soft-start function
JP2011118532A (ja) * 2009-12-01 2011-06-16 Seiko Instruments Inc 定電流回路
EP2450768B1 (en) * 2010-09-20 2013-11-13 Dialog Semiconductor GmbH Startup circuit for self-supplied voltage regulator
JP5762205B2 (ja) * 2011-08-04 2015-08-12 ラピスセミコンダクタ株式会社 半導体集積回路
JP2013097551A (ja) * 2011-10-31 2013-05-20 Seiko Instruments Inc 定電流回路及び基準電圧回路
CN105246207B (zh) * 2015-10-30 2018-03-20 上海晶丰明源半导体股份有限公司 芯片的启动电路、led驱动器、led驱动电路及芯片的启动方法
JP6837899B2 (ja) * 2017-04-13 2021-03-03 エイブリック株式会社 充放電制御回路およびバッテリ装置
CN107294369B (zh) * 2017-07-12 2019-03-29 电子科技大学 一种应用于升压变换器的恒流启动电路
JP6892357B2 (ja) * 2017-08-31 2021-06-23 エイブリック株式会社 スイッチングレギュレータ
JP7097749B2 (ja) * 2018-06-05 2022-07-08 エイブリック株式会社 レベルシフト回路

Also Published As

Publication number Publication date
CN110941305A (zh) 2020-03-31
KR20200034604A (ko) 2020-03-31
CN110941305B (zh) 2022-11-15
US10969815B2 (en) 2021-04-06
JP6998850B2 (ja) 2022-01-18
US20200097035A1 (en) 2020-03-26
JP2020047193A (ja) 2020-03-26

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